In this manuscript, the structural, optoelectronic, elastic, vibrational, and thermodynamic properties of RbKM (M = S, Se, Te) chalcogenides are explored via first principles approach. The estimated equilibrium lattice parameters a(c) through the TB-mBJ functional are 5.3876 Å (8.2810 Å), 5.2700 Å (8.6550 Å) and 5.2656 Å (8.7707 Å) for RbKS, RbKSe and RbKTe, respectively. The large value of the cohesive (Ecoh) and formation energy (Eform) reveals that all these compounds are stable at 0 K that may be difficult to decompose at ambient conditions. The direct band gap for RbKS, RbKSe and RbKTe is noted as 4.05 eV, 3.71 eV and 3.63 eV, respectively that is sufficient to declare them as semiconducting materials. So far as, the projected density of states (PDOS), pseudo electrons residing in d orbitals of the rubidium atoms contribute in the conduction region and p orbitals of chalcogen elements partake in the valence band. The optical parameters are determined by Kramers-Kronig relations. The elastic constants unveil that all compounds are mechanically stable and hold anisotropic nature. Here the vibrational properties of RbKM (M = S, Se, Te) are examined through Density functional perturbation theory (DFPT) technique. The Harmonic Approximation Method (HAM) is utilized to seek thermodynamic stability that is ensured due to the observance of negative free energy for all cases. Our theoretical outcomes for RbKM (M = S, Se, Te) can contribute significantly to amelioration for future research in devising optoelectronic and energy harvesting like appliances.