Graphene Field-effect Transistors Research Articles

Chemically doped-graphene FET photodetector enhancement via controlled carrier modulation with an iron(III)-chloride

Graphene is an excellent material among the family of 2D materials due to its electronic and optoelectronic properties. The intentional modification of its electronic structure via doping processes holds immense significance regarding tailoring its properties for specific applications. We comprehensively investigated p-type doping in few-layer graphene field-effect transistors (FETs) on SiO2/Si substrates by utilizing Iron(III)-chloride (FeCl3) dopant solutions with varying concentrations that range from 5 mM to 50 mM in this study. The successful doping was confirmed via a meticulous Raman spectroscopy analysis, which revealed notable shifts in the peak positions and peak broadening post-doping. Electrical measurements, which include transfer curves at a fixed biasing voltage, provided further confirmation, which demonstrates a distinctive shift in the Dirac point from −1 V to +25 V when the FeCl3 concentrations were changed from 5 mM to 50 mM. The impact of doping on the photoresponse of the graphene device was systematically explored. The device exhibited a significant increase in responsivity and external quantum efficiency following the p-type doping, which indicates an enhanced performance in photodetection. This research validates the successful p-type doping of graphene and underscores its implications regarding optimizing the electrical and optoelectronic properties of graphene-based devices, which confirms its potential for advanced applications for electronic and optoelectronic technologies.

CRISPR-Enabled Graphene-Based Bio-Cyber Interface Model for In Vivo Monitoring of Non-Invasive Therapeutic Processes.

In this paper, we present a model of the bio-cyber interface for the Internet of Bio-Nano Things application. The proposed model is inspired by the gains of integrating the Clustered Regularly Interspace Short Palindromic Repeats (CRISPR) technology with the Graphene-Field effect transistor (GFET). The capabilities of the integrated system are harnessed to detect nucleic acids transcribed by another component of the bio-cyber interface, a bioreporter, on being exposed to the signalling molecule of interest. The proposed model offers a label-free real-time signal transduction with multi-symbol signalling capability. We model the entire operation of the interface as a set of simultaneous differential equations representing the process's kinetics. The solution to the model is obtained using a numerical method. Numerical results show that the performance of the interface is influenced by parameters such as the concentrations of the input signalling molecules, the surface receptor on the bioreporter, and the CRISPR complex. The interface's performance also depends considerably on the elimination rate of the signalling molecules from the body. For multi-symbol molecular signalling, the rate of degradation of the transcribed RNAs influences the system's susceptibility to inter-symbol interference.

Drift suppression of solution-gated graphene field-effect transistors through electrolyte submersion

In solution-gated graphene FETs (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO2. Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-GFETs. In this study, we investigated the effect of submerging GFETs in electrolyte solutions on CNP values. The results revealed that the CNP decreased considerably from approximately 180 mV to nearly zero with the increase in the immersion period. The CNP drifts during electrical measurements were also suppressed by the prolonged submersion. These insights can be used for developing improved SG-GFETs.

Unveiling the mechanism behind the negative capacitance effect in Hf0.5Zr0.5O2-Based ferroelectric gate stacks and introducing a Circuit-Compatible hybrid compact model for Leakage-Aware NCFETs

This paper addresses the lack of understanding of the origin of negative capacitance (NC) effect in the hafnium zirconium oxide (HZO) ferroelectric (FE) gate stack and proposes a new circuit-compatible hybrid compact model for NC field-effect transistors (NCFETs). The model supports Landau and Preisach FE models, encompassing multiple FE domains, FE leakage, and FE damping. The proposed model is experimentally validated, and the intrinsic switching speed of HZO is predicted. It is revealed that the NC effect in HZO stems from a mismatch in free charge and polarization switching rates. Performance evaluation of the model reveals that HZO-NCFET achieves ∼1.18x and ∼9.17x higher amplification at low and high frequencies compared to its PZT-NCFET counterpart. Our study demonstrates the superior ON-current (2.74 mA/µm) of the Engineered Leaky-HZO NCFET, surpassing FinFET and Germanium-source L-shaped TFET by ∼7.89x and ∼4.81x, respectively. This study briefly examines the direct causes of the negative drain-induced barrier lowering effect and negative differential resistance effect in Landau NCFETs. Furthermore, we emphasize the crucial role of FE thickness in determining the magnitude of the NC effect, offering valuable insights for the design and optimization of NC-based devices and circuits. Analysis of the Miller effect in NCFET-based inverters demonstrates significant improvements owing to high ON-current and voltage amplification, making them suitable for high-speed NCFET-based circuitry. Landau and Preisach NCFET-based inverters exhibit (50.70%, 51.34%) lower overshoots and (28.45%, 28.61%) reduced propagation delay compared to the NC nanowire FET-based inverter. Moreover, NCFET-based 2:1 fork circuits significantly reduce (46.69%, 51.37%) critical clock skew compared to CMOS FET-based circuits, showcasing the potential of NCFET technology in addressing timing violations in random logic paths. Furthermore, the Landau and Preisach NCFET-based ring oscillators (ROs) achieve (39.97%, 49.38%) and (52.65%, 62.92%) higher oscillation frequencies (fOSC) compared to state-of-the-art graphene FET-RO and CMOS-RO, respectively. The 15-stage Leaky-HZO and Engineered Leaky-HZO NCFET-ROs outperform the double gate-FET-RO by ∼2.19x and ∼16.69x in terms of fOSC, highlighting their superior performance in frequency-domain metrics. These findings demonstrate the potential of NCFET-based digital and mixed-signal circuits for high-performance integrated circuit designs.

Terahertz Detection with Graphene FETs: Photothermoelectric and Resistive Self-Mixing Contributions to the Detector Response

Terahertz Detection with Graphene FETs: Photothermoelectric and Resistive Self-Mixing Contributions to the Detector Response

Graphene Field-Effect Transistors with Surface-Charge Modulation for C-Reactive Protein Detection in Artificial Saliva

Graphene Field-Effect Transistors with Surface-Charge Modulation for C-Reactive Protein Detection in Artificial Saliva

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat interfaces with graphene and at the same time contain small densities of traps to maintain high device stability. Previously used amorphous oxides, such as SiO2 and Al2O3, however, typically suffer from oxide dangling bonds at the interface, high surface roughness and numerous border oxide traps. In order to address these challenges, here we use 2 nm thick epitaxial CaF2 as a gate insulator in GFETs. By analyzing device-to-device variability for about 200 devices fabricated in two batches, we find that tens of them show similar gate transfer characteristics. Our statistical analysis of the hysteresis up to 175oC has revealed that while an ambient-sensitive counterclockwise hysteresis can be present in some devices, the dominant mechanism is thermally activated charge trapping by border defects in CaF2 which results in the conventional clockwise hysteresis. We demonstrate that both the hysteresis and bias-temperature instabilities in our GFETs with CaF2 are comparable to similar devices with SiO2 and Al2O3. In particular, we achieve a small hysteresis below 0.01 V for equivalent oxide thickness (EOT) of about 1 nm at the electric fields up to 15 MV cm−1 and sweep times in the kilosecond range. Thus, our results demonstrate that crystalline CaF2 is a promising insulator for highly-stable GFETs.

Comprehensive Study and Design of Graphene Transistor.

Graphene, renowned for its exceptional electrical, optical, and mechanical properties, takes center stage in the realm of next-generation electronics. In this paper, we provide a thorough investigation into the comprehensive fabrication process of graphene field-effect transistors. Recognizing the pivotal role graphene quality plays in determining device performance, we explore many techniques and metrological methods to assess and ensure the superior quality of graphene layers. In addition, we delve into the intricate nuances of doping graphene and examine its effects on electronic properties. We uncover the transformative impact these dopants have on the charge carrier concentration, bandgap, and overall device performance. By amalgamating these critical facets of graphene field-effect transistors fabrication and analysis, this study offers a holistic understanding for researchers and engineers aiming to optimize the performance of graphene-based electronic devices.

Flexible field-effect transistors with high-quality and uniform single-layer graphene for high mobility

In this work, a fully flexible graphene field-effect transistor with high carrier mobility is reported. Patterned high-quality and uniform single-layer graphene films are successfully realized by combining the selective growth on a patterned copper foil and the direct transfer method to minimize degradation factors. The selectively grown single-layer graphene is directly transferred to the target substrate through the deposition of poly-para-xylylene (Parylene) C. The quality of the graphene films is confirmed by Raman spectroscopy. The analysis reveals that the use of Parylene C as the substrate, gate dielectric, and encapsulation layer has the advantage of reducing the scattering by the optical phonons and charge puddles. The estimated residual carrier density is 1.72 × 1011 cm−2, and the intrinsic hole and electron carrier mobilities are found to be as high as 10 260 and 10 010 cm2 V−1 s−1, respectively. This study can pave the way for the development and mass production of high-performance and fully flexible graphene electronics.

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna.

An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions (np, pn or pp+) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent.

Ultrasensitive detecting of dopamine in complex components by field effect transistor sensor based on the synergistic enhancement effect and overcoming debye length limitations

Field effect transistor (FET) has attracted high attention in biomolecules detection. However, the sensitivity of FET-based biosensors is often limited by the charge screening effect. In addition, the facile and ultra-sensitive detection for small biomolecules, which possess weak charge or electroneutral, remains to be studied. Here, the self-assembled monolayer AuNPs/three-dimensional (3D) crumpled graphene FET is structured for a biosensor by shrinking flexible polystyrene (PS) films through heat treatment method and realized label-free and ultra-sensitive detection of dopamine (DA) using DA aptamer as probes immobilized on the AuNPs/3D crumpled graphene surface. The nanoscale deformation caused by thermal expansion effect of flexible graphene/PS can effectively reduce charge screening and the synergistic application of crumpled graphene and AuNPs can promote electron transfer and the graphene carrier concentration, leading to conductivity increase and hydrophilicity enhancement of 3D graphene. In addition, the binding of DA aptamer to DA will cause conformational changes of the aptamer molecule, which affects the charge transport properties of the sensor, thus improving its selectivity and stability. The biosensor can also easily distinguish interfering substances for DA detection in complex components (PBS, human urine, and fetal calf serum) with the detection limits as low as 60, 240 and 316 zM (10−19–10−11 M), respectively. DA released from exocytosis induced by K+ stimulation was selectively detected. The results show that the biosensor can be used as an excellent tool for ultrasensitive molecular recognition and detecting the effects of exogenous reagents on living cells, which is promising for clinical diagnosis and early disease prevention.

A Drug Molecule-Modified Graphene Field-Effect Transistor Nanosensor for Rapid, Label-Free, and Ultrasensitive Detection of Estrogen Receptor α Protein.

Estrogen receptor α (ERα) is an important biomarker in breast cancer diagnosis and treatment. Sensitive and accurate detection of ERα protein expression is crucial in guiding selection of an appropriate therapeutic strategy to improve the effectiveness and prognosis of breast cancer treatment. Herein, we report a liquid-gated graphene field-effect transistor (FET) biosensor that enables rapid, sensitive, and label-free detection of the ERα protein by employing a novel drug molecule as a capture probe. The drug molecule was synthesized and subsequently immobilized onto the sensing surface of the fabricated graphene FET, which was able to distinguish the ERα-positive from the ERα-negative protein. The developed sensor not only demonstrated a low detection limit (LOD: 2.62 fM) but also achieved a fast response to ERα protein samples within 30 min. Moreover, depending on the relationship between the change of dirac point and the ERα protein concentrations, the dissociation constant (Kd) was estimated to be 7.35 ± 0.06 pM, indicating that the drug probe-modified graphene FET had a good affinity with ERα protein. The nanosensor was able to analyze ERα proteins from 36 cell samples lysates. These results show that the graphene FET sensor was able to differentiate between ERα-positive and ERα-negative cells, indicating a promising biosensor for the ultrasensitive and rapid detection of ERα protein without antibody labeling.

Analysis of a Graphene FET-Based Frequency Doubler for Combined Sensing and Modulation through Compact Model Simulation

The ambipolar conduction property of graphene field-effect transistors (GFETs) and the inherent square-like dependence of the drain current on the gate voltage, enable the development of single-device architectures for analog nonlinear radiofrequency (RF) circuits. The use of GFETs in novel RF component topologies allows leveraging graphene’s attractive thermal and mechanical properties to improve the miniaturization and weight reduction of electronic components. These features are specifically appealing for integrated sensing, modulation, and transmission systems. However, given the innovative nature of emerging graphene-based technology, a complete performance analysis of any novel electronic component is essential for customizing the operating conditions accordingly. This paper presents a comprehensive circuital analysis of a GFET-based frequency doubler, exploiting a compact model for GFET circuit simulation to assess the device’s performance parameters, including power conversion gain bandwidth and saturation. The performed analysis proposes to support the design of GFET-based harmonic transponders, offering integrated sensing and signal manipulation capabilities.

Great enhancement of sensitivity for SARS-CoV-2 detection by integrated graphene FET biosensor using ζ potential modulator

By modulating a ζ potential of graphene FET (G-EFT), the sensitivity of G-FET could be enhanced than that without modulation. Therefore, 1 × 107 FFU ml−1 SARS-CoV-2 was detected using G-FET modified with the ζ potential modulator which is the cation polymer with the positive charge. This method is based on the relationship between the surface charge and the sensitivity, in which the highest sensitivity is obtained when the ζ potential is 0 and/or the surface charge is almost 0. In this study, the microfluidic channel was installed on G-FET to get the precise result because it could wash away the free-floating virus and the physical adsorbed virus. 32 G-FETs including the reference FETs were integrated on the silicon substrate and the precise results were obtained by subtracting the noise terms.

Feedback enhanced Dyakonov–Shur instability in graphene field-effect transistors

Graphene devices are known to have the potential to operate THz signals. In particular, graphene field-effect transistors (gFETs) have been proposed as devices to host plasmonic instabilities in the THz realm; for instance, Dyakonov–Shur (DS) instability which relies upon dc excitation. In this work, starting from a hydrodynamical description of the charge carriers, we extend the transmission line description of gFETs to a scheme with a positive feedback loop, also considering the effects of delay, which leads to the transcendental Laplace-transform transfer function, with complex frequency s, with terms of the form e−assechk(s)/s , for a given a∈R0+ arising from the delay time and with k∈N . Applying the conditions for the excitation of DS instability, we report an enhanced voltage gain in the linear regime that is corroborated by our simulations of the nonlinear hydrodynamic model for the charge carriers. This translates to both greater saturation amplitude—often up to 50% increase—and faster growth rate of the self-oscillations. Thus, we bring forth a prospective concept for the realization of a THz oscillator suitable for future plasmonic circuitry.

Exploring the potential of graphene field-effect transistors in biosensing for health and environment

Exploring the potential of graphene field-effect transistors in biosensing for health and environment

Enhancing graphene field-effect transistor biosensors with DNA-mediated protein orientation

Enhancing graphene field-effect transistor biosensors with DNA-mediated protein orientation

A miniaturized biosensor for rapid detection of tetracycline based on a graphene field-effect transistor with an aptamer modified gate

Tetracycline is a broad-spectrum antibiotic for human, poultry and livestock that may cause health damage when enriched in humans. Therefore, it is essential to create a rapid tetracycline assay with high sensitivity, specificity and portability. In this study, a miniaturized tetracycline biosensor based on aptamer-modified graphene field-effect transistor (Apt-SGGT) was fabricated and two detection strategies using transfer characteristic curves and real-time channel current were established for different circumstances. The detection limits of the two strategies were 2.073 pM and 100 pM, respectively. The biosensor also demonstrated outstanding stability, anti-interference and specificity ability. Finally, the biosensor was employed to detect the content of tetracycline in Skim Milk with outstanding recovery rate. We believe that the miniaturized Apt-SGGT biosensor with appropriate detection strategies will provide an ideal portable sensing platform for many important analytes in food with superior selectivity and sensitivity.

High enhancement of sensitivity and reproducibility in label-free SARS-CoV-2 detection with graphene field-effect transistor sensors through precise surface biofunctionalization control

The COVID-19 pandemic has taught us valuable lessons, especially the urgent need for a widespread, rapid and sensitive diagnostic tool. To this, the integration of bidimensional nanomaterials, particularly graphene, into point-of-care biomedical devices is a groundbreaking strategy able to potentially revolutionize the diagnostic landscape. Despite advancements in the fabrication of these biosensors, the relationship between their surface biofunctionalization and sensing performance remains unclear. Here, we demonstrate that the combination of careful sensor fabrication and its precise surface biofunctionalization is crucial for exalting the sensing performances of 2D biosensors. Specifically, we have biofunctionalized Graphene Field-Effect Transistor (GFET) sensors surface through different biochemical reactions to promote either random/heterogeneous or oriented/homogeneous immobilization of the Anti-SARS-CoV-2 spike protein antibody. Each strategy was thoroughly characterized by in-silico simulations, physicochemical and biochemical techniques and electrical characterization. Subsequently, both biosensors were tested in the label-free direct titration of SARS-CoV-2 virus in simulated clinical samples, avoiding sample preprocessing and within short timeframes. Remarkably, the oriented GFET biosensor exhibited significantly enhanced reproducibility and responsiveness, surpassing the detection sensitivity of conventional non-oriented GFET by more than twofold. This breakthrough not only involves direct implications for COVID-19 surveillance and next pandemic preparedness but also clarify an unexplored mechanistic dimension of biosensor research utilizing 2D-nanomaterials.

The effect of external magnetic field on the instability of THz plasma waves in nanoscale graphene field-effect transistors

Abstract The instability of plasma waves in the channel of field-effect transistors will cause the electromagnetic waves with THz frequency. Based on a self-consistent quantum hydrodynamic model, the instability of THz plasmas waves in the channel of graphene field-effect transistors has been investigated with external magnetic field and quantum effects. We analyzed the influence of weak magnetic fields, quantum effects, device size, and temperature on the instability of plasma waves under asymmetric boundary conditions numerically. The study results show that the magnetic fields, quantum effects, and the thickness of the dielectric layer between the gate and the channel can increase the radiation frequency. Additionally, we observed that increase in temperature leads to a decrease in both oscillation frequency and instability increment. The numerical results and accompanying images obtained from our simulations provide support for the above conclusions.