Abstract
Graphene-based FET (Field Effect Transistor) has been widely explored for high speed optical applications such as photodetectors, terahertz modulators etc. On the other hand, graphene MESFET (Metal-Semiconductor Field Effect Transistor) which is not yet explored bears a thin line of distinction with respect to the graphene FET i.e. the oxide/insulator capacitance in graphene FET is replaced with dipole capacitance in graphene MESFET. This thin difference creates a significant variation in the characteristics of both the devices. In this paper, we comparatively analyze the photogating, high frequency amplification, inter-band, and intra-band performance of graphene FET and graphene MESFET devices for photodetection and terahertz modulation applications.
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