The current study is part of an overarching goal to develop an ion implantation process for producing cyclic actuating elements used in microelectromechanical systems. The damage produced by high-energy ions can be used as a means to selectively suppress the martensitic transformation and bias the motion of shape memory alloy thin films Ni–Ti. In order to optimize the performance of these devices, detailed knowledge of the influence of ion implantation on the microstructure is needed. Recent experiments have shown that complex microstructures are formed after 5 MeV Ni ion implantation. In particular, the extensive surface amorphization and the depth distributions of the irradiation induced phase transformations, which were more prominent at shallower depths than expected, did not correlate with ion transport theories involving nuclear stopping damage distributions. Although electronic stopping effects are normally neglected in metals in these energy regimes, they may explain the unexpected surface amorphization since electronic stopping is the prevalent mode of ion energy transfer at shallow depths. Therefore, swift ion irradiation experiments were conducted to assess the effects of electronic stopping on the damage production. Microstructural observations showed that significant damage was produced from ions possessing low electronic stopping powers (<9 keV/nm) near those of 5 MeV Ni ions (3 keV/nm), confirming, in part, that electronic stopping effects contribute to the damage processes.
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