This paper reports on ITO/Ag and ITO/Ni thin transparent conductive electrodes (TCE) for optoelectronics device applications. The ITO/Ag and ITO/Ni bi-layer TCE were deposited on Si and glass substrates by thermal evaporator and radio frequency (RF) magnetron sputtering. Post-annealing was performed on the samples at 600°C in air. Electrical, optical and morphological characteristics were investigated by means of Hall Effect measurement system, UV-Vis spectrophotometer and atomic force microscope (AFM). The measured electrical resistivity of ITO/Ag (0.5 × 10-4 Ωcm) is lower than ITO/Ni (1.2 × 10-4 Ωcm) due to the high carrier concentration of ITO/Ag of 12.0 × 1021 cm-3. Optical transmittance at visible ranges of ITO/Ag (70%) is higher than the ITO/Ni (44%). Higher surface roughness and smaller grain sizes of ITO/Ag as compared to the ITO/Ni are factors that contribute to the good quality of TCE characteristics.