Incident Heavy Ions Research Articles

Study on the single-event burnout mechanism of GaN MMIC power amplifiers

In this Letter, a single-event burnout (SEB) mechanism in gallium nitride (GaN) microwave monolithic integrated circuit power amplifiers with a high linear energy transfer of 78.1 MeV·cm2/mg has been investigated in detail. A typical SEB phenomenon was observed. With the aid of photon emission measurements and scanning electron microscopy, it is found that catastrophic burnout occurs in the power-stage GaN high electron mobility transistors (HEMTs) and the metal–insulator–metal (MIM) capacitors, respectively. For the GaN HEMT, the incident heavy ions will generate electron–hole pairs within it, which can gain enough energy with the transverse high electric field. The high-energy electrons will collide with the lattice near the drain electrode and induce significant electron trapping, which will result in a significant longitudinal local electric field. When a critical electric field is achieved, catastrophic burnout occurs. For the MIM capacitor, the burnout is attributed to the single-event dielectric rupture via severe impact ionization or latent tracks when heavy ions strike it.

Heat transfer within nonequilibrium dense aluminum heated by a heavy ion beam

Abstract Energetic laser-accelerated ions can heat a small solid-density sample homogeneously to temperatures over 10,000 K in less than a nanosecond. During this brief heating time, the electron temperature of the sample rises first, and then the ion temperature increases owing to the heat transfer between the hot electrons and cold ions. Since energy deposition from the incident heavy ion beam continues concurrently with the electron-ion relaxation process within the heated sample, the electron and ion temperatures do not reach equilibrium until the end of the heating. Here we calculate the temperature evolutions of electrons and ions within a dense aluminum sample heated by a laser-accelerated gold ions using the two-temperature model. For these calculations, we use the published stopping power data, known electron-ion coupling factors, and the SESAME equation-of-state (EOS) table for aluminum. For the first time, we investigate the electron and ion temperature distributions within the warm dense aluminum sample and the heating uniformity throughout the entire heating period. We anticipate that knowledge of the temperature evolution during heating will allow for the study of the stopping power, thermal conductivity, EOS, and opacity of warm dense matter heated by an energetic heavy ion beam.

Heavy ion single event effect in double-trench SiC metal–oxide–semiconductor field-effect transistors

In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10<sup>4</sup> ion/cm<sup>2</sup>, and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10<sup>4</sup> ion/cm<sup>2</sup>, so when the LET value is 37.3 MeV·cm<sup>2</sup>/mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34 % of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N<sup>–</sup> drift layer and the N<sup>+</sup> substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

Secondary fragments of proton and helium ion beams in High-Density Polyethylene phantom: A Monte Carlo simulation study

In hadrontherapy, secondary fragments are generated by nuclear interactions of the incident heavy ion beam with the atomic nuclei of the target. It is important to determine the yield of production and the dose contribution of these secondary fragments in order to determine the radiobiological effectiveness more accurately. This work aims to fully identify the secondary fragments generated by nuclear interactions of proton and helium (4He) ion beams in a High-Density Polyethylene (HDPE) target and to investigate the dose contributions by secondary fragments. Incident protons with energies of 55.90 MeV and 105.20 MeV and helium ions with energies of 52.55 MeV/u and 103.50 MeV/u in the HDPE phantom have been investigated by the means of Geant4 Monte Carlo (MC) simulations. Simulated results were validated using NASA Space Radiation Laboratory (NSRL) Bragg curves experimental data. The results showed that the dose contribution of secondary fragments deriving from helium ion beams is three times higher than in the case of proton beams. This is due to a higher production of nuclear fragments in the case of helium ion beams. This work contributes to a better understanding of secondary fragments generated by protons and helium ions in the HDPE target.

The Inflection Point of Single Event Transient in SiGe HBT at a Cryogenic Temperature

Basing our findings on our previous pulsed laser testing results, we have experimentally demonstrated that there is an inflection point of a single event transient (SET) in the silicon-germanium heterojunction bipolar transistors (SiGe HBTs) with a decreasing temperature from +20 °C to −180 °C. Additionally, the changes in the parasitic resistivity of the carrier collection pathway due to incomplete ionization could play a key role. In this paper, we found that the incident-heavy ion’s parameters could also have an important impact on the SET inflection point by introducing the ion track structures generated by Geant4 simulation to the TCAD transient simulation. Heavy ion with a low linear energy transfer (LET) will not trigger the ion shunt effect of SiGe HBT and the inflection point will not occur until −200 °C. For high LET ions’ incidence, the high-density electron-hole pairs (EHPs) could significantly affect the parasitic resistivity on the pathway and lead to an earlier inflection point. The present results and methods could provide a new reference for the effective evaluation of single-event effects in bipolar transistors and circuits at cryogenic temperatures and provide new evidence of the SiGe technology’s potential for applications in extreme cryogenic environments.

Heavy ion single event effect in double-trench SiC metal-oxide-semiconductor field-effect transistors

In this paper, experiments on 208 MeV Ge ion irradiation with different source-drain bias voltages are carried out for the double-trench SiC metal–oxide–semiconductor field-effect transistors, and the physical mechanism of the single event effect is analyzed. The experimental results show that the drain leakage current of the device increases more obviously with the increase of the initial bias voltage during irradiation. When the bias voltage is 400 V during irradiation, the device has a single event burned at a fluence of 9×10<sup>4</sup> ion/cm<sup>2</sup>, and when the bias voltage is 500 V, the device has a single event burned at a fluence of 3×10<sup>4</sup> ion/cm<sup>2</sup>, so when the LET value is 37.3 MeV·cm<sup>2</sup>/mg, the SEB threshold of DUT does not exceed 400 V, which is lower than 34% of the rated operational voltage. The post gate-characteristics test results show that the leakage current of the device with a bias voltage of 100 V does not change significantly during irradiation. When the bias voltage is 200 V, the gate leakage and the drain leakage of the device both increase, so do they when the bias voltage is 300 V, which is positively related to bias voltage. In order to further analyze the single particle effect mechanism of device, the simulation is conducted by using TCAD tool. The simulation results show that at low bias voltage, the heavy ion incident device generates electron-hole pairs, the electrons are quickly swept out, and the holes accumulate at the gate oxygen corner under the effect of the electric field, which combines the source-drain bias voltage, leading to the formation of leakage current channels in the gate oxygen layer. The simulation results also show that at high bias voltage, the electrons generated by the incident heavy ion move towards the junction of the N<sup>–</sup> drift layer and the N<sup>+</sup> substrate under the effect of the electric field, which further increases the electric field strength and causes significant impact ionization. The local high current density generated by the impact ionization and the load large electric field causes the lattice temperature to exceed the melting point of silicon carbide, causing single event burnout. This work provides a reference and support for studying the radiation effect mechanism and putting silicon carbide power devices into aerospace applications.

A compact circuit-level model for single-event burnout in SiC power MOSFET devices

This paper presents a compact circuit-level model for single-event burnout (SEB) in silicon carbide (SiC) metal-oxide field-effect transistors (MOSFETs). Key parameters of the equivalent circuit model of the MOSFET are analyzed and determined in detail, including nonlinear parasitic drain-source capacitance and nonlinear parasitic gate-drain capacitance. The effect of the parasitic bipolar junction transistor is considered and an iteratively optimized double-exponential current source is used to simulate the transient power current generated by incident heavy ions. The equivalent circuit model of the MOSFET is verified by comparing the SPICE simulation curves, TCAD simulation curves, and the curves in the SiC power double trench MOSFET’s datasheet (SCT3080KL). Then, the SEB is caused by heavy ions at various incident positions, linear energy transfer values, drain-source voltage (V ds), and gate-source voltage (V gs) using the TCAD and HSPICE simulations. Simulation results on the SPICE model coincide with the TCAD simulation results. Moreover, this compact model is used to predict the SEB threshold for devices with higher breakdown voltage ratings.

The Influence of Ion Track Characteristics on Single-Event Upsets and Multiple-Cell Upsets in Nanometer SRAM

The influence of ion track characteristics on single-event upsets (SEU) and multiple-cell upsets (MCUs) is investigated in 65-nm static randon access memory (SRAM) above the heavy-ion linear energy transfer (LET) threshold. The experimental results show that for the incident heavy ions with the same or similar LET but different energies, SEU cross section of low-energy ions is higher than high-energy ions when the LET values are located below the knee point of low-energy SEU event cross section curves. With the LET values increasing above the knee point, SEU cross section of high-energy ions is higher than low-energy ions. When the effective LETs of different-energy ions within the sensitive region are the same, MCU mean, MCU ratio, and MCU event cross sections of high-energy ions are greater than those of low-energy ions due to larger track radius. During the test evaluation of heavy-ion single-event effect (SEE) in nanometer devices, it may be advisable that the SEU LET threshold be obtained with low-energy ions and the SEU saturation cross section be obtained with high-energy ions.

Determination of Deposition Order of Toners, Inkjet Inks, and Blue Ballpoint Pen Combining MeV-Secondary Ion Mass Spectrometry and Particle Induced X-ray Emission.

Determination of the deposition order of different writing tools is very important for the forensic investigation of questioned documents. Here we present a novel application of two ion beam analysis (IBA) techniques: secondary ion mass spectrometry using MeV ions (MeV-SIMS) and particle induced X-ray emission (PIXE) to determine the deposition order of intersecting lines made of ballpoint pen ink, inkjet printer ink, and laser printer toners. MeV-SIMS is an emerging mass spectrometry technique where incident heavy MeV ions are used to desorb secondary molecular ions from the uppermost layers of an organic sample. In contrast, PIXE provides information about sample elemental composition through characteristic X-ray spectra coming from greater depth. In the case of PIXE, the information depth depends on incident ion energy, sample matrix and self-absorption of X-rays on the way out from the sample to the X-ray detector. The measurements were carried out using a heavy ion microprobe at the Ruđer Bošković Institute. Principal component analysis (PCA) was employed for image processing of the data. We will demonstrate that MeV-SIMS alone was successful to determine the deposition order of all intersections not involving inkjet printer ink. The fact that PIXE yields information from deeper layers was crucial to resolve cases where inkjet printer ink was included due to its adherence and penetration properties. This is the first time the different information depths of PIXE and MeV-SIMS have been exploited for a practical application. The use of both techniques, MeV-SIMS and PIXE, allowed the correct determination of deposition order for four out of six pairs of samples.

Tungsten surface enrichment in EUROFER and Fe-W model systems studied by high-resolution time-of-flight rutherford backscattering spectroscopy

Time-of-flight Rutherford backscattering spectroscopy (ToF-RBS) with incident heavy ions offers a substantially improved depth resolution compared to conventional RBS with incident He ions. The new Garching ToF-RBS detector is located at a scattering angle of 150° with a free flight path of 1.313 m and a time resolution of 600 ps. The experimentally achieved depth resolution at the surface of W-containing Fe samples is 2–3 nm using incident Si ions. Model systems consisting of Fe layers with 0.7, 1.5 and 4.2 at% W and EUROFER steel (containing 0.34 at% W + Ta) were eroded by 200 eV D ions to a fluence of 1023 D/m2 at 310 K and 900 K. W depth profiles were measured using ToF-RBS, light impurities at the surface were detected using time-of-flight elastic recoil detection analysis (ToF-ERDA). The data sets from the two techniques were analyzed self-consistently. In all cases W enrichment at the surface was observed. The enrichment at 310 K is in good agreement with SDTrimSP simulations if the experimentally achieved depth resolution is taken into account. Annealing of the model systems with 0.7 and 1.5 at% W to 900 K for 10 h in vacuum resulted also in a W-enriched surface layer.

A Quantitative Analysis of DICE SRAM SEU Caused by Heavy Ion Elastic Scattering

A 4 Mbit DICE latch SRAM exhibits single event upset(SEU) cross-section of $10^{14}$ – $10^{12}~\mathrm {cm}^{2}/\mathrm {bit}$ in vertically incident heavy-ion beam tests. TCAD simulations show that the DICE latch works, and that the SEU is not caused by charge sharing. Numerical simulations on particle elastic collision gives quantitative evidence that it is caused by elastic scattering between the incident ion and target nucleus. Three scenarios of elastic scattering SEU are calculated separately in order to get a deeper understanding. The upset cross-section’s dependencies on ion energy, incident angle and the distance between DICE nodes are analyzed. A designing suggestion that paired nodes of DICE latch should be at least $6~\mu \mathrm {m}$ away is firstly presented.

3D design and electric simulation of a silicon drift detector using a spiral biasing adapter

The detector system of combining a spiral biasing adapter (SBA) with a silicon drift detector (SBA-SDD) is largely different from the traditional silicon drift detector (SDD), including the spiral SDD. It has a spiral biasing adapter of the same design as a traditional spiral SDD and an SDD with concentric rings having the same radius. Compared with the traditional spiral SDD, the SBA-SDD separates the spiral's functions of biasing adapter and the p–n junction definition. In this paper, the SBA-SDD is simulated using a Sentaurus TCAD tool, which is a full 3D device simulation tool. The simulated electric characteristics include electric potential, electric field, electron concentration, and single event effect. Because of the special design of the SBA-SDD, the SBA can generate an optimum drift electric field in the SDD, comparable with the conventional spiral SDD, while the SDD can be designed with concentric rings to reduce surface area. Also the current and heat generated in the SBA are separated from the SDD. To study the single event response, we simulated the induced current caused by incident heavy ions (20 and 50μm penetration length) with different linear energy transfer (LET). The SBA-SDD can be used just like a conventional SDD, such as X-ray detector for energy spectroscopy and imaging, etc.

Energy and angular dependence of single event upsets in ESA SEU Monitor

The new generation ESA SEU Monitor is first applied to beam verification of Beijing HI-13 Tandem accelerator according to the popularization need of Europe Space Agency and at the desire of contrast of domestic acceleraor with international accelerator. Heavy ion single event cross section of ESA SEU Monitor obtained at HI-13 is compared with those from European facilities. Beam homogeneity is also analyzed based on the SEU physical bitmap. The accuracy of heavy ion beam monitoring technique at HI-13 accelerator is verified. Through combining the heavy ion testing result with the data from the other test sites, it can be observed that the differences between SEU cross sections with different heavy ion energies of the same LET value can reach 1-3 orders of magnitude in the sub-threshold zone of single event upset cross section curve below the direct ionization LET threshold. The geometrical structure, critical charge and collection efficiency of sensitive volume are constructed on the basis of testing data and process information. The physical mechanism of energy effect on single event upsets in ESA SEU Monitor is revealed through using the Monte-Carlo calculation. Nuclear reactions between incident heavy ions and material atoms can account for single event upsets below the direct ionization LET threshold. The differences in nuclear reaction type and cross section between the diferent energy heavy ions and material atoms are the root cause of the difference among heavy ion SEU cross sections with different energies at the same LET value. On the other hand, SEU bitmap nonuniformity among different blocks in memory array and different orientation dices in ESA SEU Monitor is first reported when the heavy ion is incident at a tilting angle at the low LET value. The analysis of device layout and calculation verification can account for this phenomenon. The material of interlayer dielectric with the tilting ion passing through is different when heavy ion reaches the sensitive volume of memory blocks with different data. This leads to the difference between efficient LET values inside the sensitive volume for different data blocks. Eventually the sensitivity difference in single event upset among blocks with different data occures. The applications of ESA SEU Monitor in beam calibrating, tuning of domestic accelerator and single event effect test can be broadened further. Prediction method of space single event upset rate including heavy ion energy dependence and special angular dependence based on full-physical simulation should be developed in the future.

Effect of heavy ion irradiation on optical property of radiation-crosslinked hydroxypropyl cellulose gel containing methacrylate monomers

Effects of dose rate and liner energy transfer (LET) on the optical property of a polymer gel dosimeter irradiated with swift heavy ions were investigated. The polymer gel dosimeters that consist of 2-hydroxyethyl methacrylate, polyethylene glycol dimethacrylate, and tetrakis(hydroxymethyl)phosphonium chloride with radiation-crosslinked hydroxypropyl cellulose gel matrix were prepared. The dosimeters were irradiated with 150MeV/u He ions, 290MeV/u C ions, and 500MeV/u Fe ions at HIMAC, and then were optically analyzed by using a UV–Vis spectrophotometer. Absorbance of the irradiated dosimeters increased with an increase in the dose up to 10Gy. The absorbance at the dose of 5Gy decreased with increasing dose rate in all of the heavy ions. The dosimeter irradiated with Fe ions exhibited the lowest dose response of the absorbance. It was found that the sensitivity of the dosimeters decreased with increasing dose rate as well as LET of the incident heavy ions.

On the influence of etch pits in the overall dissolution rate of apatite basal sections

Determination of efficiencies for particle detection plays a central role for proper estimation of reaction rates. If chemical etching is employed in the revelation of latent particle tracks in solid-state detectors, dissolution rates and etchable lengths are important factors governing the revelation and observation. In this work, the mask method, where a reference part of the sample is protected during dissolution, was employed to measure step heights in basal sections of apatite etched with a nitric acid, HNO\(_3\), solution at a concentration of 1.1 M and a temperature of 20 °C. We show a drastic increase in the etching velocity as the number of etch pits in the surface augments, in accordance with the dissolution stepwave model, where the outcrop of each etch pit generates a continuous sequence of stepwaves. The number of etch pits was varied by irradiation with neutrons and perpendicularly incident heavy ions. The size dependence of the etch-pit opening with etching duration for ion (200–300 MeV 152Sm and 238U) tracks was also investigated. There is no distinction for the etch pits between the different ions, and the dissolution seems to be governed by the opening velocity when a high number of etch pits are present in the surface. Measurements of the etchable lengths of these ion tracks show an increase in these lengths when samples are not pre-annealed before irradiation. We discuss the implications of these findings for fission-track modelling.

Stripping accumulation and optimization of HIMM synchrotron

The design of an injection system for a dedicated carbon-ion therapy synchrotron is presented. Improvements to the particle tracking code ACCSIM are developed to support interactions between heavy ions and stripping foil. The three main improvements are concerned with (a) charge exchange between carbon ions and stripping foil; (b) multiple Coulomb scattering of incident heavy ions on stripping foil; and (c) energy loss in particles passing through the foil, and energy-loss straggling. The accumulation process is then simulated, and the parameters related to the injection system are optimized. A gain of about 140 in the number of particles is achieved, and the emittance and momentum spread growth is obtained, together with a central momentum shift. Finally, the superacceptance of the synchrotron, ε−Δp/p, is tracked. According to the simulation, 1.35×109 actual particles are stored successfully in the synchrotron.

Scaling effects of single-event gate rupture in thin oxides

The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The value of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (12 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm).

The nucleation parameter for heavy-ion induced bubble nucleation in superheated emulsion detector

The values of the nucleation parameter, k, for bubble nucleation induced by high energy heavy ions 12C (180 MeV/u), 20Ne (400 MeV/u) and 28Si (350 MeV/u) in superheated emulsion detector are determined by comparing the experimentally obtained normalized count rates with those obtained from simulations done using the GEANT3.21 simulation code.The results show that the nucleation parameter depends on the mass number of the incident heavy ions, and decreases with increasing mass number.

Comparison between simulated and experimental Au-ion profiles implanted in nanocrystalline ceria

Radiation response of nanocrystalline ceria films deposited on a silicon substrate was investigated under a 3-MeV Au-ion irradiation at 300K. A uniform grain growth cross the ceria films is observed and effective densification of the ceria thin films occurs during irradiation. The Au ion profiling was measured by secondary ion mass spectrometry (SIMS) and compared to the Au ion distribution predicted by the Stopping and Range of Ions in Solids (SRIM) code. It is observed that the Au-ion penetration depth is underestimated in comparison with the SIMS measurements. An overestimation of the electronic stopping power for heavy incident ions in the SRIM program may account for the discrepancies between the calculations and the SIMS experimental results. This work presents an approach to compensate the overestimation of the electronic stopping powers in the SRIM program by adjusting the nanocrystalline ceria target density to better predict the ion implantation profile.

MeV Au ion irradiation in silicon and nanocrystalline zirconia film deposited on silicon substrate

Nanocrystalline zirconia (ZrO2) film with thickness of 305nm deposited on a silicon substrate was irradiated with 2MeV Au ions to different fluences at different temperatures. The implanted ion profiles were measured by time-of-flight secondary ion mass spectrometry (ToF-SIMS) and simulated using the stopping and range of ions in matter (SRIM) code, respectively. The experimental results show that a large fraction of the incident Au ions penetrates through the ZrO2 film and are deposited into the Si substrate. At the interface of ZrO2 and Si, a sudden decrease of Au concentration is observed due to the much larger scattering cross section of Au in ZrO2 than in Si. The depth profile of the Au ions is measured in both the ZrO2 films and the Si substrates, and the results show that the Au distribution profiles do not exhibit a dependence on irradiation temperature. The local Au concentration increases proportionally with the irradiation fluence, suggesting that no thermal or irradiation-induced redistribution of the implanted Au ions. However, the Au concentration in the ZrO2 films, as determined by SIMS, is considerably lower than that predicted by the SRIM results, and the penetration depth from the SIMS measurements is much deeper than that from the SRIM predictions. These observations can be explained by an overestimation of the electronic stopping power, used in the SRIM program, for heavy incident ions in light targets. Overestimation of the heavy-ion electronic stopping power may lead to errors in local dose calculation and underestimation of the projected range of slow heavy ions in targets that contain light elements. A quick estimate based on a reduced target density may be used to compensate the overestimation of the electronic stopping power in the SRIM program to provide better ion profile prediction.