A general theory is developed for dynamical X-ray diffraction in a crystal on the surface of which a lateral periodic structure of thin-film lines (strips) of another material is formed. On the basis of the model of edge forces, the fields of elastic lattice displacements in the substrate are calculated that arise as a result of formation of a lateral surface grating (SG). With the use of the formalism of diffraction of spatially restricted X-ray beams, solutions are obtained for the amplitudes of X-ray waves reflected from a crystal with an SG whose chemical composition differs from the composition of the substrate. A numerical simulation is carried out of X-ray diffraction in a silicon substrate with SGs of tungsten and SiO2 oxide. It is shown that the angular distributions of the scattering intensity by a silicon crystal with tungsten and oxide lines of identical size differ significantly, and the physical nature of such difference is established.