Growth Of Layer Research Articles

Effect of gas pre-decomposition device on the growth of GaN epitaxial layer

In previous studies, the influence of gas phase and surface reactions on the growth of GaN was mainly calculated through simulations. In this study, a novel gas pre-decomposition device (GPDD) was designed to experimentally investigate the effects of gas phase and surface reactions on GaN growth by changing the length and height of the isolation plates (IPs). By varying the structure of the GPDD, the effects on the growth rate and thickness uniformity of the GaN films were studied. The growth rate of the GaN sample slowed with the extension of the IPs because the longer partition plates led to insufficient gas mixing and premature consumption of the precursor trimethylgallium (TMG). The use of GPDD simultaneously achieves high crystal quality and smooth surface morphology of the GaN film. Owing to the use of GPDD, the decomposition of TMG in the pyrolysis pathway was promoted, which suppressed Ga vacancies and C impurities, resulting in weak yellow luminescence bands in the photoluminescence. This study provides a comprehensive understanding of the chemical reaction mechanism of GaN and plays an important role in promoting the development of metal-organic chemical vapor deposition equipment.

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Transition metal silicides represented by MoSi2 have excellent oxidation resistance and are widely used as high-temperature anti-oxidation coatings in hot end components of power equipment. However, the mechanism of temperature-dependent growth of MoSi2 oxidation products has not been revealed. Therefore, this study investigated the formation characteristics of oxide film and silicide-poor compound on MoSi2 at temperatures of 1000 °C–1550 °C through high-temperature oxidation experiments, combined with microscopic Raman spectroscopy, scanning electron microscope, and x-ray diffraction (XRD) characterizations. The result showed that MoSi2 underwent high-temperature selective oxidation reactions at 1000 °C–1200 °C, forming MoO2 and SiO2 oxide film on the substrate. As the oxidation temperature increased to 1550 °C, after 100 h of oxidation, along with the disappearance of MoO2 and the phase transformation of SiO2, a continuous Mo5Si3 layer with a thickness of approximately 47 μm was formed at the SiO2–MoSi2 interface. Thermodynamics and kinetic calculations further revealed the mechanism of temperature-dependent growth of oxidation products (MoO2 and Mo5Si3) during high-temperature oxidation process of MoSi2. As the temperature increased, the diffusion flux ratio of O and Si decreased, leading to a decrease in oxygen concentration at the interface and promoting the growth of the Mo5Si3 layer. Its thickness is an important indicator for evaluating the oxidation resistance of MoSi2 coatings during service. This study provides experimental and mechanistic insights into the temperature-dependent growth behavior of Mo5Si3 during the high-temperature oxidation of MoSi2 coating, and provides guidance for predicting the service life and improving the oxidation resistance of silicide coatings.

In Situ Growth of Nickel Oxide Hole-Transport Layer through the Nickel Oleate Route for High-Performance Perovskite Solar Cells

In Situ Growth of Nickel Oxide Hole-Transport Layer through the Nickel Oleate Route for High-Performance Perovskite Solar Cells

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

The deposition of thin uniform dielectric layers on graphene is important for its successful integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 nanofilms onto graphene grown by chemical vapor deposition onto copper foil. A pretreatment with deionized water (DI H2O) for graphene functionalization was carried out, and, subsequently, trimethylaluminum and DI H2O were used as precursors for the Al2O3 deposition process. The proper temperature regime for this process was adjusted by means of the ALD temperature window for Al2O3 deposition onto a Si substrate. The obtained Al2O3/graphene heterostructures were characterized by Raman and X-ray photoelectron spectroscopy, ellipsometry and atomic force and scanning electron microscopy. Samples of these heterostructures were transferred onto glass substrates by standard methods, with the Al2O3 coating serving as a protective layer during the transfer. Raman monitoring at every stage of the sample preparation and after the transfer enabled us to characterize the influence of the Al2O3 coating on the graphene film.

Experimental research on pull-out behavior of steel-UHPC composite beams with new composite dowels connectors

In order to study a new type of steel-UHPC composite connector, a total of 16 steel-UHPC composite connectors with steel dowels and studs and steel-UHPC composite connectors with steel dowels without studs were designed and manufactured, and the pull-out test, finite element simulation and theoretical analysis were carried out. The load-slip curve, ultimate pull-out bearing capacity, crack development law of the UHPC layer and crack growth trend of the steel-UHPC interface were experimentally studied. The influence of the type of connector, the height of the steel dowel and the inclination angle of the steel dowel on the ultimate pull-out bearing capacity and failure mode of the specimens were compared by parameter analysis. The test results are compared with the finite element analysis results to verify the accuracy of the finite element model. A simplified calculation formula for the pull-out bearing capacity was proposed. The results showed that the failure modes of 16 specimens were the shear failure and axial tensile failure of the UHPC, both of which were ductile failures. The bearing capacity in the elastic stage and ultimate bearing capacity of the steel dowel connector with headed studs were higher than those of the steel dowel connector. After adding headed studs, the pull-out bearing capacity of the specimens could be increased by about 49% ∼ 84%. When the longitudinal steel bars were added to the bottom of the steel dowel connector with headed studs, the ductility in the loading stage and ultimate bearing capacity of the specimen could be improved. The steel dowel composite connector with headed studs with a steel dowel height of 100 mm and an inclination angle of 65° had better pull-out resistance.

Analytical modeling of nucleation and growth of graphene layers on CNT array and its application in field emission of electrons

Analytical modeling of nucleation and growth of graphene layers on CNT array and its application in field emission of electrons

Influence of Growth Process on Suppression of Surface Morphological Defects in 4H-SiC Homoepitaxial Layers

To address surface morphological defects that have a destructive effect on the epitaxial wafer from the aspect of 4H-SiC epitaxial growth, this study thoroughly examined many key factors that affect the density of defects in 4H-SiC epitaxial wafer, including the ratio of carbon to silicon, growth time, application of a buffer layer, hydrogen etching and other process parameters. Through systematic experimental verification and data analysis, it was verified that when the carbon–silicon ratio was accurately controlled at 0.72, the density of defects in the epitaxial wafer was the lowest, and its surface flatness showed the best state. In addition, it was found that the growth of the buffer layer under specific conditions could effectively reduce defects, especially surface morphology defects. This provides a new idea and method for improving the surface quality of epitaxial wafers. At the same time, we also studied the influence of hydrogen etching on the quality of epitaxial wafers. The experimental results show that proper hydrogen etching can optimize surface quality, but excessive etching may lead to the exposure of substrate defects. Therefore, it is necessary to carefully control the conditions of hydrogen etching in practical applications to avoid adverse effects. These findings have important guiding significance for optimizing the quality of epitaxial wafers.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Abstract Pulsed laser deposition (PLD) technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p-n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current-voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the color of the emitted light in these devices.

Fluoro-Ethylene-Carbonate Plays a Double-Edged Role on the Stability of Si Anode-Based Rechargeable Batteries During Cycling and Calendar Aging.

The energy storage density of Li-ion batteries can be improved by replacing graphite anodes with high-capacity Si-based materials, though instabilities have limited their implementation. Performance degradation mechanisms that occur in Si anodes can be divided into cycling stability (capacity retention after repeated battery cycles) and calendar aging (shelf life). While cycling instabilities and improvement strategies have been researched intensively, there is little known about the underlying mechanisms that cause calendar aging. In this work, multiple electron microscope techniques are used to explore the mechanism that governs calendar aging from the sub-nanometer-to-electrode scale. Plasma focused ion beam tomography is used to create 3D reconstructions of calendar aged electrodes and revealed the growth of a LiF-rich layer at the interface between the copper current collector and the silicon material, which can lead to delamination and increased interfacial impendence. The LiF layer appeared to derive from the fluoro-ethylene-carbonate electrolyte additive, which is commonly used to improve cycling stability in Si-based systems. The results reveal that additives necessary to improve cycling stability can cause performance degradation over the long-term during calendar aging. The results show that high performing, stable systems require careful design to simultaneously mitigate both cycling and calendar aging instabilities.

Corrosion Enhancement of PM Processed Magnesium by Turning Native Oxide on Mg Powders into Carbonates

In addition to its use as a lightweight material, pure magnesium is a promising candidate for prospective bioimplants considering its excellent biocompatible properties. Regardless of what Mg application is used, the ultimate goal is to improve magnesium's mechanical properties and degradation behaviour. Because of the high affinity for oxygen native oxide layer of gas-atomized powders is naturally formed in contact with the atmosphere. S/TEM investigation of the native oxide of the Mg powder particles revealed a nonhomogeneous nano-crystalline MgO layer. MgO is relatively soluble in water and does not provide sufficient corrosion protection. Among various surface treatment methods, conversion of the non-protective magnesium oxide to carbonate products is possible depending on the environmental conditions. This work used a simple experimental method using CO2 and water vapour to achieve surface carbonation of Mg powders. Two carbonated samples and pure magnesium were prepared by direct extrusion. The samples after carbonation retained good mechanical properties and the layer of carbonates had a significant impact on corrosion resistance. 1 day carbonation resulted in transformation of native oxide into amorphous layer and reduction of corrosion rate. Longer carbonation (10 days) revealed layer growth and transformation of native oxide to crystalline nesquehonite structure.

Evolution of 2-inch AlN single crystal grown on SiC seed via PVT method

The crystallization of aluminum nitride (AlN) hetero-epitaxial seeding on silicon carbide (SiC) by physical vapor transport (PVT), was systematically studied using XRD, UV–Vis, PL, SIMS, Raman and stress simulation. The evolution of crystal quality, transmittance, purity and residual stress of 2-inch AlN crystal in the growth process are described. The crystal quality of AlN growth layer gradually improves with the crystal thickness, as reflected in the decrease of XRD full width at half maximum (FWHM) from higher than 300 arcsec to 85 arcsec, SIMS yielded Si concentrations decreases from 1020 cm−3 to 1018 cm−3, absorbance coefficient @320 nm from 56 cm−1 to 9 cm−1, and simulated residual stress from 270 MPa to 50 MPa, indicating a comprehensively improved quality by simply increasing the crystal thickness of AlN crystal on SiC seed. Furthermore, a 2-inch crack-free AlN single crystal with high quality was successfully fabricated by inducing a layered structure.

Wake structure of an array of cylinders in shallow flow

Although there is a range of approaches for classifying the wake structure behind an array of obstacles, these approaches provide inconsistent results across different array systems. This motivates the present study to integrate and reconcile these approaches into one that is consistent across different systems. This new, transferable classification approach is based on the dimensionless flow blockage of the array and the wake stability parameter. To demonstrate this approach, a series of laboratory experiments was conducted to characterise the wake structure behind an array of emergent cylinders across a practically relevant parameter space that has not previously been explored. Two arrays with the same values of flow blockage and wake stability parameters but different sizes display the same wake structure, demonstrating the controlling influence of these two parameters on the wake structure. This approach classifies four different wake structures, which are distinct in that they display differences in instantaneous and time-averaged flow fields, temporal velocity oscillations, shear layer growth and the length of the steady wake region. The dependence of the wake structure on the two parameters is a consequence of (i) the controlling influence of blockage on the fraction of incident flow passing through the array and (ii) the ability of shallowness to suppress wake instabilities and, to a lesser extent, also influence the velocity through the array. This paper provides a predictive framework for the wake structure based on knowledge of the array geometry, and the depth and velocity of incident flow across the entire relevant practical parameter space.

Optimizing the chemical vapor deposition process of 4H–SiC epitaxial layer growth with machine-learning-assisted multiphysics simulations

This work addresses a novel technique for selecting the best process parameters for the 4H–SiC epitaxial layer in a horizontal hot-wall chemical vapor reactor using a transient multi-physical (thermal-fluid-chemical) simulation model and combined with a machine-learning model. An experiment was performed to validate the feasibility of the numerical model. Secondly, a single-factor analysis was conducted to investigate the effects of process parameters, including the deposition temperature, inlet-flow volume, rotational speed of the susceptor, and cavity pressure, on the quality of the 4H–SiC epitaxial layer. Finally, a machine learning algorithm, the ant colony optimization-back propagation neural network (ACO–BPNN), was employed to develop the input/output model and optimize process parameters for obtaining a high-quality epitaxial layer and reducing the optimization cycle and costs. Notably, the optimized process was validated by real experiments, where the error between calculation and experiment is 4.03 % for deposition rate and 0.49 % for coefficient of variation, respectively. The results highlight the model as reliable and lay the foundation for the CVD growth of the 4H–SiC epitaxial layer.

Selective aromatization of 1-hexene to BTX over core-shell structured Silicalite-1@ZSM-5 catalyst

The strong acidity on the external surface of ZSM-5 is a primary factor resulting in the low BTX selectivity and catalyst deactivation during the olefin aromatization. In this study, a membrane-restricted Silicalite-1@ZSM-5 core–shell structured catalytic catalyst was designed and constructed for 1-hexene aromatization using a hydrothermal coating method. TEM and NMR results confirmed the complete coverage of Silicalite-1 on the surface of ZSM-5, with a shell thickness of 50 nm. The further reaction of the TIPB (1,3,5-triisopropylbenzene) molecular probe reactions demonstrated the passivation of the acid sites on ZSM-5 external surface. The inert shell layer passivated the acid sites on the external surface, thereby suppressing the isomerization of PX and the side-chain alkylation reaction of light aromatics. Compared to ZSM-5, the Silicalite-1@ZSM-5 catalyst exhibited a 37.15 % increase in BTX selectivity, a 58.65 % increase in PX selectivity, significantly reduced coke deposition, and demonstrated better stability. This strategy of in-situ epitaxial growth of inert shell layers holds significant promise for enhancing the selectivity of shape-selective catalysts and extending catalyst lifetime.

Facet Dependence of the Oxygen Evolution Reaction on Co3O4, CoFe2O4, and Fe3O4 Epitaxial Film Electrocatalysts.

The main obstacle for the electrocatalytic production of "green hydrogen" is finding suitable electrocatalysts which operate highly efficiently over extended periods of time. The topic of this study is the oxygen evolution reaction (OER), one of the half-reactions of water splitting. It is complex and has intricate kinetics, which impairs the reaction efficiency. Transition metal oxides have shown potential as electrocatalysts for this reaction, but much remains unknown about the atomic scale processes. We have investigated structure-composition-reactivity correlations for Co3O4, CoFe2O4, and Fe3O4 epitaxial thin-film electrocatalysts exposing either the (001) or (111) surface facets. We found that for Co3O4, the (001) facet is more reactive, while for the other oxides, the (111) facet is more active. A Tafel-like evaluation reveals systematically smaller "Tafel" slopes for the (001) facets. Furthermore, the slopes are smaller for the iron-containing films. Additionally, we found that the oxyhydroxide skin layer which forms under OER reaction conditions is thicker on the cobalt oxides than on the other oxides, which we attribute to either a different density of surface defects or to iron hindering the growth of the skin layers. All studied skin layers were thinner than 1 nm.

Lattice Mismatch at the Heterojunction of Perovskite Solar Cells.

Lattice mismatch significantly influences microscopic transport in semiconducting devices, affecting interfacial charge behavior and device efficacy. This atomic-level disordering, often overlooked in previous research, is crucial for device efficiency and lifetime. Recent studies have highlighted emerging challenges related to lattice mismatch in perovskite solar cells, especially at heterojunctions, revealing issues like severe tensile stress, increased ion migration, and reduced carrier mobility. This review systematically discusses the effects of lattice mismatch on strain, material stability, and carrier dynamics. It also includes detailed characterizations of these phenomena and summarizes the current strategies including epitaxial growth and buffer layer, as well as explores future solutions to mitigate mismatch-induced issues. We also provide the challenges and prospects for lattice mismatch, aiming to enhance the efficiency and stability of perovskite solar cells, and contribute to renewable energy technology advancements.

Lattice Mismatch at the Heterojunction of Perovskite Solar Cells

Lattice mismatch significantly influences microscopic transport in semiconducting devices, affecting interfacial charge behavior and device efficacy. This atomic‐level disordering, often overlooked in previous research, is crucial for device efficiency and lifetime. Recent studies have highlighted emerging challenges related to lattice mismatch in perovskite solar cells, especially at heterojunctions, revealing issues like severe tensile stress, increased ion migration, and reduced carrier mobility. This review systematically discusses the effects of lattice mismatch on strain, material stability, and carrier dynamics. It also includes detailed characterizations of these phenomena and summarizes the current strategies including epitaxial growth and buffer layer, as well as explores future solutions to mitigate mismatch‐induced issues. We also provide the challenges and prospects for lattice mismatch, aiming to enhance the efficiency and stability of perovskite solar cells, and contribute to renewable energy technology advancements.

Peculiarities in XPS spectra of Sn/SiO2 layers as an effect of surface charge

X-ray photoelectron spectroscopy based on synchrotron radiation was used to investigate the composition of the observed SnO2-x/Sn:SiO2-x thin layer grown by organometallic chemical vapour deposition on single-crystalline silicon wafer with additional argon ions etching treatment. Due to the formation of a thermodynamic anomaly during in situ layer growth, an efficient oxygen exchange between silicon and tin oxide phases occurs. The present study addresses the effect of localized surface charging and its influence on the obtained XPS core level spectra. We found that due to the high electrical conductivity of metallic tin and the direct coupling of tin particles to the silicon wafer, the XPS Sn 3d5/2 core level spectrum is not affected by the surface charge compared to the highly charged dielectric silicon oxide matrix, as observed for the XPS O 1 s and Si 2p core level spectra. Our results show that the core level spectra of Si 2p and O 1 s are shifted up to 3 eV due to the presence of uncompensated positive charge on the surface of the silica matrix. These results provide insight into the influence of surface charge effects on the analysis of conductor/insulator composite materials and contribute to the application of Sn-based materials in various application concepts related to energy and surface functionalization.

Study of Nanostructured Layer Growth on Plasma-Facing Materials Irradiated with Helium Plasma

Tungsten and stainless steel samples were irradiated with stationary helium plasma in the plasma linear multicusp plasma device. The surface of the material is modified under the influence of helium plasma with the formation of nanostructures and microstructures on the surface. The fluence of helium ions equal to 8 × 1027 ions/m2 was achieved on the tungsten sample. Depending on the helium ion fluence, fuzzlike layers, loops, and bubbles of 20- to 500-nm scale were formed on the tungsten surface. The fuzz layer thickness depends on the duration of plasma irradiation in a wide range of fluence. Saturation of the growth of the thickness of the tungsten fuzz layer was observed at a fluence of more than 8 × 1026 ions/m2. The growth of microstructures and nanostructures on the surface of stainless steel irradiated with helium plasma was observed. The growth of nanostructured layers is explained by a theoretical model considering the dynamics of adatoms under the influence of plasma.

Frost accumulation in the non-hygroscopic rotary heat exchanger for heat recovery

In this paper, a process of frost accumulation inside the non-hygroscopic rotary heat exchanger depending on operating conditions is investigated. The study was based on the results of the numerical simulations conducted in the original computer program. The analysis considers both the threshold conditions of frost accumulation and the conditions of frost layer growth. For this purpose, three indicators related to frost accumulation were distinguished: a frost accumulation limit temperature, a surface of the matrix covered with the accumulated frost layer, a maximum thickness of the accumulated frost layer. The analyzes assessed the influence of operating parameters on these indicators, focusing on the return air relative humidity. It was revealed that the highest values of this parameter cause the greater thickness of the frost layer. However, the largest ‘frost’ accumulation area was created in the range of average return air relative humidity values – in the analyzed cases it was RH2i=38.5 %. The paper also includes a detailed analysis of the threshold temperature of frost accumulation. These limits of outdoor air temperature were determined for a wide range of operating parameters’ values: both airstream relative humidity and nominal temperature effectiveness. Additionally, eight probable configurations of active heat and mass transfer areas within rotary heat exchanger channels were revealed, which are related to the initiation of frost accumulation. Consequently, the locations of the initial ‘frost’ accumulation area were predicted. It was also found that the greatest impact on the frost accumulation threshold temperature has the return air relative humidity RH2i, although this influence is not unequivocal. The most unfavorable conditions regarding nominal temperature effectiveness in terms of frost accumulation are also unclear. In some cases, it was even demonstrated that an increase in the effectiveness can eliminate the ‘frost’ accumulation area.