Abstract
In the present investigation, we have made use of our newly produced n +p-mesa diodes on Ga-doped, 2-Ω cm Ge-single crystals to study irradiation-induced defects in p-type Ge. Irradiation with electrons shows five distinct levels introduced. The use of protons and α-particles (and at different doses) for irradiation, reveals four new levels, and allows for the possibility of connecting some of the levels to the divacancy.
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