Graphene Field-effect Transistors Research Articles

Advances in Graphene Field Effect Transistors (FETs) for Amine Neurotransmitter Sensing

Amine neurotransmitters (NTs) are crucial in the central nervous system, and dysregulation in their levels is implicated in a spectrum of neurological disorders. Thus, a precise and timely assessment of their concentrations is critical for early diagnosis and treatment efficacy monitoring. Graphene-based field effect transistors (GFETs) have become a ground-breaking instrument in the detection of these NTs because of their exceptional electrical characteristics and adaptability. This paper summarises the significant advancements in GFET biosensors in amine NT detection and highlights developments in the selectivity, sensitivity, and limit of detection (LOD) attained by selecting various graphene materials and functionalisation approaches.

Graphene Field‐Effect Transistors toward Study of Cardiac Ischemia at Early Stage

AbstractIschemia and reperfusion states are studied in a network of cardiomyocytes as a part of real‐state conditions of heart injuries and inflammations, specifically myocardial infractions. Arrays of graphene field‐effect transistors (GFETs) fabricated in this work are used for extracellular recordings of ischemia states of cardiac cells during the external triggering of the ischemia infarction. The low‐concentrated ischemic buffer solution allows to create a cell‐stress condition resulting in the reperfusion process. The results show that the action potentials recorded with the graphene transistors, especially their shape, and duration of the active segment in measured extracellular action potentials, can be used to characterize the real state of the studied cardiac cell culture. The unique property of GFETs to detect such small changes in the action potential of cells in cardiac healthy and unhealthy states provides prospects for building the next generation of ultrasensitive biosensors, enabling the detection of acute ischemic states at an early stage.

Optimization of Sensor Morphology and Sensing Performance in a Non-enzymatic Graphene FET Biosensor for Detection of Biomolecules in Complex Analytes

Optimization of Sensor Morphology and Sensing Performance in a Non-enzymatic Graphene FET Biosensor for Detection of Biomolecules in Complex Analytes

Biosensing beyond Debye screening length using epitaxial graphene field-effect transistors on SiC substrate

We demonstrated the antigen detection beyond Debye screening length using antibody-modified epitaxial graphene field-effect transistors (FETs), which have been considered to be impossible because of the Debye screening length. The transfer characteristics of the graphene FETs with a single crystal epitaxial graphene film showed no concentration dependence of buffer solutions. The capacitance measurements in an epitaxial graphene FET also showed no concentration dependence, indicating that the solution-gate capacitance of the epitaxial graphene FET was independent on the Debye screening length. In addition, the minimum capacitance values were also almost independent for the concentration change. Since the Debye screening length depends on the ionic strength of the solution, which is proportional to the buffer solution concentration, the electrical characteristics of solution-gated epitaxial graphene FETs are almost independent on the Debye screening length owing to their small quantum capacitance. The antibody-modified epitaxial graphene FETs indeed detected the antigen, indicating that the epitaxial graphene FETs can detect the target beyond the Debye screening length without any complicated device fabrication processes and other desalted apparatuses.

High-Data-Rate Modulators Based on Graphene Transistors: Device Circuit Co-Design Proposals

The multifunctionality feature of graphene field-effect transistors (GFETs) is exploited here to design circuit building blocks of high-data-rate modulators by using a physics-based compact model. Educated device performance projections are obtained with the experimentally calibrated model and used to choose an appropriate improved feasible GFET for these applications. Phase-shift and frequency-shift keying (PSK and FSK) modulation schemes are obtained with 0.6 GHz GFET-based multifunctional circuits used alternatively in different operation modes: inverting and in-phase amplification and frequency multiplication. An adequate baseband signal applied to the transistors’ input also serves to enhance the device and circuit performance reproducibility since the impact of traps is diminished. Quadrature PSK is also achieved by combining two GFET-based multifunctional circuits. This device circuit co-design proposal intends to boost the heterogeneous implementation of graphene devices with incumbent technologies into a single chip: the baseband pulses can be generated with CMOS technology as a front end of line and the multifunctional GFET-based circuits as a back end of line.

Elucidating the time-dependent charge neutrality point modulation of polymer-coated graphene field-effect transistors in an ambient environment.

The charge neutrality point (CNP) is one of the essential parameters in the development of graphene field-effect transistors (GFETs). For GFET with an intrinsic graphene channel layer, the CNP is typically near-zero-volt gate voltage, implying that a well-balanced density of electrons and holes exists in the graphene channel layer. Fabricated GFET, however, typically exhibits CNP that is either positively or negatively shifted from the near-zero-volt gate voltage, implying that the graphene channel layer is unintentionally doped, leading to a unipolar GFET transfer characteristic. Furthermore, the CNP is also modulated in time, indicating that charges are dynamically induced in the graphene channel layer. In this work, understanding and mitigating the CNP shift were attempted by introducing passivation layers made of polyvinyl alcohol and polydimethylsiloxane onto the graphene channel layer. The CNP was found to be negatively shifted, recovered back to near-zero-volt gate voltage, and then positively shifted in time. By analyzing the charge density, carrier mobility, and correlation between the CNP and the charge density, it can be concluded that positive CNP shifts can be attributed to the charge trapping at the graphene/SiO2interface. The negative CNP shift, on the other hand, is caused by dipole coupling between dipoles in the polymer layer and carriers on the surface of the graphene layer. By gaining a deeper understanding of the intricate mechanisms governing the CNP shifts, an ambiently stable GFET suitable for next-generation electronics could be realized.

Process Development of a Liquid-Gated Graphene Field-Effect Transistor Gas Sensor for Applications in Smart Agriculture

A compact, multi-channel ionic liquid-gated graphene field-effect transistor (FET) has been proposed and developed in our work for on-field continuous monitoring of nitrate nitrogen and other nitrogen fertilizers to achieve sustainable and efficient farming practices in agriculture. However, fabricating graphene FETs with easy filling of ionic liquids, minimal graphene defects, and high process yields remains challenging, given the sensitivity of these devices to processing conditions and environmental factors. In this work, two approaches for the fabrication of our graphene FETs were presented, evaluated, and compared for high yields and easy filling of ionic liquids. The process difficulties, major obstacles, and improvements are discussed herein in detail. Both devices, those fabricated using a 3 μm-thick CYTOP® layer for position restriction and volume control of the ionic liquid and those using a ~20 nm-thick photosensitive hydrophobic layer for the same purpose, exhibited typical FET characteristics and were applicable to various application environments. The research findings and experiences presented in this paper will provide important references to related societies for the design, fabrication, and application of liquid-gated graphene FETs.

Development of a graphene field effect transistor-based immersible biosensor for immunodetection of the birch pollen allergen Bet v 1 in air samples

Pollen traps, the current gold standard to determine pollen load and thereby the allergy season, are not sufficient to determine the allergenic risk. Therefore, the establishment of highly sensitive assays for allergen measurement is of highest interest. Herein, a graphene field-effect transistor (GFET) was constructed on an interdigitated electrodes chip to develop an immersible biosensor, which was used to detect the major birch pollen allergen Bet v 1. Graphene was wet-transferred on interdigitated electrodes that contain a reference electrode used as a liquid gate in the GFET. Using a standard ELISA protocol, two different anti-Bet v 1 antibodies were chosen and immobilized on graphene for the specific capture of the target allergen. The sensitivity of the GFET biosensor was evaluated using a standard Ag/AgCl liquid gate electrode and a reference electrode when the chip was immersed in Bet v 1-containing solutions. The results showed a higher performance and sensitivity for Bet v 1 detection compared to a mediator release method, one of the most sensitive assays for allergen detection. Compared with conventional methods of allergen detection, these immersible biosensors significantly improved the speed and level of detection providing the foundation of a point-of-need platform for in-field application. Furthermore, the proposed technique provides both a new biosensor for allergen detection and a strategy for designing low-cost integrated biosensors.

Duplex-specific-nuclease-assisted graphene field-effect transistor biosensor: A novel platform for preamplification-free detection of cancer related miRNA

The pivotal role of microRNA (miRNA) in cancer diagnosis and monitoring is well recognized, yet current detection methods remain complex and costly, given the rarity of tumor miRNA in the bloodstream. This study proposes a simple and elegant miRNA sensing platform utilizing duplex-specific nuclease (DSN) and ultrasensitive graphene field-effect transistor (GFET) biosensors. The DSN-assisted GFET enables preamplification-free detection of miR-21, a promising cancer biomarker, at dilutions down to 25 aM. Along with the successful validation of its excellent specificity using clinical plasma samples without RNA extraction process, this innovative approach holds great promise for improving cancer diagnostics and monitoring.

Bridging basic science and applied diagnostics: Comprehensive viral diagnostics enabled by graphene-based electronic biosensor technology advancements

This study presents a graphene field-effect transistor (gFET) biosensor with dual detection capabilities for SARS-CoV-2: one RNA detection assay to confirm viral positivity and the other for nucleocapsid (N-)protein detection as a proxy for infectiousness of the patient. This technology can be rapidly adapted to emerging infectious diseases, making an essential tool to contain future pandemics. To detect viral RNA, the highly conserved E-gene of the virus was targeted, allowing for the determination of SARS-CoV-2 presence or absence using nasopharyngeal swab samples. For N-protein detection, specific antibodies were used. Tested on 213 clinical nasopharyngeal samples, the gFET biosensor showed good correlation with RT-PCR cycle threshold values, proving its high sensitivity in detecting SARS-CoV-2 RNA. Specificity was confirmed using 21 pre-pandemic samples positive for other respiratory viruses. The gFET biosensor had a limit of detection (LOD) for N-protein of 0.9 pM, establishing a foundation for the development of a sensitive tool for monitoring active viral infection. Results of gFET based N-protein detection corresponded to the results of virus culture in all 16 available clinical samples and thus it also proved its capability to serve as a proxy for infectivity. Overall, these findings support the potential of the gFET biosensor as a point-of-care device for rapid diagnosis of SARS-CoV-2 infection and indirect assessment of infectiousness in patients, providing additional information for clinical and public health decision-making.

Multi-sensor integration on one microfluidics chip for single-stranded DNA detection

PurposeThis study aims to improve detection efficiency of fluorescence biosensor or a graphene field-effect transistor biosensor. Graphene field-effect transistor biosensing and fluorescent biosensing were integrated and combined with magnetic nanoparticles to construct a multi-sensor integrated microfluidic biochip for detecting single-stranded DNA. Multi-sensor integrated biochip demonstrated higher detection reliability for a single target and could simultaneously detect different targets.Design/methodology/approachIn this study, the authors integrated graphene field-effect transistor biosensing and fluorescent biosensing, combined with magnetic nanoparticles, to fabricate a multi-sensor integrated microfluidic biochip for the detection of single-stranded deoxyribonucleic acid (DNA). Graphene films synthesized through chemical vapor deposition were transferred onto a glass substrate featuring two indium tin oxide electrodes, thus establishing conductive channels for the graphene field-effect transistor. Using π-π stacking, 1-pyrenebutanoic acid succinimidyl ester was immobilized onto the graphene film to serve as a medium for anchoring the probe aptamer. The fluorophore-labeled target DNA subsequently underwent hybridization with the probe aptamer, thereby forming a fluorescence detection channel.FindingsThis paper presents a novel approach using three channels of light, electricity and magnetism for the detection of single-stranded DNA, accompanied by the design of a microfluidic detection platform integrating biosensor chips. Remarkably, the detection limit achieved is 10 pm, with an impressively low relative standard deviation of 1.007%.Originality/valueBy detecting target DNA, the photo-electro-magnetic multi-sensor graphene field-effect transistor biosensor not only enhances the reliability and efficiency of detection but also exhibits additional advantages such as compact size, affordability, portability and straightforward automation. Real-time display of detection outcomes on the host facilitates a deeper comprehension of biochemical reaction dynamics. Moreover, besides detecting the same target, the sensor can also identify diverse targets, primarily leveraging the penetrative and noninvasive nature of light.

Fabrication of graphene field effect transistors on complex non-planar surfaces

Graphene field effect transistors (GFETs) are promising devices for biochemical sensing. Integrating GFETs onto complex non-planar surfaces could uncap their potential in emerging areas of wearable electronics, such as smart contact lenses and microneedle sensing. However, the fabrication of GFETs on non-planar surfaces is challenging using conventional lithography approaches. Here, we develop a combined spray-coating and photolithography setup for the scalable fabrication of GFETs on non-planar surfaces and demonstrate their application as integrated GFETs on microneedles. We optimize the setup to pattern ∼ 67 μm long GFET channels across the microneedle tips. Graphene is deposited between photo-patterned electrodes by spray-coating a liquid-phase exfoliated graphene ink while monitoring the channel resistance to achieve the required conductivity. The formation of the GFET channels is confirmed by SEM and EDX mapping, and the GFETs are shown to modulate in solution. This demonstrates an approach for manufacturing graphene electronic devices on complex non-planar surfaces like microneedles and opens possibilities for wearable GFET microneedle sensors for real-time monitoring of biomarkers.

Fabrication of Graphene-based Ammonia Sensors: A Review

Abstract: Graphene gas sensors have gained much scientific interest due to their high sensitivity, selectivity, and fast detection of various gases. This article summarizes the research progress of graphene gas sensors for detecting ammonia gas at room temperature. Firstly, the performance and development trends of the graphene/semiconductor Schottky diode sensor are discussed. Secondly, manufacturing methods and the latest developments in graphene field-effect transistor sensors are reviewed. Finally, the basic challenges and latest efforts of functional ammonia gas sensors are studied. The discussion delves into each sensor type's detection principles and performance indicators, including selectivity, stability, measurement range, response time, recovery time, and relative humidity. A comparative analysis is conducted to highlight the progress achieved in research, elucidating the advantages, disadvantages, and potential solutions associated with various sensors. As a result, the paper concludes by exploring the future development prospects of graphene-based ammonia sensors.

Rapid miRNA detection enhanced by exponential hybridization chain reaction in graphene field-effect transistors

Scalable electronic devices that can detect target biomarkers from clinical samples hold great promise for point-of-care nucleic acid testing, but still cannot achieve the detection of target molecules at an attomolar range within a short timeframe (<1 h). To tackle this daunting challenge, we integrate graphene field-effect transistors (GFETs) with exponential target recycling and hybridization chain reaction (TRHCR) to detect oligonucleotides (using miRNA as a model disease biomarker), achieving a detection limit of 100 aM and reducing the sensing time by 30-fold, from 15 h to 30 min. In contrast to traditional linear TRHCR, our exponential TRHCR enables the target miRNA to initiate an autocatalytic system with exponential kinetics, significantly accelerating the reaction speed. The resulting reaction products, long-necked double-stranded polymers with a negative charge, are effectively detected by the GFET through chemical gating, leading to a shift in the Dirac voltage. Therefore, by monitoring the magnitude of this voltage shift, the target miRNA is quantified with high sensitivity. Consequently, our approach successfully detects 22-mer miRNA at concentrations as low as 100 aM in human serum samples, achieving the desired short timeframe of 30 min, which is congruent with point-of-care testing, and demonstrates superior specificity against single-base mismatched interfering oligonucleotides.

Drug evaluation platform based on non-destructive and real-time in situ organoid fate state monitoring by graphene field-effect transistor

3D organoid models have been widely used in drug evaluation because they effectively mimic physiological conditions and cell–cell interactions. However, current organoid-based drug evaluation heavily relies on invasive methods like qRT-PCR and immunofluorescence quantification, which disrupts the organoid’s structure and physiological function during the evaluation process. Therefore, it is urgent to develop a non-destructive drug evaluation platform to continuously monitor organoid fate. Here, a non-destructive and real-time in situ platform based on field effect transistor sensor (NDRS-FET) was developed to monitor organoid fate and obtained accurate drug evaluation by conducting the dynamic models. Using liver organoid as the model, the transition kinetics of liver organoid fate in response to candidate drug compounds were recorded by the NDRS-FET platform. OSM, FH1 and BG45 were successfully identified as effective regulators of liver organoid fate. Compared to traditional methods, the NDRS-FET platform could not only accurately capture the drug effect on organoid in real time, but also reduce the intergroup deviation among samples, providing more accurate and reliable tool for drug development and screening.

Transfer-free p-type graphene field-effect transistors with high mobility and on/off ratio

Graphene is considered a promising material because of the novel functionalities associated with its outstanding charge transport properties. However, because graphene has no bandgap, its electrical conductivity cannot be controlled as in semiconductors, at present. Although many attempts have been made to achieve a bandgap opening in graphene, a meaningful bandgap opening for p-type field-effect-transistors (FETs) still remains a challenge. In this study, boron-doping in transfer-free monolayer graphene was successfully demonstrated for digital logic devices. Our approach is highly versatile, as it allows the fabrication of p-type single-crystal graphene FETs having a mobility of ∼290 cm2V−1s−1, an on/off ratio of 1.9 × 105, and a subthreshold swing of 70 mVdec−1. The scalability and versatility of this transfer-free approach for the fabrication of p-type graphene FETs pave the way for high-performance p-type graphene-based digital logic circuits.

Ferroelectric field effect transistors based on two-dimensional CuInP2S6 (CIPS) and graphene heterostructures

Heterostructures of two-dimensional (2D) materials comprise clean van der Waals (vdW) interfaces that can facilitate charge or energy transfer. Recently, the 2D ferroelectric CuInP2S6 (CIPS) has been integrated with graphene and other 2D materials to realize potentially novel low energy electronic devices. However, the influence of 2D CIPS on the properties of graphene and doping across the vdW interface has not been studied in detail. Here, we study graphene field effect transistors (FETs) with CIPS as the top gate. We find that CIPS leads to modulation of the graphene Fermi level due to local doping. We also find polarization-induced hysteresis in CIPS-gated graphene FETs. Electrical transport measurements from 50 to300 K show that above 200 K, the ferroelectric response decreases. As a result, the hysteresis voltage windows in the graphene ferroelectric FETs (FeFET) transfer curves decrease above 200 K. Our results show that interfacial remote doping affects the macroscopic polarization and performance of CIPS-based graphene FeFETs.Graphical abstractHighlightsThis research studies the temperature-dependent local doping across a vdW ferroelectric/2D channel interface that affects the transport properties of ferroelectric field effect transistors (FeFETs).Experimental findings showed ferroelectric polarization switching-based hysteresis in CuInP2S6-gated graphene FeFETs.DiscussionvdW ferroelectrics that can be scaled to atomic layer thicknesses are useful for miniaturised low energy electronics.Understanding the interface charge or energy transfer in vdW ferroelectrics is essential for their integration into current or future technologies.

Graphene Field‐Effect Transistors for Sensing Ion‐Channel Coupled Receptors: Toward Biohybrid Nanoelectronics for Chemical Detection

AbstractGraphene field effect transistors (G‐FETs) have appeared as suitable candidates for sensing charges and have thus attracted large interest for ion and chemical detections. In particular, their high sensitivity, chemical robustness, transparency, and bendability offer a unique combination for interfacing living and soft matters. Here demonstrated their ability to sense targeted biomolecules is demonstrated, by combining them with ion channel‐coupled receptors (ICCRs). These receptors are naturally or artificially expressed within living cell membranes to generate ion fluxes in the presence of chemicals of interest. Here, those biosensors are successfully combined with a G‐FET array which converts the bio‐activation of the ICCRs into readable electronic signals. This hybrid bioelectronic device leverages the advantages of the biological receptor and the graphene field effect transistor enabling the selective detection of biomolecules, which is a current shortcoming of electronic sensors. Additionally, the G‐FET allows for discrimination of the polarity of the ion fluxes which otherwise remains hidden from conventional electrophysiological recordings. The multisite recording ability offered by the G‐FET array raises numerous possibilities for multiscale sensing and high throughput screening of cellular solutions or analytes, which is of both fundamental and applied interest in health and environment monitoring.

Gate-Switchable Molecular Diffusion on a Graphene Field-Effect Transistor.

Controlling the surface diffusion of particles on 2D devices creates opportunities for advancing microscopic processes such as nanoassembly, thin-film growth, and catalysis. Here, we demonstrate the ability to control the diffusion of F4TCNQ molecules at the surface of clean graphene field-effect transistors (FETs) via electrostatic gating. Tuning the back-gate voltage (VG) of a graphene FET switches molecular adsorbates between negative and neutral charge states, leading to dramatic changes in their diffusion properties. Scanning tunneling microscopy measurements reveal that the diffusivity of neutral molecules decreases rapidly with a decreasing VG and involves rotational diffusion processes. The molecular diffusivity of negatively charged molecules, on the other hand, remains nearly constant over a wide range of applied VG values and is dominated by purely translational processes. First-principles density functional theory calculations confirm that the energy landscapes experienced by neutral vs charged molecules lead to diffusion behavior consistent with experiment. Gate-tunability of the diffusion barrier for F4TCNQ molecules on graphene enables graphene FETs to act as diffusion switches.

Digitalization of Enzyme-Linked Immunosorbent Assay with Graphene Field-Effect Transistors (G-ELISA) for Portable Ferritin Determination.

Herein, we present a novel approach to quantify ferritin based on the integration of an Enzyme-Linked Immunosorbent Assay (ELISA) protocol on a Graphene Field-Effect Transistor (gFET) for bioelectronic immunosensing. The G-ELISA strategy takes advantage of the gFET inherent capability of detecting pH changes for the amplification of ferritin detection using urease as a reporter enzyme, which catalyzes the hydrolysis of urea generating a local pH increment. A portable field-effect transistor reader and electrolyte-gated gFET arrangement are employed, enabling their operation in aqueous conditions at low potentials, which is crucial for effective biological sample detection. The graphene surface is functionalized with monoclonal anti-ferritin antibodies, along with an antifouling agent, to enhance the assay specificity and sensitivity. Markedly, G-ELISA exhibits outstanding sensing performance, reaching a lower limit of detection (LOD) and higher sensitivity in ferritin quantification than unamplified gFETs. Additionally, they offer rapid detection, capable of measuring ferritin concentrations in approximately 50 min. Because of the capacity of transistor miniaturization, our innovative G-ELISA approach holds promise for the portable bioelectronic detection of multiple biomarkers using a small amount of the sample, which would be a great advancement in point-of-care testing.