Graphene-based Field-effect Transistors Research Articles

Polyacrylonitrile as an Efficient Transfer Medium for Wafer-Scale Transfer of Graphene.

The disparity between growth substrates and application-specific substrates can be mediated by reliable graphene transfer, the lack of which currently strongly hinders the graphene applications. Conventionally, the removal of soft polymers, that support the graphene during the transfer, would contaminate graphene surface, produce cracks, and leave unprotected graphene surface sensitive to airborne contaminations. In this work, it is found that polyacrylonitrile (PAN) can function as polymer medium for transferring wafer-size graphene, and encapsulating layer to deliver high-performance graphene devices. Therefore, PAN, that is compatible with device fabrication, does not need to be removed for subsequent applications. The crack-free transfer of 4 in. graphene onto SiO2/Si wafers, and the wafer-scale fabrication of graphene-based field-effect transistor arrays with no observed clear doping, uniformly high carrier mobility (≈11000 cm2 V-1 s-1), and long-term stability at room temperature, are achieved. This work presents new concept for designing the transfer process of 2D materials, in which multifunctional polymer can be retained, and offers a reliable method for fabricating wafer-scale devices of 2D materials with outstanding performance.

Transfer-free robust n-type graphene field-effect transistors for digital logic electronic devices

Graphene has been hailed as wonder materials for electronics due to its outstanding charge transport properties. However, its lack of an electronic bandgap has hindered its application to large-scale field-effect transistor (FET) circuits, thereby making bandgap opening a key priority. Further, the fabrication of graphene devices to date conventionally requires the transfer of graphene from its growth substrate to a target substrate, which introduces defects and deteriorates the device performance. To overcome these challenges, we demonstrate a transfer-free approach for the low-temperature growth (∼100 °C) onto TiO2–x (∼10 nm) buffer layer and in-situ nitrogen doping of monolayer graphene, which enables stretchable nitrogen-doped graphene-based FETs with cutting-edge performance and stability. Hybridizing a TiO2–x channel with the nitrogen-doped graphene, nitrogen-doped graphene-based FETs could be achieved with an on-off ratio of ∼2 × 108 and an electron mobility of ∼1,500 cm2V−1s−1 for mainstream digital logic devices. Such devices exhibit high reproducibility and wafer-scale uniformity, thermal, bias-stress, long-term stability, and robust flexibility and stretchability. The scalability and versatility of this transfer-free approach for the flexible and stretchable FETs pave the way for high-performance nitrogen-doped graphene-based digital logic circuits.

Terahertz Detection by Asymmetric Dual Grating Gate Bilayer Graphene FETs with Integrated Bowtie Antenna.

An asymmetric dual-grating gate bilayer graphene-based field effect transistor (ADGG-GFET) with an integrated bowtie antenna was fabricated and its response as a Terahertz (THz) detector was experimentally investigated. The device was cooled down to 4.5 K, and excited at different frequencies (0.15, 0.3 and 0.6 THz) using a THz solid-state source. The integration of the bowtie antenna allowed to obtain a substantial increase in the photocurrent response (up to 8 nA) of the device at the three studied frequencies as compared to similar transistors lacking the integrated antenna (1 nA). The photocurrent increase was observed for all the studied values of the bias voltage applied to both the top and back gates. Besides the action of the antenna that helps the coupling of THz radiation to the transistor channel, the observed enhancement by nearly one order of magnitude of the photoresponse is also related to the modulation of the hole and electron concentration profiles inside the transistor channel by the bias voltages imposed to the top and back gates. The creation of local n and p regions leads to the formation of homojuctions (np, pn or pp+) along the channel that strongly affects the overall photoresponse of the detector. Additionally, the bias of both back and top gates could induce an opening of the gap of the bilayer graphene channel that would also contribute to the photocurrent.

Dual-Mode Graphene Field-Effect Transistor Biosensor with Isothermal Nucleic Acid Amplification.

Despite a substantial increase in testing facilities during the pandemic, access remains a major obstacle, particularly in low-resource and remote areas. This constraint emphasizes the need for high-throughput potential point-of-care diagnostic tools in environments with limited resources. Loop-mediated isothermal amplification (LAMP) is a promising technique, but improvements in sensitivity are needed for accurate detection, especially in scenarios where the virus is present in low quantities. To achieve this objective, we present a highly sensitive detection approach of a dual-mode graphene-based field-effect transistor (G-FET) biosensor with LAMP. The G-FET biosensor, which has a transparent graphene microelectrode array on a glass substrate, detects LAMP products in less than 30 min using both observable color changes and Dirac point voltage measurements, even in samples with low viral concentrations. This dual-mode G-FET biosensor emerges as a potential alternative to conventional RT-PCR for severe acute respiratory syndrome-associated coronavirus (SARS-CoV)-2 detection or point-of-care testing, particularly in resource-constrained scenarios such as developing countries. Moreover, its capacity for colorimetric detection with the naked eye enhances its applicability in diverse settings.

Advancements And Applications of Field-Effect Transistors in Modern Electronics

Field-Effect Transistors (FETs) have evolved as fundamental semiconductor devices pivotal to modern electronics. This paper provides an extensive overview of FETs, encompassing their definition, classification, and historical development. FETs, such as Junction Field-Effect Transistors (JFETs) and Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs), are explained, highlighting their distinct characteristics and applications. Additionally, innovative FET variants like Piezoelectric Field-Effect Transistors (PiezoFETs) and High Electron Mobility Transistors (HEMTs) are explored for their unique attributes and applications. The paper underscores the critical role FETs play in diverse sectors, including low-power digital circuits, RF applications, biosensors, and flexible electronics. It emphasizes their contributions to achieving ultra-low power consumption, rapid analysis, and real-time, label-free diagnostics. The collaborative efforts of experts from various disciplines are emphasized as essential for optimizing FET-based biosensors. Furthermore, the paper emphasizes the exciting potential of graphene-based FETs (G-FETs) in Bioelectronics and their ability to revolutionize point-of-care diagnostics. G-FETs' scalability, low-cost manufacturing, and superior properties make them a promising choice for future healthcare applications.

Toward the Ultimate Limit of Analyte Detection, in Graphene-Based Field-Effect Transistors.

The ultimate sensitivity of field-effect-transistor (FET)-based devices for ionic species detection is of great interest, given that such devices are capable of monitoring single-electron-level modulations. It is shown here, from both theoretical and experimental perspectives, that for such ultimate limits to be approached the thermodynamic as well as kinetic characteristics of the (FET surface)-(linker)-(ion-receptor) ensemble must be considered. The sensitivity was probed in terms of optimal packing of the ensemble, through a minimal charge state/capacitance point of view and atomic force microscopy. Through the fine-tuning of the linker and receptor interaction with the sensing surface, a record limit of detection as well as specificity in the femtomolar range, orders of magnitude better than previously obtained and in excellent accord with prediction, was observed.

Concurrent functional ultrasound imaging with graphene-based DC-coupled electrophysiology as a platform to study slow brain signals and cerebral blood flow under control and pathophysiological brain states.

Current methodology used to investigate how shifts in brain states associated with regional cerebral blood volume (CBV) change in deep brain areas, are limited by either the spatiotemporal resolution of the CBV techniques, and/or compatibility with electrophysiological recordings; particularly in relation to spontaneous brain activity and the study of individual events. Additionally, infraslow brain signals (<0.1 Hz), including spreading depolarisations, DC-shifts and infraslow oscillations (ISO), are poorly captured by traditional AC-coupled electrographic recordings; yet these very slow brain signals can profoundly change CBV. To gain an improved understanding of how infraslow brain signals couple to CBV we present a new method for concurrent CBV with wide bandwidth electrophysiological mapping using simultaneous functional ultrasound imaging (fUS) and graphene-based field effect transistor (gFET) DC-coupled electrophysiological acquisitions. To validate the feasibility of this methodology visually-evoked neurovascular coupling (NVC) responses were examined. gFET recordings are not affected by concurrent fUS imaging, and epidural placement of gFET arrays within the imaging window did not deteriorate fUS signal quality. To examine directly the impact of infra-slow potential shifts on CBV, cortical spreading depolarisations (CSDs) were induced. A biphasic pattern of decreased, followed by increased CBV, propagating throughout the ipsilateral cortex, and a delayed decrease in deeper subcortical brain regions was observed. In a model of acute seizures, CBV oscillations were observed prior to seizure initiation. Individual seizures occurred on the rising phase of both infraslow brain signal and CBV oscillations. When seizures co-occurred with CSDs, CBV responses were larger in amplitude, with delayed CBV decreases in subcortical structures. Overall, our data demonstrate that gFETs are highly compatible with fUS and allow concurrent examination of wide bandwidth electrophysiology and CBV. This graphene-enabled technological advance has the potential to improve our understanding of how infraslow brain signals relate to CBV changes in control and pathological brain states.

Recording physiological and pathological cortical activity and exogenous electric fields using graphene microtransistor arrays in vitro.

Graphene-based solution-gated field-effect transistors (gSGFETs) allow the quantification of the brain's full-band signal. Extracellular alternating current (AC) signals include local field potentials (LFP, population activity within a reach of hundreds of micrometers), multiunit activity (MUA), and ultimately single units. Direct current (DC) potentials are slow brain signals with a frequency under 0.1 Hz, and commonly filtered out by conventional AC amplifiers. This component conveys information about what has been referred to as "infraslow" activity. We used gSGFET arrays to record full-band patterns from both physiological and pathological activity generated by the cerebral cortex. To this end, we used an in vitro preparation of cerebral cortex that generates spontaneous rhythmic activity, such as that occurring in slow wave sleep. This examination extended to experimentally induced pathological activities, including epileptiform discharges and cortical spreading depression. Validation of recordings obtained via gSGFETs, including both AC and DC components, was accomplished by cross-referencing with well-established technologies, thereby quantifying these components across different activity patterns. We then explored an additional gSGFET potential application, which is the measure of externally induced electric fields such as those used in therapeutic neuromodulation in humans. Finally, we tested the gSGFETs in human cortical slices obtained intrasurgically. In conclusion, this study offers a comprehensive characterization of gSGFETs for brain recordings, with a focus on potential clinical applications of this emerging technology.

Graphene and coltan

The clean and renewable energy scenario has gone through a transformation process with the discovery of new generation sources and devices for their storage. Sustainable and efficient solutions are sought to satisfy the growing energy demand of today's population. The environmental problems related to fossil fuels are recognized throughout the world, but to abandon them and for renewable energies to cover current demand, they must not only deliver enough energy but must also be accumulated and transported. In this perspective, batteries play an important role in different areas, from energy storage to powering electronic devices, electric vehicles, etc. Electronic devices use relatively little power, so even small improvements in batteries have driven big changes in their performance and daily use. The functionalities of graphene and coltan make them ideal for a variety of applications, which are at the same time development opportunities for Colombia, such as water purification and desalination, catalyzing systems for the production of hydrogen and foams for lighting purposes, and a rapid heating element; graphene used as a photocatalytic coating material in smart buildings can purify the air in cities; It is also a promising material in the fields of printed electronics, sensors, graphene-based field-effect transistor (GFET) biosensors, optical biosensors, and photovoltaic cells. The possibility of incorporating graphene microchips implanted in teeth for bacterial detection and monitoring of oral hygiene is currently being studied, which could facilitate the study and prevention of periodontal diseases in the future; At the University of Manchester, new graphene condoms were obtained thanks to graphene composite polymers, which provide a higher heat transfer rate, improving sensitivity and the ability to disperse active drugs to prevent sexually transmitted diseases uniformly, pregnancy or even increase sexual pleasure. Graphene sheets have also recently been used to measure blood glucose levels through sweat and deliver pharmacological doses through the skin. This research focuses on a case study: the sizing of a Lithium battery with graphite in both electrodes as an alternative solution for greater energy storage. In this process, the participation of graphite in both electrodes is expanded, specifically in the coating of the cathode through layers to reduce losses and thereby improve battery storage. With this proposal, both the anode and the cathode will be made up of intercalator materials (graphite), different from the metallic lithium anode, which is dangerous, and the Li+1 ion can travel reversibly between them. As a result of the work, the structure of the new battery that will be built and tested in the following stages of the research was designed in SolidWorks software.

Ultrasensitive biosensing platform for Mycobacterium tuberculosis detection based on functionalized graphene devices.

Tuberculosis (TB) has high morbidity as a chronic infectious disease transmitted mainly through the respiratory tract. However, the conventional diagnosis methods for TB are time-consuming and require specialists, making the diagnosis of TB with point-of-care (POC) detection difficult. Here, we developed a graphene-based field-effect transistor (GFET) biosensor for detecting the MPT64 protein of Mycobacterium tuberculosis with high sensitivity as a POC detection platform for TB. For effective conjugation of antibodies, the graphene channels of the GFET were functionalized by immobilizing 1,5-diaminonaphthalene (1,5-DAN) and glutaraldehyde linker molecules onto the graphene surface. The successful immobilization of linker molecules with spatial uniformity on the graphene surface and subsequent antibody conjugation were confirmed by Raman spectroscopy and X-ray photoelectron spectroscopy. The GFET functionalized with MPT64 antibodies showed MPT64 detection with a detection limit of 1fg/mL in real-time, indicating that the GFET biosensor is highly sensitive. Compared to rapid detection tests (RDT) and enzyme-linked immunosorbent assays, the GFET biosensor platform developed in this study showed much higher sensitivity but much smaller dynamic range. Due to its high sensitivity, the GFET biosensor platform can bridge the gap between time-consuming molecular diagnostics and low-sensitivity RDT, potentially aiding in early detection or management of relapses in infectious diseases.

On-Chip Integration of a Plasmonic FET Source and a Nano-Patch Antenna for Efficient Terahertz Wave Radiation.

Graphene-based Field-Effect Transistors (FETs) integrated with microstrip patch antennas offer a promising approach for terahertz signal radiation. In this study, a dual-stage simulation methodology is employed to comprehensively investigate the device's performance. The initial stage, executed in MATLAB, delves into charge transport dynamics within a FET under asymmetric boundary conditions, employing hydrodynamic equations for electron transport in the graphene channel. Electromagnetic field interactions are modeled via Finite-Difference Time-Domain (FDTD) techniques. The second stage, conducted in COMSOL Multiphysics, focuses on the microstrip patch antenna's radiative characteristics. Notably, analysis of the S11 curve reveals minimal reflections at the FET's resonant frequency of 1.34672 THz, indicating efficient impedance matching. Examination of the radiation pattern demonstrates the antenna's favorable directional properties. This research underscores the potential of graphene-based FETs for terahertz applications, offering tunable impedance matching and high radiation efficiency for future terahertz devices.

Simultaneous dual-configuration van der Pauw measurements of gated graphene devices

The van der Pauw technique is the gold standard for measuring the sheet resistance of thin conductors by relying on the combination of two 4-point resistance measurements obtained in different current–voltage probe configurations. The presence of hysteresis and/or time-dependent effects will result in the van der Pauw technique producing inaccurate and misleading results. This limitation can be overcome by simultaneously measuring the two 4-point resistances at different frequencies with two lock-in amplifiers. In this work, we discuss in detail the fundamental requirements and practical considerations for the proper implementation of this measurement technique. Furthermore, we show that the relative deviation between sequential and simultaneous measurements is below 1% in the region of interest for a graphene-based field-effect transistor and 0.04% on average for resistive test structures. The simultaneous van der Pauw technique could therefore become a new standard for reliably assessing the electrical properties of 2D materials and devices.

Rapid isolation of anti-idiotype aptamers for quantification of human monoclonal antibodies against SARS-CoV-2 spike protein

Therapeutic antibodies that block viral entry have already proven to be important, first line drugs for treatments of viral infections. In the case of SARS-CoV-2, combinations of multiple therapeutic antibodies may need to be rapidly identified and formulated in a way that blocks each new, predominant variant of the virus. For efficient introduction of any new antibody combination into patients, it is important to be able to monitor patient-specific pharmacokinetics of individual antibodies, which would include the time course of their specific capacity to block the viral spike proteins. Here, we present three examples of microfluidic-based rapid isolation of companion reagents useful for establishing combination antibody therapies. These reagents are specific three-dimensional imprints of variable regions of individual human monoclonal antibodies against the -spike protein of SARS-CoV-2 virus in the form of oligonucleotide-based ligands (aptamers). We implement these anti-idiotypic aptamers as bioreceptors in graphene-based field-effect transistor sensors to accomplish label free, rapid, and sensitive detection of matching antibodies within minutes. Through this work we have demonstrated the general applicability of anti-idiotype aptamers as capture reagents in quantification of active forms of monoclonal antibodies in complex biological mixtures.

Functionalized-Graphene Field Effect Transistor-Based Biosensor for Ultrasensitive and Label-Free Detection of β-Galactosidase Produced by Escherichia coli.

The detection of β-galactosidase (β-gal) activity produced by Escherichia coli (E. coli) can quickly analyze the pollution degree of seawater bodies in bathing and fishing grounds to avoid large-scale outbreaks of water pollution. Here, a functionalized biosensor based on graphene-based field effect transistor (GFET) modified with heat-denatured casein was developed for the ultrasensitive and label-free detection of the β-gal produced by E. coli in real water samples. The heat-denatured casein coated on the graphene surface, as a probe linker and blocker, plays an important role in fabricating GEFT biosensor. The GFET biosensor response to the β-gal produced by E. coli has a wide concentration dynamic range spanning nine orders of magnitude, in a concentration range of 1 fg·mL-1-100 ng·mL-1, with a limit of detection (LOD) 0.187 fg·mL-1 (1.61 aM). In addition to its attomole sensitivity, the GFET biosensor selectively recognized the β-gal in the water sample and showed good selectivity. Importantly, the detection process of the β-gal produced by E. coli can be completed by a straightforward one-step specific immune recognition reaction. These results demonstrated the usefulness of the approach, meeting environmental monitoring requirements for future use.

Non-linear pH responses of passivated graphene-based field-effect transistors

Graphene-based field-effect transistors (FETs) are suitable for pH sensors due to their outstanding surface chemical properties and its biocompatibility. To improve the devices' stability and pH sensitivity, different sets of dielectric passivation layers composed of monolayer hexagonal boron nitride with and without aluminum oxide layers were evaluated. Non-linearities of the pH response were observed. Heterostructure FETs were derived from subtractive manufacturing of commercially transferred two-dimensional materials on four-inch SiO2/Si wafers via stainless steel and polypropylene masking. Phosphate solutions (10 mM) of varying pH were incubated on bare devices, whereby liquid-gating elucidated linear changes in the Dirac voltage of hBN/graphene (−40 mV/pH) that was smaller than a device consisting only of monolayer graphene (−47 mV/pH). Graphene-based FETs were passivated with aluminum oxide nanofilms via electron beam or atomic layer deposition and were observed to have distinct Raman spectral properties and atomic force microscopy topologies corroborating the hypothesis that morphological differences of the deposited aluminum oxide influence the pH-dependent electrical properties. Atomic layer deposition of aluminum oxide on the 2D sensing areas resulted in non-linear shifting of the Dirac voltage with respect to pH that evolved as a function of deposition thickness and was distinct between graphene with and without hexagonal boron nitride as a capping monolayer. The non-linear response of varying thickness of AlxOy on graphene-based FETs was progressively reduced upon basic wet etching of the AlxOy. Overall, passivated graphene-based transistors exhibit deposition-dependent pH responses.

(Invited) CRISPR-Powered Graphene Electronics for Amplification Free Genotyping and CRISPR Editing Quality Control

The discovery of CRISPR technology has revolutionized the fields of transcriptional activation and repression, genome editing, gene-based therapeutics, and diagnostics. The applications of this technology have been rapidly expanding as researchers continue to discover new Cas enzymes, engineer high fidelity Cas orthologs, and modify and synthesize guide RNAs to efficiently direct these Cas enzymes to their targets. In this talk, we will introduce the first-generation DNA biosensors that combine CRISPR technology with the ultra-sensitivity of graphene-based field effect transistors (gFETs) to detect target DNA sequences within the whole genome without the need for DNA amplification. This technology, termed CRISPR-Chip™, utilizes the genome searching capability of Cas and reprogrammable RNA molecule to unzip the double-stranded DNA and bind to its target. This binding event causes a change in graphene conductivity which can be detected in real-time within the gFET construct. CRISPR-Chip was utilized to detect target genes within clinical samples obtained from patients with Duchenne Muscular Dystrophy (Cover of Nature BME-2019), and single cell point mutations in Sickle cell disease and ALS without the need for amplification (Nature BME 2021), within less than 30 minutes. The applications of this technology platform go beyond diagnostics. CRISPR-Chip can provide greater insights on the mechanism of CRISPR and can lead to safe and more effective utilization of this gene editing technology for therapeutic applications. Figure 1

Geometrical Characterisation of TiO2-rGO Field-Effect Transistor as a Platform for Biosensing Applications.

The performance of the graphene-based field-effect transistor (FET) as a biosensor is based on the output drain current (Id). In this work, the signal-to-noise ratio (SNR) was investigated to obtain a high-performance device that produces a higher Id value. Using the finite element method, a novel top-gate FET was developed in a three-dimensional (3D) simulation model with the titanium dioxide-reduced graphene oxide (TiO2-rGO) nanocomposite as the transducer material, which acts as a platform for biosensing application. Using the Taguchi mixed-level method in Minitab software (Version 16.1.1), eighteen 3D models were designed based on an orthogonal array L18 (6134), with five factors, and three and six levels. The parameters considered were the channel length, electrode length, electrode width, electrode thickness and electrode type. The device was fabricated using the conventional photolithography patterning technique and the metal lift-off method. The material was synthesised using the modified sol-gel method and spin-coated on top of the device. According to the results of the ANOVA, the channel length contributed the most, with 63.11%, indicating that it was the most significant factor in producing a higher Id value. The optimum condition for the highest Id value was at a channel length of 3 µm and an electrode size of 3 µm × 20 µm, with a thickness of 50 nm for the Ag electrode. The electrical measurement in both the simulation and experiment under optimal conditions showed a similar trend, and the difference between the curves was calculated to be 28.7%. Raman analyses were performed to validate the quality of TiO2-rGO.

Biosensor Based on Graphene Directly Grown by MW-PECVD for Detection of COVID-19 Spike (S) Protein and Its Entry Receptor ACE2.

Biosensors based on graphene field-effect transistors (G-FET) for detecting COVID-19 spike S protein and its receptor ACE2 were reported. The graphene, directly synthesized on SiO2/Si substrate by microwave plasma-enhanced chemical vapor deposition (MW-PECVD), was used for FET biosensor fabrication. The commercial graphene, CVD-grown on a copper substrate and subsequently transferred onto a glass substrate, was applied for comparison purposes. The graphene structure and surface morphology were studied by Raman scattering spectroscopy and atomic force microscope. Graphene surfaces were functionalized by an aromatic molecule PBASE (1-pyrenebutanoic acid succinimidyl ester), and subsequent immobilization of the receptor angiotensin-converting enzyme 2 (ACE2) was performed. A microfluidic system was developed, and transfer curves of liquid-gated FET were measured after each graphene surface modification procedure to investigate ACE2 immobilization by varying its concentration and subsequent spike S protein detection. The directly synthesized graphene FET sensitivity to the receptor ACE2, evaluated in terms of the Dirac voltage shift, exceeded the sensitivity of the transferred commercial graphene-based FET. The concentration of the spike S protein was detected in the range of 10 ag/mL up to 10 μg/mL by using a developed microfluidic system and measuring the transfer characteristics of the liquid-gated G-FETs. It was found that the shift of the Dirac voltage depends on the spike S concentration and was 27 mV with saturation at 10 pg/mL for directly synthesized G-FET biosensor, while for transferred G-FET, the maximal shift of 70 mV was obtained at 10 μg/mL with a tendency of saturation at 10 ng/mL. The detection limit as low as 10 ag/mL was achieved for both G-FETs. The sensitivity of the biosensors at spike S concentration of 10 pg/mL measured as relative current change at a constant gate voltage corresponding to the highest transconductance of the G-FETs was found at 5.6% and 8.8% for directly synthesized and transferred graphene biosensors, respectively. Thus, MW-PECVD-synthesized graphene-based biosensor demonstrating high sensitivity and low detection limit has excellent potential for applications in COVID-19 diagnostics.

Scalable graphene sensor array for real-time toxins monitoring in flowing water

Risk management for drinking water often requires continuous monitoring of various toxins in flowing water. While they can be readily integrated with existing water infrastructure, two-dimensional (2D) electronic sensors often suffer from device-to-device variations due to the lack of an effective strategy for identifying faulty devices from preselected uniform devices based on electronic properties alone, resulting in sensor inaccuracy and thus slowing down their real-world applications. Here, we report the combination of wet transfer, impedance and noise measurements, and machine learning to facilitate the scalable nanofabrication of graphene-based field-effect transistor (GFET) sensor arrays and the efficient identification of faulty devices. Our sensors were able to perform real-time detection of heavy-metal ions (lead and mercury) and E. coli bacteria simultaneously in flowing tap water. This study offers a reliable quality control protocol to increase the potential of electronic sensors for monitoring pollutants in flowing water.

Ultra-sensitive and label-free detection of Escherichia coli O157:H7 using graphene-based field effect transistor modified with heat-denatured casein

Sensitive detection of Escherichia coli O157:H7 (E. coli O157:H7) in suspected water samples is critical for containing the water-borne outbreak, which may cause acute diarrhea and intestinal bleeding. Here, we reported an improved graphene-based field effect transistor modified with heat-denatured casein (GFET) for sensitively detecting E. coli O157:H7 in real water samples. The heat-denatured casein coated on the graphene surface was served as a probe linker to bind with the specific antibody of E. coli O157:H7, and as a blocker to avoid the interference signal arising from the non-specific adsorption between the graphene surface and impurities in real water samples. The GFET biosensor provided a wide concentration range of 1–107 CFU·mL−1 for cultured E. coli O157:H7 with a detection limit of 1 CFU·mL−1. This developed GFET biosensor can also discriminate E. coli O157:H7 from other interfering substances with a high selectivity. In addition, correlation analysis of the E. coli O157:H7 in real samples using the GFET biosensor were proved the high agreement with enzyme-linked immunosorbent assay. The mass-produced GFET biosensor can achieve ultra-sensitive and label-free detection for the E. coli O157:H7 in water sample, promising prospective environmental monitoring application in the future.