A physics-based analytical model for ZnO based HEMT

Abstract

In this brief, the electrical performance of MgZnO/ZnO HEMT is analysed using a physics-based analytical model. The proposed model is successfully validated with the existing experimental results. The output conductance (gd) of MgZnO/ZnO HEMT is calculated as 1479.7 μA/V for 2 nm thickness of MgZnO barrier layer having gate length of 1 μm. The magnitude of gd is reduced to 791.4 μA/V when the thickness of the barrier layer is reduced to 1.5 nm for MgZnO/ZnO HEMT having gate length of 2 μm. The peak magnitude of figure-of-merit metrics: VIP2, VIP3, and IIP3 is calculated as 15.73, 19.67, and 23.32 dBm respectively at the gate voltage (Vg) of −1.5 V at 2 nm thickness of barrier layer having gate length of 1 μm. The lowest magnitude of IMD3 is obtained as −41.9 dBm at Vg = −2.5 V for 2 nm thickness of barrier layer having gate length of 1 μm.