Abstract
It is well-known that memristive devices can be applied to brain-like parallel computing, but the interface effects have an indelible impact on memristive performance. In this work, two memristive devices with Ag/CTO/SMTO/Ti and Ag/SMTO/CTO/Ti structures were fabricated based on the heterojunctions between CaTiO3 (CTO) and Mn-doped SrTiO3 (SMTO). By comparison, the Ag/CTO/SMTO/Ti device shows relatively improved memristive characteristics with the optimum sweeping voltage of 1.2 V and the switching ratio of ∼12. That is to say, changing the heterojunction order between CTO and SMTO can regulate the memristive behaviors of the device because the interface effect caused by heterojunction contact has influence on the particle migration, resulting in different rates of conductive filaments formation, so that the memristive characteristics of the device can be regulated. Finally, the resistive switching (RS) characteristics of the device are explained by in-depth mechanism analysis based on fitting experimental data. Therefore, this work not only provides a feasible method for improving the memristive characteristics of the device, but also helps to understand the influence of the interface effect on the particles motion, thereby laying the foundation for the preparation of high-capacity and efficient memristive device in artificial intelligence (AI) applications.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
