Antiferromagnetic antiperovskites, where magnetically active $3d$ metal cations are placed in the octahedral corners of a perovskite structure, are in the spotlight due to their intertwined magnetic structure and topological properties. Especially their anomalous Hall conductivity, which can be controlled by applied strain and/or electric field, makes them highly attractive in different electronic applications. Here, we present the study and theoretical understanding of an antiperovskite compound that can offer enormous opportunities in a broad set of applications. Using first-principles calculations, we investigated the structure, lattice dynamics, noncollinear magnetic ordering, and electronic behavior in the vanadium-based antiperovskite ${\mathrm{V}}_{3}\mathrm{AuN}$. We found an antiperovskite structure centered on N similar to the ${\mathrm{Mn}}_{3}A\mathrm{N}$ family as the structural ground state. In such a phase, a $Pm\overline{3}m$ ground state was found in contrast to the Cmcm post-antiperovskite layered structure, as in the ${\mathrm{V}}_{3}A\mathrm{N}$, $A=\mathrm{Ga}$, Ge, As, and P. We studied the lattice dynamics and electronic properties, demonstrating its vibrational stability in the cubic structure and a chiral antiferromagnetic noncollinear ordering as a magnetic ground state. Finally, we found that the anomalous Hall conductivity, associated with the topological features induced by the magnetic symmetry, is ${\ensuremath{\sigma}}_{xy}=\ensuremath{-}291\phantom{\rule{4pt}{0ex}}\mathrm{S}\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1}$ $({\ensuremath{\sigma}}_{111}=\ensuremath{-}504\phantom{\rule{4pt}{0ex}}\mathrm{S}\phantom{\rule{0.16em}{0ex}}{\mathrm{cm}}^{\ensuremath{-}1})$. The latter is the largest reported in the antiferromagnetic antiperovskite family of compounds.