Abstract

Graphene field-effect transistors (GFETs) are a promising avenue for the detection of biomarkers, allowing to envision improvements in diagnostic approaches for different types of cancer and other diseases. To enable such applications, the detection metrics of the devices must be optimized, including their sensitivity, selectivity, and stability. In particular, the capacitance of the device is one of the key determinants of the sensitivity of the electrical current of graphene to nearby changes in electrical potentials. In this presentation, we present our approach to optimize the surface capacitance of electrolyte-gated GFETs, by investigating theoretically and/or experimentally the effect of specific design parameters, including the graphene area, the removal of the backgate, and the passivation of electrodes. On the theoretical side, a mathematical representation of the device capacitance was established as an equivalent circuit of capacitors modelling for the quantum capacitance of graphene, the backgate capacitance, and the capacitance of electrical double layers in the electrolyte. On the experimental side, microchips of GFET arrays were assembled using microfabrication techniques on two types of substrates: a standard Si++/SiO2 wafer in which the doped silicon layer is used as a backgate, and a pure non-conducting borosilicate glass wafer in comparison. The capacitance of the devices was then measured using a custom parallel electrical prober by stepping the applied voltage in the solution and analyzing the resulting current response through a standard RC direct current model. We will present our analyses by comparing the relative impact of electrode passivation, backgate usage, and graphene area on the capacitance of devices. These results will enable a rational design of GFET devices with improved sensitivity for their use in applications such as biological, chemical, and gas sensing.

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