Gapped Dirac Cones Research Articles

Electronic structure and topological features of tin-based binary nanosheets and their hydrogenated/fluorinated derivatives: A first-principles study

Utilizing first-principles calculations, we have investigated the structural, electronic and topological properties of binary SnSi and SnGe nanosheets as well as their H-/F-derivatives. It is found that all these systems have chair-like buckled configurations with robust structural stabilities. Unlike the elemental group-IV sheets, SnSi and SnGe sheets are narrow-band-gap semiconductors, which have a gapped Dirac cone with massive Fermions. Under the strains, a direct-to-indirect band gap transition and a semiconductor-to-metal transition would occur in these systems. Although these binary systems are trivial band insulators with ℤ2=0, their topological features can be altered by the surface decorations. Particularly, the fluorinated SiGe sheet becomes a topological insulator with ℤ2=1, and such non-trivial state can also be found in the strained fluorinated SnSi and hydrogenated SnGe sheets. Large non-trivial SOC band gaps of 0.09–0.17eV are obtained in these 2D topological insulating systems, which will be beneficial for realizing the room-temperature quantum spin Hall effect. Our study demonstrates that binary Sn-based nanomaterials possess tunable electronic and topological properties, which have potential applications in low-power nano-electrics and devices.

Strong topological metal material with multiple Dirac cones

We report a new, cleavable, strong-topological-metal, Zr2Te2P, which has the same tetradymite-type crystal structure as the topological insulator Bi2Te2Se. Instead of being a semiconductor, however, Zr2Te2P is metallic with a pseudogap between 0.2 and 0.7 eV above the fermi energy (EF). Inside this pseudogap, two Dirac dispersions are predicted: one is a surface-originated Dirac cone protected by time-reversal symmetry (TRS), while the other is a bulk-originated and slightly gapped Dirac cone with a largely linear dispersion over a 2 eV energy range. A third surface TRS-protected Dirac cone is predicted, and observed using ARPES, making Zr2Te2P the first system to realize TRS-protected Dirac cones at M points. The high anisotropy of this Dirac cone is similar to the one in the hypothetical Dirac semimetal BiO2. We propose that if EF can be tuned into the pseudogap where the Dirac dispersions exist, it may be possible to observe ultrahigh carrier mobility and large magnetoresistance in this material.

Emergence of massless Dirac fermions in graphene's Hofstadter butterfly at switches of the quantum Hall phase connectivity.

The fractal spectrum of magnetic minibands (Hofstadter butterfly), induced by the moiré superlattice of graphene on a hexagonal crystal substrate, is known to exhibit gapped Dirac cones. We show that the gap can be closed by slightly misaligning the substrate, producing a hierarchy of conical singularities (Dirac points) in the band structure at rational values Φ = (p/q)(h/e) of the magnetic flux per supercell. Each Dirac point signals a switch of the topological quantum number in the connected component of the quantum Hall phase diagram. Model calculations reveal the scale-invariant conductivity σ = 2qe(2)/πh and Klein tunneling associated with massless Dirac fermions at these connectivity switches.

Gated silicene as a tunable source of nearly 100% spin-polarized electrons

Silicene is a one-atom-thick two-dimensional crystal of silicon with a hexagonal lattice structure that is related to that of graphene but with atomic bonds that are buckled rather than flat. This buckling confers advantages on silicene over graphene, because it should, in principle, generate both a band gap and polarized spin-states that can be controlled with a perpendicular electric field. Here we use first-principles calculations to show that field-gated silicene possesses two gapped Dirac cones exhibiting nearly 100% spin-polarization, situated at the corners of the Brillouin zone. Using this fact, we propose a design for a silicene-based spin-filter that should enable the spin-polarization of an output current to be switched electrically, without switching external magnetic fields. Our quantum transport calculations indicate that the proposed designs will be highly efficient (nearly 100% spin-polarization) and robust against weak disorder and edge imperfections. We also propose a Y-shaped spin/valley separator that produces spin-polarized current at two output terminals with opposite spins.

Tunneling spectroscopy of chiral states in ultra-thin topological insulators

The temperature, Fermi-level, and bias dependencies of the inter-surface tunneling current in thin-film topological insulators show unique, identifying signatures of the surface states and their opposite chiralities. The opposite chiralities of the surface states limit the tunneling to the band edges of the gapped Dirac cones. As a result, the tunneling conductance is sensitive to the temperature, the Fermi level, and the surface-surface potential difference. The temperature dependence of the tunneling conductance changes sign as the Fermi level scans through the Dirac point. The tunneling transmission is a minimum when the opposing surface Dirac cones are perfectly aligned in energy. This minimum state of the tunneling channel can result in negative differential resistance (NDR) in the presence of a built-in Rashba-like splitting. The unique thermal response of the tunneling conductance and the existence of NDR suggest a tunneling spectroscopy experiment to demonstrate the opposite chiralities of the opposing surface states.