3D design and electric simulation of a silicon drift detector using a spiral biasing adapter

Abstract

The detector system of combining a spiral biasing adapter (SBA) with a silicon drift detector (SBA-SDD) is largely different from the traditional silicon drift detector (SDD), including the spiral SDD. It has a spiral biasing adapter of the same design as a traditional spiral SDD and an SDD with concentric rings having the same radius. Compared with the traditional spiral SDD, the SBA-SDD separates the spiral's functions of biasing adapter and the p–n junction definition. In this paper, the SBA-SDD is simulated using a Sentaurus TCAD tool, which is a full 3D device simulation tool. The simulated electric characteristics include electric potential, electric field, electron concentration, and single event effect. Because of the special design of the SBA-SDD, the SBA can generate an optimum drift electric field in the SDD, comparable with the conventional spiral SDD, while the SDD can be designed with concentric rings to reduce surface area. Also the current and heat generated in the SBA are separated from the SDD. To study the single event response, we simulated the induced current caused by incident heavy ions (20 and 50μm penetration length) with different linear energy transfer (LET). The SBA-SDD can be used just like a conventional SDD, such as X-ray detector for energy spectroscopy and imaging, etc.