Graphene Field Effect Transistor Devices Research Articles

Study of High-Energy Proton Irradiation Effects in Top-Gate Graphene Field-Effect Transistors

In this article, the effects of high-energy proton irradiation on top-gate graphene field-effect transistors (GFETs) were investigated by using 20 MeV protons. The basic electrical parameters of the top-gate GFETs were measured before and after proton irradiation with a fluence of 1 × 1011 p/cm2 and 5 × 1011 p/cm2, respectively. Decreased saturation current, increased Dirac sheet resistance, and negative drift in the Dirac voltage in response to proton irradiation were observed. According to the transfer characteristic curves, it was found that the carrier mobility was reduced after proton irradiation. The analysis suggests that proton irradiation generates a large net positive charge in the gate oxide layer, which induces a negative drift in the Dirac voltage. Introducing defects and increased impurities at the gate oxide/graphene interface after proton irradiation resulted in enhanced Coulomb scattering and reduced mobility of the carriers, which in turn affects the Dirac sheet resistance and saturation current. After annealing at room temperature, the electrical characteristics of the devices were partially restored. The results of the technical computer-aided design (TCAD) simulation indicate that the reduction in carrier mobility is the main reason for the degradation of the electrical performance of the device. Monte Carlo simulations were conducted to determine the ionization and nonionization energy losses induced by proton incidence in top-gate GFET devices. The simulation data show that the ionization energy loss is the primary cause of the degradation of the electrical performance.

Controllable Carrier Doping in Two-Dimensional Materials Using Electron-Beam Irradiation and Scalable Oxide Dielectrics.

Two-dimensional (2D) materials, characterized by their atomically thin nature and exceptional properties, hold significant promise for future nano-electronic applications. The precise control of carrier density in these 2D materials is essential for enhancing performance and enabling complex device functionalities. In this study, we present an electron-beam (e-beam) doping approach to achieve controllable carrier doping effects in graphene and MoS2 field-effect transistors (FETs) by leveraging charge-trapping oxide dielectrics. By adding an atomic layer deposition (ALD)-grown Al2O3 dielectric layer on top of the SiO2/Si substrate, we demonstrate that controllable and reversible carrier doping effects can be effectively induced in graphene and MoS2 FETs through e-beam doping. This new device configuration establishes an oxide interface that enhances charge-trapping capabilities, enabling the effective induction of electron and hole doping beyond the SiO2 breakdown limit using high-energy e-beam irradiation. Importantly, these high doping effects exhibit non-volatility and robust stability in both vacuum and air environments for graphene FET devices. This methodology enhances carrier modulation capabilities in 2D materials and holds great potential for advancing the development of scalable 2D nano-devices.

Interfacial Engineering of Quantum Dots–Metal–Organic Framework Composite Toward Efficient Charge Transport for a Short‐Wave Infrared Photodetector

AbstractShort‐wave infrared (SWIR) quantum dot (QD)‐converted photodetectors are one of the promising devices used in artificial intelligence and automatic navigation systems. However, compared to semi‐conductor‐type photodetectors, they suffer from poor chemical stability and weak electronic conductivity. In this study, a PbS QD and conductive metal–organic framework (MOF) hybrid composite is designed with SWIR detection capability. The Fourier‐transform infrared spectroscopy confirms the surface modification of PbS QDs with MOF. X‐ray absorption near‐edge structures spectra reveal the chemical bonding between MOF and PbS QDs. Furthermore, 2D grazing‐incidence small‐ and wide‐angle X‐ray scattering is utilized to unveil the particle stacking and the preferred orientation of the PbS@MOF thin film. By integrating the PbS@MOF thin film directly on top of the graphene field effect transistor (FET) device, the chemical stability and photoelectric properties of graphene FET are enhanced, and these are investigated using a focus ion beam with a high‐resolution transmission electron microscope. This study offers a strategy to simultaneously improve the chemical stability and the photoelectronic properties of the nanomaterials as well as contribute to the advancement of a QD‐converted SWIR photodetector.

Modelling and Optimization of the Differential Surface Capacitance in Electrolyte-Gated Graphene Field-Effect Transistors

Graphene field-effect transistors (GFETs) are a promising avenue for the detection of biomarkers, allowing to envision improvements in diagnostic approaches for different types of cancer and other diseases. To enable such applications, the detection metrics of the devices must be optimized, including their sensitivity, selectivity, and stability. In particular, the capacitance of the device is one of the key determinants of the sensitivity of the electrical current of graphene to nearby changes in electrical potentials. In this presentation, we present our approach to optimize the surface capacitance of electrolyte-gated GFETs, by investigating theoretically and/or experimentally the effect of specific design parameters, including the graphene area, the removal of the backgate, and the passivation of electrodes. On the theoretical side, a mathematical representation of the device capacitance was established as an equivalent circuit of capacitors modelling for the quantum capacitance of graphene, the backgate capacitance, and the capacitance of electrical double layers in the electrolyte. On the experimental side, microchips of GFET arrays were assembled using microfabrication techniques on two types of substrates: a standard Si++/SiO2 wafer in which the doped silicon layer is used as a backgate, and a pure non-conducting borosilicate glass wafer in comparison. The capacitance of the devices was then measured using a custom parallel electrical prober by stepping the applied voltage in the solution and analyzing the resulting current response through a standard RC direct current model. We will present our analyses by comparing the relative impact of electrode passivation, backgate usage, and graphene area on the capacitance of devices. These results will enable a rational design of GFET devices with improved sensitivity for their use in applications such as biological, chemical, and gas sensing.

Detection of Interleukin-6 Protein Using Graphene Field-Effect Transistor.

Universal platforms to analyze biomolecules using sensor devices can address critical diagnostic challenges. Sensor devices like electrical-based field-effect transistors play an essential role in sensing biomolecules by charge probing. Graphene-based devices are more suitable for these applications. It has been previously reported that Graphene Field-Effect Transistor (GFET) devices detect DNA hybridization, pH sensors, and protein molecules. Graphene became a promising material for electrical-based field-effect transistor devices in sensing biomarkers, including biomolecules and proteins. In the last decade, FET devices have detected biomolecules such as DNA molecules, pH, glucose, and protein. These studies have suggested that the reference electrode is placed externally and measures the transfer characteristics. However, the external probing method damages the samples, requiring safety measurements and a substantial amount of time. To control this problem, the graphene field-effect transistor (GFET) device is fabricated with an inbuilt gate that acts as a reference electrode to measure the biomolecules. Herein, the monolayer graphene is exfoliated, and the GFET is designed with an in-built gate to detect the Interleukin-6 (IL-6) protein. IL-6 is a multifunctional cytokine which plays a significant role in immune regulation and metabolism. Additionally, IL-6 subsidizes a variability of disease states, including many types of cancer development, and metastasis, progression, and increased levels of IL-6 are associated with a higher risk of cancer and can also serve as a prognostic marker for cancer. Here, the protein is desiccated on the GFET device and measured, and Dirac point shifting in the transfer characteristics systematically evaluates the device's performance. Our work yielded a conductive and electrical response with the IL-6 protein. This graphene-based transducer with an inbuilt gate gives a promising platform to enable low-cost, compact, facile, real-time, and sensitive amperometric sensors to detect IL-6. Targeting this pathway may help develop treatments for several other symptoms, such as neuromyelitis optica, uveitis, and, more recently, COVID-19 pneumonia.

Pure edge-contact devices on single-layer-CVD-graphene integrated into a single chip

We present a simple and cost-effective fabrication technique for on-chip integration of pure edge contact two-terminal (2T) and Graphene field effect transistor (GFET) devices with low contact resistance and nonlinear characteristics based on single-layer chemical-vapor-deposited (CVD) graphene. We use a smart print-based mask projection technique with a 10X magnification objective lens for maskless lithography followed by thermal evaporation of the contact material Cr-Pd-Au through three different angles (90° and ± 45°) using a customized inclined-angle sample-holder to control the angle during normal incidence evaporation for edge-contact to graphene. Our fabrication technique, graphene quality, and contact geometry enable pure metal contact to 2D single-layer graphene allowing electron transport through the 1D atomic edge of graphene. Our devices show some signatures of edge contact to graphene in terms of very low contact resistance of 23.5 Ω, the sheet resistance of 11.5 Ω, and sharp nonlinear voltage-current characteristics (VCC) which are highly sensitive to the bias voltage. This study may find application in future graphene-integrated chip-scale passive or active low-power electronic devices.

Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics.

In this work, we explored the potential of the ferroelectric gate of (Pb0.92La0.08)(Zr0.30Ti0.70)O3 (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the VDirac of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of VDirac is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of VDirac under bending deformation of relaxor ferroelectric (Pb0.92La0.08)(Zr0.52Ti0.48)O3 (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices.

Functionalisation of Graphene Sensor Surfaces for the Specific Detection of Biomarkers.

We report on a controllable and specific functionalisation route for graphene field-effect transistors (GFETs) for the recognition of small physiologically active molecules. Key element is the noncovalent functionalisation of the graphene surface with perylene bisimide (PBI) molecules directly on the growth substrate. This Functional Layer Transfer enables the homogeneous self-assembly of PBI molecules on graphene, onto which antibodies are subsequently immobilised. The sensor surface was characterised by atomic force microscopy, Raman spectroscopy and electrical measurements, showing superior performance over conventional functionalisation after transfer. Specific sensing of small molecules was realised by monitoring the electrical property changes of functionalised GFET devices upon the application of methamphetamine and cortisol. The concentration dependent electrical response of our sensors was determined down to a concentration of 300 ng ml-1 for methamphetamine.

Functionalisation of Graphene Sensor Surfaces for the Specific Detection of Biomarkers

AbstractWe report on a controllable and specific functionalisation route for graphene field‐effect transistors (GFETs) for the recognition of small physiologically active molecules. Key element is the noncovalent functionalisation of the graphene surface with perylene bisimide (PBI) molecules directly on the growth substrate. This Functional Layer Transfer enables the homogeneous self‐assembly of PBI molecules on graphene, onto which antibodies are subsequently immobilised. The sensor surface was characterised by atomic force microscopy, Raman spectroscopy and electrical measurements, showing superior performance over conventional functionalisation after transfer. Specific sensing of small molecules was realised by monitoring the electrical property changes of functionalised GFET devices upon the application of methamphetamine and cortisol. The concentration dependent electrical response of our sensors was determined down to a concentration of 300 ng ml−1 for methamphetamine.

Fabrication and Characterization of Epitaxial Graphene Field Effect Transistor Devices Based on a Monolithic Bottom Gate

Current electronics technology increasingly demands higher integration, flexibility, higher efficiency, and performance aspects such as compatibility with higher temperature operation of the semiconductor devices, which may find limitations when silicon is used. The superior intrinsic properties of SiC, eventually combined with the ability of growing monolithically epitaxial, high quality graphene on a SiC wafer (1), makes it a reliable alternative for some electronic applications, such as field effect transistors (FET), radio frequency (RF) power amplifiers, integrated circuits (IC), or sensors. In this work, we describe the fabrication and preliminary electrical characterizations of epitaxial graphene (EG) on a SiC substrate FET devices based on an alternative back gate architecture. We propose a new approach in which the FET device is built on a 4◦ off-axis cut, N+ doped 4H-SiC substrate (the back gate) with, on top of, it a 1μm semi-insulating homoepitaxial layer of SiC compensated with vanadium (the dielectric layer). EG will be used as FET conduction channel. Using this V-compensated dielectric layer is aimed to minimize effects on the FET characteristics such as from defects in the SiC crystal, especially below the FET active areas, which would have occurred when using ion implantation to create a buried gate. The EG film was grown by the high temperature Si sublimation method under an Ar ambient. Raman spectroscopy, Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM) were applied in the structural characterization of epigraphene. The lack of D-peak in Raman spectra, together with SEM and AFM images, indicate that high quality monolayer to few layer epitaxial graphene fully covering the SiC surface is deposited. The electrical characteristics of the EG channel-devices and the functionality of the bottom gate were examined with 2-probe and 4-probe method. The electrical properties of the FET devices were also investigated with 3 terminal configuration.

Performance Enhancement and Comparison of Graphene Field Effect Transistor Devices Coated with HMDS Layer

Graphene-based devices show good transfer characteristics, which depend upon the surface morphology of the material and substrate. During fabrication of the device, the substrate morphology is disturbed inappropriately by the surface contamination. In the present study, monolayer Graphene Field Effect Transistor (GFET) has been driven with hydrophobic Hexamethyl Disilazane (HMDS) layer. The HMDS layer is dehydrated before and after the exfoliated monolayer graphene, and the electrical characteristics were measured. The transfer curve of the HMDS coated graphene device demonstrates excellent FET characteristics and prevents contamination from the atmosphere under ambient conditions. Fabrication of GFET device on the hydrophobic substrate enhances the effective ambipolar behavior. It is beginning with an excellent platform and user-friendly device for biosensing applications.

Simulation of the Electrical and Thermal Properties of a Graphene Field Effect Transistor

In this paper, the electrical and thermal properties of Graphene field effect transistor (GFET) has been simulated by varying the width of graphene channel. Here, the electrical characteristics, like electron density, hole density, I-V Characteristics and charge carrier velocity profile in the channel region has been studied for three different values of graphene channel width: 1 nm, 2 nm and 5 nm. To analyse the thermal properties of the GFET device, the temperature profile of the graphene channel has been simulated for 100, 300 and 500K. After analysing the simulation of this characteristics, it is concluded that, both electrical and thermal properties of GFET can be improved by fabricating the channel with larger width in the GFET device.

Detection of Glial Fibrillary Acidic Protein in Patient Plasma Using On-Chip Graphene Field-Effect Biosensors, in Comparison with ELISA and Single-Molecule Array.

Glial fibrillary acidic protein (GFAP) is a discriminative blood biomarker for many neurological diseases, such as traumatic brain injury. Detection of GFAP in buffer solutions using biosensors has been demonstrated, but accurate quantification of GFAP in patient samples has not been reported, yet in urgent need. Herein, we demonstrate a robust on-chip graphene field-effect transistor (GFET) biosensing method for sensitive and ultrafast detection of GFAP in patient plasma. Patients with moderate–severe traumatic brain injuries, defined by the Mayo classification, are recruited to provide plasma samples. The binding of target GFAP with the specific antibodies that are conjugated on a monolayer GFET device triggers the shift of its Dirac point, and this signal change is correlated with the GFAP concentration in the patient plasma. The limit of detection (LOD) values of 20 fg/mL (400 aM) in buffer solution and 231 fg/mL (4 fM) in patient plasma have been achieved using this approach. In parallel, for the first time, we compare our results to the state-of-the-art single-molecule array (Simoa) technology and the classic enzyme-linked immunosorbent assay (ELISA) for reference. The GFET biosensor shows competitive LOD to Simoa (1.18 pg/mL) and faster sample-to-result time (<15 min), and also it is cheaper and more user-friendly. In comparison to ELISA, GFET offers advantages of total detection time, detection sensitivity, and simplicity. This GFET biosensing platform holds high promise for the point-of-care diagnosis and monitoring of traumatic brain injury in GP surgeries and patient homes.

UV Illumination as a Method to Improve the Performance of Gas Sensors Based on Graphene Field-Effect Transistors.

The ability to detect and recognize airborne chemical species is essential to enable applications in security, health, and environmental monitoring. Here, we report a sensing platform based on graphene field-effect transistor (GFET) devices combined with optical illumination for the detection of volatile compounds. We compare the change in resistance of GFET sensors upon exposure to analytes such as ethanol, dimethyl methylphosphonate (DMMP), and water vapors with and without the presence of a local illuminating ultraviolet (UV) light-emitting diode (LED). Our results show that UV illumination acts as a control knob for the electronic transport properties of graphene, increasing the device's response to ethanol, water, and DMMP, up to a factor of 54, and enabling ppb-level detection of DMMP at 800 ppb without chemical functionalization of the graphene layer. The sensing response can be optimized to reveal an analyte-specific interplay between the induced changes in carrier concentration and mobility of the GFET. These findings provide a pathway to enhancing the sensitivity of GFET sensors and a differentiation channel to improve their selectivity.

Novel graphene-based OPFET for optoelectronic applications

Graphene-based FET (Field Effect Transistor) has been widely explored for high speed optical applications such as photodetectors, terahertz modulators etc. On the other hand, graphene MESFET (Metal-Semiconductor Field Effect Transistor) which is not yet explored bears a thin line of distinction with respect to the graphene FET i.e. the oxide/insulator capacitance in graphene FET is replaced with dipole capacitance in graphene MESFET. This thin difference creates a significant variation in the characteristics of both the devices. In this paper, we comparatively analyze the photogating, high frequency amplification, inter-band, and intra-band performance of graphene FET and graphene MESFET devices for photodetection and terahertz modulation applications.

Optimization of oxygen plasma based etching of single layered graphene through Raman and FESEM characterization

Graphene field-effect transistors (GFETs) show high electron transfer rates, high charge-carrier mobility, low electrical noise levels and flexibility of surface functionalization, which are useful to realize the sensors for various applications. The key challenge is to develop the processes to fabricate a uniform array of GFETs devices. In this paper, single-layered graphene (SLG) was synthesized on copper (Cu) substrate using chemical vapor deposition (CVD) followed by its successful transfer over silicon (Si) substrate. To realize an array of graphene-based devices/ sensors, the process of oxygen plasma based clean etching of SLG was optimized. The Raman and Field Emission Scanning Electron Microscope (FESEM) characterizations ensure the complete etching of SLG in 240 s using 200 W, RF (13.56 MHz) power. Optimized SLG etching would help to fabricate an array of GFETs as a biochemical sensor platform.

A Compact Sensory Platform Based pH Sensor Using Graphene Field Effect Transistor.

A compact sensory platform has been fabricated using a graphene field effect transistor (GFET) to identify the biomolecules by pH sensing. The monolayer GFET is driven by an in-built top-gate for detecting the pH of the contacting buffer solution. The GFET device detects the effect of hydroxide ions on a graphite surface. Electrical characteristics of the device were measured after desiccating the buffer solution on the surface of the monolayer graphene. Electrically, the VDirac point shifted toward the positive direction when the pH value of the buffer solution is varied. The transfer curve of the device also moved in the positive direction with increasing pH values, indicating charge transfer from dopant molecules to the surface of graphene. The sensitivity of the device was estimated to be ~48.5 mV/pH. The fabrication of the compact GFET device with an in-built gate provides a platform for effective pH sensing with a user-friendly interface for biosensing applications.

Wafer-scalable chemical modification of amino groups on graphene biosensors.

Graphene's remarkable attributes make it suitable for application to biosensors for biomolecular recognition. Specific and precise target detection is realized by designing robust methods for immobilization of probe molecules, such as oligonucleotides, antibodies, receptors, and sugar chains, to a device surface. In this research, we developed a chemical modification method with a plasma treatment of amino groups on natural defects of graphene, which is compatible with a wafer-scalable semiconductor process, to prevent deterioration of the carrier mobility. The plasma treatment was optimized in terms of the efficiency of the amino radical generation, length of the mean free path, and reaction energy on graphene. The density of the modified amino groups on graphene was approximately 0.065 groups/nm2, and the change in the ΔId/ΔVg characteristic of the graphene field-effect transistor (FET) was negligible. DNA probes were then attached to the amino groups on the graphene FET. The target complementary DNA was detected at 1 nM after hybridization using the graphene FET devices. The plasma-assisted modification of the amino groups on the graphene surface was developed for immobilization of the DNA probes, and hybridization with the target DNA was demonstrated without deterioration of the carrier mobility.

Room-temperature negative magnetoresistance of helium-ion-irradiated defective graphene in the strong Anderson localization regime

Anderson localization (AL), a major topic in condensed matter physics, has been extensively studied. Since the discovery of graphene, its unique AL in Dirac materials, particularly weak localization (WL), has been studied intensively. Strong localization (SL) has also been investigated in graphene with intentionally introduced defects. The precise control of spacing/strength of defects using conventional methods is challenging; thus, He-ion-irradiation is a promising technology. However, magnetotransport, a sensitive tool to probe AL, has not yet been studied for He-ion-irradiated graphene. Herein, we systematically investigate the magnetotransport of He-ion-irradiated graphene. We observe negative magnetoresistance (MR) due to SL-dominated hopping transport. By systematically tuning the device parameters, negative MR at room temperature is first revealed for graphene field-effect transistor devices. Our study reveals carrier localization via searching in the multidimensional parameter space of Dirac materials, contributing to the development of fundamental AL physics and magnetoelectronic device applications.

Graphene functionalized field-effect transistors for ultrasensitive detection of Japanese encephalitis and Avian influenza virus

Graphene, a two-dimensional nanomaterial, has gained immense interest in biosensing applications due to its large surface-to-volume ratio, and excellent electrical properties. Herein, a compact and user-friendly graphene field effect transistor (GraFET) based ultrasensitive biosensor has been developed for detecting Japanese Encephalitis Virus (JEV) and Avian Influenza Virus (AIV). The novel sensing platform comprised of carboxy functionalized graphene on Si/SiO2 substrate for covalent immobilization of monoclonal antibodies of JEV and AIV. The bioconjugation and fabrication process of GraFET was characterized by various biophysical techniques such as Ultraviolet–Visible (UV–Vis), Raman, Fourier-Transform Infrared (FT-IR) spectroscopy, optical microscopy, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The change in the resistance due to antigen–antibody interaction was monitored in real time to evaluate the electrical response of the sensors. The sensors were tested in the range of 1 fM to 1 μM for both JEV and AIV antigens, and showed a limit of detection (LOD) upto 1 fM and 10 fM for JEV and AIV respectively under optimised conditions. Along with ease of fabrication, the GraFET devices were highly sensitive, specific, reproducible, and capable of detecting ultralow levels of JEV and AIV antigen. Moreover, these devices can be easily integrated into miniaturized FET-based real-time sensors for the rapid, cost-effective, and early Point of Care (PoC) diagnosis of JEV and AIV.