Graphene Nanoribbon Devices Research Articles

Driving interference control by side carbon chains in molecular and two-dimensional nano-constrictions.

The quantum interference effect offers a unique route to control the charge transport through nanoscale constrictions. The carbon atomic chain, which is an sp-hybridized carbon allotrope, has recently stimulated interest to construct ultimate nano-devices. Instead of using the carbon atomic chain as an electron transmitting channel interconnecting nano-components, we explore the possibility of using side carbon chains to change the phase of the transmitting electrons and influence the interference pattern of the nano-device. Interference pattern modulation is a general phenomenon which is demonstrated in a benzene molecular device, a zigzag graphene nanoribbon device and a SiC nanoribbon device. Odd-even oscillation dependence of the conductance on the length of the side carbon chain is found. Two criteria, i.e. large magnitude of the local state in the side carbon chain and proper length of the side carbon chain, must be satisfied simultaneously to achieve effective interference modulation. By carefully choosing the position and length of the side carbon chains, the transmission zero can be moved to the Fermi energy. Moreover, the transmission zero induced by destructive interference at the Fermi energy can be very robust against strain. This work provides a new possibility to construct nano-devices with carbon atomic chains.

Highly Stable Persistent Photoconductivity with Suspended Graphene Nanoribbons

Graphene nanoribbon (GNR), also known as 1-dimensional graphene, with a non-zero band gap has a huge potential for various electrical and optoelectrical applications because of its high transparency, flexibility, controllable band gap, and unique edge states. Recent advances in the synthesis of GNR enable us to show the possibility of GNRs as future high performance electrical devices. However, the applicability of GNRs to optoelectrical devices is unclear. Here we report that suspended GNR devices can show persistent photoconductivity (PPC) with long decay time (over 72 h) and adequate environmental stability. Repeated non-volatile memory operation is also demonstrated with an integrated PPC device using GNRs. This very stable PPC device can be applied to a wide variety of fields such as ultra-low-power non-volatile memory, nanoscale imaging, and biological sensors. Our results have opened the door to advance the study of GNRs in novel directions such as optoelectrical applications.

Exploration of channel width scaling and edge states in transition metal dichalcogenides

We explore the impact of edge states in three types of transition metal dichalcogenides (TMDs), namely metallic Td-phase WTe2 and semiconducting 2H-phase MoTe2 and MoS2, by patterning thin flakes into ribbons with varying channel widths. No obvious charge depletion at the edges is observed for any of these three materials, in contrast to observations made for graphene nanoribbon devices. The semiconducting ribbons are characterized in a three-terminal field-effect transistor (FET) geometry. In addition, two ribbon array designs have been carefully investigated and found to exhibit current levels higher than those observed for conventional one-channel devices. Our results suggest that device structures incorporating a high number of edges can improve the performance of TMD FETs. This improvement is attributed to a higher local electric field, resulting from the edges, increasing the effective number of charge carriers, and the absence of any detrimental edge-related scattering.

Magnetic adatoms in two and four terminal graphene nanoribbons: A comparison between their spin polarized transport

We study the charge and spin transport in two and four terminal graphene nanoribbons (GNR) decorated with random distribution of magnetic adatoms. The inclusion of the magnetic adatoms generates only the z-component of the spin polarized conductance via an exchange bias in the absence of Rashba spin-orbit interaction (SOI), while in presence of Rashba SOI, one is able to create all the three (x, y and z) components. This has important consequences for possible spintronic applications. The charge conductance shows interesting behaviour near the zero of the Fermi energy. Where in presence of magnetic adatoms the familiar plateau at 2e2/h vanishes, thereby transforming a quantum spin Hall insulating phase to an ordinary insulator. The local charge current and the local spin current provide an intuitive idea on the conductance features of the system. We found that, the local charge current is independent of Rashba SOI, while the three components of the local spin currents are sensitive to Rashba SOI. Moreover the fluctuations of the spin polarized conductance are found to be useful quantities as they show specific trends, that is, they enhance with increasing adatom densities. A two terminal GNR device seems to be better suited for possible spintronic applications.

Fano Resonance Effect in CO-Adsorbed Zigzag Graphene Nanoribbons**Supported by the National Natural Science Foundation of China under Grant No 21673296, the Science and technology Plan of Hunan Province under Grant No 2015RS4002, and the Hunan Provincial Natural Science Foundation under Grant No 2017JJ3063.

Quantum interference plays an important role in tuning the transport property of nano-devices. Using the non-equilibrium Green’s Function method in combination with density functional theory, we investigate the influence to the transport property of a CO molecule adsorbed on one edge of a zigzag graphene nanoribbon device. Our results show that the CO molecule-adsorbed zigzag graphene nanoribbon devices can exhibit the Fano resonance phenomenon. Moreover, the distance between CO molecules and zigzag graphene nanoribbons is closely related to the energy sites of the Fano resonance. Our theoretical analyses indicate that the Fano resonance would be attributed to the interaction between CO molecules and the edge of the zigzag graphene nanoribbon device, which results in the localization of electrons and significantly changes the transmission spectrum.

A magnetic phase-transition graphene transistor with tunable spin polarization

Graphene nanoribbons (GNRs) have been proposed as potential building blocks for field effect transistor (FET) devices due to their quantum confinement bandgap. Here, we propose a novel GNR device concept, enabling the control of both charge and spin signals, integrated within the simplest three-terminal device configuration. In a conventional FET device, a gate electrode is employed to tune the Fermi level of the system in and out of a static bandgap. By contrast, in the switching mechanism proposed here, the applied gate voltage can dynamically open and close an interaction gap, with only a minor shift of the Fermi level. Furthermore, the strong interplay of the band structure and edge spin configuration in zigzag ribbons enables such transistors to carry spin polarized current without employing an external magnetic field or ferromagnetic contacts. Using an experimentally validated theoretical model, we show that such transistors can switch at low voltages and high speed, and the spin polarization of the current can be tuned from 0% to 50% by using the same back gate electrode. Furthermore, such devices are expected to be robust against edge irregularities and can operate at room temperature. Controlling both charge and spin signal within the simplest FET device configuration could open up new routes in data processing with graphene based devices.

Computational exploration and design of nano scale sensors and devices

We describe large-scale ab initio simulations of nanoscale sensors and transistors, which can predict the best-performing structures. In the sensors part we focus on mechanisms of detection of small molecules: ammonia, nitrogen dioxide, glucose and ethylene by nanotube-based sensors, and on a novel nano circuit involving a nanotube functionalized with a fragment of polymerase I enzyme. The nano circuit monitors replication of a single-stranded DNA and can potentially be used to sequence DNA by detecting electrical signatures of the adding bases. We discuss modifications that should enable reliable distinction between some of the bases, and our work towards complete sequencing. We also describe computational optimization of graphene nanoribbon (GNR) structures and devices, including the determination of atomically precise polymer-GNR conversion mechanism due hole injection, the design of realistic, experimentally realizable negative differential resistance device based on 7-GNR, and optimization of transistor structures consisting of a GNR channel, BN insulating layers and an Al gate.

Novel Strategy of Edge Saturation Hamiltonian for Graphene Nanoribbon Devices

Tight-binding (TB) Hamiltonian is widely used in the simulations of many low-dimensional devices, such as graphene nanoribbon (GNR)-based FETs, and usually, it is an empirical parameterized matrix. In this paper, we propose a novel strategy to construct the edge TB parameters of armchair GNR (a-GNR) under different edge saturations. Different from the traditional way’s only edge bonds analysis, this method also considers the diversity of three a-GNR families and the saturation atoms impact on the subedge bonds. The effects of several common elements or groups on the edge of GNRs are studied numerically and among them, hydrogen (H), fluorine (F), and hydroxyl group (OH) show better saturation properties. Through elaborate verifications of these three types of saturations, the TB fitting errors of the proposed new strategy are drastically reduced, in comparison with the traditional parameters. These verifications, which are subjected to the ab initio results, go from an energy-band level to a device-performance level. Simulation results also show that saturated by different atoms, the band structure of GNR obviously varies. Thus, edge saturation can be another effective method of tuning GNR device properties, such as bandgap, current on/off ratio, and carrier mobility.

Molecular Dynamics Study on Nanoelectromechanical Graphene Nanoribbon Device with Graphene Nanoflake Shuttle

Molecular Dynamics Study on Nanoelectromechanical Graphene Nanoribbon Device with Graphene Nanoflake Shuttle

Spin polarization current induced by hydrogen hybrid within closed hexagon graphene nanoribbon devices

We investigate the spin-polarized electronic transport properties of the closed hexagon graphene nanoribbon devices with different hydrogen hybrid of edge carbon atoms by using non-equilibrium Green’s functions in combination with the density functional theory. The results show that an excellent molecular switching with on/off ratio over 106, perfect spin-filtering effect and negative differential resistance effect have been observed. A detailed analysis has been presented.

Millimeter-scale gate-tunable graphene nanoribbon devices as a platform for mid-infrared and bio sensing applications

The experimental observation of graphene plasmon resonance has generated tremendous interest due to numerous potential applications such as photosensors, detectors, biosensors, and switches from THz to mid-infrared regime. However, practical applications require much larger dimensions (mm to cm scale) than that demonstrated in the proof-of-concept devices. Moreover, such devices also require a detailed understanding of ribbon-to-ribbon interaction, which has not been investigated so far. Here we demonstrate gate tunable plasmon resonance in the mid-infrared spectral region on millimeter-scale graphene nanoribbon (GNR) array devices fabricated using graphene monolayer. Gate dependent Fourier-transform infrared (FTIR) transmission measurements on GNR of various widths were investigated experimentally. The shift in plasmon resonance peaks of wave number 100cm−1 at applied external gate voltage −100V was observed. This shift is attributed to strong gate modulation. Our investigation of ribbon-to-ribbon interaction by tuning the aspect ratio reveals strong modulation of surface plasmon resonance peaks in GNR. This suggests that plasmon resonances are coupled as evidenced by blue-shifted plasmon resonance. These studies demonstrate that large-area GNR devices can serve as an ideal platform for ultrasensitive sensing and detector applications.

Effect of substitutional impurities on the electronic transport properties of graphene

Density-functional theory in combination with the nonequilibrium Green's function formalism is used to study the effect of substitutional doping on the electronic transport properties of hydrogen passivated zig-zag graphene nanoribbon devices. B, N and Si atoms are used to substitute carbon atoms located at the center or at the edge of the sample. We found that Si-doping results in better electronic transport as compared to the other substitutions. The transmission spectrum also depends on the location of the substitutional dopants: for single atom doping the largest transmission is obtained for edge substitutions, whereas substitutions in the middle of the sample give larger transmission for double carbon substitutions. The obtained results are explained in terms of electron localization in the system due to the presence of impurities.

Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward GNR devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ∼10 nm via atmospheric pressure chemical vapor deposition. In this work, the growth of GNRs on Ge(001) is extended to ultra-high vacuum conditions, resulting in the realization of GNRs with widths narrower than 5 nm. Armchair graphene nanoribbons oriented along Ge 〈110〉 surface directions are achieved with excellent width control and relatively large bandgaps. The bandgap magnitude and electronic uniformity of these sub-5 nm GNRs are well-suited for emerging nanoelectronic applications.

Graphene nanoribbons epitaxy on boron nitride

In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ∼15 nm to ∼150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ∼20 000 cm2 V−1 s−1 for ∼100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ∼15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

Efficient spin-filter and negative differential resistance behaviors in FeN4 embedded graphene nanoribbon device

In this paper, we propose a new device of spintronics by embedding two FeN4 molecules into armchair graphene nanoribbon and sandwiching them between N-doped graphene nanoribbon electrodes. Our first-principle quantum transport calculations show that the device is a perfect spin filter with high spin-polarizations both in parallel configuration (PC) and antiparallel configuration (APC). Moreover, negative differential resistance phenomena are obtained for the spin-down current in PC, and the spin-up and spin-down currents in APC. These transport properties are explained by the bias-dependent evolution of molecular orbitals and the transmission spectra.

Spin-filter and negative differential resistance effect in zigzag-edged bilayer graphene nanoribbon devices

By performing first-principle quantum transport calculation, the spin-dependent transport properties of zigzag-edged bilayer graphene nanoribbon based devices are investigated. There are four kinds of structures with different stacking sequences and treatment of dangling bonds considered in our work. It is shown that the devices are perfect spin-filters with extremely large spin polarization as well as substantial negative differential resistance effects, which are affected by the stacking sequences and edge structures. All these phenomena can be explained by the spin-resolved local density of states and the tranmission spectra.

Negative differential resistance and rectifying performance induced by doped graphene nanoribbons p–n device

Employing nonequilibrium Green's Functions in combination with density functional theory, the electronic transport properties of armchair graphene nanoribbon (GNR) devices with various widths are investigated in this work. In the adopted model, two semi-infinite graphene electrodes are periodically doped with boron or nitrogen atoms. Our calculations reveal that these devices have a striking nonlinear feature and show notable negative differential resistance (NDR). The results also indicate the diode-like properties are reserved and the rectification ratios are high. It is found the electronic transport properties are strongly dependent on the width of doped nanoribbons and the positions of dopants and three distinct families are elucidated for the current armchair GNR devices. The NDR as well as rectifying properties can be well explained by the variation of transmission spectra and the relative shift of discrete energy states with applied bias voltage. These findings suggest that the doped armchair GNR is a promising candidate for the next generation nanoscale device.

Fabrication and In Situ Transmission Electron Microscope Characterization of Free-Standing Graphene Nanoribbon Devices.

Edge-dependent electronic properties of graphene nanoribbons (GNRs) have attracted intense interests. To fully understand the electronic properties of GNRs, the combination of precise structural characterization and electronic property measurement is essential. For this purpose, two experimental techniques using free-standing GNR devices have been developed, which leads to the simultaneous characterization of electronic properties and structures of GNRs. Free-standing graphene has been sculpted by a focused electron beam in transmission electron microscope (TEM) and then purified and narrowed by Joule heating down to several nanometer width. Structure-dependent electronic properties are observed in TEM, and significant increase in sheet resistance and semiconducting behavior become more salient as the width of GNR decreases. The narrowest GNR width we obtained with the present method is about 1.6 nm with a large transport gap of 400 meV.

Spin-dependent transport properties in a pyrene–graphene nanoribbon device

We investigate the spin-dependent transport properties of a pyrene–zigzag graphene nanoribbon system. The results show that the system can exhibit multiple high-performance spin-dependent effects.

Review on graphene nanoribbon devices for logic applications

Graphene nanoribbon (GNR) devices are being extensively investigated as possible candidates for replacing silicon-channel devices in the next-generation integrated circuits and systems, due to their attractive physical properties for electronic applications. This requires to implement complete models to effectively predict the electronic transport behavior of the device, which should be modeled in circuit level simulators before reaching commercial production. Different methods for electronic transport simulations in nanoelectronic devices have been studied, comprising first-principle, empirical, semi-empirical and analytical. They can be used according to the complexity of the device, and the number of atoms and inter-atomic interactions that need to be considered. This work summarizes the methods and models used to characterize and simulate nanoelectronic devices. Additionally, we review the properties of GNRs, defect issues and the most recent approaches and manufacturing techniques that could be used to design GNR-based logic circuits.