Abstract
Ohmic contacts play a crucial role in realizing high-performance electronic devices based on two-dimensional materials. The contact between semimetals and semiconductors can mitigate the formation of metal-induced gap states (MIGS), thereby reducing the SBH, enhancing the efficiency of high charge injection, and facilitating the establishment of ohmic contacts. This study involves a systematic exploration of the contact characteristics between the two-dimensional semimetal TiS2 and semiconductor MX2 (M = Mo, W, Cr, Zr, Hf; X = S, Se, Te) through first-principles calculations. It is found that the TiS2/MoSe2 and TiS2/WSe2 heterojunction achieve ohmic contact. Investigations into their transport properties reveal that significant currents can be observed at relatively low voltages, indicating excellent transport performance of these heterojunctions. The TiS2/CrSe2 and TiS2/HfSe2 contact heterojunctions also show low Schottky barrier height (SBH), with the barrier height being adjustable under strain. The SBH of TiS2/CrSe2 and TiS2/HfSe2 heterojunctions are very close to zero under stresses of 4 % and −4%, respectively. This also implies that our research can offer valuable guidance for the development of adjustable Schottky nano-devices and high-performance optoelectronic devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Physica E: Low-dimensional Systems and Nanostructures
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
