A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-dendity non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric Bi 3.61 Nd 0.39 Ti₃O 12 (BNdT) thin films were prepared on Pt(111)/TiO₂/SiO₂/Si substrates by the liquid delivery system MOCVD method. In these experiments, Bi(ph)₃, Nd(TMHD)₃ and Ti(O i Pr)₂(TMHD)₂ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately 600℃ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was 31.67 μC/㎠ at an applied voltage of 5 V.