Abstract
In nanoscale junctions the interaction between charge carriers and the local vibrations results in renormalization, damping and heating of the vibrational modes. We here formulate a nonequilibrium Green's functions based theory to describe such effects. Studying a generic junction model with an off-resonant electronic level, we find a strong bias dependence of the frequency renormalization and vibrational damping accompanied by pronounced nonlinear vibrational heating in junctions with intermediate values of the coupling to the leads. Combining our theory with ab-initio calculations we furthermore show that the bias dependence of the Raman shifts and linewidths observed experimentally in an OPV3 junction [D. Ward et al., Nature Nano. 6, 33 (2011)] may be explained by a combination of dynamic carrier screening and molecular charging.
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