Growth Rates In Excess Research Articles

Revisiting Deficit Hysteria

THE LATEST ECONOMIC NEWS (May 2004) from the United States, Japan, and Asia is positive. Of all the G7 countries only Canada remains obsessed with balanced budgets and avoiding deficits. In Japan unemployment has now fallen to 4.7 per cent from 5.4 per cent a year ago and growth is a robust 5.6 per cent The United States is running a deficit that is almost 5 per cent of its GDP, which the Democrats deplore and the New York Times dislikes. But an economic recovery is taking root. Growth is 4.2 per cent and unemployment has dropped to 5.6 per cent from 6 per cent a year ago. The Chinese and Indian economies are experiencing booms with growth rates in excess of 9 per cent in China and over 10 per cent in India. Canada with its zealous policy of balanced or surplus budgets has growth of 1.6 per cent and unemployment of 7.3 per cent. In Europe, with overall unemployment at 8.8 per cent, the European Union continues to denounce countries like France and Germany that have run deficits that exceed 3 per cent of the GDP or 60 per cent of the debt-to-GDP ratio on the grounds that they are violating the stability pact that governs the common currency and the very monetarist European central bank. But unemployment is 9.8 per cent in France and 10.5 per cent in Germany. The one major European country that so far has refused to join the stability pact and the common currency, Great Britain, has an

Value versus growth stocks in Singapore

This study examines value and growth stocks in Singapore. Specifically, we examine the value premium up to 5 years after the value and growth portfolio formation. We also examine if growth (value) stocks really indicate higher (lower) company profits in the later years, whether analysts’ forecasts are overly optimistic/pessimistic, and if earnings and earnings growth exhibit mean reversion. Our findings are, first, there is a value premium for Singapore stocks, but the premium is concentrated in the first 2 years after the portfolio formation. Second, value (growth) stocks do indicate low (high) earnings growth rates and low (high) return on equity (ROE) in the following years. Third, earnings growth is significantly overestimated for growth stocks but it is not underestimated for value stocks, indicating a one-way over-reaction. Finally, there is some evidence of mean reversion for excess ROE but not for excess earnings growth rates.

Linear and nonlinear instabilities of a Blasius boundary layer perturbed by streamwise vortices. Part 2. Intermittent instability induced by long-wavelength Klebanoff modes

Abstract : This report presents theoretical results on the stability properties of a Blasius boundary layer perturbed by Klebanoff distortions with a relatively long spanwise scale. Even relatively weak Klebanoff modes can alter the near-wall curvature of the underlying flow by O(1) and, hence, introduce linear instabilities with larger characteristic growth rates and frequencies than those of the Tollmien-Schlichting waves in an unperturbed Blasius flow. A localised distortion supports both sinuous and varicose modes of instability, with the growth rates of the sinuous modes being likely to be larger, in general. Overall, the instability is intermittent in time and localised in space, being confined to a finite part of the Klebanoff mode cycle and to a specific window(s) along the streamwise direction. A spanwise periodic distortion supports spatially quasi-periodic modes (via the parametric resonance mechanism), which may be viewed as modified T-S waves with excess growth rates when the Klebanoff modes are weak. In spite of the simplifications involved in this theory, its predictions appear qualitatively consistent with some of the unusual characteristics of the high-frequency wavepackets observed during previous experiments. The nonlinear development of a localised sinuous mode is followed across a sequence of asymptotic regimes using the non-equilibrium critical-layer theory.

Fluorocarbon dielectrics via hot filament chemical vapor deposition

Fully dense fluorocarbon films can have dielectric constants ( κ) of less than 2.0. By eliminating the use of plasma excitation, hot filament chemical vapor deposition (HFCVD) permits the deposition of porous fluorocarbon films having even lower dielectric constants. HFCVD also offers the ability to tailor film chemistry. Linear –CF 2– chain structures can be specifically initiated, producing well-defined functional groups at the chain ends and film growth rates in excess of 1 μm/min. Selectively copolymerization with other monomers is also possible via HFCVD. The HFCVD process can be scaled up for deposition onto large diameter substrates.

SOUTH AFRICAN MANUFACTURING IN AN AFRICAN CONTEXT

South Africa is a case of an African economy where significant macro-economic reform, including trade liberalisation, has taken place over the past six years. Despite this, the country has yet to experience significant private sector growth and job creation. Average GDP growth between 1994 and 2001 was 2.7 per cent, below the average of 3.3 per cent during the 1970s and well below the estimated 6 per cent required to significantly address unemployment. During the period 1990 to 1999 the growth in gross fixed capital formation was only 1.4 per cent per annum, with investment growth only beginning to register annual growth rates in excess of 4 per cent per annum over recent years. This low GDP and investment growth is consistent with the decline in employment in manufacturing since 1994. Firm-level data may be useful to identify enterprise-level constraints underlying the weak performance. The purpose of this paper is to discuss the results of a firm-level survey of manufacturing firms in South Africa in the context of the results from eight other manufacturing surveys elsewhere in Africa. The survey was based on the RPED format and was conducted over a two-year period amongst 135 manufacturing firms (out of 474 in the population) in the North West Province region of South Africa. The paper is structured as follows. In section two the RPED in eight other African countries is described. In section three the South African survey is described and in section four the results are compared to those from the eight other surveys in Africa. Section five concludes.

GaN Boule Growth: A Pathway to GaN Wafers with Improved Material Quality

Hydride vapor phase epitaxial growth of GaN boules was investigated. GaN boules were formed at growth rates in excess of 100 μm/h, resulting in boules as long as 5 mm in the c-axis direction. The boules were sliced into wafer blanks. Lapping, polishing and chemical-mechanical polishing was employed to produce wafers with a slightly stepped surface. Dislocations were decorated with hot phosphoric acid etching so that the change in defect density with boule length might be studied. Etch pit density correlated to threading dislocation density as measured by plan-view transmission electron microscopy and synchrotron white beam X-ray topography. The dislocation density of the GaN fabricated from the boules was as low as 10 4 cm -2 .

A Demographic Profile of the Tawahka Amerindians of Honduras

Latin America's lowland indigenous groups have been characterized in contradictory ways. Are populations shrinking or growing? Do groups face cultural extinction, or are they increasingly asserting their ethnic identities? This article uses a case study of the Tawahka Amerindians of Honduras to show how basic demographic techniques can shed light on these issues. A multimethod approach resolves conflicting reports of population growth and ethnic admixture within the 1,000‐strong population. Household surveys indicate a contemporary growth rate in excess of 4 percent; a review of historical sources suggests that this rapid growth has been building for more than fifty years. Although genealogical evidence shows high levels of interethnic mixing since 1900, the Tawahka retain their language and identity. The potentially negative effects of rapid population growth on local resources are likely to be mitigated as the Tawahka translate their renewed ethnic identity into political gains, which in turn have increased educational and economic opportunities. Closer attention to microdemographic processes is recommended for those involved in the long‐term management of Latin America's indigenous homelands.

Modeling phytoplankton production: problems with the Eppley curve and an empirical alternative

MEPS Marine Ecology Progress Series Contact the journal Facebook Twitter RSS Mailing List Subscribe to our mailing list via Mailchimp HomeLatest VolumeAbout the JournalEditorsTheme Sections MEPS 238:31-45 (2002) - doi:10.3354/meps238031 Modeling phytoplankton production: problems with the Eppley curve and an empirical alternative Mark J. Brush1,*, John W. Brawley2, Scott W. Nixon1, James N. Kremer3 1Graduate School of Oceanography, University of Rhode Island, Narragansett, Rhode Island 02882-1197, USA 2Tetra Tech EM Inc., 440 Commercial St., Boston, Massachusetts 02109, USA 3Department of Marine Sciences, University of Connecticut at Avery Point, Groton, Connecticut 06340, USA *E-mail: brush@vims.edu ABSTRACT: Papers reporting the results of dynamic simulation models of aquatic ecosystems tend to show predicted concentrations of the state variables. The phytoplankton compartment is typically represented as predicted biomass, expressed as the concentration of chlorophyll a, particulate carbon, or particulate nitrogen. While computed values of phytoplankton biomass generally agree with observations, many of these same models significantly underestimate primary production. Existing simulation models often base the calculation of primary production on the Eppley curve, which sets the maximum daily phytoplankton growth rate as a function of temperature. Despite the apparent wide applicability of the Eppley curve, an increasing number of culture and field studies have measured growth rates in excess of those predicted by the curve, which may explain why existing models often underestimate primary production. An alternate empirical formulation which predicts daily phytoplankton production from biomass, photic depth, and incident irradiance has been shown to apply in a variety of nutrient-rich estuarine systems. Despite the large number of systems in which these empirical models have been developed, they predict remarkably similar rates of daily and annual production. Furthermore, these empirical models predict rates of production in excess of those predicted by the Eppley curve. The empirical formulation therefore presents an alternative to the Eppley curve in dynamic ecosystem models, and may result in more accurate predictions of primary production by these models. KEY WORDS: Phytoplankton · Primary production · Ecosystem model · Empirical model Full text in pdf format PreviousNextExport citation RSS - Facebook - Tweet - linkedIn Cited by Published in MEPS Vol. 238. Online publication date: August 08, 2002 Print ISSN: 0171-8630; Online ISSN: 1616-1599 Copyright © 2002 Inter-Research.

Okun's Law Does the Austrian unemployment-GDP relationship exhibit structural breaks?

Okun's Law postulates an inverse relationship between movements of the unemployment rate and the real gross domestic product (GDP). Empirical estimates for US data indicate that a two to three percent GDP growth rate above the natural or average GDP growth rate causes unemployment to decrease by one percentage point and vice versa. In this investigation we check whether this postulated relationship exhibits structural breaks by means of Markov-Chain Monte Carlo methods. We estimate a regression model, where the parameters are allowed to switch between different states and the switching process is Markov. As a by-product we derive an estimate of the current state within the periods considered. Using quarterly Austrian data on unemployment and real GDP from 1977 to 1995 we infer only one state, i.e. there are no structural breaks. The estimated parameters demand for an excess GDP growth rate of 4.16% to decrease unemployment by one percentage point. Since only one state is inferred, we conclude that the Austrian economy exhibits a stable relationship between unemployment and GDP growth. (author's abstract)

Modified GSMBE for higher growth rate and non-selective growth

Gas source molecular beam epitaxy (GSMBE) is a versatile tool for epitaxial growth of Si and SiGe from hydride precursors offering control on the atomic level, low thermal budget, a host of in-situ surface diagnostic tools, and possibility of selective epitaxial growth (SEG). However, the technique suffers from a much smaller growth rate in comparison to chemical vapour deposition (CVD) or solid source MBE. Where a process requires non-selective epitaxial growth (NSEG), the large contrast between growth rates over silicon and SiO 2 surfaces make it impractical. These deficiencies are overcome by addition of a pumping system with managed throughput thus allowing the system to be operated in a new ultra low pressure CVD (ULPCVD) mode as well as the conventional GSMBE mode. The modified system can achieve growth rate in excess of 0.5 μm/h and full NSEG in the ULPCVD mode while maintaining all the capability and advantages of GSMBE mode. The materials and structures are characterised and are shown to be better in many respects compared with those grown under conventional GSMBE.

Material properties and growth process of microcrystalline silicon with growth rates in excess of 1 nm/s

ABSTRACTThe expanding thermal plasma (ETP) has been used to deposit microcrystalline silicon (µc-Si:H) with rates up to 2.7 nm/s. Typical material properties of well crystallised material are crystallite sizes of 20 nm, photo- and dark conductivity of 2×10−5 and 2x10−7 S/cm respectively, and an activation energy of 600 meV. The radical densities of SiH3, SiH, and Si present in the gas phase have been quantified. In conditions where [.proportional µc-Si:H is deposited the atomic hydrogen flux towards the surface is of the same magnitude or higher as the flux of deposited radicals. Furthermore, the abundance of radicals such as SiH and Si is large and may contribute several tens of percent to the deposition rate.

Cryogenic deposition of carbon nitride films using a neutralized atomic nitrogen beam

Thin carbon nitride CN x films were successfully prepared by co-deposition at cryogenic temperatures, ranging from 20 to 80 K, of fullerene C 60 or cyanogen with energetic neutralized atomic nitrogen fluxes under initial ion beam energies varied from 200 to 700 eV. Film growth rates in excess of 1 μm h −1 and stoichiometries ranging from almost pure C to above 40 at.% N were formed. Film hardness and adherence were good for films with approximately 20 at.% nitrogen while higher nitrogen concentrations yield cyano-rich, soft films. The Fourier transform infrared, Raman and X-ray photoelectron spectra showed the predominantly sp 2 character of the chemical bonding between nitrogen and carbon in the films containing 29–37 at.% N, and suggest an amorphous graphite-like structure for the carbon nitride C 3N 4 phase present along with graphitic carbon as a by-product in the films prepared by cryodeposition onto Si substrates. X-Ray diffraction and scanning electron microscopy studies did not indicate the presence of any crystalline carbon nitride polymorphs in the film.

Using Near Infrared Reflectance Spectroscopy to Schedule Nitrogen Applications on Dwarf‐Type Bermudagrasses

Due to the high rates of N fertility necessary for producing high‐quality turfgrasses, quick, reliable methods of determining the N status of turfgrasses would be valuable management tools. The first objective of this study was to evaluate the use of near infrared reflectance spectroscopy (NIRS) to schedule N fertilization on two dwarf‐type bermudagrasses [Cynodon dactylon (L.) Pers. × C. transvaalensis Burtt Davy]. The second objective was to test the accuracy of NIRS‐predicted mineral tissue concentrations. The third objective was to study the effect of N fertility on thatch development. ‘Tifdwarf’ and ‘FloraDwarf’ bermudagrasses grown on sand–peat (9:1 by volume) were subjected to five treatments using time, NIRS‐predicted N thresholds, and a visual quality rating threshold to schedule applications of (NH4)2SO4 for 20 wk per growing season in 1997 and 1998. There were positive linear relationships between total Kjeldahl nitrogen (TKN) and NIRS‐predicted N in 1997 (r2 = 0.76; slope = 0.96) and 1998 (r2 = 0.92; slope = 1.06). NIRS‐scheduled fertility resulted in similar quality with less fertilizer than time or visual quality‐based fertility. The NIRS mineral concentration predictions for K, Ca, Mg, Fe, Zn, Mn, and Cu were positively correlated with traditional laboratory methods, but there was not sufficient precision in measurements to use NIRS for determination of these nutrients. Thatch development and yields were greater in treatments receiving higher rates of fertilizers, suggesting that excessive growth rates due to high rates of applied fertilizer may have contributed to thatch development.

Development of GaAs space solar cells by high growth rate MOMBE/CBE

Realization of high-quality GaAs photovoltaic materials and devices by metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 μm/h is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two-dimensional layer-by-layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n (Si) and p (Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) solar cells fabricated at growth rates in excess of 3 μm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE/CBE as reduced toxicity alternatives for the production of space III–V solar cells.

Observations of the feeding behavior and growth rates of the heterotrophic dinoflagellate Polykrikos kofoidii (Polykrikaceae, Dinophyceae)

This paper describes the feeding behavior of the heterotrophic dinoflagellate Polykrikos kofoidii Chatton on Gymnodinium catenatum Graham. Polykrikos kofoidii used a nematocyst to pull the prey into its body through the posterior sulcus, finally engulfing the prey completely. We measured growth rates of P. kofoidii on diverse assemblages of dinoflagellate prey. Gymnodinium catenatum was one of the best food sources for P. kofoidii, supporting a rapid growth rate in excess of one doubling per day. This suggests that G. catenatum populations may be controlled by P. kofoidii predation in natural bloom conditions. However, P. kofoidii cannot be a potential bloom-controlling factor in all toxic dinoflagellate blooms because it is rapidly killed by at least three Alexandrium strains.

High growth rate metal-organic molecular beam epitaxy for the fabrication of GaAs space solar cells

In this work, the epitaxial growth of GaAs photovoltaic devices using metalorganic molecular beam epitaxy (MOMBE) and chemical beam epitaxy (CBE) with growth rates in excess of 3 μm/h is undertaken. The performance of these preliminary devices offer encouraging evidence for MOMBE and CBE as possible alternatives to the more common metalorganic chemical vapor deposition (MOCVD) for the production of III-V solar cells. Copyright © 2000 John Wiley & Sons, Ltd.

Macrosomia—“No Big Deal”?

Macrosomia is a label implying abnormally large size. The diagnosis of fetal macrosomia is imprecise, and as such may lead to incorrect inferences and unnecessary interventions. To the extent that such conclusions are relevant, the definition of potential birthweight abnormality should be up-to-date and population-specific.There is potential value in ultrasound measurement of fetal growth in the presence of such complications as diabetes, where excessive growth rates may occur and warrant intervention. However, the prediction of macrosomia is potentially inaccurate until the moment of birth. Even when the diagnosis is correct, a minority of such infants have associated complications. Induction of labour for macrosomia without other complications is inappropriate, and has not been demonstrated to improve maternal or neonatal outcomes. The perception that a fetus is macrosomic increases the likelihood of un-indicated interventions, and such labels should be avoided.Pregnant women and their partners should be advised that macrosomia cannot be predicted, and that birth injuries cannot be prevented by efforts to predict the condition. Those providing intrapartum care should pay attention to the progress of labour, regardless of the perception of fetal size, and should be prepared to deal effectively with shoulder dystocia at all births, regardless of, and in fact resisting presumptions about, fetal weight.

Diethyldisulphide as sulphur precursor for the low temperature metalorganic vapour-phase epitaxy of ZnS: growth, morphology and cathodoluminescence results

We report on the atmospheric pressure metalorganic vapour-phase epitaxy (MOVPE) growth of ZnS using diethyldisulphide (Et 2S 2) as sulphur precursor in combination with electronic grade dimethylzinc : triethylammine (Me 2Zn : Et 3N). Et 2S 2 is used here for the first time as a substitute of diethylsulphide (Et 2S) to achieve low temperature ZnS growth in pyrolytic MOVPE. It is demonstrated that Et 2S 2 lowers the temperatures of the process by almost 150°C with respect to Et 2S, leading to growth rates in excess of 0.5 μm/h just above 400°C. Scanning electron microscopy observations and 10 K cathodoluminescence (CL) measurements performed on the as-grown samples are also reported. CL spectra show both free-to-bound and intense self-activated band emissions peaked at 3.683 and 2.58 eV, respectively. These emissions are attributed to unintentional Na and halogen (most probably Cl) doping of ZnS epilayers, likely arising from both Et 2S 2 and Me 2Zn : Et 3N precursors. Finally, monochromatic CL images of the samples demonstrate the interplay between point defects induced radiative emissions and non-radiative recombinations associated with the epilayer extended defects.

Low-temperature metalorganic vapor phase epitaxial growth of ZnS using diethyldisulphide as a sulphur precursor

The atmospheric pressure metalorganic vapor phase epitaxy (MOVPE) growth of ZnS using diethyldisulphide (Et2S2) as a sulphur precursor in combination with dimethylzinc:triethylammine adduct is reported. Et2S2 is used to achieve low-temperature (<400 °C) growth of ZnS by pyrolytic MOVPE. The substitution of diethylsulphide (Et2S) with Et2S2 lowers the temperature of the process by almost 150 °C, leading to growth rates in excess of 0.5 μm/h at around 400 °C. The growth study is supplemented by the H1 and C13 nuclear magnetic resonance analysis of the Et2S2 batch used and by the results of mass spectrometry. The latter measurements allowed us to study the fragmentation path of the Et2S2+ ion. The ∼150 °C reduction of the ZnS growth temperature is explained as being due to the weaker S–C bonds occurring in the Et2S2 molecule with respect to those of Et2S; this is ascribed to the occurrence of the stronger S–S bond, which destabilizes the S–C bonds.

High Growth Rate Metal-Organic Molecular Beam Epitaxy for the Fabrication of GaAs Space Solar Cells

AbstractRealization of high quality GaAs photovoltaic materials and devices by Metal-organic Molecular Beam Epitaxy (MOMBE) with growth rates in excess of 3 microns/ hours is demonstrated. Despite high growth rates, the optimization of III/V flux-ratio and growth temperatures leads to a two dimensional layer by layer growth mode characterized by a (2×4) RHEED diagrams and strong intensity oscillations. The not intentionally doped layers exhibit low background impurity concentrations and good luminescence properties. Both n(Si) and p(Be) doping studies in the range of concentrations necessary for photovoltaic device generation are reported. Preliminary GaAs (p/n) tunnel diodes and solar cells fabricated at growth rates in excess of 31µm/h exhibit performances comparable to state of the art and stress the potential of the high growth rate MOMBE as a reduced toxicity alternative for the production of Space 111-V solar cells.