Giant Magnetoresistance Research Articles

First principle study of the CuCrTiS[formula omitted]: Spin-glass state and electronic transport

Magnetothermopower and giant magnetoresistance in spinel-type compound CuCrTiS4 has attracted a lot of attention recently. Ab initio computations of the electronic structure and the Seebeck coefficient of the CuCrTiS4 structure are reported. The mixed nature of magnetism was identified to be caused by the competition between ferromagnetic and anti-ferromagnetic impacts, with the corresponding determined exchanged parameters: J1=1.018 meV, J2=−5.59 meV, JL=0.22 meV. Seebeck coefficient and electrical conductivity of the CuCrTiS4 compound in the temperature range of 5−300 K along with its low temperature thermoelectric capabilities were calculated. The direct 0.4 eV band gap was determined by taking in account strong correlations effect via the Hubbard correction. The calculated Seebeck coefficient is in a good agreement with the available experimental data for a wide carriers concentrations range. This first detailed study of CuCrTiS4 reports that this thiospinel poses a mixed nature of magnetism along with unique thermoelectric properties.

An Extensive Review of MR Sensors with Design and Characteristic Evaluation of Three-layered TMR Sensor

Abstract: The reliability and efficacy of sensor-based automated systems have improved due to the proliferation of electric vehicles, renewable sources, and integrated systems in power industries extensively. This has been accomplished by increasing the power density and decreasing the volume of the system. Background: Mathematical estimation and comparative analysis of the physical factors result in massive usage of operational matrices measured using sensors. Magnetic field sensors, used in industries and biomedical applications, have a high level of precision in the evaluation of measurements. In order to extract the measured parameters such as sensitivity, accuracy, operating cost, the linear range of operation, and power utilisation, these sensors adhere to the physical constraints during their nominal working conditions. The characteristics of the aforementioned sensors are enumerated in detail in this article. Objective: This objective is highly focused on providing a comprehensive overview of classification and the properties of Hall-Effect, anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR), and tunnelling magnetoresistive (TMR) sensors. The dissertation on its properties concludes that TMR is more reliable and sensitive in variable operating conditions. Methods: The methods for selecting the sensors for an application are confined to voltage fluctuations and sensitivity. A three-layered TMR sensor with two magnetic layers and an insulator in between is proposed as a significant advancement compared to the literature. The micromagnetic simulation is carried out at room temperature for a three-layered TMR made up of neodymium alloy, magnesium oxide, and cobalt platinum alloy. Conclusion: Based on the studies executed, it is determined that TMR is more sensitive than both conventional and MR sensors. The proposed schematic claims that the higher free layer thickness offers maximum sensitivity with 77% negative magnetoresistance. The reduced coercivity of 1.9Oe is achieved in this combination at a specified temperature range.

Zigzag boron nitride nanoribbon doped with carbon atom for giant magnetoresistance and rectification behavior based nanodevices

Using the principles of density functional theory (DFT) and nonequilibrium Green’s function (NEGF), We thoroughly researched carbon-doped zigzag boron nitride nanoribbons (ZBNNRs) to understand their electronic behavior and transport properties. Intriguingly, we discovered that careful doping can transform carbon-doped ZBNNRs into a spintronic nanodevice with distinct transport features. Our model showed a giant magnetoresistance (GMR) up to a whopping 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} under mild bias conditions. Plus, we spotted a spin rectifier having a significant rectification ratio (RR) of 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our calculated transmission spectra have nicely explained why there’s a GMR up to 105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-up current at biases of -1.2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.2$$\\end{document} V, -1.1\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.1$$\\end{document} V, and -1.0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$-1.0$$\\end{document} V, and also accounted for a GMR up to 103\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^3$$\\end{document}–105\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^5$$\\end{document} for spin-down current at biases of 1.0 V, 1.1 V, and 1.2 V. Similarly, the transmission spectra elucidate that at biases of 1.0 V, 1.1 V, and 1.2 V for spin-up, and at biases of 1.1 V and 1.2 V for spin-down in APMO, the RRs reach 104\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$^4$$\\end{document}. Our research shines a light on a promising route to push forward the high-performance spintronics technology of ZBNNRs using carbon atom doping. These insights hint that our models could be game-changers in the sphere of nanoscale spintronic devices.

Perfect Spin Filtering, Giant Magnetoresistance, and Rectification Behavior Induced by V‐Doped Zigzag Graphene Nanoribbons

AbstractEmploying the constructs of density functional theory (DFT) and the Nonequilibrium Green's Function (NEGF), the investigation extensively explores the electronic and transport properties of zigzag graphene nanoribbons (ZGNRs) doped with vanadium (V). Notably, this inquiry unveils that strategic doping can transform V‐doped ZGNRs into spintronic nanodevices with distinctive transport attributes. Initially, the simulations showcase remarkably high spin‐filtering efficiencies (SFEs) at certain bias voltages. Furthermore, a giant magnetoresistance (GMR) peaking at 6.87 10 is detected. In conclusion, the examination discerns a spin rectifier that exhibits a significant rectification ratio (RR) of 9.62 10. This research delineates a viable trajectory for the refinement of high‐performance spintronics in ZGNRs via vanadium doping. The implications of this study indicate that the model harbors considerable promise for application in miniature spintronic devices.

Silica Coating of Nickel–Iron Nanocomposite by Chemical Reduction Method

The study of magnetic nanostructures is interesting because of its applications. Some of them are the development of magnetic refrigerators, ferrofluids, drug delivery systems, fabrication of devices with giant magnetoresistance effects, and high-frequency transformers. The physical and chemical properties of metal changes due to silica coating. The interaction potential can be manipulated using surface coatings and also the particle shape can be controlled. Nanoparticles with a proper surface coating are of interest for several other applications in optoelectronic devices and in the biomedical field. Thus, developing a new synthetic route for these particles and investigating the stability of magnetic materials are of great importance. Silica coating improves the chemical stability and electrical resistivity of the material. In this study, Ni3Fe (core) nanoparticles were prepared and the silica shell for this core was synthesized. The as-prepared X-ray diffraction (XRD) patterns and 300∘C annealed sample of Ni3Fe/SiO2 shows a characteristic hump in the low angle range confirming the presence of amorphous cristobalite phase of SiO2. The size of the Ni3Fe cluster in the Ni3Fe/SiO2 composite was estimated to be 8[Formula: see text]nm and 9[Formula: see text]nm, respectively, for the as-prepared and annealed samples. Vibrating sample magnetometer (VSM) measurements show the Ni3Fe to silica ratio to be 59:41. A small decrease in the coercivity value, is probably due to morphological changes associated with the coating. Scanning electron microscope (SEM) studies of the as-prepared and annealed Ni3Fe/SiO2 powder particles are of flowerlike morphology and in agglomeration. The impedance spectra were found at room temperature for the as-prepared samples.

Flexible anisotropic magnetoresistive sensors for novel magnetic flux leakage testing capabilities

Rigid magnetic field sensors such as anisotropic magnetoresistive (AMR), giant magnetoresistive (GMR) and Hall sensors have been used for years and have become industry standard for electromagnetic non-destructive testing (NDT). Recent technological developments in the field of flexible electronics allow for the fabrication of reshapeable magnetic field sensors on flexible substrates via thin-film deposition or printing. The magnetic properties of these sensors have comparable characteristics to industry-standard rigid magnetic field sensors, with the added ability of adapting to the surface of complex components and scanning in contact with the sample surface. This improves defect detectability and magnetic signal strength by minimizing the scanning lift-off (LO) distance. In this article flexible AMR sensors mounted on a rotative mechanical holder were used to scan a semi-circular ferromagnetic sample with 3 reference defects via magnetic flux leakage (MFL) testing, thus demonstrating the applicability of this type of sensors for the scanning of curved samples. In order to benchmark the performance of these sensors in comparison to industry standard rigid magnetic field sensors, a ferromagnetic sample with 10 reference defects of different depths was scanned employing flexible AMR and rigid GMR sensors. Defects with depths ranging from 110μm up to 2240μm were detected with an signal-to-noise ratio (SNR) of 2.7 up to 27.9 (for flexible AMR sensors) and 6.2 up to 72.3 (for rigid GMR sensors), respectively. A 2D magnetometer mapping of the sample with a spatial scanning step of 10×50μm2 (flexible AMR) and 16×100μm2 (rigid GMR) was obtained. The results show that this type of sensor can be used for high-resolution and high-detail mapping of defects on the surface of planar and non-planar ferromagnetic samples since the scanning lift-off distance is equal to the substrate thickness of 20μm for in-contact scanning. The SNR comparison between flexible and rigid sensors shows that the performance of the flexible AMR sensors employed is not very far behind the performance of the rigid GMR sensors used.

Large magnetocaloric effect and giant magnetoresistance in rare earth based intermetallic compound ErAl3: construction of magnetic phase diagram

This study explores the magnetic and magnetotransport behavior of polycrystalline ErAl3 compound. The polycrystalline compound adopts HoAl3-type structures with the R-3m space group, No. 166-2 and hR60 configurations. Multiple magnetic orderings and two field-induced metamagnetic transitions are observed. ErAl3 exhibits a significant magnetocaloric effect (MCE), −ΔSM = 15.25 J kg−1 K−1 and high relative cooling power of 383 J kg−1 with applied magnetic field change (ΔH) of 70 kOe near the paramagnetic to ferromagnetic transition, showcasing its potential for magnetic refrigeration technology. The compound also demonstrates metallic behavior, with a notable magnetoresistance of 48.5 % at 2 K due to the suppression of antiferromagnetism. The magnetic phase diagram reveals four distinct phases influenced by temperature and magnetic field, identified through the study of the MCE.

Development and Comprehensive Evaluation of TMR Sensor-Based Magnetrodes.

Due to their compact size and exceptional sensitivity at room temperature, magnetoresistance (MR) sensors have garnered considerable interest in numerous fields, particularly in the detection of weak magnetic signals in biological systems. The "magnetrodes", integrating MR sensors with needle-shaped Si-based substrates, are designed to be inserted into the brain for local magnetic field detection. Although recent research has predominantly focused on giant magnetoresistance (GMR) sensors, tunnel magnetoresistance (TMR) sensors exhibit a significantly higher sensitivity. In this study, we introduce TMR-based magnetrodes featuring TMR sensors at both the tip and midsection of the probe, enabling detection of local magnetic fields at varied spatial positions. To enhance detectivity, we designed and fabricated magnetrodes with varied aspect ratios of the free layer, incorporating diverse junction shapes, quantities, and serial arrangements. Utilizing a custom-built magnetotransport and noise measurement system for characterization, our TMR-based magnetrode demonstrates a limit of detection (LOD) of 300pT/ at 1 kHz. This implies that neuronal spikes can be distinguished with minimal averaging, thereby facilitating the elucidation of their magnetic properties.

Theoretical characterization of the magnetoresistance in magnetic multilayers with antiferromagnetic coupling

Spin-valves (SVs) constitute a significant class of magnetic metal structures with a large range of technological applications. This class of structure offers interesting magnetic properties due to their alternation with the non-magnetic layers. The SVs fortunately have good magnetic properties at room temperature (RT). This study intends to use Boltzmann Approach–BA, to treat the magetotransport properties of Co-based SV. Outer-surface scattering effects on magnetoresistance (MR) performance encountered in these structures are investigated by varying the interfacial chemical composition. Analysis of the results reveals the existence of a significant improvement of magnetic phenomenon for a scattering that is more and more specular of the conduction electrons through outer-surface. A giant MR (GMR) of amplitude 136.9 % is obtained for an interfacial geometric roughness of magnitude 2 Å. The GMR ratio is the result of large asymmetry in the spin-dependent interfacial scattering and a completely specular outer-surface scattering.

In vivo magnetic recording of single-neuron action potentials Abbreviated title: In vivo magnetic single-neuron action potentials.

Measuring fast neuronal signals is the domain of electrophysiology and magnetophysiology. While electrophysiology is easier to perform, magnetophysiology avoids tissue-based distortions and measures a signal with directional information. At the macroscale, magnetoencephalography (MEG) is established, and at the mesoscale, visually evoked magnetic fields have been reported. At the microscale however, while benefits of recording magnetic counterparts of electric spikes would be numerous, they are also highly challenging in vivo. Here, we combine magnetic and electric recordings of neuronal action potentials in anesthetized rats using miniaturized giant magneto-resistance (GMR) sensors. We reveal the magnetic signature of action potentials of well-isolated single units. The recorded magnetic signals showed a distinct waveform and considerable signal strength. This demonstration of in vivo magnetic action potentials opens a wide field of possibilities to profit from the combined power of magnetic and electric recordings and thus to significantly advance the understanding of neuronal circuits.

Quantum well oscillations in giant magnetoresistance and conductance with ferromagnetic free layer thickness in spin-valve structures with inverted [Co/Pt]n/Co reference layer

We present a study on the conductance and giant magnetoresistance effect in Co/Cu/(Co/Pt)4/Co/IrMn spin valves, where the inverted [Co/Pt]4/Co reference layer and the Co free layer exhibit fcc (111) and hcp (100) orientations along the z-axis. The term ’inverted’ refers to sub-nanometer thickness for both Co and Pt layers, with Pt having a smaller thickness compared to Co. By varying the thickness of the Co free layer from 0.3 to 3.2 nm, we observe oscillations in both in-plane and perpendicular conductance as well as giant magnetoresistance, displaying a superposition of two periods (2.6 and 3.7 monolayers of the Co free layer). First-principle calculations suggest that these oscillations can be attributed to quantum well states occurring in minority channels between fcc Co(111) and hcp Co(100) within multilayered structures of Co/Cu(111)/Co, thereby providing an opportunity for precise manipulation of spin electrons within sub-nanometer scale textured layers.

High‐Throughput Optimization of Magnetoresistance Materials Based on Lock‐In Thermography

AbstractWith the giant magnetoresistance (GMR) effect serving as a vital component in modern spintronic technologies, researchers are dedicating significant efforts to improve the performance of GMR devices through material exploration and design optimization. However, traditional GMR measurement approaches are inefficient for comprehensive material and device optimization. This study proposes a high‐throughput current‐in‐plane GMR measurement technique based on thermal imaging of Joule heating utilizing lock‐in thermography (LIT). This LIT‐based technique is advantageous for efficiently evaluating films with varying compositions and thickness gradients, which is crucial for ongoing material exploration and design optimization to enhance the GMR ratio. First, it is demonstrated that using CoFe/Cu multilayers, the simple Joule heating measurement based on LIT enables quantitative estimation of the GMR ratio. Then, to confirm the usefulness of the proposed method in high‐throughput material screening, a case study is shown to investigate the GMR of CoCu‐based granular films with a composition gradient. These techniques allow to determine the optimum composition with maximum GMR ratio using the single composition‐gradient film and reveal Co22Cu78 as the optimal composition, yielding the largest GMR ratio among the reported polycrystalline CoCu‐based granular films. This demonstration accelerates the material and structural optimization of GMR devices.

Electric field control of 180° magnetization reversal in a spin-valve multiferroic heterostructure

Electrical tuning of magnetism, rather than a spin current or magnetic field, has attracted much attention due to its great potential for designing energy-efficient spintronic devices. However, pure electric field (E-field) control of 180° magnetization reversal is still challenging. Thus, we report an E-field-controlled 180° magnetization reversal in a spin valve (SV)/Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) multiferroic heterostructure. Via the converse magnetoelectric coupling effect in CoFe/PMN-PT heterostructures, the magnetic anisotropy and coercive field of the CoFe film can be tremendously modulated by an E-field. We fabricated an optimized SV grown on the PMN-PT substrate, in which the magnetic moments of the free and pinned layers are parallel to each other at the initial state. By applying an E-field, the coercive field of the free layer was enhanced, exhibiting an antiparallel configuration between the free and pinned layers. Based on the theoretical and experimental results, a complete 180° magnetization reversal of the free layer can be obtained without a magnetic field. Accordingly, an E-field-controlled giant, reversible and repeatable magnetoresistance modulation can be achieved. This work proposes a feasible strategy to achieve E-field-controlled 180° magnetization reversal, which is critical for exploring ultralow power consumption magnetic memory devices.

Exchange coupling in (Co/Pt)2/Nb/(Pt/Co)2 multilayers induced by the Yu–Shiba–Rusinov bound states

The Ruderman–Kittel–Kasuya–Yosida (RKKY) theory of oscillatory exchange interaction in synthetic antiferromagnetic multilayers results in the oscillation behavior of giant magnetoresistance ratio. In addition, the formation of Yu–Shiba–Rusinov (YSR) bound states will induce an extra antiferromagnetic interaction, which is expected to mediate stronger exchange coupling than conventional RKKY interaction. However, the YSR bound states have only been studied in some superconducting hosts with magnetic impurities. The narrow range of material systems that are not compatible with the device integration architecture limits the practical application of YSR interaction. Here, we observe the RKKY interaction and provide the evidence for YSR interaction in Pt/(Co/Pt)2/Nb/(Pt/Co)2/Pt synthetic antiferromagnetic multilayers by quantitatively determining the coupling energy via ferromagnetic resonance technique.

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Negative spin polarization of Mn2VGa Heusler alloy thin films studied in current-perpendicular-to-plane giant magnetoresistance devices

Real-time biomolecule detection using GMR chip-based sensor with green-synthesized Fe3O4/rGO nanocomposites as magnetic labels

The availability of a rapid, low-cost, and easy-to-use device to monitor the bovine serum albumin (BSA) level in human blood and urine is vital in early disease detection. This work reports a biosensor system based on a giant magnetoresistance (GMR) chip as a transducer integrated with Fe3O4/rGO magnetic labels for BSA protein detection. The commercial chip AAL024 is utilized as the GMR sensor, combined with an Arduino microcontroller (AM) and a basic differential amplifier to acquire the digital output voltage. The Fe3O4/rGO nanocomposites were synthesized by a hybrid process based on the green synthesis route utilizing plant extracts. The nanocomposites exhibit superparamagnetic behavior, affecting the magnetic label detection quality. In investigating sensor performance, Fe3O4/rGO nanocomposites can generate sufficient stray fields under a 4 Oe of bias magnetic field (HB). A larger net stray field is produced by a higher concentration of magnetic labels, which suggests that there are more Fe3O4 nanoparticles attached to the sensor surface. Further, the effectiveness of the biosensor was evaluated by detecting the BSA protein. As a result, a high sensitivity of 22.98 mV/(mg/mL) and a low limit of detection (LOD) of 0.3 mg/mL were obtained in detecting Fe3O4/rGO(5:1)/BSA with a voltage signal that can be collected in 30 s. Besides its high sensitivity, low LOD, and fast detection, the sensor exhibits remarkable reproducibility and stability, as evidenced by the relative signal deviation (RSD) range of 1.1 – 5.6%. These findings demonstrate that the GMR chip-based sensor integrated with Fe3O4/rGO magnetic labels provides a simple biosensor system with real-time electronic readout.

Influence of the electron density on the giant negative magnetoresistance in two-dimensional electron gases

variation of the electron density via a metallic gate can control the disorder potentials in two-dimensional electron gases (2DEGs). This also influences the negative magnetoresistance at low magnetic fields, which is commonly observed in ultrahigh mobility 2DEGs. We investigate the temperature-dependent giant negative magnetoresistance (GNMR) as a function of the electron density for several temperatures and currents. Thereby, we find that the GNMR behavior depends decisively on the electron density. This observation is attributed to a changed disorder potential with electron density. In the case of higher electron densities, a nonlinear current dependency of the GNMR is observed, which could be described within the hydrodynamic regime. Published by the American Physical Society 2024

Electronic Delocalization Engineering of β‐AsP Enabled High‐Efficient Multisource Logic Nanodevices

AbstractDelocalized electron and phonon structures are directives for rationally tuning the intrinsic physicochemical properties of 2D materials by redistributing electronic density. However, it is still challenging to accurately manipulate the delocalized electron and systematically study the relationships between physiochemical properties and practical nanodevices. Herein, the effects of delocalized electrons engineering on blue‐arsenic‐phosphorus (β‐AsP)‐based practical devices are systematically investigated via implementing vacancies or heteroatom doping. A tendency of carrier conductivity property from “half‐metal” to “metal” is initially found when tuning the electronic structure of β‐AsP with adjustable vacancy concentrations below 2 at% or above 3 at%, which can be ascribed to the introduction of delocalized electrons that cause asymmetric contributions to the electronic states near the implementation site. In optical logic device simulations, broadband response, triangular wave circuit system signal, and reverse polarization anisotropy are achieved by adjusting the vacancy concentration, while extinction ratios are as high as 1561. The electric and thermic‐logic devices realize the highest available reported giant magnetoresistance (MR) up to 1013% and 1039% at vacancy concentrations of 1.67% and 0.89%, respectively, which is significantly superior to the reports. The results shed light on the electronic delocalization strategy of regulating internal structures to achieve highly efficient nanodevices.

Interfacial strain induced giant magnetoresistance and magnetodielectric effects in multiferroic BCZT/LSMO thin film heterostructures

Layered thin films of the ferroelectric perovskite Ba0.85Ca0.15Ti0.9Zr0.1O3 (BCZT) and the ferromagnetic half-metal La0.80Sr0.20MnO3 (LSMO) are well-known multiferroic systems that show promise for spintronic applications. In this work, the structure–property relationships are explored in novel BCZT/LSMO thin film heterostructures with optimized ferroic properties. Epitaxial BCZT/LSMO thin film heterostructures are grown by varying the lattice mismatch strains on single crystal LaAlO3 (LAO) (100) and MgO (100) substrates using the pulsed laser deposition technique. The epitaxial strain in the films gives rise to a tetragonal distortion of the BCZT and LSMO unit cells and significantly affects their magnetotransport and magnetodielectric properties. The BCZT/LSMO/LAO heterostructure exhibits a colossal magnetoresistance effect due to a large out-of-plane tensile strain, which induces enhanced carrier hopping in the LSMO layer as compared to the BCZT/LSMO/MgO film. The larger tetragonal distortion of the BCZT unit cell in BCZT/LSMO/MgO contributes to higher dielectric permittivity, with a greater dielectric maxima temperature and freezing temperature. Magnetodielectric measurements reveal a hitherto unobserved giant magnetodielectric effect in the BCZT/LSMO/MgO film, attributed to a large in-plane strain, which induces interfacial polarization distortion at the interfacial layer. Overall, this work elucidates the unique strain and charge-mediated cross-coupled phenomena of magnetic and electric orders in multiferroic thin film heterostructures, which are critical for their technological applications.

Transport properties of Mn-doped/adsorbed zigzag boron nitride nanoribbon based nanodevices

We are conducting research into the spin transport characteristics of models that are built from zigzag Boron Nitride Nanoribbons (ZBNNRs) that have been doped and adsorbed with Mn. These investigations are made possible by using the non-equilibrium Green’s function (NEGF) formalism in conjunction with Density Functional Theory (DFT). We have scrutinized the electronic structures of six different models, and have chosen two for a deeper exploration of its’ transport characteristics. Our computational findings highlight an unusual occurrence where a Mn atom substitutes a B atom in ZBNNRs, resulting in ZB(Mn)NNRs that exhibit significant Giant Magnetoresistance (GMR) and Rectification ratio (RR) - peaking at 106 and 105 respectively, along with the presence of negative differential conductance (NDC) effects. The detected GMR, NDC, and rectification characteristics in ZB(Mn)NNRs offer an optimistic outlook for the conceptualization of future nanodevices.