Junction Heating Research Articles

Thermodynamic simulation of the heat distribution inside the specimen in turning of aluminum alloys

Machining processes are characterized by thermal loads generated during the shearing and friction work of the cutting process. For the in-process temperature measurement by a tool-workpiece thermocouple a consideration of the change in temperature of the cold junction at the specimen rear side is vital for the accuracy of the measurement. Thus, a macroscale thermodynamic simulation model implemented in COMSOL Multiphysics is used to model the heat distribution within the specimen during turning of the aluminum alloy EN AW-2017. The thermal input conditions are derived from experimental tests. For the assumption of the relative measurement error the simulated cold junction temperature is compared to the in-process temperature measured by a tool-workpiece thermocouple.The model shows that the machining time is the most important factor for heating of the cold junction. On the one hand, for low cutting speeds the measurement error in relation to the measured temperature is significantly high which discloses the need for a temperature compensation in this parameter range. On the other hand, for high cutting speeds and thus short machining times, the cold junction is not subjected to a significant increase in temperature. Consequently, the model validates the applicability of the temperature measurement based on a tool-workpiece thermocouple for dry machining of aluminum alloys with high cutting speeds.

The influence of interlaminar microstructure on the induction heating patterns of CFRP laminates

The impact of interlaminar microstructure on the induction heating patterns of CFRP laminates is investigated using thermography technique. Different consolidation methods were used to obtain the varying interlaminar distances. When excited by a circular induction coil, the induction heating pattern of laminates shifted from a circular to a rectangular shape as the interlaminar distance increased. The shift in the heating patterns is caused by the increase in fiber separations at the interface, which leads to fewer electrical contacts. The effect of varying interlaminar distance was modeled as an effective through-thickness electrical conductivity in the numerical model. When the separation between the fibers increased from 8 ± 3.6 µm to 15.3 ± 3.8 µm, the ratio of junction heating to fiber heating increased from 60% to 135%.

Miniaturization of Josephson Junctions for Digital Superconducting Circuits

In this work, we briefly overview various options for Josephson junctions, which should be scalable down to nanometer range for utilization in nanoscale digital superconducting technology. Such junctions should possess high values of critical current, ${I}_{c}$, and normal state resistance, ${R}_{N}$. Another requirement is the high reproducibility of the junction parameters across a wafer in a fabrication process. We argue that superconductor-normal metal-superconductor ($SN$-$N$-$NS$) Josephson junction of ``variable thickness bridge'' geometry is a promising choice to meet these requirements. Theoretical analysis of the $SN$-$N$-$NS$ junction is performed in the case where the distance between the $S$ electrodes is comparable to the coherence length of the $N$ material. The restriction on the junction geometrical parameters providing the existence of superconductivity in the $S$ electrodes is derived for the current flowing through the junction of an order of ${I}_{c}$. The junction heating, as well as available mechanisms for the heat removal, is analyzed. The obtained results show that a $SN$-$N$-$NS$ junction with a high (submillivolt) value of ${I}_{c}{R}_{N}$ product can be fabricated from a broadly utilized combination of materials like Nb/Cu using well-established technological processes. The junction area can be scaled down to that of semiconductor transistors fabricated in the frame of a 40-nm process.

Voltage spectral structure of the thermocouple with temperature dependent wires

The article presents a study of the origin of extra harmonics in the frequency spectrum of thermocouple output signal when being heated by sinusoidal waveform current. It is natural to have the first harmonic, which arises according to Ohm’s law, as a product of current and the total resistance of thermocouple and junction conductors, as well as the Peltier, Thomson effects, and the presence of the second harmonic, which is caused by a heating of junction and thermocouple conductors. The fact that third and higher harmonics arise when the resistance of conductors and junction is thermally dependent was identified. The analytical dependence of the resulting voltage across the thermocouple terminals as a function of the total resistance of conductors and junction, and the voltages due to the effects of Joule, Seebeck, Peltier and Thomson, is established. Based on the analysis of the obtained function and experimentally obtained voltage spectra across the terminal of the thermocouple, an assumption was made about the nature of the voltage spectrum that heats thermally dependent wires of the thermocouple. Recommendations are given to reduce the influence of the first, third and higher harmonics, which are uninformative, and to separate the voltage of the second informative harmonic, which is used to get frequency response of the thermocouple. Keywords: frequency response; thermocouple; EMF; spectrum; thermally dependent resistance; voltage

Confined DART-MS for Rapid Chemical Analysis of Electronic Cigarette Aerosols and Spiked Drugs.

A confined direct analysis in a real time mass spectrometry (DART-MS) system and method were developed for coupling directly with commercial electronic cigarettes for rapid analysis without sample preparation. The system consisted of a confining heated glass T-junction, DART ionization source, and Vapur interface to assist aerodynamic transport. Suction generated by positioning the electronic cigarette at the junction inlet allowed for direct chemical analysis of aerosolized electronic liquids from both automatic devices powered by drag and manual button-operated devices, which is unachievable with traditional DART-MS. Parametric analyses for the system investigated Vapur suction flow rate, junction heating, puff duration, and coil power levels. Using this method, rapid chemical analyses of electronic cigarette aerosols from electronic liquids, spiked illicit drugs, and polymeric or plasticizer contaminants were performed in <30 s. The confined DART-MS method provides a streamlined tool for rapid screening of illicit and hazardous chemical profiles emitting from electronic cigarettes.

Thermal Effects in Spin-Torque Switching of Perpendicular Magnetic Tunnel Junctions at Cryogenic Temperatures

Temperature plays an important role in spin-torque switching of magnetic tunnel junctions, causing magnetization fluctuations that decrease the switching voltage but also introduce switching errors. Here we present a systematic study of the temperature dependence of the spin-torque-switching probability of state-of-the-art perpendicular-magnetic-tunnel-junction nanopillars (40--60 nm in diameter) from room temperature down to 4 K, sampling up to a million switching events. The junction temperature at the switching voltage---obtained from the thermally assisted spin-torque-switching model---saturates at temperatures below about 75 K, showing that junction heating is significant below this temperature and that spin-torque switching remains highly stochastic down to 4 K. A model of heat flow in a nanopillar junction shows this effect is associated with the reduced thermal conductivity and heat capacity of the metals in the junction.

Efficient heating of single-molecule junctions for thermoelectric studies at cryogenic temperatures

The energy dependent thermoelectric response of a single molecule contains valuable information about its transmission function and its excited states. However, measuring it requires devices that can efficiently heat up one side of the molecule while being able to tune its electrochemical potential over a wide energy range. Furthermore, to increase junction stability, devices need to operate at cryogenic temperatures. In this work, we report on a device architecture to study the thermoelectric properties and the conductance of single molecules simultaneously over a wide energy range. We employ a sample heater in direct contact with the metallic electrodes contacting the single molecule which allows us to apply temperature biases up to ΔT = 60 K with minimal heating of the molecular junction. This makes these devices compatible with base temperatures Tbath &amp;lt; 2 K and enables studies in the linear (ΔT≪Tmolecule) and nonlinear (ΔT≫Tmolecule) thermoelectric transport regimes.

Failure Mechanism of Die-Attach Solder Joints in IGBT Modules Under Pulse High-Current Power Cycling

Applications under extreme conditions, such as solid circuit breakers and electromagnetic launching systems, are great challenges to semiconductor power devices. The die-attach solder joint is as one of the most vulnerable structures and critical to the reliability of insulated-gate bipolar transistor (IGBT) modules. In this paper, IGBT modules were cross sectioned and tested under pulse high-current power cycling. The failure mechanism of the die-attach solder in IGBTs at pulse high-current modes was investigated. Evolution of microdefects in the die-attach solder during power cycling was characterized and factors for the failure of die-attach solder joints was discussed. The results revealed that voids, cracks, and detachment of interface were the major microdefects in the die-attach solder layer. A detachment of the Si/Sn–Ag–Cu (SAC) interface is verified as the major failure mode under pulse high-current power cycling. Interface cracks between the Si-chip and die-attach solder layer were found to initiate first at the solder layer edges and then extended to the center of the solder layer with the increase of power cycles. The detachment of Si/SAC interface was more similar to the brittle fracture. The junction temperature swing and heating rate were the key factors for detachment of the Si/SAC interface.

Microwave amplification in a magnetic tunnel junction induced by heat-to-spin conversion at the nanoscale.

Heat-driven engines are hard to realize in nanoscale machines because of efficient heat dissipation1. However, in the realm of spintronics, heat has been employed successfully-for example, heat current has been converted into a spin current in a NiFe|Pt bilayer system2, and Joule heating has enabled selective writing in magnetic memory arrays3. Here, we use Joule heating in nanoscale magnetic tunnel junctions to create a giant spin torque due to a magnetic anisotropy change. Efficient conversion from heat dynamics to spin dynamics is obtained because of a large interfacial thermal resistance at an FeB|MgO interface. The heat-driven spin torque is equivalent to a voltage-controlled magnetic anisotropy4,5 of approximately 300 fJ V-1 m-1, which is more than twice the value reported in a (Co)FeB|MgO system6,7. We demonstrate an electric microwave amplification gain of 20% in a d.c. biased magnetic tunnel junction as a result of this spin torque. While electric d.c. power amplification in spintronic devices has been realized previously8, the microwave amplification was limited to relatively small amplification gains (G = radiofrequency output voltage/radiofrequency input voltage) and has never exceeded 1 (refs 9-13). A magnetic tunnel junction driven by radiofrequency spin transfer torque using ferromagnetic resonance enabled a relatively large gain of G ≈ 0.55 (ref. 12). Furthermore, radiofrequency spin waves were tuned by the spin transfer effect14,15. The heat-driven giant spin torque in the FeB|MgO16,17 magnetic tunnel junction, which shows a large magnetization precession and resistance oscillation under a d.c. bias, overcomes the above limitations and provides a gain larger than 1.

A comprehensive study of metal-coated short carbon fibers, graphite particles, and hybrid fillers for induction heating

Induction heating or welding can be performed by considering the combined effect of ferromagnetic heating due to magnetic hysteresis losses and eddy current heating due to conductive material. Nonconducting thermoplastic composite parts can be joined or welded by induction heating using a susceptor sheet filled with nickel-coated carbon fibers (NiCCFs) and nickel-coated graphite particles (NiCGPs) or both with polypropylene (PP) thermoplastic matrix. Above the percolation threshold, NiCCFs can serve as conductive materials and nickel coating will provide the ferromagnetic heating. NiCCF/PP and NiCCF/NiCGP/PP susceptor sheets were developed via melt mixing using a twin-screw extruder and sheets were produced by Calendering process. Induction heating tests were performed on a circular pancake coil and at frequencies below 1 MHz. In induction heating, fiber heating by Joule loss, junction heating (i.e. dielectric heating and contact resistance heating), as well as magnetic hysteresis effect were observed in both the cases. Heating in hybrid filler was higher at lower filler concentrations; however, with higher concentrations, heating reduced. Reduction in induction heating maybe due to a reduction in electrical conductivity was observed. Electrical conductivity was measured in fibers direction by a Keithley electrometer using a four-point measuring method and temperature was measured by an infrared thermal camera. Microstructure characterization was performed by X-ray computed microtomography and light microscopy.

Origin of Vibrational Instabilities in Molecular Wires with Separated Electronic States.

Current-induced heating in molecular junctions stems from the interaction between tunneling electrons and localized molecular vibrations. If the electronic excitation of a given vibrational mode exceeds heat dissipation, a situation known as vibrational instability is established, which can seriously compromise the integrity of the junction. Using out of equilibrium first-principles calculations, we demonstrate that vibrational instabilities can take place in the general case of molecular wires with separated unoccupied electronic states. From the ab initio results, we derive a model to characterize unstable vibrational modes and construct a diagram that maps mode stability. These results generalize previous theoretical work and predict vibrational instabilities in a new regime.

Design of Terahertz SIS Mixers Using Nb/AlN/Nb Junctions Integrated With All-NbTiN Tuning Circuits

We have designed superconductor–insulator–superconductor (SIS) mixers using Nb/AlN/Nb tunnel junctions integrated with NbTiN/SiO2/NbTiN microstrip tuning circuits for the Atacama Large Millimeter/submillimeter Array (ALMA) Band 10 (0.78–0.95 THz). In order to design the tuning circuits, we used terahertz time domain spectroscopy to experimentally derive the complex conductivity of relatively thick NbTiN films deposited on quartz substrate directly as a ground plane and on RF-sputtered SiO2 as a microstrip. Results showed that the conductivities of both films can be described by a modified Mattis–Bardeen theory. We also investigated the junction heating effects originating from quasi-particle trapping in the Nb electrodes embedded in NbTiN circuits by varying the volume of the electrodes. It was confirmed that current–voltage curves of Nb/AlN/Nb tunnel junctions with thick (∼200 nm) counter electrodes contacting NbTiN wirings showed higher gap voltages as well as reduced back-bending than those with thin (∼50 nm) electrodes. Making use of these findings, our designed SIS mixers employing Nb/AlN/Nb junctions with a current density of 15 kA/cm2 and all-NbTiN tuning circuits may cover the Band 10 with good sensitivity.

Nanoantenna arrays for infrared detection with single-metal nanothermocouples

Antenna-coupled nanothermocouples (ACNTC) for infrared detection have been widely studied. It has been shown that dipole antennas receive incident infrared radiation, and radiation-induced antenna currents heat the hot junction of the nanothermocouple, thus producing an electrical potential by the Seebeck effect. We have already demonstrated small thermopiles constructed from the series connection of ACNTCs. Here we study the infrared response of large-scale (N>500) nanoantenna arrays constructed from ACNTCs, where the antennas are spaced over a range of 25–300% of the incident wavelength. COMSOL simulations show temperature oscillations, and both simulations and experiments show corresponding open-circuit voltage oscillations as a function of antenna spacing. When the distance between the antennas is less than 2λ, constructive and deconstructive interference leads to an enhancement or attenuation of the antenna currents. Our simulations and experimental results are in excellent agreement, and show that the open-circuit voltage response of the array depends on the inter-column distance of the array and the separation between the hot and cold junctions. Furthermore, we report polarization- and array-size-dependent measurements to confirm that the responses of the arrays are the result of the heating of the hot junction by the radiation-induced antenna currents.

Analysis of self-heating of thermally assisted spin-transfer torque magnetic random access memory.

Thermal assistance has been shown to significantly reduce the required operation power for spin torque transfer magnetic random access memory (STT-MRAM). Proposed heating methods include modified material stack compositions that result in increased self-heating or external heat sources. In this work we analyze the self-heating process of a standard perpendicular magnetic anisotropy STT-MRAM device through numerical simulations in order to understand the relative contributions of Joule, thermoelectric Peltier and Thomson, and tunneling junction heating. A 2D rotationally symmetric numerical model is used to solve the coupled electro-thermal equations including thermoelectric effects and heat absorbed or released at the tunneling junction. We compare self-heating for different common passivation materials, positive and negative electrical current polarity, and different device thermal anchoring and boundaries resistance configurations. The variations considered are found to result in significant differences in maximum temperatures reached. Average increases of 3 K, 10 K, and 100 K for different passivation materials, positive and negative polarity, and different thermal anchoring configurations, respectively, are observed. The highest temperatures, up to 424 K, are obtained for silicon dioxide as the passivation material, positive polarity, and low thermal anchoring with thermal boundary resistance configurations. Interestingly it is also found that due to the tunneling heat, Peltier effect, device geometry, and numerous interfacial layers around the magnetic tunnel junction (MTJ), most of the heat is dissipated on the lower potential side of the magnetic junction. This asymmetry in heating, which has also been observed experimentally, is important as thermally assisted switching requires heating of the free layer specifically and this will be significantly different for the two polarity operations, set and reset.

Steady State and Dynamics of Joule Heating in Magnetic Tunnel Junctions Observed via the Temperature Dependence of RKKY Coupling

Understanding quantitatively the heating dynamics in magnetic tunnel junctions (MTJ) submitted to current pulses is very important in the context of spin-transfer-torque magnetic random access memory development. Here we provide a method to probe the heating of MTJ using the RKKY coupling of a synthetic ferrimagnetic storage layer as a thermal sensor. The temperature increase versus applied bias voltage is measured thanks to the decrease of the spin-flop field with temperature. This method allows distinguishing spin transfer torque (STT) effects from the influence of temperature on the switching field. The heating dynamics is then studied in real-time by probing the conductance variation due to spin-flop rotation during heating. This approach provides a new method for measuring fast heating in spintronic devices, particularly magnetic random access memory (MRAM) using thermally assisted or spin transfer torque writing.

Spin-wave thermal population as temperature probe in magnetic tunnel junctions

We study whether a direct measurement of the absolute temperature of a Magnetic Tunnel Junction (MTJ) can be performed using the high frequency electrical noise that it delivers under a finite voltage bias. Our method includes quasi-static hysteresis loop measurements of the MTJ, together with the field-dependence of its spin wave noise spectra. We rely on an analytical modeling of the spectra by assuming independent fluctuations of the different sub-systems of the tunnel junction that are described as macrospin fluctuators. We illustrate our method on perpendicularly magnetized MgO-based MTJs patterned in 50 × 100 nm2 nanopillars. We apply hard axis (in-plane) fields to let the magnetic thermal fluctuations yield finite conductance fluctuations of the MTJ. Instead of the free layer fluctuations that are observed to be affected by both spin-torque and temperature, we use the magnetization fluctuations of the sole reference layers. Their much stronger anisotropy and their much heavier damping render them essentially immune to spin-torque. We illustrate our method by determining current-induced heating of the perpendicularly magnetized tunnel junction at voltages similar to those used in spin-torque memory applications. The absolute temperature can be deduced with a precision of ±60 K, and we can exclude any substantial heating at the spin-torque switching voltage.

High-Gap Nb-AlN-NbN SIS Junctions for Frequency Band 790–950 GHz

We have designed, fabricated, and tested superconductor-insulator-superconductor (SIS) mixers based on Nb/AlN/NbN twin tunnel junctions for waveguide receivers operating in a frequency range of 790-950 GHz. Electromagnetic simulations and measurement results of the mixer performance are presented. The junctions have a high gap voltage of 3.15 mV and a high current density of about 30 kA/cm 2 , providing a wide receiver band, which was confirmed by Fourier transform spectrometer (FTS) and noise temperature measurements. The corrected receiver noise temperature varies from 240 K at low frequencies to 550 K at the high end of the band. The influence of the SIS junction heating on its characteristics has been studied and compared to another similar high current density technologies. The heating does not have a critical impact on the mixer performance.

Heat dissipation and its relation to thermopower in single-molecule junctions

Motivated by recent experiments, we present here a detailed theoretical analysis of the joule heating in current-carrying single-molecule junctions. By combining the Landauer approach for quantum transport with ab initio calculations, we show how the heating in the electrodes of a molecular junction is determined by its electronic structure. In particular, we show that in general heat is not equally dissipated in both electrodes of the junction and it depends on the bias polarity (or equivalently on the current direction). These heating asymmetries are intimately related to the thermopower of the junction as both these quantities are governed by very similar principles. We illustrate these ideas by analyzing single-molecule junctions based on benzene derivatives with different anchoring groups. The close relation between heat dissipation and thermopower provides general strategies for exploring fundamental phenomena such as the Peltier effect or the impact of quantum interference effects on the joule heating of molecular transport junctions.

Charge-carrier-induced frequency renormalization, damping, and heating of vibrational modes in nanoscale junctions

In nanoscale junctions the interaction between charge carriers and the local vibrations results in renormalization, damping and heating of the vibrational modes. We here formulate a nonequilibrium Green's functions based theory to describe such effects. Studying a generic junction model with an off-resonant electronic level, we find a strong bias dependence of the frequency renormalization and vibrational damping accompanied by pronounced nonlinear vibrational heating in junctions with intermediate values of the coupling to the leads. Combining our theory with ab-initio calculations we furthermore show that the bias dependence of the Raman shifts and linewidths observed experimentally in an OPV3 junction [D. Ward et al., Nature Nano. 6, 33 (2011)] may be explained by a combination of dynamic carrier screening and molecular charging.

Detection of orbital fluctuations above the structural transition temperature in the iron pnictides and chalcogenides

We use point contact spectroscopy to probe $\rm{AEFe_2As_2}$ ($\rm{AE=Ca, Sr, Ba}$) and $\rm{Fe_{1+y}Te}$. For $\rm{AE=Sr, Ba}$ we detect orbital fluctuations above $T_S$ while for AE=Ca these fluctuations start below $T_S$. Co doping preserves the orbital fluctuations while K doping suppresses it. The fluctuations are only seen at those dopings and temperatures where an in-plane resistive anisotropy is known to exist. We predict an in-plane resistive anisotropy of $\rm{Fe_{1+y}Te}$ above $T_S$. Our data are examined in light of the recent work by W.-C. Lee and P. Phillips (arXiv:1110.5917v2). We also study how joule heating in the PCS junctions impacts the spectra. Spectroscopic information is only obtained from those PCS junctions that are free of heating effects while those PCS junctions that are in the thermal regime display bulk resistivity phenomenon.