Ultraviolet electroluminescence with electrically tunable colour from epitaxial n-(0001)ZnO/p-(0001)GaN light-emitting diodes

Abstract

Abstract Pulsed laser deposition (PLD) technique is used to grow unintentionally n-type (0001)ZnO layers with high crystalline and morphological qualities on p-type (0001)GaN/sapphire templates. Electroluminescent devices are fabricated on these p-n heterojunctions. Oxygen pressure during growth has been found to influence strongly the crystalline and defect properties of the grown layers, which affect not only the current-voltage characteristics but also the emission properties of the electroluminescent devices. It has been observed that the electroluminescence (EL) spectra have both defects related visible and band-edge related ultraviolet (UV) transition features stemming from both GaN and ZnO sides. The study reveals that UV to visible EL intensity ratio maximizes at an optimum oxygen pressure. The relative contribution of EL originating from ZnO and GaN sides can be tuned by the applied bias, as the bias can control the depletion width and hence the carrier interdiffusion across the junction. This finding thus offers a scope to electrically tune the color of the emitted light in these devices.