Ga2O3 Layer Research Articles

β-Ga2O3 Schottky Barrier Diode with Ion Beam Sputter-Deposited Semi-Insulating Layer

Vertical Schottky barrier diodes based on an ion beam sputter (IBS)-deposited β-Ga2O3 film on a single-crystalline (2¯01) unintentionally doped (UID) β-Ga2O3 with a Ni contact were developed. To form ohmic Ti/Ni contacts, the IBS-Ga2O3/UID β-Ga2O3 structures were wet-etched, and an indium tin oxide (ITO) intermediate semiconductor layer (ISL) was deposited on the opposite surface of the UID β-Ga2O3. The IBS-deposited Ga2O3 layer was polycrystalline and semi-insulating. Low leakage currents, rectification ratios of 3.9 × 108 arb. un. and 3.4 × 106 arb. un., ideality factors of 1.43 and 1.24, Schottky barrier heights of 1.80 eV and 1.67 eV as well as breakdown voltages of 134 V and 180 V were achieved for diodes without and with ITO-ISL, respectively. The surface area of the IBS-Ga2O3 film acted as a thin dielectric layer and, together with the preliminary wet etching, provided low leakage currents and relatively high Schottky barrier heights. Diodes with a Schottky barrier based on a Ni/IBS-deposited Ga2O3 film contact were demonstrated for the first time.

Low resistance ohmic contact of multi-metallic Mo/Al/Au stack with ultra-wide bandgap Ga2O3 thin film with post-annealing and its in-depth interface studies for next-generation high-power devices

Ultra-wide band gap materials like β-Ga2O3 is considered as a potential candidate for power devices owing to their high breakdown voltage in contrast to the conventional semiconductors. The performance and the figure-of-merit for power devices critically depend on resistance offered by ohmic contact of metal with ultra-wide gap materials. However, high-quality ohmic contacts with Ga2O3 presents a significant challenge due to Fermi-level pinning and formation of Schottky barriers for the majority of metal contacts. Here, we investigated the electrical characteristics and interfacial reactions of Au/Al/Mo metal stack with β-Ga2O3 thin film at various annealing temperatures to demonstrate the ohmic contact formation mechanism. In-depth surface-sensitive XPS and UPS are employed to study the interface of metallic stack/Ga2O3 thin film. Our results indicate that post-annealing at high temperatures led to the intermixing of the metallic stack and results in the formation of binary intermetallic compounds of Al and Au. The intermetallic compound diffuses into the Ga2O3 layer and resulting in the creation of an oxygen-deficiency near the interface and helping to achieve contact resistance of 7.15 × 10−6 Ω cm2. This study establishes a robust foundation for the expanded utilization of Ga2O3 in power electronics and optoelectronics devices, emphasizing the vital role of interface engineering.

Influence of the content of stacked ZnO on the structural and optical properties of heterostructured ZnO/Ga2O3 films

The rising demand for heterojunction materials stimulated by the great achievements of modern nanotechnology has triggered enormous interests in the investigation of their materials properties. Heterostructured ZnO/Ga2O3 has been deployed for different device applications, but its several optical parameters have rarely been investigated. The present work attempts to investigate the influence of the thickness of stacked ZnO layer on the surface of Ga2O3 film. Optical parameters, such as absorption and extinction coefficient, Urbach energy, refractive index, dielectric constants, optical dispersion energy, single oscillator energy, static refractive index, oscillator strength, and oscillator wavelength of the ZnO/Ga2O3 films were studied. Morphological characterization showed microstructures of various shapes. Cross-section measurements showed that the thickness of the Ga2O3 layer remained approximately the same for all samples, while the thickness of the ZnO layer increased from 0 to 5.14 nm. Structural analysis revealed the coexistence of β-Ga2O3 and wurtzite ZnO crystal phases. UV–Vis absorption spectra demonstrated two distinct absorptions belonging to the β-Ga2O3 and ZnO. The bandgap of the composite ranged between 4.43 and 4.69 eV with an increase in the amount of ZnO at the surface. The absorption and extinction coefficient were in the order of 103 cm−1 and 10−5, respectively. The Urbach energy ranged between 0.688 and 1.125 eV. The refractive index was in the range 2.09–2.85, while the static refractive index ranged between 1.90 and 2.73. Also reported were other optical parameters, such as the real and imaginary dielectric constant, dispersive energy, single oscillator energy, oscillator strength, and oscillator wavelength.

Interface Properties of MoS2 van der Waals Heterojunctions with GaN.

The combination of the unique physical properties of molybdenum disulfide (MoS2) with those of gallium nitride (GaN) and related group-III nitride semiconductors have recently attracted increasing scientific interest for the realization of innovative electronic and optoelectronic devices. A deep understanding of MoS2/GaN interface properties represents the key to properly tailor the electronic and optical behavior of devices based on this heterostructure. In this study, monolayer (1L) MoS2 was grown on GaN-on-sapphire substrates by chemical vapor deposition (CVD) at 700 °C. The structural, chemical, vibrational, and light emission properties of the MoS2/GaN heterostructure were investigated in detail by the combination of microscopic/spectroscopic techniques and ab initio calculations. XPS analyses on as-grown samples showed the formation of stoichiometric MoS2. According to micro-Raman spectroscopy, monolayer MoS2 domains on GaN exhibit an average n-type doping of (0.11 ± 0.12) × 1013 cm-2 and a small tensile strain (ε ≈ 0.25%), whereas an intense light emission at 1.87 eV was revealed by PL analyses. Furthermore, a gap at the interface was shown by cross-sectional TEM analysis, confirming the van der Waals (vdW) bond between MoS2 and GaN. Finally, density functional theory (DFT) calculations of the heterostructure were carried out, considering three different configurations of the interface, i.e., (i) an ideal Ga-terminated GaN surface, (ii) the passivation of Ga surface by a monolayer of oxygen (O), and (iii) the presence of an ultrathin Ga2O3 layer. This latter model predicts the formation of a vdW interface and a strong n-type doping of MoS2, in closer agreement with the experimental observations.

Tunable electronic and optical properties of ferroelectric WS2/Ga2O3 heterostructures

To integrate two-dimensional (2D) materials into van der Waals heterostructures (vdWHs) is regarded as an effective strategy to achieve multifunctional devices. The vdWHs with strong intrinsic ferroelectricity is promising for applications in the design of new electronic devices. The polarization reversal transitions of 2D ferroelectric Ga2O3 layers provide a new approach to explore the electronic structure and optical properties of modulated WS2/Ga2O3 vdWHs. The WS2/Ga2O3↑ and WS2/Ga2O3↓ vdWHs are designed to explore possible characteristics through the electric field and biaxial strain. The biaxial strain can effectively modulate the mutual transition of two mode vdWHs in type II and type I band alignment. The strain engineering enhances the optical absorption properties of vdWHs, encompassing excellent optical absorption properties in the range from infrared to visible to ultraviolet, ensuring promising applications in flexible electronics and optical devices. Based on the highly modifiable physical properties of the WS2/Ga2O3 vdWHs, we have further explored the potential applications for the field-controlled switching of the channel in MOSFET devices.

Hydrogen-like Impurity States in β-Ga2O3/(AlxGa1−x)2O3 Core/Shell Nanostructures: Comparison between Nanorods and Nanotubes

The binding energy of an off-center hydrogen-like impurity in an ultra-wide band gap β-Ga2O3/(AlxGa1−x)2O3 core/shell nanostructure is studied using a variational method combined with a finite-difference algorithm. Four impurity states with the radial and axial quantum numbers being 0 or 1 in two kinds of core/shell nanostructures, including nanorods and double-walled nanotubes, are taken into account in the numerical calculations. The variation trends in binding energy corresponding to the four impurity states as functions of structural dimension and Al composition differ in nanorods and nanotubes when the impurity moves toward the interface between the Ga2O3 and (AlxGa1−x)2O3 layers. The quantum confinement due to the structural geometry has a considerable influence on the probability density of the impurity states as well as the impurity binding energy. The numerical results will pave the way toward theoretical simulation of the electron states in rapidly developing β-Ga2O3 low-dimensional material systems for optoelectronic device applications.

Self-powered Pt/a-Ga2O3/ITO vertical Schottky junction solar-blind photodetector with excellent detection performance.

Self-powered solar-blind photodetectors (PDs) are promising for military and civilian applications owing to convenient operation, easy preparation, and weak-light sensitivity. In the present study, the solar-blind deep-ultraviolet (DUV) photodetector based on amorphous Ga2O3 (a-Ga2O3) and with a simple vertical stack structure is proposed by applying the low-cost magnetron sputtering technology. By tuning the thickness of the amorphous Ga2O3 layer, the device exhibits excellent detection performance. Under 3 V reverse bias, the photodetector achieves a high responsivity of 671A/W, a high detectivity of 2.21 × 1015 Jones, and a fast response time of 27/11 ms. More extraordinary, with the help of the built-in electric field at the interface, the device achieves an excellent performance in detection when self-powered, with an ultrahigh responsivity of 3.69 A/W and a fast response time of 2.6/6.6 ms under 254 nm light illumination. These results demonstrate its superior performance to most of the self-powered Schottky junction UV photodetectors reported to date. Finally, the Pt/a-Ga2O3/ITO Schottky junction photodiode detector is verified as a good performer in imaging, indicating its applicability in such fields as artificial intelligence, machine vision, and solar-blind imaging.

Heterostructure formation of group-III sesquioxides via cation-exchange reactions with metal chloride gases

Thermodynamic analyses and experimental demonstrations were performed to investigate whether cation-exchange reactions (CERs) with metal chloride gases are a feasible technique for forming heterostructures of group-III sesquioxides. The thermodynamic analyses revealed the possibility of formation of aluminum oxide (Al2O3) layers on gallium oxide (Ga2O3) or indium oxide (In2O3) substrates via CERs with aluminum chloride gases, as well as formation of Ga2O3 layers on In2O3 substrates via CERs with gallium chloride gases, in a practical temperature range. However, CERs with gallium chloride gases or indium chloride gases did not occur on Al2O3 substrates, suggesting that heterostructures were not formed. On the basis of the results of the thermodynamic analyses, a CER was performed by the reaction of n-type β-Ga2O3(2̄01) substrates with aluminum trichloride gas, resulting in the formation of Al2O3 layers. Under optimal conditions, a dense (001)-oriented κ-Al2O3 layer with a thickness of 30 nm was formed and served as an excellent gate oxide in metal–oxide–semiconductor devices. The relative dielectric constant of κ-Al2O3 was obtained via capacitance–voltage measurements, and a high value of ∼22 was obtained in the several tens of kHz band. CERs using metal chloride gases open a new method for forming heterostructures of group-III sesquioxides.

"Blue-free" orange ZnO-related light-emitting diode based on a natural interface layer of Ga2O3 and ZnGa2O4.

To fabricate a ZnO-related light-emitting diode (LED) with zero emission at blue wavelengths ("blue-free"), an ingenious strategy is employed. Specifically, for the first time to the best of our knowledge, a natural oxide interface layer, possessing remarkable visible emission potential, is introduced into the Au/i-ZnO/n-GaN metal-insulator-semiconductor (MIS) structure. The unique Au/i-ZnO/interface layer/n-GaN structure successfully eliminated the harmful blue emissions (400-500 nm) from the ZnO film, and the remarkable orange electroluminescence is mainly attributed to the impact ionization process of the natural interface layer at high electric field. It is worth mentioning that the device achieved ultra-low color temperature (2101 K) and excellent color rendering index (92.8) under electrical injection, indicating that the device could fulfill the requirements of electronic display systems and general illumination, and might even play unexpected roles in special lighting domains. The results obtained provide a novel and effective strategy for the design and preparation of ZnO-related LEDs.

Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study

The crystallographic structure of thin Ga2O3 layers grown by metal–organic vapour phase epitaxy on Al2O3 substrate was analyzed by Rutherford Backscattering Spectrometry/Channeling (RBS/C) angular yield scans performed around the c-axis of as-grown Ga2O3. The measured widths and minimum yields of the scan curves for the Ga and O component were compared to calculations based on the continuum steering potential model. The results obtained are consistent with a crystal structure containing oxygen atoms arranged in a 4H hexagonal closely packed lattice and Ga atoms preferentially occupying octahedral interstitial sites in the 4H cells - a structure closely related to the ε-Ga2O3 polymorph. After high-temperature annealing remarkable structural transformation is detected via significant changes in the RBS/C spectra. This effect is related to the hexagonal-monoclinic, i.e., ε-β phase transformation of Ga2O3. Spectroscopic ellipsometry spectra of as-grown and annealed samples can be best fitted using a vertically graded single-layer B-spline model. Significant differences in the dielectric functions were found, showing bandgap reduction for long term annealing. These features are related to the ε-β polymorphic transformation, variation of the preferred crystallographic orientation upon annealing, and differences in residual strain and defect structure determined by the annealing conditions.

Field-Effect Passivation of the Cu2O/ZnO Transparent Heterojunction Photovoltaic Device Using Ga2O3 Thin Film

Photovoltaics (PV) would be more promising if light could generate electric power invisibly. This will endow more degrees of freedom to PV cells for wide-range deployment. Transparent photovoltaic (TPV) devices are the groundwork of the building-integrated photovoltaic (BIPV) systems that provide aesthetics to the buildings and solar energy convertor modules. TPV is adequate for the BIPV system of windows. Heterojunctions between p-type Cu2O and n-type ZnO have emerged as one of the most promising TPV devices. However, their inadequate transparency and a deficit of open-circuit voltage (VOC) and short-circuit current density (JSC) remained an open challenge. In this work, we have fabricated a thin Ga2O3 buffer layer embedded transparent ZnO/Cu2O heterojunction photovoltaic device, showing an average visible transmittance of more than 50%. The insertion of the Ga2O3 buffer layer remarkably increases the JSC and VOC to ∼860% and ∼41%, respectively. The TPV device also demonstrated a high JSC of 3.41 mA/cm2 under UV light. The Ga2O3 layer provides a graded conduction band alignment and passivates the interface by the field-effect passivation mechanism. The Ga2O3 buffer layer embedded device also demonstrated a broadband photodetection with remarkably high responsivity and detectivity of 250 mA/W and 5 × 1011 Jones at self-biased conditions.

Ga2O3@Al2O3 Core–Shell Nanowires for High-Performance Solar-Blind Photodetectors

High-performance solar-blind photodetectors (SBPDs) have been indispensable in both military and civilian applications. Herein, Ga2O3@Al2O3 core–shell nanowires (NWs) are synthesized by plasma-enhanced atomic layer deposition (PEALD) Al2O3 layer on the surface of Ga2O3 nanowires. The Ga2O3@Al2O3 NW has a length of tens of micrometers, and the thickness of Ga2O3 and Al2O3 layers in the NW is approximately 30 and 5 nm, respectively. The PEALD method passivates surface defects to improve the crystal quality of Ga2O3. The metal–semiconductor–metal (MSM) Ga2O3@Al2O3 NW-based SBPDs exhibit a superhigh sensitivity of 1.07 × 103 A/W and a high response speed of less than 83 ms at 5 V bias voltage under 254 nm irradiation. Additionally, the Ga2O3@Al2O3 NW PDs exhibit a superhigh specific detectivity of 3.38 × 1011 Jones, an external quantum efficiency (EQE) of 5.22 × 105%, and a high deep ultraviolet (DUV)/visible responsivity rejection ratio (R254/405) of 4.81 × 102. These results suggest that this method is an effective way to design and prepare high-performance photonic devices.

Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristors.

Two-dimensional (2D) metal oxides exhibit extraordinary mechanical and electronic properties, leading to new paradigms in the design of electronic and optical systems. However, as a representative, a 2D Ga2O3-based memristor has rarely been touched, which is hindered by challenges associated with large-scale material synthesis. In this work, the ultrathin 2D Ga2O3 layer (∼3 nm thick) formation on the liquid gallium (Ga) surface is transferred with lateral dimensions over several centimeters on a substrate via the squeeze-printing strategy. 2D Ga2O3-based memristors exhibit forming-free and bipolar switching behaviors, which also reveal essential functions of biological synapse, including paired-pulse facilitation, spiking timing-dependent plasticity, and long-term depression and potentiation. These results demonstrate the potential of 2D Ga2O3 material for neuromorphic computing and open up an avenue for future electronics application, such as deep UV photodetectors, multimode nanoresonators, and power switching devices.

Ohmic contact structures on β-Ga2O3 with n+ β-Ga2O3 pulsed laser deposition layers

Thin (40–150 nm), highly doped n+ (1019–1020 cm−3) Ga2O3 layers deposited using pulsed laser deposition (PLD) were incorporated into Ti/Au ohmic contacts on (001) and (010) β-Ga2O3 substrates with carrier concentrations between 2.5 and 5.1 × 1018 cm−3. Specific contact resistivity values were calculated for contact structures both without and with a PLD layer having different thicknesses up to 150 nm. With the exception of a 40 nm PLD layer on the (001) substrate, the specific contact resistivity values decreased with increasing PLD layer thickness: up to 8× on (001) Ga2O3 and up to 16× on (010) Ga2O3 compared with samples without a PLD layer. The lowest average specific contact resistivities were achieved with 150 nm PLD layers: 3.48 × 10−5 Ω cm2 on (001) Ga2O3 and 4.79 × 10−5 Ω cm2 on (010) Ga2O3. Cross-sectional transmission electron microscopy images revealed differences in the microstructure and morphology of the PLD layers on the different substrate orientations. This study describes a low-temperature process that could be used to reduce the contact resistance in Ga2O3 devices.

Examination of proper impurity doping and annealing conditions for solution processed Ga2O3 thin films

We investigated a method to improve the resistivity of Ga2O3 thin films using a wet-process and controlling the Sn-doping conditions. Undoped and Sn-doped single layer Ga2O3 thin films were prepared by changing the solution concentration, the annealing time, the rate of temperature rise, and the speed of the sample rotation in spin coating during deposition. As a result, the films were deposited uniformly with good crystallinity and transmittance and relatively small surface roughness. To improve the resistivity by another Sn-doping method, we prepared bilayer samples consisting of undoped Ga2O3 and SnO2 layers in which Sn atoms can diffuse into the Ga2O3 layer through annealing, i.e. the drive-in diffusion method. Although the changed resistivity, X-ray electron spectroscopy (XPS) and transmission electron microscope, energy dispersion X-ray spectroscopy measurements revealed that Al diffused from the sapphire substrate, indicating a mixed β-(Ga,Al)2O3 was prepared. By changing the annealing temperature to 800 °C, Al diffusion was suppressed and pure Ga2O3 thin films were prepared. After investigating various conditions of the annealing atmosphere, we found that samples annealed in a nitrogen atmosphere for both Ga2O3 and SnO2 showed the lowest resistivity.

Thickness Study of Ga2O3 Barrier Layer in p-Si/n-MgZnO:Er/Ga2O3/ZnO:In Diode

The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated through spray pyrolysis deposition at 450 °C with aqueous solutions containing magnesium nitrate, zinc acetate, erbium acetate, gallium nitrate, and indium nitrate precursors. The effects of Ga2O3 layer thickness on the diode properties were investigated. For the deposited films, a combined tiny hexagonal slices and small blocks surface morphology was characterized by scanning electron microscopy for all samples. Diodes were formed after In and Ag deposition on the back side and top side, respectively. The current-voltage characteristics and luminescence spectra are studied. With the increasing of Ga2O3 thickness, the diode forward bias resistance increases while the reverse biased dark current shows the decrease-increase characters. The Er ion corresponded green light emission was characterized for the diode under reverse biased breakdown condition. The increased luminescent intensity with low turn-on current behaviors was characterized by the diode with a Ga2O3 thickness of 4.9 nm. With the diode electrical and luminescence analysis, the effect of the Ga2O3 barrier layer on the diode was discussed. The Ga2O3 barrier layer improves performance for rare earth-related light-emitting devices.

RF and Linearity Analysis of Heterojunction-free Ga2O3 FINFET with Respect to Different Fin Widths and Temperatures

In this paper we have proposed a Heterojunction free Ga2O3 FinFET, and the different electrical characteristics have been analysed. Fin width is one of the most important parameters for the device performance, hence all the electrical charaterstics have been analysed for different fin widths. Temperature is one of the most important considerations for high power applications and hence electrical characteristics have been analysed by varying temperature also. Here, in the work done an exhaustive study on the RF and Linearity analysis on Heterojunction-free Ga2O3 layer FINFET using TCAD device simulator is demonstrated. The impact when varying the widths of fin along with the temperature variation for the device on various RF parameters like Drain current, gm (Transconductance), gd (output Conductance), Cgs and Cgd (gate capacitances), fT (cut-off frequency) are studied. The same has been performed even to calculate different linearity parameters such as gm2, gm3, VIP3, IIP3, IMD3, 1db compression point. It’s observed that to have high value for fin width and to have lower temperature value is much worthier for RFIC applications. In order to exhibit the superiority of the Ga2O3 FINFET it has been compared with the SOI FINFET.

MOCVD-grown β-Ga2O3 as a Gate Dielectric on AlGaN/GaN-Based Heterojunction Field Effect Transistor

We report the electrical properties of Al0.3Ga0.7N/GaN heterojunction field effect transistor (HFET) structures with a Ga2O3 passivation layer grown by metal–organic chemical vapor deposition (MOCVD). In this study, three different thicknesses of β-Ga2O3 dielectric layers were grown on Al0.3Ga0.7N/GaN structures leading to metal-oxide-semiconductor-HFET or MOSHFET structures. X-ray diffraction (XRD) showed the (2¯01) orientation peaks of β-Ga2O3 in the device structure. The van der Pauw and Hall measurements yield the electron density of ~ 4 × 1018 cm−3 and mobility of ~770 cm2V−1s−1 in the 2-dimensional electron gas (2DEG) channel at room temperature. Capacitance–voltage (C-V) measurement for the on-state 2DEG density for the MOSHFET structure was found to be of the order of ~1.5 × 1013 cm−2. The thickness of the Ga2O3 layer was inversely related to the threshold voltage and the on-state capacitance. The interface charge density between the oxide and Al0.3Ga0.7N barrier layer was found to be of the order of ~1012 cm2eV−1. A significant reduction in leakage current from ~10−4 A/cm2 for HFET to ~10−6 A/cm2 for MOSHFET was observed well beyond pinch-off in the off-stage at -20 V applied gate voltage. The annealing at 900° C of the MOSHFET structures revealed that the Ga2O3 layer was thermally stable at high temperatures resulting in insignificant threshold voltage shifts for annealed samples with respect to as-deposited (unannealed) structures. Our results show that the MOCVD-gown Ga2O3 dielectric layers can be a strong candidate for stable high-power devices.

Enhancing the UV Response of All-Inorganic Perovskite Photodetectors by Introducing the Mist-CVD-Grown Gallium Oxide Layer

All-inorganic perovskites, with their low-cost, simple processes and superior heat stability, have become potential candidate materials for photodetectors (PDs). However, they have no representative responsivity in the deep-ultraviolet (UV) wavelength region. As a new-generation semiconductor, gallium oxide (Ga2O3), which has an ultrawide bandgap, is appropriate for solar-blind (200 nm–280 nm) deep-UV detection. In this work, ultrawide-bandgap Ga2O3 was introduced into an inorganic perovskite device with a structure of sapphire/β-Ga2O3/Indium Zinc Oxide (IZO)/CsPbBr3. The performance of this perovskite PD was obviously enhanced in the deep UV region. A low-cost, vacuum-free Mist-CVD was used to realize the epitaxial growth of β-Ga2O3 film on sapphire. By introducing the Ga2O3 layer, the light current of this heterojunction PD was obviously enhanced from 10−8 to 10−7, which leds its detectivity (D*) to reach 1.04 × 1012 Jones under a 254 nm light illumination with an intensity of 500 μW/cm2 at a 5 V bias.

Liquid metal gallium-based printing of Cu-doped p-type Ga2O3 semiconductor and Ga2O3 homojunction diodes

As a promising third-generation semiconductor, gallium oxide (Ga2O3) is currently facing bottleneck for its p-type doping. The doping process of conventional semiconductors usually introduces trace impurities, which is a major technical problem in the electronics industry. In this article, we conceived that the process complexity could be significantly alleviated, and a high degree of control over the results could be attained using the selective enrichment of liquid metal interfaces and harvesting the doped metal oxide semiconductor layers. An appropriate mechanism is thus proposed to prepare the doped semiconducting based on multicomponent liquid metal alloys. Liquid metal alloys with the certain Cu weight ratios in bulk are utilized to harvest Cu-doped Ga2O3 films, which result in p-type conductivity. Then, field-effect transistors were integrated using the printed p and n-type Ga2O3 films and demonstrated to own excellent electrical properties and stability. Au electrodes fabricated on the printed Ga2O3 and Cu-doped Ga2O3 layers showed good Ohmic behavior. Furthermore, high-power diodes are realized using printed p and n-type Ga2O3 homojunction through combining van der Waals stacking with transfer printing. The fabricated Ga2O3 homojunction diode exhibited good efficiency at room temperature, involving a rectification ratio of 103 and forward current density at 10 V (J@10 V) of 1.3 mA. This opens the opportunity for the cost-effective creation of semiconductor films with controlled metal dopants. The process disclosed here suggests important strategies for further synthesis and manufacturing routes in electronics industries.