Growth Of ZnO Research Articles

ZnO thin films with stable, tunable electrical and optical properties deposited by atomic layer deposition using Et2Zn:NEtMe2 precursor

ZnO thin films were deposited via atomic layer deposition (ALD), using Zn precursor, DEZDMEA (Et2Zn:NEtMe2) and H2O as a reactant. The design of DEZDMEA aimed to achieve enhanced stability and reduced decomposition compared to traditional DEZ (Et2Zn) precursor, as verified through NMR analysis, leading to the ZnO thin films with no-detectable impurities. The growth characteristics of ZnO thin films with the DEZDMEA were systematically evaluated, and high growth rate and the self-limiting reaction were observed. The comparable ZnO growth rate using DEZDMEA with those using DEZ was shown due to the selective removal of one Et and NEtMe2 ligands during the surface adsorption of DEZDMEA as established by DFT calculations. Additionally, increasing the precursor pulse and reducing the H2O pulse time resulted in decreased resistivity of the ZnO thin films, due to the modulation of n-type defects. This approach provided a consistent contour map for achieving stable, reproducible, and tailored resistivity depending on the DEZDMEA pulse time, and H2O pulse time with its vapor pressure. Moreover, the optical band gap could be modulated as well. The utilization of DEZDMEA is anticipated to be a robust and effective method in ALD for Zn-related deposition, promising substantial advantages for commercial applications.

Glucose-assisted preparation of vacancy-rich ZnO sheets for photocatalytic activity enhancement

Vacancy-rich ZnO sheets with (1 0 0) facet were synthesized by the glucose-assisted calcination method. By introducing glucose to control the atmosphere, oriented growth of ZnO with oxygen vacancy was realized. Experimental results showed that the glucose-assisted calcination provided oxygen-poor environment for the formation of oxygen vacancy and promoted the transformation of ZnO from rods to sheets. ZnO sheets exhibited a high photocatalytic activity and regeneration ability. After 60 min of irradiation, methyl orange was completely decolorized and the degradation rate was still at 96 % after four-cycle experiments. The synergistic effect of oxygen vacancy and non-polar (1 0 0) facet improved the photocatalytic property of ZnO.

Influence of TiO2 doping on the grain growth and electrical properties of ZnO–Cr2O3-based varistor ceramics

The influence of TiO2 doping in the range 0–1 mol% on the microstructure and electrical characteristics of ZnO–Cr2O3-based varistor ceramics was studied. Exaggerated grain growth is observed owing to the presence of TiO2, which triggers the formation of inversion boundaries (IBs) in only a limited number of grains. TiO2 acts as the controller of ZnO grain growth, adjusting the grain size of the ZnO from 5.6 to 9.3 μm, and thus controlling the breakdown voltage. Meanwhile, the TiO2 doping decreased the height of the Schottky barrier, resulting in a lower nonlinear coefficient and a higher leakage current. The results are important for the control of the ZnO grain size with ZnO–Cr2O3-based varistors (having different nominal breakdown voltages) to obtain a suitable thickness for applications.

H2S gas sensing properties of ZnO–SnO2 branch–stem nanowires grown on a copper foil

ZnO–SnO2 branch–stem nanowires were fabricated on a Cu foil using a chemical vapor deposition system through a two-step process. Firstly, SnO2 NWs were synthesized directly on a Cu foil substrate by evaporating SnO powder as a source material. Then, the as-synthesized SnO2 NWs were used as templates for the growth of ZnO–SnO2 branch–stem NWs. The effect of growth time on the growth of the SnO2 NWs on the Cu foil was studied. The gas sensing properties of the SnO2 NW and ZnO–SnO2 branch–stem NW devices were studied using various toxic gases at different temperatures. Both devices exhibited high sensitivity, high selectivity, fast response and recovery times, and stability toward H2S gas. Compared to the pristine SnO2 NW device, the ZnO–SnO2 branch–stem NW device exhibited higher sensitivity and faster response rate toward H2S. Finally, the gas sensing mechanism was also discussed.

Barrier heights and strong fermi-level pinning at epitaxially grown ferromagnet/ZnO/metal Schottky Interfaces for opto-spintronics applications

Schottky contacts at the ferromagnet/ZnO interface are good candidates for the realization and control of several semiconductor emerging magnetic phenomena such spin injection and spin-controlled photonics. In this work, we demonstrate the epitaxial growth of single-phase and wurtzite-ZnO thin films on fcc Pt/Co0.30Pt0.70 (111) electrodes by molecular beam epitaxy technique. While the magnetic properties of the Pt/Co0.30Pt0.70 buffer remain unchanged after the ZnO growth, the electric measurements of back-to-back Schottky diodes reveal Schottky barrier heights at the metal/ZnO interfaces in the range of 590–690 meV using Cu, Pt and Co0.30Pt0.70 contacts. A pinning factor S and a charge neutrality level (CNL) ΦCNL of 0.08 and 4.94 eV, respectively, are obtained indicating a strong Fermi-level pining with a CNL level that lies 0.64 eV bellow the conductance band of ZnO semiconductor. These experimental findings indicate that Co0.30Pt0.70/ZnO interface follows the metal-induced gap states model and can open a pathway for the realization of opto-spintronics applications such spin-LEDs.

Tailoring the Surface Properties of ZnO Nanowires by ALD Deposition

AbstractInnovative research on metal‐oxide gas sensors involves nanostructuring and surface modification as key elements to tailor sensitivity and selectivity. This work addresses a ZnO nanowire‐based sensing device obtained by coupling a lithographically prepared substrate with hydrothermal ZnO growth, to align and interconnect the nanowires between two electrical contacts. Furthermore, conformal coating by atomic layer deposition technique allows functionalization of the surface of the nanowires with sub‐monolayers of Al2O3 and TiO2. A detailed analysis is carried out from a morphological and structural point of view with photoluminescence and Raman spectroscopy and electron microscopy. The material characterization results are analyzed in comparison with the functional characterization in gases toward reducing (NO2) and oxidizing (H2S) gases. Unparalleled sensing enhancement with Atomic Layer Deposition functionalization is obtained for NO2 detection. The passivation role of surface states is discussed combining information from experimental techniques with a proposed model.

Photoperiod-dependent effects of zinc oxide nanoparticles on the growth and reproduction of Daphnia pulex

The discharge of metal nanoparticles into the water inevitably poses a threat to aquatic organisms and the balance of the aquatic ecosystem. Photoperiod is one of the most important ecological factors for the development of cladocerans. In addition, different light conditions can also affect the toxicity of metal nanoparticles. In this study, we studied the effects of four photoperiods (8L/16D, 10L/14D, 14L/10D, and 16L/8D) combined with three concentrations of ZnO NPs (0 mg L−1, 0.05 mg L−1, and 0.10 mg L−1) on the growth and reproduction of Daphnia pulex. With the increase of photoperiod, the maternal body size and growth rate increased first and then decreased; the first time to reproduction was advanced, and broods and the total offspring also increased. Under the influence of ZnO NPs, growth rate and reproductive capacity were inhibited. The photoperiod 8L/16D and 16L/8D interacted with ZnO NPs on the growth of D. pulex, which significantly decreased the growth rate. Besides, the interaction between photoperiod 8L/16D and ZnO NPs decreased the reproduction ability of D. pulex. These results suggest that the effects of zinc oxide nanoparticles on the growth and reproduction of D. pulex is photoperiod dependent, which is useful for assessing the risk of pollutants to cladoceras under different light conditions.

Enhancement of photodetector performance of aluminum-doped zinc oxide thin films fabricated via SILAR method: Structural, optical, and electrical analysis

This study presents a comprehensive analysis of the structural, optical, electrical, and photosensing characteristics of aluminum-doped zinc oxide (Al:ZnO) thin films, fabricated via successive ionic layer adsorption and reaction (SILAR) techniques. The Raman and X-ray diffraction (XRD) analyses validated the hexagonal wurtzite structure and revealed that Al doping enhances crystallinity and crystal growth of ZnO. The average crystallite size increased from 21.6 nm in undoped sample to 23.8 nm in 5.0 wt% Al-doped sample, while strain effects decreased from 4.67 × 10-3 to 4.36 × 10-3. Scanning electron microscopy (SEM) images revealed improved film morphology and more defined geometries with increased Al doping, while energy-dispersive X-ray analysis (EDAX) confirmed successful Al integration into the ZnO lattice. Optical analyses indicate a narrowing of the ZnO bandgap to 2.81 eV in 5.0 wt% Al:ZnO from 3.02 eV in the undoped variant, while photoluminescence (PL) peak positions remains unchanged. Time-resolved fluorescence (TRF) indicated a reduction in electron lifetime with higher Al doping. Furthermore, Hall effect assessments reveal a decrease in carrier mobility and electrical resistivity, alongside a rise in carrier concentration with higher Al content. The photodetection efficacy was substantially improved with Al doping, particularly at 2.5 wt% Al, achieving a responsivity of 42.5 × 10-2 A/W, external quantum efficiency of 99.3 %, and detectivity of 1.8 × 1011 Jones. These findings exhibit that Al-doping substantially enhances the photodetection properties of ZnO thin films.

Enhanced photocatalytic performance by ZnO/Graphene heterojunction grown on Ni foam for methylene blue removal

ZnO nanostructures were obtained by electrodeposition on Ni foam, where graphene was previously grown by chemical vapor deposition (CVD). The resulting heterostructures were characterized by X-ray diffraction and SEM microscopy, and their potential application as a catalyst for the photodegradation of methylene blue (MB) was evaluated. The incorporation of graphene to the Ni substrate increases the amount of deposited ZnO at low potentials in comparison to bare Ni. SEM images show homogeneous growth of ZnO on Ni/G but not on bare Ni foam. A percent removal of almost 60% of MB was achieved by the Ni/G/ZnO sample, which represents a double quantity than the other catalysts proved in this work. The synergistic effects of ZnO-graphene heterojunctions play a key role in achieving better adsorption and photocatalytic performance. The results demonstrate the ease of depositing ZnO on seedless graphene by electrodeposition. The use of the film as a photocatalyst delivers interesting and competitive removal percentages for a potentially scalable degradation process enhanced by a non-toxic compound such as graphene.

Influence of FRET, charge separation, and density of defect states on the improvement of UV light-driven photocatalytic activity of PMMA capped ZnO nanomaterials

This study employs oxidative polymerization, co-precipitation, and ex-situ surface capping techniques to fabricate pristine PMMA, ZnO, and PMMA-capped ZnO specimens with varying PMMA concentrations. X-ray diffraction reveals reduced directional growth of ZnO, while Fourier transform infrared spectroscopy confirms PMMA chain bonding with ZnO in PMMA-capped specimens. Scanning electron microscopy illustrates decreased average length and thickness of ZnO nanoplates post-surface modification, indicating a robust interaction between PMMA and ZnO. X-ray photoelectron spectroscopy identifies suppressed defects, including zinc interstitials and oxygen vacancies, affirming ZnO surface capping by PMMA. Absorption spectra display a blue shift in band-edge or increased bandgap, attributed to the combined effects of band alignment offset and reduced oxygen vacancy states. Luminescence spectra show gradual quenching linked to PMMA content increase, with defect-related emission suppression attributed to ZnO surface capping. UV emission suppression is ascribed to donor concentration-dependent Förster resonance energy transfer (FRET) from PMMA to ZnO. Photocatalytic tests reveal enhanced efficiency in PMMA-capped ZnO catalysts attributed to synergies involving charge separation, bulk recombination centers, oxygen vacancy states, and FRET. Efficiency improves with higher PMMA content, aligning with changes in emission intensity. The study demonstrates emission intensities' tunability through surface capping and donor concentration-dependent FRET, ultimately influencing degradation efficiency.

Transistors with ferroelectric ZrXAl1−XOY crystallized by ZnO growth for multi-level memory and neuromorphic computing

Ferroelectric (FE) field-effect transistors are interesting for their non-destructive readout characteristic and energy efficiency but are difficult to integrate on silicon platforms. Here, FE ZrXAl1−XOY (ZAO) is demonstrated by compressive strain in contact with ZnO. The metal-ferroelectric-semiconductor-metal capacitor exhibits a substantial remnant polarization of 15.2 µC cm−2, along with a bowknot-like anti-clockwise hysteresis in the capacitance curves. The FE-ZAO gated ZnO thin-film transistor presents a large memory window (3.84 V), low subthreshold swing (55 mV dec−1), high ION/IOFF ratio (≈108), and low off-state current (≈1 pA). The grazing incidence X-ray diffraction and scanning transmission electron microscopy analyses reveal the ferroelectric rhombohedral phase (space group R3m) in the nanocrystal ZAO, containing an angle of ≈71.7° between the [111] and [11-1] directions with d111-spacing of 3.037 Å and d11-1-spacing of 2.927 Å. Finally, the memory and neuromorphic applications are analyzed by demonstrating multi-level memory and synaptic weight performance with a high learning accuracy of 91.82%.

The Effects of Alkaline Earth Metal Ions on the Crystal Growth of ZnO Using Layered Zinc Hydroxide Acetate as a Precursor

The Effects of Alkaline Earth Metal Ions on the Crystal Growth of ZnO Using Layered Zinc Hydroxide Acetate as a Precursor

SILAR Growth of ZnO NSs/CdS QDs on the Optical Fiber-Based Opto-Electrode with Guided In Situ Light and Its Application for the "Signal-On" Detection of Inflammatory Cytokine.

In this study, a novel integrated photoelectrochemical (PEC) sensor platform was proposed, utilizing an optical fiber (OF) as the working electrode for guided in situ light. A CdS quantum dots (QDs)/ZnO nanosheets (NSs) n-n heterojunction was quickly and easily constructed on the OF surface by successive ionic layer adsorption and reaction (SILAR). Au nanoparticles (NPs)@dsDNA as a capturing probe were modified on the CdS QDs/ZnO NSs@OF (CZ@OF). Due to the energy transfer between Au NPs@dsDNA and CdS QDs, the resultant opto-electrode has a lower background near zero, enabling the "signal-on" detection of biomarkers (interleukin-6 (IL-6) as a model). The OF-PEC biosensor demonstrated a wide linear range from 1 to 100 pg mL-1 with a regression coefficient (R2) of 0.9958 and an impressive detection limit (LOD) of 0.19 pg mL-1. More significantly, the proposed OF-PEC can be successfully used for the detection of IL-6 in serum samples from patients with pulmonary arterial hypertension, and it showed consistency and is more sensitive to trace concentrations compared to BD FACSCanto II flow cytometry used at the hospital. This holds significance for an early disease diagnosis. Therefore, the proposed OF-PEC not only achieves integration of the light source and sensing interface but also enables sensitive and accurate "signal-on" detection of IL-6. Furthermore, due to the flexibility and remote detection capabilities of OF, the application of OF-PEC is expected to be expanded more widely. This approach opens up possibilities for advances in PEC sensing.

Heterostructure interfaces and dimensionally transformed GaO/ZnO nanostructures for room-temperature hydrogen gas sensors

This work demonstrates the significant prospective of GaO/ZnO hybrid nanostructures for high-performance hydrogen gas sensing. The wavy grains of GaO support the structural transformation of ZnO nanorod into nanosheets by providing appropriate nucleation sites for ZnO growth. Compared to pure ZnO and GaO, GaO/ZnO exhibited a sixfold increase in H2 response (60% at 500 ppm), excellent selectivity towards H2 among other interfering gases, and outstanding long-term stability (retaining 98% of its initial response after 36 days). This greater performance rises from the unique morphology and different surface interactions within the GaO/ZnO hybrid nanostructure, assisting multiple adsorption sites and various hydrogen interaction pathways. Alloying effects, internal strain, and the presence of both GaO and ZnO regions within the nanosheets further contribute to enhanced sensitivity, selectivity, and stability.

Highly sensitive self-powered solar-blind ultraviolet photodetectors based on n-Zn1-xFexO/p-Si heterojunctions

The pristine and iron-doped ZnO thin films were fabricated on p-type silicon and glass substrates using the radio-frequency magnetron sputter deposition technique. The structural, morphological, and electrical properties of the deposited thin films were analyzed using X-ray diffraction (XRD), Raman spectroscopy, scanning electron microscope (SEM), and I-V characteristics. XRD analysis revealed the preferential growth of ZnO along the c-axis, with lattice parameter (c) values of 5.216, 5.234, and 5.241 Å for the pristine ZnO, Zn0.97Fe0.03O, and Zn0.95Fe0.05O thin films, respectively. The crystallite sizes were measured to be 13.2 nm, 16.2 nm, and 18.3 nm for the respective films. The elemental analysis of the deposited films was done under X-ray photoelectron spectroscopy (XPS), which revealed the concentrations of iron Zn0.97Fe0.03O, and Zn0.95Fe0.05O thin films were 2.93 at% and 5.14 at%, respectively. Raman spectroscopy confirmed the presence of the hexagonal wurtzite structural form in the deposited films. The I-V characteristics of the deposited films confirmed the formation of a heterojunction between the film and the silicon substrate. Furthermore, the constructed heterojunction devices were evaluated for their ability to detect ultraviolet (UV) radiations of wavelengths 365 nm and 254 nm. The devices exhibited response and recovery times of less than 1 s. The detectivity values were found to be 0.321 ×1011, 1.051 ×1011, and 2.992 ×1011 Jones for the ZnO/p-Si, Zn0.97Fe0.03O/p-Si, and Zn0.95Fe0.05O/p-Si devices, respectively, under a fixed illumination intensity of 0.812 mW/cm2 for a UVA source with a wavelength of 365 nm. These results confirm the excellent photodetection ability of the constructed devices. The mechanism of UV radiation detection by the devices has also been extensively discussed.

Growth of ZnO nanorods/flowers on the carbon fiber surfaces using sodium alginate as medium to enhance the mechanical properties of composites

The chemical inertness of the carbon fiber (CF) surface results in suboptimal mechanical properties of the prepared composites. To address this issue, we employed a combination of tannic acid and 3-aminopropyltriethoxysilane mixture (TA-APTES) grafted sodium alginate (SA) as a medium to enhance the interfacial properties of composites through the growth of ZnO nanoparticles on CF surfaces. ZnO nanolayers with rod-like and flower-like structures were obtained by adjusting the pH of the reaction system (pH = 10 and 12, respectively). Characterization results show that in comparison with the untreated CF composites, in the flexural strength, flexural modulus, interlaminar shear strength (ILSS) and interfacial shear strength (IFSS) of the as-prepared CF/TA-APTES/SA/ZnO10 (nanorods) composites were improved by 40.8 %, 58.4 %, 44.9 % and 47.8 %, respectively. The prepared CF/TA-APTES/SA/ZnO12 (nanoflowers) composite showed an increase in flexural strength, flexural modulus, ILSS and IFSS by 39.8 %, 63.6 %, 47.3 % and 48.2 %, respectively. These positive results indicate that the ZnO nanolayers increase the interfacial phase area and fiber surface roughness, thereby enhancing mechanical interlocking and load transfer between the fibers and resin matrix. This work provides a novel interfacial modification method for preparing CF composites used in longer and more durable wind turbine blades.

Advances in growth, doping, and devices and applications of zinc oxide

Zinc oxide is a breakthrough multifunctional material of emerging interest applicable in the areas of electronics, computing, energy harvesting, sensing, optoelectronics, and biomedicine. ZnO has a direct and wide bandgap and high exciton binding energy. It is nontoxic, earth-abundant, and biocompatible. However, the growth and characterization of high-quality ZnO has been a challenge and bottleneck in its development. Efforts have been made to synthesize device-quality zinc oxide and unleash its potential for multiple advanced applications. ZnO could be grown as thin films, nanostructures, or bulk, and its properties could be optimized by tuning the growth techniques, conditions, and doping. Zinc oxide could be a suitable material for next generation devices including spintronics, sensors, solar cells, light-emitting diodes, thermoelectrics, etc. It is important and urgent to collate recent advances in this material, which would strategically help in further research and developments in ZnO. This paper provides a coherent review of developments in ZnO growth, leading to its advancing applications. Recent developments in growth technologies that address native defects, current challenges in zinc oxide, and its emerging applications are reviewed and discussed in this article.

Epitaxial ZnO piezoelectric layer on SiO2/Mo solidly mounted resonator fabricated using epitaxial Au sacrificial layer

In solidly mounted resonator (SMR) type of bulk acoustic wave resonator, it is difficult to fabricate single crystalline piezoelectric thin films in a bottom-up process due to the amorphous SiO2 in the low acoustic impedance layer of the acoustic Bragg reflector. In this study, single crystalline ZnO piezoelectric layer on amorphous SiO2/polycrystalline Mo acoustic Bragg reflector is fabricated using a wet etching process of the epitaxial Au sacrificial layer. Epitaxial growth of ZnO was confirmed by X-ray diffraction pole figure and transmission electron microscope electron diffraction pattern. Resonance frequency of 1.3 GHz of epitaxial ZnO SMR was observed using a network analyzer.

Microwave-assisted ZnO-decorated carbon urchin resembling 'shish-kebab' morphology with self-healing and enhanced electromagnetic shielding properties.

Herein, inspired by Acacia auriculiformis fruit, the shish-kebab-like growth of ZnO on carbon urchin (ZnO@CU) was designed using microwave radiation, thus leading to a hierarchal 3D structure that can promote multiple internal reflections through polarization centers. This hierarchal structure was then dispersed in a designer polyetherimide (PEI) matrix containing dynamic covalent bonds that can undergo metathesis, triggered by temperature, to harness self-healing properties in the composite. Such key attributes are required for their potential use in EMI shielding applications where frequent repairs are indispensable. Morphological investigation revealed that the ZnO flower was periodically nucleated like 'shish-kebab' structures on CU surfaces. CU was designed from short carbon fibers using a facile modified method. The EMI shielding performance of the resulting composites was investigated in the X-band, illustrating a shielding effectiveness of -40.6 dB for 2 wt% of ZnO@CU loading, and the composite can be preserved after the self-healing procedure. The ZnO 'kebabs' on 'CU shish' facilitated multiple scattering and numerous polarization centers to improve the EMI shielding performances at extremely low filler contents. In addition, the mechanical and thermal properties of the composite showed improved structural integrity and superior resistance to extreme temperatures, respectively. Overall, the proposed ZnO@CU/PEI composite has great potential to fulfill the increasing demands for lightweight EMI shielding materials in many fields.

Reformation of La0.7Sr0.3MnO3 properties by using ZnO in La0.7Sr0.3MnO3-ZnO heterostructures grown on (001) oriented Si.

Study of the available density of states (DOS) close-to-zero bias for conduction in strongly correlated electron systems, such as half-metallic La0.7Sr0.3MnO3 (LSMO) and its heterostructures, is important for fundamental and application reasons. As the DOS is proportional to the differential conductance (dI/dV), the dI/dV of a 120 Å LSMO film and its reformation in LSMO/ZnO heterostructures was investigated for different ZnO thicknesses. Unlike in conventional metals, the dI/dV of LSMO exhibits a power-law dependent zero-bias anomaly, i.e., dI/dV ∝ Vm (m ∼ 1) near zero bias in the ferromagnetic metallic state at 10 K. The growth of ZnO on LSMO reforms the linear dI/dVvs. V of LSMO near zero bias to non-linear. The exponent 'm' becomes ∼0.5 for a higher ZnO thickness, revealing increased electron-electron interactions and suppression of Kondo-like, double and superexchange interactions, which are responsible for the depression of the DOS of LSMO near zero bias. In a magnetically disordered state, i.e., around the Curie temperature, ZnO reforms the linear V-shaped dI/dV vs. V of LSMO to parabolic U-shaped dI/dVvs.V and controls the electron concentrations in the t2g-orbitals of Mn realized from the DOS simulations. Additionally, ZnO introduces a peak in the dI/dV vs. V due to Fowler-Nordheim tunnelling, and the peak voltage can be tuned by varying the ZnO thickness or temperature from 300 K to 360 K. Such functions of ZnO yield major perspectives for novel applications in thin-film-based devices.