Single event effects of SiC diode demonstrated by pulsed-laser two photon absorption

Abstract

By an effective energy model in the device under laser single event effects (SEE) test, a two-photon absorption (TPA) of pulsed laser energy transmission mechanism model vs heavy ion linear energy transfer (LET) for SEE have been established. Based on 4H Silicon Carbide (4H-SiC) diodes material parameters which should be considered for SEE) irradiated by TPA of pulsed laser, model for TPA of pulsed laser front-side SEE testing is built. Testing results show that model can give effective SEE laser energies. Meanwhile, relationship between effective laser energy and equivalent LET (ELET) has been validated. Single event transient (SET), permanent damage, and single event burnt-out (SEB) of 4H-SiC diode can be triggered by TPA of pulsed laser, and equivalent LET of pulsed laser energy is consistent with heavy ion LET.