Gate Voltage Vg Research Articles

Effects of insertion of an h-AlN monolayer spacer in Pt-WSe2-Pt field-effect transistors

The growth of two-dimensional hexagonal aluminum nitride (h-AlN) on transition metal dichalcogenide (TMD) monolayers exhibits superior uniformity and smoothness compared to HfO2\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$_{2}$$\\end{document} on silicon substrate. This makes an h-AlN monolayer an ideal spacer between the gate oxide material and the WSe2 monolayer in a two-dimensional field effect transistor (FET). From first principles approaches, we calculate and compare the transmission functions and current densities of Pt–WSe2–Pt nanojunctions without and with the insertion of an h-AlN monolayer as a spacer in the gate architecture. The inclusion of h-AlN can alter the characteristics of the Pt–WSe2–Pt FET in response to the gate voltage (Vg\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}$$\\end{document}). The FET without (or with) h-AlN exhibits the characteristics of a P-type (or bipolar) transistor: an on/off ratio of around 2.5×106\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$2.5 \ imes 10^{6}$$\\end{document} (or 1.7×106\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$1.7 \ imes 10^{6}$$\\end{document}); and an average subthreshold swing (S.S.) of approximately 109 mV/dec.\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {dec.}$$\\end{document} (or 112 mV/dec.\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\ ext {dec.}$$\\end{document}), respectively. We observe that Vg\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}$$\\end{document} shifts the profile of the transmission function by an energy of α(eVg)\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha (e V_{\ ext {g}})$$\\end{document}, where α\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha$$\\end{document} represents the gate-controlling efficiency. We observed that αin=83%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha _{\ ext {in}}=83\\%$$\\end{document} and αout=33%\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$\\alpha _{\ ext {out}}=33\\%$$\\end{document}, corresponding to whether the Fermi energy is located inside or outside the band gap. Therefore, we construct an effective gate model based on the Landauer formula, with the transmission function at Vg=0\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$V_\ ext {g}=0$$\\end{document} as the baseline. Our model generates results that are consistent with those obtained through first principles calculations. The relative error in current densities between model and first-principles calculations is within [ln(10)S.S.]|ΔVGeff|\\documentclass[12pt]{minimal} \\usepackage{amsmath} \\usepackage{wasysym} \\usepackage{amsfonts} \\usepackage{amssymb} \\usepackage{amsbsy} \\usepackage{mathrsfs} \\usepackage{upgreek} \\setlength{\\oddsidemargin}{-69pt} \\begin{document}$$[\\frac{ln(10)}{S.S.}] | \\Delta V_{\ ext {G}}^{\ ext {eff}} |$$\\end{document}. The 2D atomistic FETs show excellent device specifications and the ability to compete with existing transistors based on traditional silicon technology. Our findings could help advance the design of TMD-based FETs.

Spintronic device in SWCNT-FET configuration based on chromium oxides thin films consisting of half-metallic ferromagnetic CrO2

Spintronic device architectures consisting of ferromagnetic chromium oxide electrodes in single-walled carbon nanotubes field effect transistor (SWCNT-FET) configuration have been fabricated to act as strategic building blocks for next generation super-compact high-speed nanoelectronic devices for logic and memory operations. Stable thin films of chromium oxides consisting of half-metallic ferromagnetic chromium-di-oxide (CrO2) were pulsed laser deposited (PLD) over lattice-matched rutile-type-tetragonal intermediate TiO2 thin layers over thermally oxidized Si substrates for engineering of the spintronic device structure. Focused ion beam (FIB) milling was applied to the ferromagnetic chromium oxide thin films for patterning of the source (S) and (D) electrodes. Typical electrical characteristics derived by lnρ vs. T−1/2 plots confirmed spin-dependent transport (SDT) as the dominant mechanism of electrical conduction upto temperatures of ∼280 K along with negative magnetoresistance (MR) of ∼30 % at 278 K. Electrical characteristics (output and transfer) of the spintronic device structure were drawn under application of magnetic field (H) in out-of-plane geometry at the temperatures of 5.6 K, 250 K & 300 K. Drain current (Id) is demonstrated to be controlled effectively as a function of gate bias (Vg) for different fixed Vd-biases at all the device operating temperatures. Change in %MR as a function of gate voltage (Vg) was acquired at T = 250 &T = 300 K that displayed higher %MR change under out-of-plane geometry of applied field of 0.75 T of the spintronic device operation.

Photodetection Enhancement of PdSe2/ReSe2 Van der Waals Heterostructure Field‐Effect Transistors: A Density Functional Theory‐Guided Approach

AbstractThe fabrication of van der Waals heterostructures (vdWHs) has drawn considerable interest because of their wide range of functionalities. Herein, a novel PdSe2/ReSe2 vdWHs with gate‐tunable rectification behavior and excellent broadband photodetection characteristics is presented. The application of the gate bias substantially enhances the rectification behavior, with the highest rectification ratio (≈3.13 × 103) observed at gate voltage Vg = −60 V. The density functional theory calculations demonstrate the direct and indirect bandgap behavior of PdSe2 and ReSe2 in the monolayer structure, respectively. Additionally, the PdSe2/ReSe2 heterojunction displays a strong photo‐response in the near‐infrared region and achieves a high photoresponsivity, an excellent external quantum efficiency, and rapid rise and decay times of 1.7 × 103 A W−1, 4.05 × 103, and 5 and 20 ms, respectively. Furthermore, the device exhibits a remarkable detectivity of ≈3.5 × 1012 Jones. The findings hold great potential for advancing the fabrication of multifunctional vdW heterostructure devices.

Performance improvement in reservoir computing by using HfZrO2 FeFETs through operating voltage optimization

We have investigated how the parameters of an input gate voltage (V g) waveform and a drain voltage (V d) impact the performance of reservoir computing (RC) using a Hf0.5Zr0.5O2 ferroelectric FET (FeFET). The RC performance is maximized by the high swing amplitude of the V g and the most symmetrical polarization switching condition in the triangular-shaped input waveform, obtained by the center V g of 0.5 V, because of the enhanced polarization switching of the FeFETs. Regarding the V d dependence, the amount of the drain current and polarization switching have a trade-off relationship. As a result, a moderate V d of 1.0 V becomes optimum in terms of the RC performance because a difference in drain current responses between different gate input patterns is maximized with this V d. Furthermore, high computing capacities are achieved by combining the above optimal bias condition with drain current responses to both original and inverted gate input patterns.

Atomic layer self-transducing MoS2 vibrating channel transistors with 0.5 pm/Hz1/2 displacement sensitivity at room temperature

We report on the experimental demonstration of high-performance suspended channel transistors with single- and bilayer (1L and 2L) molybdenum disulfide (MoS2), and on operating them as vibrating channel transistors (VCTs) and exploiting their built-in dynamic electromechanical coupling to read out picoampere (pA) transconduction current directly at the vibrating tones, without frequency conversion or down-mixing, for picometer (pm)-scale motion detection at room temperature. The 1L- and 2L-MoS2 VCTs exhibit excellent n-type transistor behavior with high mobility [150 cm2/(V·s)] and small subthreshold swing (98 mV/dec). Their resonance motions are probed by directly measuring the small-signal drain-source currents (iD). Electromechanical characteristics of the devices are extracted from the measured iD, yielding resonances at f0 = 31.83 MHz with quality factor Q = 117 and f0 = 21.43 MHz with Q = 110 for 1L- and 2L-MoS2 VCTs, respectively. The 2L-MoS2 VCT demonstrates excellent current and displacement sensitivity (Si1/2 = 2 pA/Hz1/2 and Sx1/2 = 0.5 pm/Hz1/2). We demonstrate f0 tuning by controlling gate voltage VG and achieve frequency tunability Δf0/f0 ≈ 8% and resonance frequency change Δf0/ΔVG ≈ 0.53 kHz/mV. This study helps pave the way to realizing ultrasensitive self-transducing 2D nanoelectromechanical systems at room temperature, in all-electronic configurations, for on-chip applications.

Optimization of electrothermal response of GAAFET using Taguchi's approach and an artificial neural network

This work aims to propose a numerical optimization of the electrothermal behavior of a gate-all-around field effect transistor (GAAFET). The electrothermal model is composed of semiconductor equations coupled with heat conduction equations. The finite element method was adopted for the discretization of equations describing the electrothermal model. The effects of geometric and electrical parameters such as gate length (Lg), oxide thickness (tox), nanowire radius (R), trap density (Nt), ramp parameter (α),gate voltage (Vg), and drain voltage (Vd) were analyzed based on a Taguchi L27(37) orthogonal array. Optimization of the control factors was performed. Multiple linear and nonlinear regressions, as well as an artificial neural network, were used. Numerical analysis revealed that the overall optimal drain current and peak temperature device reach the maximum drain current with lower temperature. The analysis of variance shows that the maximum contribution (39 % for the drain current and 36 % for Tmax) is occupied by the ramp coefficient (α) while the other parameters have a small contribution (less than 3 %) to optimize the performance of the GAAFET transistor. The statistical analysis reveals that the developed artificial neural network model is efficient for the prediction of the electrical and thermal characteristics of the GAAFET transistor. The results of this study are promising for advancing our understanding of these innovative transistor technologies, enabling them to be efficiently integrated into the next generation of electronic products.

Highly efficient quantum heat engine operating at maximum power in the α-T3 lattice

The α−T3 lattice, an interpolation of graphene's honeycomb lattice and the dice lattice, has drawn a lot of attention. Herein, the thermoelectric properties of the α−T3 lattice based junction are investigated. The parameter φ and the gate voltage Vg can be utilized for adjusting thermoelectric properties. Without the mass term Δ, the efficiency at maximum power η is relatively low, similar to two-dimensional graphene. When Δ is introduced, the initially flat band warps and disperses, resulting in a band gap between the distorted flat band and the conduction (valence) band. In this case, the maximum power and η are both greatly enhanced and are adjustable by Vg and φ. With high output power, η can be higher than 0.3 Carnot efficiency. As a result, it is suggested that the α−T3 lattice will be utilized to create a highly efficient quantum heat engine.

A physics-based analytical model for ZnO based HEMT

In this brief, the electrical performance of MgZnO/ZnO HEMT is analysed using a physics-based analytical model. The proposed model is successfully validated with the existing experimental results. The output conductance (gd) of MgZnO/ZnO HEMT is calculated as 1479.7 μA/V for 2 nm thickness of MgZnO barrier layer having gate length of 1 μm. The magnitude of gd is reduced to 791.4 μA/V when the thickness of the barrier layer is reduced to 1.5 nm for MgZnO/ZnO HEMT having gate length of 2 μm. The peak magnitude of figure-of-merit metrics: VIP2, VIP3, and IIP3 is calculated as 15.73, 19.67, and 23.32 dBm respectively at the gate voltage (Vg) of −1.5 V at 2 nm thickness of barrier layer having gate length of 1 μm. The lowest magnitude of IMD3 is obtained as −41.9 dBm at Vg = −2.5 V for 2 nm thickness of barrier layer having gate length of 1 μm.

Giant Nonvolatile Electric Field Control of Proximity‐Induced Magnetism in the Spin–Orbit Semimetal SrIrO3

AbstractWith its potential for drastically reduced operation power of information processing devices, electric field control of magnetism has generated huge research interest. Recently, novel perspectives offered by the inherently large spin–orbit coupling of 5d transition metals have emerged. Here, nonvolatile electrical control of the proximity‐induced magnetism in SrIrO3 based back‐gated heterostructures is demonstrated. Up to a 700% variation of the anomalous Hall conductivity (σAHE) and Hall angle (ΘAHE) as function of the applied gate voltage Vg is reported. In contrast, the Curie temperature TC ≈ 100 K and magnetic anisotropy of the system remain essentially unaffected by Vg indicating a robust ferromagnetic state in SrIrO3 which strongly hints to gating‐induced changes of the anomalous Berry curvature. The electric‐field induced ferroelectric‐like state of SrTiO3 enables nonvolatile switching behavior of σAHE and ΘAHE below 60 K. The large tunability of this system, opens new avenues toward efficient electric‐field manipulation of magnetism.

Study of Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor using RPCVD SiO2 and PECVD a-Si:H thin films: probably needed focus for bio-sensing application

In the present study Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor (BGTFT) was fabricated using remote plasma enhanced chemical vapor deposited (RPCVD) SiO2 and PECVD a-Si:H. The Al/a-Si:H/SiO2/n-Si/Al based bottom gate thin film transistor was studied with an intension to apply it for bio-sensing application. The transfer characteristics of BGTFT were studied. The values of Gdd are 3.14 × 10−7 S, 1.38 × 10−7 S, 3.34 × 10−8 S, 4.84 × 10−9 S & 1.57 × 10−10 S for gate voltage Vg = −2, −1, 0, 1 & 2 V respectively. The Gdd values are found to decrease with the increase of gate voltage (Vg). The values of Gdg are 5.36 × 10−8 S, 5.98 × 10−9 S, 7.28 × 10−7 S, 2.40 × 10−7 & 5.00 × 10−9 respectively for Vd = −2, −1, 0, 1 & 2 V. The present current level and the conductance of BGTFT is so large that it is not possible to detect the proteins and antibody as these bio-molecules have charge of the order of nano amps. Therefore it requires a needed focus to study the ferroelectric or high k material as the active material instead of a-Si:H for BGTFT for bio-sensing application as the ferroelectric materials have low conductance and channel current. This will be our future work to use ferroelectric or high k materials as the active materials of BGTFT.

Gate-Tunable Critical Current of the Three-Dimensional Niobium Nanobridge Josephson Junction.

Recent studies have shown that the critical currents of several metallic superconducting nanowires and Dayem bridges can be locally tuned by using a gate voltage (Vg). Here, we report a gate-tunable Josephson junction structure constructed from a three-dimensional (3D) niobium nanobridge junction (NBJ) with a voltage gate on top. Measurements up to 6 K showed that the critical current of this structure can be tuned to zero by increasing Vg. The critical gate voltage was reduced to 16 V and may possibly be reduced further by reducing the thickness of the insulation layer between the gate and the NBJ. Furthermore, the flux modulation generated by Josephson interference of two parallel 3D NBJs can also be tuned by using Vg in a similar manner. Therefore, we believe that this gate-tunable Josephson junction structure is promising for superconducting circuit fabrication at high integration levels.

A Simulation Optimization Factor of Si(111)-Based AlGaN/GaN Epitaxy for High Frequency and Low-Voltage-Control High Electron Mobility Transistor Application.

The effects of barrier layer thickness, Al component of barrier layer, and passivation layer thickness of high-resistance Si (111)-based AlGaN/GaN heterojunction epitaxy on the knee-point voltage (Vknee), saturation current density (Id-sat), and cut-off frequency (ft) of its high electron mobility transistor (HEMT) are simulated and analyzed. A novel optimization factor OPTIM is proposed by considering the various performance parameters of the device to reduce the Vknee and improve the Id-sat on the premise of ensuring the ft. Based on this factor, the optimized AlGaN/GaN epitaxial structure was designed with a barrier layer thickness of 20 nm, an Al component in the barrier layer of 25%, and a SiN passivation layer of 6 nm. By simulation, when the gate voltage Vg is 0 V, the designed device with a gate length of 0.15 μm, gate-source spacing of 0.5 μm, and gate-drain spacing of 1 μm presents a high Id-sat of 750 mA/mm and a low Vknee of 2.0 V and presents ft and maximum frequency (fmax) as high as 110 GHz and 220 GHz, respectively. The designed device was fabricated and tested to verify the simulation results. We demonstrated the optimization factor OPTIM can provide an effective design method for follow-up high-frequency and low-voltage applications of GaN devices.

Temperature dependent charge transport in electrostatically doped poly[benzimidazobenzophenanthroline] thin films

AbstractCharge transport in electrostatically doped poly[benzimidazobenzophenanthroline]‐BBL thin films in a field‐effect transistor geometry were investigated in the temperature range 150 K < T < 370 K. At low temperatures activation and hopping transport mechanisms dominated, while phonon scattering dominated at high temperatures. The activation energies (EA) were found to lie in the range 140 meV < EA < 400 meV implying the existence of deep traps within the polymer bandgap of 1.8 eV. Two quasi‐linear dependencies of EA on the gate voltage (Vg) were observed with EA decreasing as Vg increased. An unexpected “metallic‐like” transport characteristic appeared for T > 335 K which depended on Vg. Enhanced electron delocalization combined with increased carrier density could be responsible for this “metallic‐like” behavior. Our results show that the existence of deep traps with multiple energy distributions, combined with increased carrier density led to the unusual temperature dependence of charge transport observed in BBL.

Self-Forming p-n Junction Diode Realized with WSe2 Surface and Edge Dual Contacts.

Owing to their practical applications, two-dimensional semiconductor p-n diodes have attracted enormous attention. Over the past decade, various methods, such as chemical doping, heterojunction structures, and metallization using metals with different work functions, have been reported for fabrication of such devices. In this study, a lateral p-n junction diode is formed in tungsten diselenide (WSe2 ) using a combination of edge and surface contacts. The appearance of amorphous tungsten oxide at etched WSe2 , and the formation of a junction near the edge contact, are verified by high-resolution transmission electron microscopy. The device demonstrates high on/off ratio for both the edge and surface contacts, with respective values of 107 and 108 . The diode can achieve extremely high mobility of up to 168 cm2 V-1 s-1 and a rectification ratio of 103 . The ideality factor is 1.11 at a back gate voltage VG = 60 V at 300 K. The devices with encapsulation of hexagonal boron nitride exhibit good stability to atmospheric exposure, over a measured period of 2 months. In addition, the architecture of the contacts, which is based on a single-channel device, should be advantageous for the implementation of more complicated applications such as inverters, photodetectors, and light-emitting diodes.

Ionic Liquid Gating in Perovskite Solar Cells with Fullerene/Carbon Nanotube Collectors

Metallic cathodes are one of reasons for instability in perovskite solar cells due to reaction with halogens I−, Br−, and it is desirable to have stable carbon‐based cathodes, particularly carbon nanotubes (CNTs), and transport layers such as C60/C70. In this work, we show that gating of such top CNT cathode in ionic liquid by changing gate voltage (V g) tunes the Fermi level of CNT by electrical double layer charging and causes lowering of the barrier at C60/C70 electron transport layer (ETL). Moreover, at higher V g the ions further propagate into fullerene ETL by electrochemical n‐doping, which increases dramatically performance by further raising mostly two parameters: short‐circuit current and fill factor, resulting in solar cell efficiency growth from 3% to 11%. Surprisingly, open‐circuit voltage (V oc) is not sensitive to V g in the perovskite solar cells, on the contrary to strongly enhanced V oc in ionically gated organic solar cells, where it is the main effect for ionic gating. This insensitivity of V oc to lowering of the work function of CNT electrode is a clear indication that V oc in the perovskite solar cell is determined by inner p‐i‐n junction formation in the perovskite layer itself.

(Invited) One-Dimensional Features of Electron Transport in Single-Walled Carbon Nanotube Thin Films

Single-walled carbon nanotubes (SWCNTs) are excellent conductors with high flexibility, high thermal conductivity, and high transparency. Flexible and transparent SWCNT thin films and SWCNT yarns with high mechanical strength have been produced, and in particular, the improvement of electrical conduction characteristics of these SWCNT aggregates has been studied intensively. The electrical conductivity of SWCNT aggregates have improved year by year, but it is worse than those of a single SWCNT, so far. SWCNT aggregates contain complex structures such as SWCNTs with different chirality structures, many junctions, and bundle structures, which could be the cause of deterioration of transport characteristics, however, it has not been clarified.In this study, we focused on low-density SWCNT thin films and investigated their electron transport characteristics. The low-density SWCNT thin film has a simple network structure since the network consists of the bundles of a small number of long SWCNTs. Here, the magnetic field dependence, temperature dependence, and gate voltage dependence of the electrical conductivity were measured and analyzed.The SWCNT thin films were synthesized by a floating catalyst CVD method, and they were transparent (90%T), and electrically conductive [1]. The thin film consisted of a network structure of bundles, which consisted of about 10 SWCNTs. The films were mixtures with metallic and semiconducting SWCNTs. The electrical resistivity of the SWCNT thin film was measured by the four-point probes method, and the gate voltage (Vg) was applied using an ionic liquid. The direction of the magnetic field was perpendicular to the thin film surface. The areal density of SWCNT length was estimated from the light absorption cross-section of the SWCNT thin films, and then the electrical resistivity was calculated from the actual volume of SWCNTs excluding the void space.SWCNTs generally show p-type characteristics in the atmosphere in the back-gate configuration due to the dope effects of oxygen and/or water molecules. However, the Vg dependence of the electrical resistivity of the thin film showed a bipolar behavior under the ionic liquid gate. The change ratio of the resistivity in the Vg range (-3 to +3 V) was more than 10, which suggested that not only did the non-conductive semiconducting SWCNT become conductive, but the number of percolation paths increased accordingly. Raman scattering spectroscopy also exhibited that semi-conducting SWCNTs were heavily doped by the ionic liquid gating. The electrical resistivity decreased down to approximately 20 μΩcm at room temperature with Vg=-3 V. The temperature dependence in the temperature range (30-110 K) with Vg=-3 V was explained by the variable range hopping (VRH) model with the dimensionality of one, although the SWCNT thin films are two-dimensional structures. Hall resistivity of the thin film slightly changed at different Vg, however, it was almost negligible. It is probably because most of the SWCNT thin films were linear bundle parts, and the bundle diameter was a few nm, which is much smaller than the cyclotron radius [2]. Additionally, the thermoelectric measurement was performed. The Vg dependence of thermoelectrical conductivity showed one-dimensional characteristics [3]. These measurements showed one-dimensional features of electron transport properties of SWCNT thin films. A single SWCNT can be regarded as a one-dimensional system, but in general, one-dimensional features do not appear in the electron transport of SWCNTs in the form of thin films or yarns. In this study, probably because the thin film has a very low density (light transmittance 90% T) and forms a network consisting of a thin bundle structure, the one-dimensional features clearly appeared. The one-dimensionality is one of the origins of the excellent properties of SWCNTs and it is could be a useful index for improving electrical conductivity.AcknowledgmentsI would like to thank H. Date (Univ. of Tokyo) for the experiments and measurements, Prof. T. Fujii (Univ. of Tokyo) for the measurements, and Prof. E. I. Kauppinen for the sample supply.[1] A.G. Nasibulin, et al., ACS Nano, 5 (2011) 3214.[2] M. L. Roukes, et al., Phys. Rev. Lett., 59 (1987) 3011.[3] Y. Ichinose, et al., Phys. Rev. Mater., 5 (2021) 025404.

Hysteresis-free Ga2O3 solar-blind phototransistor modulated from photoconduction to photogating effect

High tunability of photoresponse characteristics under work conditions is desired for a single solar-blind photodetector to be applied in multifarious fields. Three-terminal metal–oxide–semiconductor field-effect phototransistors have shown excellent controllability of performance, but the hysteresis issue impedes their stable operation. In this work, the metal–semiconductor field-effect phototransistor based on the exfoliated Ga2O3 microflake and graphene thin film is demonstrated. The high-quality quasi-van der Waals interface between Ga2O3 and graphene eliminates the hysteresis issue and generates a subthreshold swing as low as 69.4 mV/dec. By regulating gate voltage (Vg), the dominated mechanism of photocurrent generation in the device can be tuned continuously from the fast photoconduction effect to photogating effect with high photogain. Accordingly, the responsivity, dark current, detectivity, rejection ratio, and decay time of the device can be well adjusted by the Vg. At Vg = −1 V and a source to drain voltage of 2 V, the device shows excellent performance with a responsivity of 2.82 × 103 A/W, a rejection ratio of 5.88 × 105, and a detectivity of 2.67 × 1015 Jones under 254 nm illumination. This work shows the possibility of realizing highly tunable solar-blind photodetectors to meet the requirements for different application fields by introducing gate voltage modulation.

Highly efficient quantum heat engine operating at maximum power in a silicene based antiferromagnetic/ferromagnetic junction

Due to the promising applications in energy harvesting, quantum heat engines at the nanoscale has attracted much interest in the past decades. Here the thermoelectric properties of a silicene based antiferromagnetic/ferromagnetic junction are investigated. The maximum power Pmax and the efficiency at maximum power η(Pmax) can be modulated by the gate voltage Vg, and be comparable to or even better than that of recent proposals based on two terminal graphene system. In addition, because of the specific spin and valley dependent band-matching tunneling mechanism, there exists a plateau in the Pmax (η(Pmax)) versus Vg curves, which is sensitive to T and vanishes at high T. This indicates the silicene junction can operate as a highly efficient quantum heat engine.

Time-domain Analysis of Traveling Wave Switches based on Time-variant Transmission Line Model

Background and Objectives: Switches play an important role in controlling the signal flow in telecommunication systems. The traveling wave switch structure is introduced based on active transmission lines. By applying the gate voltage (Vg), the transfer of signal through the drain transmission line is controlled. By increasing operating frequency, lumped model is unreliable and semi and fully distributed modeling should be applied for the analysis of these elements. Methods: Traveling wave switches can be analyzed based on the lossy transmission line model, in linear and non-linear modes in the time and frequency domains. The study of transient behavior and time domain response of switch is very important. Switching and transient from on to off state and vice versa affect the performance of telecommunication systems.In the proposed method, the switch is modeled as the lossy transmission line that the primary elements of this model change with time based on the control voltage applied to the gate and are considered as variable with time. The structure is discretized in the space and time domains with ∆z and ∆t steps. The Finite-difference time-domain (FDTD) method is utilized to study the transient response of switches. By using the leap-frog algorithm, the new voltages and currents of the transmission line are calculated based on the values of adjacent spatial and temporal steps.Results: The transient response of the switch is analyzed in transition from off to on states and vice versa, for the 800µm switch at 60GHz, based on the parameters of the passive transmission line and nonlinear Curtice2 FET model.Conclusion: For transient analysis of the structure, the time-variant lossy transmission line model was used that its elements changed based on the applied control voltage. The results of FDTD method were investigated with the transient analysis of commercial software that show good agreement with each other and validated the proposed method.

Electrostatic control of photoluminescence from A and B excitons in monolayer molybdenum disulfide.

Tailoring excitonic photoluminescence (PL) in molybdenum disulfide (MoS2) is critical for its various applications. Although significant efforts have been devoted to enhancing the PL intensity of monolayer MoS2, simultaneous tailoring of emission from both A excitons and B excitons remains largely unexplored. Here, we demonstrate that both A-excitonic and B-excitonic PL of chemical vapor deposition (CVD)-grown monolayer MoS2 can be tuned by electrostatic doping in air. Our results indicate that the B-excitonic PL changed in the opposite direction compared to A-excitonic PL when a gate voltage (Vg) was applied, both in S-rich and Mo-rich monolayer MoS2. Through the combination of gas adsorption and electrostatic doping, a 12-fold enhancement of the PL intensity for A excitons in Mo-rich monolayer MoS2 was achieved at Vg = −40 V, and a 26-fold enhancement for the ratio of B/A excitonic PL was observed at Vg = +40 V. Our results demonstrate not only the control of the conversion between A0 and A−, but also the modulation of intravalley and intervalley conversion between A excitons and B excitons. With electrostatic electron doping, the population of B excitons can be promoted due to the enhanced intravalley and intervalley transition process through electron–phonon coupling. The electrostatic control of excitonic PL has potential applications in exciton physics and valleytronics involving the B excitons.