AbstractThe dislocation photoluminescence (DPL) at 4.2 K was studied in germanium (Ge) single crystals of n‐ and p‐type with quasi‐equilibrium structure of 60° dislocations. The DPL spectra for different samples were decomposed on Gaussian lines (Gm‐lines) over the range 0.47‐0.58 eV characterized by practically the same peak energies Em and the widths under 15 meV. The G‐lines with Em ≤ 0.55 eV were ascribed to the radiation of regular segments of 60° dislocations with different stacking fault (SF) widths Δ between 30 and 90° partials. An increase of the dislocations density up to ND ∼ 107 cm–2 was found to result in a considerable growth of the intensity of the G‐lines with Em <0.513 eV. The factors, which promote the appearance of different Δ values for quasi‐equilibrium 60° dislocation structure, are discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)