Glancing Incidence X-ray Diffraction Research Articles

Improvement of remanent polarization of CeO2–HfO2 solid solution thin films on Si substrates by chemical solution deposition

CeO2–HfO2 solid solution thin films, Hf1−xCexO2, are fabricated on n+-Si(100) substrates by the chemical solution deposition method. The effects of the CeO2 content and annealing temperature on the structure and ferroelectric properties of Hf1−xCexO2 are studied. The structural properties are investigated by glancing incidence x-ray diffraction and high resolution transmission electron microscopy, while the chemical states are examined by x-ray photoelectron spectroscopy. The results reveal that the admixture of CeO2 could effectively induce the ferroelectric phase. For Hf0.85Ce0.15O2 fabricated at an annealing temperature of 800 °C, an enhanced remanent polarization (Pr) of ∼20 μC/cm2 (after correction for leakage and parasitics) could be attained. Moreover, Hf0.85Ce0.15O2 demonstrates good endurance behavior, that the polarization does not show obvious degradation over 1 × 109 bipolar switching cycles, at an electric field of 2.9 MV/cm and a frequency of 100 kHz. This work highlights the importance of CeO2–HfO2 solid solution films in HfO2-based ferroelectric thin films.

Energetic argon beam stimulated growth of plasmonic silver nanoparticles in Ag+-exchanged soda glass: A study on the structural, optical, photoluminescence and electrical behavior

Fabrication of silver nanoparticles inside soda glass by Ar+ irradiation at an incidence angle of 40° has been presented. Emergence of surface plasmon resonance peak at 410.5 nm for the specimen fabricated by implantation to 5×1016 Ar+ cm−2 at an incidence angle of 40° in optical absorption spectrum provides the signature of silver nanoparticles and the data obtained was further analyzed to evaluate refractive index, optical energy gap and Urbach’s energy of the specimens. Glancing incidence X-ray diffraction study displayed that silver nanoparticles are in face-centered cubic geometry. Their shape, size and distribution in the glass matrix were further probed using transmission electron microscopy and field emission scanning electron microscopy. Rutherford back scattering spectrometry measurement revealed that a 180 nm thick layer of silver nanoparticles is formed in the near surface layers of glass. X-ray photoelectron spectroscopy and photoluminescence spectroscopy suggested that after ion-exchange silver is primarily in the ionic form and after Ar+ implantation at an angle of 40° it acquires metallic form which further nucleate and grow to form silver nanoparticles in glass.

RF Sputtered MoO3 Thin Film on Si (100) for Gas Sensing Applications

Molybdenum Trioxide (MoO3) films are grown on Si(100) substrates by reactive RF magnetron sputtering in plasma containing a mixture of Argon and Oxygen, using a pure Molybdenum target. In this paper, we report the deposition of (MoO3) films on Si(100) substrates under varying gas flow (O2 + Ar gas) (20 sccm to 30 sccm with the duration of deposition~ 1hr) by RF reactive magnetron sputtering at room temperature. To get crystalline MoO3 films annealing in O2 environment at 500 °C for 4 h is done. Phase formation and orientation of the film is characterized by Glancing incidence X-ray diffraction (GIXRD). The identification of the orthorhombic MoO3 phase is investigated by XRD and Raman spectroscopy. Raman lines at 819 cm-1 and 995 cm-1 are due to the (A1g, B1g) symmetric stretching (Mo-O–Mo) bond and asymmetric stretching band (Mo=O) respectively. Surface morphology and cross-sectional image of the deposited thin films were investigated by FE-SEM image. UV-Visible reflectance and cross-sectional FE-SEM image confirm the thickness of the MoO3 films with oxygen-rich and oxygen deficient phase formation occur. Reverse leakage current density of 20 sccm 1hr sample is low (1×10-6 mA/cm2) as compared to 30 sccm 1hr sample (1×10-3 mA/cm2). The higher leakage is due to crack formation during the ex-situ annealing of MoO3 films. This MoO3 films can be used in Gas sensing and switching devices.

Argon beam prompted alterations in morphological, structural, optical and electrical properties of Na+[formula omitted]Ag+ ion-exchanged glass

Synthesis of Ag nanoparticles embedded soda lime glass with a 200 keV Argon ion beam at an off-normal angle of 30° has been presented in this report. Formation of nanoparticles was substantiated by transmission electron microscopy (TEM), field emission scanning electron microscopy (FESEM), glancing incidence X-ray diffraction (GIXRD) and UV–Visible absorption spectroscopy. Atomic force microscopy (AFM) was used to study topography and evolution of surface roughness of synthesized samples with dose. Structural modifications induced in glass on embedding Ag nanoparticles were investigated using Fourier transform infrared spectroscopy (FTIR), Raman spectroscopy, Rutherford back scattering spectrometry (RBS) and X-ray photoelectron spectroscopy (XPS). UV–Visible spectroscopy results were further analyzed for computing different optical constants like refractive index, optical energy gap and Urbach energy. UV–Visible transmission spectra revealed the presence of a narrow band in the UV region which hints towards the utility of such samples as UV based narrow bandpass filters. Emission bands observed in photoluminescence spectra originated due to 3DJ (J=1,2,3)→1S0 and 1D2→1S0 transitions amid the energy levels of Ag+ ions and Ag+ pairs. The current-voltage characteristics of the samples were further examined to study their electrical behavior and revealed that the electrical conductivity increased 5 times for the sample fabricated at highest dose in comparison to the pristine glass.

White-light interferometry for early-stage metal oxide growth characterization

Oxidation of metals can provide a functional oxide film or an oxide layer that can lead to material degradation causing performance limiting concerns. Because of the technological and economic impacts of oxidation, understanding early-stage oxidation growth and its mechanisms is of high importance. Unfortunately, poor empirical data during early-stage oxidation has left our current understanding of oxidation incomplete and woefully inadequate. Measurement techniques previously used for oxidation kinetics characterization include microbalance, x-ray diffraction, Fourier-transform infrared spectroscopy, and spectroscopic ellipsometry. However, these techniques lack the necessary time-resolution or vertical resolution in addition to not providing any spatial data, which is essential to early-stage oxidation studies to understand both oxidation kinetics and mechanisms. A novel rapid and surface-sensitive data collection technique that provides three-dimensional spatial data of a growing oxide layer with sub-nanometer thickness resolution using white-light interferometry has been developed here. This technique will be the first technique capable of providing real-time spatial results of early-stage oxidation growth. The effectiveness of this characterization tool is shown by observing the early-stage oxidation kinetics and film cracking of uranium heated to 90 °C under 500 torr of pure O2. Initially a parabolic oxidation growth is observed. Once the oxide layer reaches ≈30 nm, the epitaxial stresses between the uranium substrate and oxide film layer causes localized cracking in addition to the observed transition of the parabolic growth rate to a linear growth rate. The results of the white-light interferometry are verified by glancing incidence x-ray diffraction.

Phase transformation on zinc selenide thin films deposited by photo-assisted chemical bath method: The effect of annealing temperature

Zinc selenide (ZnSe) thin films have been deposited on glass substrates via photo-assisted chemical bath deposition technique. The films were annealed at different temperatures 100, 150, 200, 250, 300, 350 and 400 °C in air for 2 h and were characterized using different techniques. The glancing incidence X-ray diffraction (GIXRD) showed that the as-deposited sample and films annealed from 100 to 200 °C contained secondary peaks due to combine effects of ZnSe and unreacted Zn and Se. The films annealed at 250 and 300 °C showed pure hexagonal ZnSe phase while those annealed at 350 and 400 °C changed to hexagonal ZnO. The estimated crystallite sizes were found to decrease in size with increased annealing temperature. The change in phase was also observed in Raman spectroscopy, scanning electron microscopy and UV–visible spectroscopy. Atomic force micrographs showed decrease in surface roughness with an increase in the annealing temperature. Energy band gap increased with annealing temperature. Three emission bands due to band-edge and defect levels were observed in the photoluminescence spectroscopy. The lifetime decay did not show any ordered dependence on the annealing temperature. The sample annealed at 250 °C was considered because its parameters such as the diffraction angle, lattice constants and energy band gap were closest to the bulk ZnSe. The Commision Internationale de L'Eclairage showed blue emission color with color purity between 56 and 97%. The films especially 250 °C sample was recommended for lighting applications.

Characterization of lattice parameters gradient of Cu(In1-xGax)Se2 absorbing layer in thin-film solar cell by glancing incidence X-ray diffraction technique

In or Ga gradients in the Cu(In1-xGax)Se2 (CIGS) absorbing layer lead to change the lattice parameters of the absorbing layer, giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell. We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction (GIXRD) technique, and then investigate the bandgap grading of the CIGS absorbing layer. When the glancing incident angle increased from 0.50 to 5.00°, the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3) to 5.6905(2) Å, and 11.3917(3) to 11.2114(2) Å, respectively. The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the compositionof In or Ga with depth in the absorbing layer. The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site. According to the results of the depth profile of the refined parameters using GIXRD data, the bandgap of the CIGS absorber layer was graded over a range of 1.222–1.532 eV. This approach allows to determine the In or Ga gradients in the CIGS absorbing layer, and to nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.

The effect of annealing time on zinc selenide thin films deposited by photo-assisted chemical bath deposition

Zinc selenide (ZnSe) thin films were deposited on non-conducting glass substrates at 80 °C for 2.0 h in an alkaline medium using photo-assisted chemical bath deposition (PCBD). The films were annealed in air at 300 °C for different time intervals ranging from 0 to 4.0 h. The annealing time had a significant effect on the structure, morphology and optical properties of the deposited films. The glancing incidence X-ray diffraction (GIXRD) analysis confirmed polycrystalline films with a hexagonal wurtzite structure. The estimated crystallite size decreased with increasing annealing time. The as-deposited sample showed secondary peaks in the GIXRD and Raman spectroscopy due to unreacted selenium, which disappeared after annealing. Changes in surface morphology with increasing annealing time were observed using scanning electron microscopy. The energy dispersive X-ray spectrometer results showed an increase in zinc with a decrease in selenium for longer annealing times. The atomic force microscopy showed that the estimated films surface roughness decreased during annealing. Blue shifts in the absorption spectra and an increase in the energy bandgaps were observed with an increase in annealing time, together with an increase in optical transmittance. Photoluminescence spectroscopy revealed blue, green and red emission peaks, which were all attributed to the intrinsic defects within the ZnSe. The estimated decay lifetime showed that the average decay lifetime of the films increased with annealing time. Annealing for 3.0 h was found to be the optimum based on the response of the investigated properties.

Strain gauge properties of Pd+-ion-implanted polymer

Pd+ ions (90 keV) were implanted at normal incidence and at room temperature in different highly insulating (>200 GΩ) thermoplastic polymers (poly(methyl methacrylate), polypropylene, polyethylene terephthalate glycol-modified, and polycarbonate). At high fluence and optimized process parameters, the ion implantation gives rise to the formation of a nanocomposite thin surface layer constituted by Pd nanoclusters and carbonaceous material (nanographite/amorphous carbon). The morphological, microstructural, and microanalytical properties of the nanocomposite layers were investigated by He-ion microscopy, glancing incidence X-ray diffraction, and Raman scattering, respectively. The electrical properties were characterized by resistance, van der Pauw, and Hall measurements. We performed accurate simultaneous deformation/bending experiments and electrical resistance measurements. We show that the electrical resistance varies linearly with the mechanical deformation (beam deflection) applied. The experimental results are interpreted by “hopping conductivity” model considering the nanostructure configuration of the nanocomposite layers. A gauge factor in the range between 4 and 8, depending on the ion-implanted polymer, was obtained for prototype strain gauge devices.

Effect of hydrazine hydrate as complexing agent in the synthesis of zinc selenide thin films by chemical bath deposition

ZnSe thin films were deposited using hydrazine hydrate (HH) as the only complexing agent. The deposition was carried out on glass substrates in an alkaline medium at low temperature using the chemical bath deposition method. The films were annealed at 300 °C for 2 h. The effects of varying the HH volumes on the structural and optical properties of the films were investigated. The investigations were based on glancing incidence X-ray diffraction, Raman spectroscopy, Field emission scanning electron microscopy, energy dispersive X-ray spectroscopy (EDS), UV-Visible spectrophotometry, and photoluminescence (PL) spectroscopy. The results revealed that the ZnSe films were of the wurzite structure. Raman spectra showed longitudinal optical vibrational peaks with intense peak at around 251 cm−1. There were fluctuations in the Raman peaks intensities. However, the intensity of the 20 mL HH sample emerged the highest. The morphology of the thin films changed from spherical grains to nanoflakes as the HH volume was increased from 5 to 35 mL, respectively. EDS of the films confirmed the presence of Zn and Se. The bandgaps of the films decreased with an increase in the HH volume. PL measurements indicated two emission peaks at 530 and 678 nm when excited at 325 nm. These emission peaks are attributed to the intrinsic intra-bandgap defects. The intensities of the peaks increased with an increase in the HH volume. The commission Internationale de l'Elcairage color coordinates confirmed that the deposited ZnSe films exhibited green-red emission and the emission color was influenced by varying the HH volumes.

Synthesis of Nanoporous TiO2 with the Use of Diluted Hydrogen Peroxide Solution and Its Application in Gas Sensing

The chemical routes of metal oxidation in presence of hydrogen peroxide solutions are tailor-made for the synthesis of biocompatible metal oxide surfaces with clean intermediate and end products, such as oxides, hydroxides, hydrogen and water. The hydrolysis of titanium in hydrogen peroxide solutions is particularly interesting for medical applications, forming micro- and nanoscale titania surfaces. In this paper, the content of the hydrolysis solution is revised, allowing the fabrication of gas sensor devices based on nanoporous titania. Nanopore and microcrack formations were discussed in detail by monitoring the structural changes on the thin film surface with field-emission scanning electron microscopy (FE-SEM). A stable rutile crystalline phase was detected by glancing incidence X-ray diffraction (GI-XRD) measurement after repetitive hydrothermal processes. Electrical conductance measurements were carried out at high temperatures (400–600 °C) under humid airflow (40% RH@20 °C) with the injection of various concentrations of a wide set of test compounds (C2H3N, CO, H2, NO2, C2H6O), to observe the sensing capabilities of the material. Furthermore, the humidity effects on the sensing properties toward H2, CO, and C2H6O have been discussed.

Annealing time induced roughening in ZnO thin films: A fractal and multifractal assessment

The residual surface micro-morphology and roughening of the sol-gel spin-coated ZnO thin films annealed at 500 °C for 1, 2, 3, and 4 h have been studied in the present work. The glancing incidence x-ray diffraction (GIXRD) patterns show that all the annealed films have a polycrystalline hexagonal wurtzite structure irrespective of the annealing times used in this work. The tensile stress developed, amorphization took place and accordingly the orientation of micro-crystallites changed with the increasing annealing time. The inadequacy of the conventional statistical parameters for surface quality assessment in the sense of both spatial and vertical complexity is insisted analysis of surface morphology with the help of fractal geometrical concepts. The monofractal assessment reveals the statistical self-similarity and long-range correlation properties of surface heights of the ZnO thin films annealed for different time spans. A persistent surface appears in the annealed films and persistency remains for all the annealing times used in this work. The highest persistency has been observed in 2 h annealed films. The fractal dimensions have been found to be inhomogeneous throughout the surface. Therefore, the multifractal technique is employed to understand the local scaling of the surface morphology. The least strength of multifractality and thereby, the lowest surface complexity have been observed in 2 h annealed films. The micro-morphological alterations with the annealing times are discussed in terms of the stress-induced surface instabilities, amorphization, and mass diffusion. Thus, the present work promotes a vigorous understanding of the residual surface micromorphology and roughening in commercially attractive solution-processed ZnO thin films using the monofractal and multifractal techniques. These methods could also be implemented to other solution-processed multifunctional materials to have a better understanding of their residual surface growth, roughening, and micro-morphology.

Effect of Ti+N and Zr+N ions implantation on mechanical and corrosion performance of carburized layer

Ti+N and Zr+N ions were implanted into the carburized AISI 9310 layer to improve surface properties. The microstructure, nanomechanics, tribology and corrosion properties were investigated by transmission electron microscopy, glancing incidence X-ray diffraction, nanoindentation, tribology analysis and corrosion test. The results showed that there were a large number of dense metal (Ti or Zr) ceramic phases with ultrahigh nanomechanical property and wear resistance in Ti+N and Zr+N ions implantation layers. Simultaneously, the corrosion type of the carburized layer changed from general corrosion to the localized and pitting corrosion after Ti+N and Zr+N ions implantation. Due to favorable corrosion resistance of the ceramic phases, the corrosion property of Ti+N and Zr+N ions implantation layers have been improved significantly. Comparing with these two ions implantation (Ti+N and Zr+N) layers, the Ti+N ions implantation layer exhibited better nanomechanical property, while the Zr+N ions implantation layer displayed superior tribology and corrosion properties attributed to element composition and new phase structure.

Enhancement of hydroxyapatite dissolution through structure modification by Krypton ion irradiation

Hydroxyapatite (HA) synthesized by a wet chemical route was subjected to heavy ion irradiation, using 4 MeV Krypton ion (Kr17+) with ion fluence ranging from 1 × 1013 to 1 × 1015 ions/cm2. Glancing incidence X-ray diffraction (GIXRD) results confirmed the phase purity of irradiated HA with a moderate contraction in lattice parameters, and further indicated the irradiation-induced structural disorder, evidenced by broadening of the diffraction peaks. High-resolution transmission electron microscopy (HRTEM) observations indicated that the applied Kr irradiation induced significant damage in the hydroxyapatite lattice. Specifically, cavities were observed with their diameter and density varying with the irradiation fluences, while a radiation-induced crystalline-to-amorphous transition with increasing ion dose was identified. Raman and X-ray photoelectron spectroscopy (XPS) analysis further indicated the presence of irradiation-induced defects. Ion release from pristine and irradiated materials following immersion in Tris (pH 7.4, 37 ℃) buffer showed that dissolution in vitro was enhanced by irradiation, reaching a peak at 0.1dpa. We examined the effects of irradiation on the early stages of the mouse osteoblast-like cells (MC3T3-E) response. A cell counting kit-8 assay (CCK-8 test) was carried out to investigate the cytotoxicity of samples, and viable cells can be observed on the irradiated materials.

On the study of microstructure of annealed C+and H2+ Co_implanted 6H-SiC

The microstructure of annealed single crystal 6H-SiC implanted with C+ and H2+ ions were characterized by glancing incidence X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM). After annealing, cracks were observed to form in the surface of C+ ions implanted sample. However, blisters as circular clusters were observed in the surface of the H2+ ions implanted and annealed sample. Compared with the samples implanted with only single type of ions, both cracks and blisters with different morphologies were found to appear in the surface of C+ and H2+ ions co-implanted sample. The morphology and distribution of blisters and exfoliations in the C+ and H2+ co-implanted samples were more irregular and inhomogeneous than those in the H2+ ions implanted sample, which can be attributed to the randomly distributed columnar crystals formed during the annealing process. The grain boundaries of these columnar crystals could be used as migration channels for hydrogen, which influence the size evolution of blisters and exfoliations in the sample surface during annealing process.

Band-gap depth profile of Cu(In1−x Ga x )Se2 absorbing layer in thin-film solar cell by glancing-incidence X-ray diffraction

Band-gap depth profile of Cu(In_1−<i>x</i>Ga_<i>x</i>)Se₂ absorbing layer in thin-film solar cell by glancing-incidence X-ray diffraction

Comparative study of photo- and non-photo-assisted chemical bath deposition of Zinc Selenide thin films using different volumes of hydrazine hydrate

Abstract Photo-assisted chemical bath deposition (PCBD) and non-photo-assisted chemical bath deposition (NPCBD) methods were used to deposit ZnSe thin films on non-conducting glass substrates in an alkaline medium. Zinc acetate and sodium selenosulfatewere the starting precursors. Hydrazine hydrate (HH) was used as ligand for the deposition. Different HH volumes between 5 and 35 mL were used. The films were annealed at 300 °C for 2 h. The Glancing incidence X-ray diffraction results revealed hexagonal wurtzite structure. The estimated crystallites sizes were in the range of 4–14 nm and 6–19 nm for the NPCBD and PCBD, respectively. Changes in the films morphology were observed in both of the deposition methods. Energy dispersive X-ray analysis confirmed the presence of the Zn and Se. Raman spectroscopy also confirmed peaks of ZnSe.The bandgaps of the films were ranged from 1.5 - 2.8 eV in NPCBD and 2.3–2.6 eV in PCBD. Photoluminescence spectroscopy measurements revealed green-red emission which did not show significant changes with deposition method.

Optimization and Characterization of Si3N4 Layer for Wear Resistant Ti-Al-N/Si3N4 Nano- Composite Coatings

Machining Custom 465 steel at high speeds usually at 20-30% lower than ordinary stainless steel leads to excessive tool wear and thereby affecting the tool life. In such case tool life can be increased by coating a nano-composite layer of Ti-Al-N/Si3N4 which exhibits high strength, hardness, toughness, resistance to oxidation and thermal shock. Particularly, Si3N4serves as an interfacial phase in nano-composite layer is thermodynamically stable phase at high temperatures up to 1850˚C along with high oxidation resistance which might reduce the heat flow between tool-workpiece interfaces leading to high thermal stability of cutting tool. Physical vapor deposition techniques can be used to develop Ti-Al-N/Si3N4 nano-composite coating which involves typically 81 trial depositions in order to obtain optimized process parameters for Si3N4. Here we attempt to reduce the number of trails by design and optimization of process parameters which was efficiently achieved at faster rate by applying the Taguchi design. In present work, we used Taguchi orthogonal (L9) array to conduct the 9 experiments and obtained optimum process parameters for Si3N4 coating. Based on the design we deposited Si3N4nanocoating using RF magnetron sputtering process with 4 factor and 3 level process parameters namely, Ar:N2 gas mixture, RF Power, deposition time, and deposition pressure on high speed steel (HSS), tungsten carbide (WC) and Si (100) substrates. Atomic Force Microscopy (AFM) studies were carried for surface roughness, topography, and phase contrast imaging. Glancing incidence X-ray diffraction (GIXRD) studies were performed for the identification and quantification of crystalline and amorphous phase. Field Emission Scanning Electron Microscopy (FE-SEM) studies were performed for the film thickness and grain size of Si3N4layers.

Molecular Engineering of a Donor-Acceptor Polymer To Realize Single Band Absorption toward a Red-Selective Thin-Film Organic Photodiode.

Herein, we explore the strategy of realizing a red-selective thin-film organic photodiode (OPD) by synthesizing a new copolymer with a highly selective red-absorption feature. PCZ-Th-DPP, with phenanthrocarbazole (PCZ) and diketopyrrolopyrrole (DPP) as donor and acceptor units, respectively, was strategically designed/synthesized based on a time-dependent density functional theory calculation, which predicted the significant suppression of the band II absorption of PCZ-Th-DPP due to the extremely efficient intramolecular charge transfer. We demonstrate that the synthesized PCZ-Th-DPP exhibits not only a high absorption coefficient within the red-selective band I region, as theoretically predicted, but also a preferential face-on intermolecular structure in the thin-film state, which is beneficial for vertical charge extraction as an outcome of a glancing incidence X-ray diffraction study. By employing PCZ-Th-DPP as a photoactive layer of Schottky OPD, to fully match its absorption characteristic to the spectral response of the red-selective OPD, we demonstrate a genuine red-selective specific detectivity in the order of 1012 Jones while maintaining a thin active layer thickness of ∼300 nm. This work demonstrates the possibility of realizing a full color image sensor with a synthetic approach to the constituting active layers without optical manipulation.

Tribological properties and corrosion resistance of CrSiN coatings prepared via hybrid HiPIMS and DCMS

CrSiN coatings have been prepared with hybrid high power impulse magnetron sputtering(HiPIMS) and direct current magnetron sputtering(DCMS). The microstructure and phase composition were analyzed by scanning electron microscopy (SEM) and glancing incidence x-ray diffraction (GIXRD). The tribological properties were determined by means of pin on disk wear test. Electrochemical workstation was used to characterize the corrosion resistance of CrSiN coatings. Results show that, the unit power deposition rate of CrSiN coating prepared by a Cr target in DC mode and a Si3N4 target in radio frequency(RF) mode (DCMS + RF) is 5.5 nm/(min · kW), however, that of using a Cr target in HiPIMS mode and a Si3N4 target in RF mode (HiPIMS + RF) reach only 3.0 nm/(min · kW). The friction coefficient of CrSiN coatings with different processes is within the range of 0.4–0.55, but the wear rate with HiPIMS + RF process is the lowest, 5.0 × 10−6 mm3 · N−1 · m−1. The CrSiN coating deposited with HiPIMS + RF have the highest elastic modulus and hardness of 241.7 GPa and 11.3 GPa, respectively. The CrSiN coating with HiPIMS + RF exhibits a denser columnar structure, and owns the best corrosion performance and the lowest corrosion current density of 3.21 × 10−7 A · cm−2 and the protection efficiency of 92.42%.