Growth Of Layer Research Articles

Laminar Boundary Layer over a Serrated Backward-Facing Step

Laminar flow over a modified backward-facing step (BFS) was studied experimentally and computationally, with the results compared to a flight test on a Piper Cherokee wing. The BFS was modified with a serrated spanwise variation while maintaining a constant step height, and this modification is termed a serrated BFS (sBFS). A scaling law was proposed and then used to develop the experimental operation conditions. The experiments showed evidence that the transition to turbulence was delayed over the forward part of the serration (termed the valley). The boundary layer growth and characterization were used to validate the computational model, which was then used to examine details not available from the experiment, including the wall shear stress distribution and streamlines as they go over the sBFS. The wall shear stress showed the formation of low-shear diamonds downstream of the sBFS valley that were associated with laminar flow, which confirmed previous assumptions about the low-shear diamonds observed in the flight tests. The length of the low-shear diamonds was scaled with the sBFS geometry. Finally, the streamlines showed that the near-wall flow forward of the sBFS is pumped towards the sBFS peak, where it rapidly transitions to turbulence at that location.

Generative Convective Parametrization of a Dry Atmospheric Boundary Layer

AbstractTurbulence parametrizations will remain a necessary building block in kilometer‐scale Earth system models. In convective boundary layers, where the mean vertical gradients of conserved properties such as potential temperature and moisture are approximately zero, the standard ansatz which relates turbulent fluxes to mean vertical gradients via an eddy diffusivity has to be extended by mass‐flux parametrizations for the typically asymmetric up‐ and downdrafts in the atmospheric boundary layer. We present a parametrization for a dry and transiently growing convective boundary layer based on a generative adversarial network. The training and test data are obtained from three‐dimensional high‐resolution direct numerical simulations. The model incorporates the physics of self‐similar layer growth following from the classical mixed layer theory of Deardorff by a renormalization. This enhances the training data base of the generative machine learning algorithm and thus significantly improves the predicted statistics of the synthetically generated turbulence fields at different heights inside the boundary layer, above the surface layer. Differently to stochastic parametrizations, our model is able to predict the highly non‐Gaussian and transient statistics of buoyancy fluctuations, vertical velocity, and buoyancy flux at different heights thus also capturing the fastest thermals penetrating into the stabilized top region. The results of our generative algorithm agree with standard two‐equation mass‐flux schemes. The present parametrization provides additionally the granule‐type horizontal organization of the turbulent convection which cannot be obtained in any of the other model closures. Our proof of concept‐study also paves the way to efficient data‐driven convective parametrizations in other natural flows.

Comparison of Nitriding Behavior for Austenitic Stainless Steel 316Ti and Super Austenitic Stainless Steel 904L

In situ X-ray diffraction (XRD) was used to compare nitrogen low-energy ion implantation (LEII) into austenitic stainless steel 316Ti and super austenitic stainless steel 904L. While the diffusion and layer growth were very similar, as derived from the decreasing intensity of the substrate reflection, strong variations in the observed lattice expansion—as a function of orientation, the steel alloy, and nitriding temperature—were observed. Nevertheless, a similar resulting nitrogen content was measured using time-of-flight secondary ion mass spectrometry (ToF-SIMS). Furthermore, for some conditions, the formation of a double layer with two distinct lattice expansions was observed, especially for steel 904L. Regarding the stability of expanded austenite, 316Ti had already decayed in CrN during nitriding at 500 °C, while no such effect was observed for 904L. Thus, the alloy composition has a strong influence only on the lattice expansion and the stability of expanded austenite—but not the diffusion and nitrogen content.

The Effect of Al2O3 on the Performance of Perovskite Solar Cells

Improving the power conversion efficiency (PCE) and stability of perovskite solar cells (PSCs) remain the two most important goals of perovskite research. Herein, the effects of Al2O3 interlayer on the performance of formamidinium‐cesiums and “triple cation” PSCs by depositing a thin Al2O3 layer via atomic layer deposition on different interfaces are analyzed. It is found that it can efficiently serve as a passivation layer of perovskite absorber, as a seed layer for the compact growth of the subsequent SnO2 layer, or as a capping layer to the whole cell in the superstrate configuration to prevent moisture ingress. The optimized devices utilizing Al2O3 have on average more than 1% absolute higher PCE, with reduced penetration of moisture inside the device. Especially, the capping layer has shown the greatest benefit, extending the stability of the devices by more than two times and allowing long‐term operation without encapsulation. In the best case, a T80 time of almost 900 h under day/night‐cycling illumination is obtained. The observed trends are based on data from a large number of devices (more than 300 devices were tested in the maximum power point), which give statistical relevance to the promising results.

Multifunctional nanofiber membrane with antifouling properties for efficient seawater desalination and wastewater purification

Solar-driven water evaporation has attracted widespread attention for its extensive applications in the production of clean water from seawater and wastewater. However, most of the designed evaporators focus on evaporation performance but ignore the antifouling ability, particularly the evaporator used for wastewater treatment. Herein, a cellulose acetate (CA)/polyaniline (PANI)/copper sulfide (CuS) nanofiber membrane with a core-shell structure was designed as an evaporator. The super-hydrophilic CA nanofiber membrane was obtained by deacetylation, which could provide sufficient water for water evaporation. Meanwhile, the in situ polymerization of PANI on CA nanofiber facilitates the growth of a uniform CuS layer on the fibers. Consequently, the synergistic effect between PANI and CuS not only improved the light absorption and photothermal conversion ability but also enhanced the photocatalytic ability of composite membranes. The d-CA/PANI/CuS evaporator exhibited a high evaporation rate of 1.45 kg m−2 h−1 under one solar radiation. Due to the excellent photocatalytic self-cleaning ability, the average evaporation rate of d-CA/PANI/CuS nanofiber membrane for methylene blue (MB) solution remained at 1.42 kg m−2 h−1 in a long-term evaporation experiment. This work may shine a new light on the design of novel antifouling evaporators with photocatalytic self-cleaning capability for seawater desalination and wastewater treatment.

Controlled growth of uniform and dense perovskite layers on SnO2 via interface passivation by PbS quantum dots

AbstractFormamidinium lead iodide (FAPbI3) and SnO2 are a promising pair of halide perovskite and electron transport layer (ETL). However, FAPbI3 and SnO2 have inherent problems such as high crystallization temperature of FAPbI3 and surface defects of SnO2 like oxygen vacancies. They cause low crystallinity, non‐uniform grain growth, and more interface defects, leading to carrier recombination and leakage current. The passivation of the interface between FAPbI3 and SnO2 is an effective process to address these materials issues. Herein, a dual role of lead sulfide (PbS) quantum dots (QDs) in the interface passivation is explored. PbS QDs which are introduced to the interface between FAPbI3 and ETL, link to Sn‐dangling bonds of SnO2 ETLs and anchor the iodine atoms of FAPbI3. This changes considerably lower nonradiative recombination, achieve a better energetic alignment between ETL and PbI3, and facilitate electron extraction, leading to a power conversion efficiency of 21.66%.image

A self‐assembled tannic acid‐modified Zn‐Al LDH supported Mg(OH)2 nanofiller for the preparation of bisphenol A based poly(amide‐imide) nanocomposites

AbstractA multifunctional organic‐inorganic nanofiller as a reinforcement of bisphenol A based poly(amide‐imide) (BPAI) was assembled through the formation of electrostatic forces between tannic acid (TA)‐modified Zn‐Al LDH and Mg(OH)2 nanoparticles (MDH). TA‐modified MDH@Zn‐Al LDH (TML) was fabricated using an in‐situ, one‐step co‐precipitation method. This involved the growth of LDH layers in the TA/MDH suspension. The manner of surface modification and the placement of MDH along with LDH in the TML structure were confirmed using FTIR, XRD, FE‐SEM, and TGA. The results exhibited that the modification has resulted in an intercalated structure with increased interlayer spacing of LDH. The Poly(amide‐imide) nanocomposites were prepared by reinforcing BPAI with TML using the solution casting method. The best thermal stability of the nanocomposites, in both air and N2 atmospheres, appeared in the sample with 2 wt% TML content. The T10 and Tmax values of this sample in the air atmosphere were found to be 45 and 37°C higher, respectively, than those of BPAI. Comparative to neat BPAI, the THR and HRC values of the mentioned sample were reduced by 43.6% and 45.7%, respectively. These results demonstrated the significant synergistic effect of the TML structure in enhancing the thermal and combustion resistance of BPAI.Highlights Preparation of LDH on a Mg(OH)2/tannic acid as multifunctional nanofiller. Self‐assembling nanofiller including tannic acid‐modified LDH‐supported MDH. A synthesized bisphenol A based poly(amide‐imide) (BPAI). Effect of the nanofiller on the thermal and combustion resistance of BPAI.

Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Pulsed laser deposition technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p–n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current–voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the colour of the emitted light in these devices.

Effect of gas pre-decomposition device on the growth of GaN epitaxial layer

In previous studies, the influence of gas phase and surface reactions on the growth of GaN was mainly calculated through simulations. In this study, a novel gas pre-decomposition device (GPDD) was designed to experimentally investigate the effects of gas phase and surface reactions on GaN growth by changing the length and height of the isolation plates (IPs). By varying the structure of the GPDD, the effects on the growth rate and thickness uniformity of the GaN films were studied. The growth rate of the GaN sample slowed with the extension of the IPs because the longer partition plates led to insufficient gas mixing and premature consumption of the precursor trimethylgallium (TMG). The use of GPDD simultaneously achieves high crystal quality and smooth surface morphology of the GaN film. Owing to the use of GPDD, the decomposition of TMG in the pyrolysis pathway was promoted, which suppressed Ga vacancies and C impurities, resulting in weak yellow luminescence bands in the photoluminescence. This study provides a comprehensive understanding of the chemical reaction mechanism of GaN and plays an important role in promoting the development of metal-organic chemical vapor deposition equipment.

Influence of Carbon Source on the Buffer Layer for 4H-SiC Homoepitaxial Growth.

In this study, we systematically explore the impact of C/Si ratio, pre-carbonization time, H2 etching time, and growth pressure on the buffer layer and subsequent epitaxial layer of 6-inch 4H-SiC wafers. Our findings indicate that the buffer layer's C/Si ratio and growth pressure significantly influence the overall quality of the epitaxial wafer. Specifically, an optimal C/Si ratio of 0.5 and a growth pressure of 70 Torr yield higher-quality epitaxial layers. Additionally, the pre-carbonization time and H2 etching time primarily affect the uniformity and surface quality of the epitaxial wafer, with a pre-carbonization time of 3 s and an H2 etching time of 3 min found to enhance the surface quality of the epitaxial layer.

Tuning of interface quality of Al/CeO2/Si device by post-annealing of sol-gel grown high-k CeO2 layers

A comprehensive study has been done on the influence of post-deposition annealing temperature on high-k cerium oxide (CeO2) layer grown on n-type silicon (Si) substrate and its resultant interface states have been studied for Al/CeO2/Si metal-oxide-semiconductor (MOS) devices. The high-k CeO2 thin films were deposited by spin-coating and sintered at different annealing temperatures (Ta) in the range of 400–900 °C. The parameters such as fixed charge density (Qeff), dielectric constant (k) of the layers, flat-band voltage (VFB), interface defect density (Dit), etc., of the MOS device were evaluated from CV and I-V measurements. A minimum value of flat band shift (∼0.05 V) with lower Qeff (−4.81 × 1011 C/cm2) have been achieved for the Ta of 600 °C. The k and Dit were evaluated to be 22 and 1.29 × 1012 cm−2, respectively at the Ta of 600 °C. In addition, the CV measurements showed a very small hysteresis and very low frequency dispersion for the Ta of 600 °C sample. Energy distribution of defect states was evaluated and it was maximum towards the bottom of the conduction band. This shows that the 600 °C is the optimum annealing temperature, which results in high quality interface, and the electron affinity of the corresponding CeO2 layers was found to be 3.29 eV as evaluated from ultraviolet photoelectron spectroscopy (UPS). Further, a maximum value of minority carrier lifetime (147 μs) has been achieved for the samples annealed at Ta of 400 °C, indicating that the post-annealing temperature plays a significant role on the properties of CeO2 films deposited by sol-gel process. Thus, the present study demonstrates the possibility of sol-gel grown high k-CeO2 layers suitable for MOS like devices.

Effect of Growth Temperature on Strain during Growth and Crack Suppression in AlGaN Templates on Sapphire Substrates for Deep Ultraviolet Light‐Emitting Diodes

The crack formations in AlGaN templates for deep ultraviolet (DUV) light‐emitting diodes (LEDs) are investigated and successfully suppressed. The strain values in AlGaN thick layers on sapphire substrates by in situ wafer curvature measurements and ex situ X‐ray diffraction measurements are evaluated. It is found that the tensile strain during the AlGaN thick layer growth comes from a thermal expansion difference between the AlGaN thick layer and the sapphire substrate as the temperature changes from the AlN nucleation layer growth to the AlGaN thick layer growth. When the temperature change is 100 °C and less, the tensile strain of 0.1% and less is observed during the AlGaN thick layer growth, resulting in no crack formations in the AlGaN thick layer. Furthermore, a DUV LED layer structure grown on such a crack‐free AlGaN template shows no crack formations. Thus, to suppress crack formation in templates fabricated for DUV LEDs, their growth temperature must be optimized by considering thermal expansions caused by the changes in the growth temperature from the nucleation layer to the thick layer.

Temperature dependence mechanism of high-temperature oxidation of transition metal silicide MoSi2

Transition metal silicides represented by MoSi2 have excellent oxidation resistance and are widely used as high-temperature anti-oxidation coatings in hot end components of power equipment. However, the mechanism of temperature-dependent growth of MoSi2 oxidation products has not been revealed. Therefore, this study investigated the formation characteristics of oxide film and silicide-poor compound on MoSi2 at temperatures of 1000 °C–1550 °C through high-temperature oxidation experiments, combined with microscopic Raman spectroscopy, scanning electron microscope, and x-ray diffraction (XRD) characterizations. The result showed that MoSi2 underwent high-temperature selective oxidation reactions at 1000 °C–1200 °C, forming MoO2 and SiO2 oxide film on the substrate. As the oxidation temperature increased to 1550 °C, after 100 h of oxidation, along with the disappearance of MoO2 and the phase transformation of SiO2, a continuous Mo5Si3 layer with a thickness of approximately 47 μm was formed at the SiO2–MoSi2 interface. Thermodynamics and kinetic calculations further revealed the mechanism of temperature-dependent growth of oxidation products (MoO2 and Mo5Si3) during high-temperature oxidation process of MoSi2. As the temperature increased, the diffusion flux ratio of O and Si decreased, leading to a decrease in oxygen concentration at the interface and promoting the growth of the Mo5Si3 layer. Its thickness is an important indicator for evaluating the oxidation resistance of MoSi2 coatings during service. This study provides experimental and mechanistic insights into the temperature-dependent growth behavior of Mo5Si3 during the high-temperature oxidation of MoSi2 coating, and provides guidance for predicting the service life and improving the oxidation resistance of silicide coatings.

In Situ Growth of Nickel Oxide Hole-Transport Layer through the Nickel Oleate Route for High-Performance Perovskite Solar Cells

In Situ Growth of Nickel Oxide Hole-Transport Layer through the Nickel Oleate Route for High-Performance Perovskite Solar Cells

Comparative Study of Multilayer Hard Coatings Deposited on WC-Co Hardmetals

This paper examines the impact of a multilayered gradient coating, applied via plasma-activated chemical vapor deposition (PACVD), on the structural and mechanical attributes of nanostructured WC-Co cemented carbides. WC-Co samples containing 5 and 15 wt.% Co were synthesized through a hot isostatic pressing (HIP) process using nanoparticle powders and coated with two distinct multilayer coatings: titanium nitride (TiN) and titanium carbonitride (TiCN). Nanosized grain formation without microstructural defects of the substrates, prior to coating, was confirmed by magnetic saturation and coercivity testing, microstructural analysis, and field emission scanning electron microscope (FESEM). Nanoindentation, fracture toughness and hardness testing were conducted for uncoated samples. After coatings deposition, characterizations including microscopy, surface roughness determination, adhesion testing, coating thickness measurement, and microhardness examination were conducted. The impact of deposited coatings on wear resistance of produced hardmetals was analyzed via scratch test and dry sliding wear test. Samples with higher Co content exhibited improved adhesion, facilitating surface cleaning and activation before coating. TiN and TiCN coatings demonstrated similar roughness on substrates of identical composition, suggesting Co content’s minimal influence on layer growth. Results of the mechanical tests showed higher microhardness, higher elastic modulus, better adhesion, and overall superior tribological properties of the TiCN coating.

Serpulidae from the Albian–Cenomanian (Cretaceous) of Mexico

Two serpulid species, Protula? antiquata? and Propomatoceros? sp., are recorded from the Morelos Formation (mid-Cretaceous) in Mexico. Serpulid tube structure is microcrystalline; the examined tubes are slightly diagenetically altered, but growth layers are well preserved. The short, straight growth layers with slightly curved distal ends in Protula? antiquata? occur also in some other serpulids such as the genus Josephella. The Mexican serpulid tubes are of a calcitic composition. The diversity of the present serpulid association is low for shallow tropical seas of the Cretaceous in comparison to rich assemblages recorded from Europe. The low diversity presumably results from some local environmental conditions such as rapid sedimentation and low nutrient content of sea water.

Roll bonding characteristics of the Mg/Zn/Cu/Al multilayered composite produced by the ARB process

In this study, the effect of heat treatment on the laminated Mg/Zn/Cu/Al composite produced by accumulative roll bonding (ARB) was investigated. For this purpose, interfacial microstructural formed during the heat treatment were investigated. The results showed that with increase in both temperature and time, the diffusion layers (DLs) grew. The brass, (Al,Cu), and (Mg,Zn) layers created that is related to the diffusion and interface migration. The growth of the brass layer was diffusion controlled and the growth of the (Al,Cu), and (Mg,Zn) layers were mixed controlled. In both of them, chemical compositions were changed and new phases created as DLs.

Atomic Layer Deposition Growth and Characterization of Al2O3 Layers on Cu-Supported CVD Graphene

The deposition of thin uniform dielectric layers on graphene is important for its successful integration into electronic devices. We report on the atomic layer deposition (ALD) of Al2O3 nanofilms onto graphene grown by chemical vapor deposition onto copper foil. A pretreatment with deionized water (DI H2O) for graphene functionalization was carried out, and, subsequently, trimethylaluminum and DI H2O were used as precursors for the Al2O3 deposition process. The proper temperature regime for this process was adjusted by means of the ALD temperature window for Al2O3 deposition onto a Si substrate. The obtained Al2O3/graphene heterostructures were characterized by Raman and X-ray photoelectron spectroscopy, ellipsometry and atomic force and scanning electron microscopy. Samples of these heterostructures were transferred onto glass substrates by standard methods, with the Al2O3 coating serving as a protective layer during the transfer. Raman monitoring at every stage of the sample preparation and after the transfer enabled us to characterize the influence of the Al2O3 coating on the graphene film.

Tailored high-temperature corrosion behavior of Cr coatings using high power impulse magnetron sputtering on ZIRLO alloys for accident-tolerant fuel application

To further enhance the oxidation resistance of Zirconium alloys during Loss of Coolant Accident (LOCA), protective Cr coatings were deposited in synchronized pulse bias mode through high power impulse magnetron sputtering (HiPIMS). The results showed the weight gain of the Cr coatings with synchronized pulse bias was reduced by approximately 61.7 % compared to that of the Cr coatings without synchronized pulse bias after 90 min of steam oxidation at 1200 °C. This was mainly attributed to the formed intense (200) preferred orientation of the Cr coatings with synchronized pulse bias during deposition, accelerating the recrystallization growth of the residual Cr layer in a high-temperature steam environment, thereby reducing the rapid diffusion pathways for oxygen. Moreover, the synchronized pulse bias induced Cr grains refinement, favoring the formation of a more compact Cr2O3 scale, and therefore efficiently inhibiting the diffusion of external oxygen to the underlying alloy.

Experimental research on pull-out behavior of steel-UHPC composite beams with new composite dowels connectors

In order to study a new type of steel-UHPC composite connector, a total of 16 steel-UHPC composite connectors with steel dowels and studs and steel-UHPC composite connectors with steel dowels without studs were designed and manufactured, and the pull-out test, finite element simulation and theoretical analysis were carried out. The load-slip curve, ultimate pull-out bearing capacity, crack development law of the UHPC layer and crack growth trend of the steel-UHPC interface were experimentally studied. The influence of the type of connector, the height of the steel dowel and the inclination angle of the steel dowel on the ultimate pull-out bearing capacity and failure mode of the specimens were compared by parameter analysis. The test results are compared with the finite element analysis results to verify the accuracy of the finite element model. A simplified calculation formula for the pull-out bearing capacity was proposed. The results showed that the failure modes of 16 specimens were the shear failure and axial tensile failure of the UHPC, both of which were ductile failures. The bearing capacity in the elastic stage and ultimate bearing capacity of the steel dowel connector with headed studs were higher than those of the steel dowel connector. After adding headed studs, the pull-out bearing capacity of the specimens could be increased by about 49% ∼ 84%. When the longitudinal steel bars were added to the bottom of the steel dowel connector with headed studs, the ductility in the loading stage and ultimate bearing capacity of the specimen could be improved. The steel dowel composite connector with headed studs with a steel dowel height of 100 mm and an inclination angle of 65° had better pull-out resistance.