Future High Energy Physics Research Articles

Radiation hardness investigation of thin and low resistivity bulk Si detectors

Abstract Silicon detectors are being widely used in high energy physics (HEP) experiments as tracking and vertexing elements since the last three decades. The technology development is critical to maintain the performance of Si detectors in high radiation environment of the future HEP experiments. Owing to their better ability for higher charge collection efficiency and internal charge multiplication, there has been an increased interest for the relatively higher bulk doping density (1013–1014 cm−3 ) Si sensors. However, detailed investigations are required for studying the radiation damage effects on these low resistivity devices. In the present work, we report a systematic TCAD simulation study for the effect of proton fluence (up to 3 × 10 15 n eq .cm−2 ) on charge collection efficiency, leakage current and electric field distribution etc. of p-type Si diodes of varied thicknesses. A two trap proton damage model (Delhi model) is used to implement the radiation damage within TCAD framework. The results show promising future for these devices.

Slow Scintillation Suppression in Yttrium Doped BaF2 Crystals

Barium fluoride (BaF2) crystal has a fast scintillation light peaked at 195 and 220 nm with a sub-ns decay time. This ultrafast scintillation promises a wide application in an area where extreme fast timing is important, such as future high-energy physics experiments, gigahertz hard X-ray imaging, and time-of-flight positron emission tomography. BaF2 crystal, however, has also a slow scintillation component peaked at 310 nm with a decay time of about 600 ns, which causes pileup. Suppression of the slow scintillation component by selective doping, such as Ce, La, Tm, and Y, was discussed 20 years ago. In this paper, we report suppression of the slow component in BaF2 crystals by yttrium doping. Single crystals with 1 at% Y doping were grown by vacuum Bridgman technique at the Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, China. Their radioluminescence, optical transmittance, light output, fast/slow ratio, decay kinetics, and light response uniformity were measured. The results show that 1 at% Y doping suppresses the slow scintillation component in BaF2 crystals by a factor of 6, while the fast component remains unaffected.

Electron acceleration through two successive electron beam driven wakefield acceleration stages

Structure based wakefield acceleration may provide a viable approach for accelerating sufficiently large numbers of electrons and positrons at the high gradient needed to meet the luminosity, efficiency, and cost requirements of a future linear collider. An important step in proving its viability is the demonstration of acceleration in multiple stages. Here we show the results of the first experimental demonstration of staged two beam wakefield acceleration, conducted at the Argonne Wakefield Accelerator Facility (AWA), in which a 0.5 nC electron bunch gained equal amounts of energy in two stages (∼2.4 MeV per stage, corresponding to an average acceleration gradient of ∼70 MeV/m). Meanwhile 150MeV/m of acceleration in a single stage has been achieved. The demonstration experiment should be scalable to staged-acceleration at gradients of the order of 200 to 300 MeV/m. Such a development would considerably reduce both the cost and footprint of both a future high-energy physics (HEP) collider, as well as future X-ray light sources.

Proton-Induced Radiation Damage in BaF2, LYSO, and PWO Crystal Scintillators

Future high-energy physics experiments at the energy and intensity frontiers will face a challenge of severe radiation environment from both ionization dose and charged and neutral hadrons. The high-luminosity large hadron collider, for example, will present an environment, where up to 130 Mrad ionization dose, $3 \times 10^{14}$ charged hadrons/cm2 and $5 \times 10^{15}$ neutrons/cm2 are expected. In this paper, we report our investigation on charged hadron-induced radiation damage in BaF2, LYSO/LFS, and PWO crystals up to $3 \times 10^{15}$ protons/cm2 by using 800-MeV protons at the Los Alamos Neutron Science Center. Comparison is made between radiation damages induced by protons and ionization dose alone.

Performance of Crystal Scintillators in a Severe Radiation Environment Caused by Protons

Future high energy physics experiments at the energy and intensity frontiers will face challenges from a severe radiation environment caused by both ionization dose and charged and neutral hadrons. This paper reports an investigation on proton induced radiation damage in various crystal scintillators. Large size BGO, LFS and PWO crystals of 18 to 22 cm long were irradiated by 800 MeV protons up to 3 × 1015 p/cm2 at the WNR facility of LANSCE with longitudinal transmittance measured in situ. LYSO plates of 14 × 4 × 1.5 mm3 were irradiated by 24 GeV protons up to 8.2 × 1015 p/cm2 at the IRRAD facility of CERN. Degradations in both transmittance and light output are reported. The results show an excellent radiation hardness of LYSO/LFS crystals against charged hadrons.

Radiation Damage in Silicon Photonic Mach–Zehnder Modulators and Photodiodes

Radiation-hard optical links are the backbone of read-out systems in high-energy physics (HEP) experiments at CERN. The optical components must withstand large doses of radiation and strong magnetic fields and provide high data rates. Radiation hardness is one of the requirements that become more demanding with every new generation of HEP experiment. Previous studies have shown that vertical cavity surface emitting lasers, on which the current optical links are based, will not be able to withstand the expected radiation levels in the innermost regions of future HEP experiments. Silicon photonics (SiPh) is currently being investigated as a promising alternative technology to address this challenge. We irradiated SiPh Mach-Zehnder modulators (MZMs) with different design parameters to evaluate their resistance against ionizing radiation. We confirm that SiPh MZMs with a conventional design do not show a phase shift degradation when exposed to a 20-MeV neutron fluence of $3\cdot 10^{16}~{\rm n/cm^{2}}$ . We further demonstrate that custom-designed MZMs with shallow etch optical waveguides and high doping concentrations in their p-n junctions exhibit a strongly improved radiation hardness over devices with a conventional design when irradiated with X-rays. We also found that MZMs withstood higher radiation levels when they were irradiated at a low temperature. In contrast, larger reverse biases during irradiation led to a faster device degradation. Simulations indicate that a pinch-off of holes is responsible for the device degradation. Photodiodes (PDs) were also tested for their radiation hardness as they are needed in silicon photonic transceivers. X-ray irradiation of building-block germanium-silicon PDs showed that they were not significantly affected.

Design and Assessment of a 2.5-Gb/s Optical Wireless Transmission System for High Energy Physics

We designed, realized, and tested a 2.5-Gb/s optical wireless communication (OWC) system prototype, that should be employed in high energy physics (HEP) experiments, such as the compact muon solenoid (CMS). The system consists of off-the-shelf components, mainly a vertical cavity surface emitting laser (VCSEL) and a PIN photodiode with a proper ball lens. Since it should be used to transmit data among particle sensors in neighboring rings of the CMS, its target distance is 10 cm. Its most attractive feature is that it does not require a (complex) active tracking system because its measured tolerance to misalignment is around <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\pm$</tex-math> </inline-formula> 1 mm (at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$10^{-12}$</tex-math></inline-formula> bit error rate). We also report the X-rays irradiation tests of all components (Quartz lens, VCSEL, and PIN photodiode): None of them showed any degradation up till 238-Mrad (Si) dose. These results indicate that the designed OWC can be a viable solution for future HEP experiments.

U.S. Involvement in the LHC

The demise of the SSC in the U.S. created an upheaval in the U.S. high energy physics (HEP) community. The subsequent redirection of HEP efforts to the CERN Large Hadron Collider (LHC) can perhaps be seen as informing on possible future paths for worldwide collaboration on future HEP megaprojects.

A combined surface and bulk TCAD damage model for the analysis of radiation detectors operating at HL-LHC fluences

In this work we present the development and the application of a new TCAD modelling scheme to simulate the effects of radiation damage on silicon radiation detectors at the very high fluence levels expected at High Luminosity LHC (up to 2 × 1016 1MeV n/cm2). In particular, we propose a combined approach for the analysis of the surface effects (oxide charge build-up and interface trap states introduction) as well as bulk effects (deep level traps and/or recombination centers introduction). Experimental measurements have been carried out aiming at: i) extraction from simple test structures of relevant parameters to be included within the TCAD model and ii) validation of the new modelling scheme through comparison with measurements of different test structures (e.g. different technologies) before and after irradiation. The good agreements between experimental measurements and simulation findings foster the suitability of the TCAD modelling approach as a predictive tool for investigating the radiation detector behavior at different fluences and operating conditions. This would allow the design and optimization of innovative 3D and planar silicon detectors for future HL-LHC High Energy Physics experiments.

A system-level model for high-speed, radiation-hard optical links in HEP experiments based on silicon Mach-Zehnder modulators

Silicon Mach-Zehnder modulators have been shown to be relatively insensitive to displacement damage beyond a 1-MeV-equivalent neutron fluence of 3⋅1016n/cm2. Recent investigations on optimized device designs have also led to a high resistance against total ionizing dose levels of above 1 MGy. Such devices could potentially replace electrical and/or optical links close to the particle interaction points in future high energy physics experiments. Since they require an external continuous-wave light source, radiation-hard optical links based on silicon Mach-Zehnder modulators need to have a different system design when compared to existing directly modulated laser-based optical links. 10 Gb/s eye diagrams of irradiated Mach-Zehnder modulators were measured. The outcomes demonstrate the suitability for using these components in harsh radiation environments. A proposal for the implementation of silicon Mach-Zehnder modulators in CERN's particle detectors was developed and a model to calculate the system performance is presented. The optical power budget and the electrical power dissipation of the proposed link is compared to that of the upcoming Versatile Link system that will be installed in 2018.

Fiber and crystals dual readout calorimeters

The RD52 (DREAM) collaboration is performing R&amp;D on dual readout calorimetry techniques with the aim of improving hadronic energy resolution for future high energy physics experiments. The simultaneous detection of Cherenkov and scintillation light enables us to measure the electromagnetic fraction of hadron shower event-by-event. As a result, we could eliminate the main fluctuation which prevented from achieving precision energy measurement for hadrons. We have tested the performance of the lead and copper fiber prototypes calorimeters with various energies of electromagnetic particles and hadrons. During the beam test, we investigated the energy resolutions for electrons and pions as well as the identification of those particles in a longitudinally unsegmented calorimeter. Measurements were also performed on pure and doped PbWO4 crystals, as well as BGO and BSO, with the aim of realizing a crystal based dual readout detector. We will describe our results, focusing on the more promising properties of homogeneous media for the technique. Guidelines for additional developments on crystals will be also given. Finally we discuss the construction techniques that we have used to assemble our prototypes and give an overview of the ones that could be industrialized for the construction of a full hermetic calorimeter.

Improvement to the signaling interface for CMOS pixel sensors

The development of the readout speed of CMOS pixel sensors (CPS) is motivated by the demanding requirements of future high energy physics (HEP) experiments. As the interface between CPS and the data acquisition (DAQ) system, which inputs clock from the DAQ system and outputs data from CPS, the signaling interface should also be improved in terms of data rates. Meanwhile, the power consumption of the signaling interface should be maintained as low as possible. Consequently, a reduced swing differential signaling (RSDS) driver was adopted instead of a low-voltage differential signaling (LVDS) driver to transmit data from CPS to the DAQ system. In order to increase the capability of data rates, a serial source termination technique was employed. A LVDS/RSDS receiver was employed for transmitting clock from the DAQ system to CPS. A new method of generating hysteresis and a special current comparator were used to achieve a higher speed with lower power consumption. The signaling interface was designed and submitted for fabrication in a 0.18µm CMOS image sensor (CIS) process. Measurement results indicate that the RSDS driver and the LVDS receiver can operate correctly at a data rate of 2Gb/s with a power consumption of 19.1mW.

Luminescence rise time in self-activated PbWO4 and Ce-doped Gd3Al2Ga3O12 scintillation crystals

The time resolution of scintillation detectors of ionizing radiation is one of the key parameters sought for in the current and future high-energy physics experiments. This study is encouraged by the necessity to find novel detection methods enabling a sub-10-ps time resolution in scintillation detectors and is focused on the exploitation of fast luminescence rise front. Time-resolved photoluminescence (PL) spectroscopy and thermally stimulated luminescence techniques have been used to study two promising scintillators: self-activated lead tungstate (PWO, PbWO4) and Ce-doped gadolinium aluminum gallium garnet (GAGG, Gd3Al2Ga3O12). A sub-picosecond PL rise time is observed in PWO, while longer processes in the PL response in GAGG:Ce are detected and studied. The mechanisms responsible for the PL rise time in self-activated and doped scintillators are under discussion.

Study the radiation damage effects in Si microstrip detectors for future HEP experiments

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

Radiation Tolerance of LuAG:Ce and YAG:Ce Crystals Under High Levels of Gamma- and Proton-Irradiation

The extremely harsh conditions, in which the detectors will have to operate during the High Luminosity phase of the Large Hadron Collider at CERN, set stringent requirements on the properties of the scintillators which can be used. Among different scintillating materials under study, inorganic crystals such as LuAG:Ce and YAG:Ce represent good candidates for such application. A detailed investigation of the radiation hardness of LuAG:Ce and YAG:Ce crystal samples ( $1 \times 1 \times 1 ~\hbox{cm}^3$ cubes) produced by Crytur is presented in this study. Given their potential in many calorimeter designs, YAG:Ce samples with high aspect ratio ( $1 \times 1 \times 14 ~\hbox{cm}^3$ ) have also been tested. Optical and scintillating properties of the samples were studied before and after irradiation with different sources and at different intensities. Irradiation with gamma-rays to the doses of 1 and 100 kGy and with 24 GeV protons up to an integrated fluence of ${10^{14}}~\hbox{cm}^{ - 2}$ were performed at CERN. The scintillating properties of the crystals, as emission and excitation spectra and light yield remained unchanged after irradiation and only small levels of induced absorption were observed. The results obtained in this test confirm the potential of LuAG:Ce and YAG:Ce crystals as good candidates for calorimetry applications in future high energy physics experiments.

65 nm CMOS analog front-end for pixel detectors at the HL-LHC

This work is concerned with the design and the experimental characterization of analog front-end electronics conceived for experiments with unprecedented particle rates and radiation levels at future high-energy physics colliders. A prototype chip integrating different test structures has been submitted in the framework of the CHIPIX65 project. These structures are standalone channels for the readout of hybrid pixels, featuring a charge sensitive preamplifier as the first stage of the readout chain, a high-speed comparator and a circuit for fine threshold tuning. The paper thoroughly discusses the results, mainly focused on the charge sensitive amplifier, coming from the characterization of the submitted test structures.

Design, fabrication and characterization of multi-guard-ring furnished [formula omitted] silicon strip detectors for future HEP experiments

Si detectors, in various configurations (strips and pixels), have been playing a key role in High Energy Physics (HEP) experiments due to their excellent vertexing and high precision tracking information. In future HEP experiments like upgrade of the Compact Muon Solenoid experiment (CMS) at the Large Hadron Collider (LHC), CERN and the proposed International Linear Collider (ILC), the Si tracking detectors will be operated in a very harsh radiation environment, which leads to both surface and bulk damage in Si detectors which in turn changes their electrical properties, i.e. change in the full depletion voltage, increase in the leakage current and decrease in the charge collection efficiency. In order to achieve the long term durability of Si-detectors in future HEP experiments, it is required to operate these detectors at very high reverse biases, beyond the full depletion voltage, thus requiring higher detector breakdown voltage. Delhi University (DU) is involved in the design, fabrication and characterization of multi-guard-ring furnished ac-coupled, single sided, p+n−n+ Si strip detectors for future HEP experiments. The design has been optimized using a two-dimensional numerical device simulation program (TCAD-Silvaco). The Si strip detectors are fabricated with eight-layers mask process using the planar fabrication technology by Bharat Electronic Lab (BEL), India. Further an electrical characterization set-up is established at DU to ensure the quality performance of fabricated Si strip detectors and test structures. In this work measurement results on non irradiated Si Strip detectors and test structures with multi-guard-rings using Current Voltage (IV) and Capacitance Voltage (CV) characterization set-ups are discussed. The effect of various design parameters, for example guard-ring spacing, number of guard-rings and metal overhang on breakdown voltage of test structures have been studied.

Development of Silicon Sensor Characterization System for Future High Energy Physics Experiments

The Compact Muon Solenoid (CMS) is one of the general purpose experiments at the Large Hadron Collider (LHC), CeRN and has its tracker built of all silicon strip and pixel sensors. Si sensors are expected to play extremely important role in the upgrades of the existing tracker for future high luminosity environment and will also be used in future lepton colliders. however, properties of the silicon sensors have to be carefully understood before they can be put in the extremely high luminosity condition. At Delhi university (DU), we have been working on the development of Si sensor characterization system, as part of the collaboration with the CMS experiment and RD50 collaboration. this works reports the installation of current-voltage (I-V) and capacitance-voltage (C-V) systems at DU.

SOIPIX R&D programme and applications

SOIPiX is a R&D project targeting the development of monolithic pixel detectors with Silicon On Insulator technology for future high energy physics experiments, X-ray experiments, and other applications. It integrates both radiation sensors and LSI circuits in one chip to achieve high resolution and intelligent detectors. After a short introduction about the advantages of monolithic active pixel sensors, the main characteristics of SOI monolithic sensors will be discussed: technological process, response to incident radiation and radiation hardness. Special attention will be given to the description of the so-called “back-gate” effect and the different techniques developed to mitigate it. Finally, various applications of this technology will be presented.

Scintillation counters in modern high-energy physics experiments (Review)

Scintillation counters (SCs) based on organic plastic scintillators (OPSs) are widely used in modern high-energy physics (HEP) experiments. A comprehensive review is given to technologies for production of OPS strips and tiles (extrusion, injection molding, etc.), optical and physical characteristics of OPSs, and methods of light collection based on the use of wavelength-shifting (WLS) fibers coupled to multipixel vacuum and silicon PMs. Examples are given of the use of SCs in modern experiments involved in the search for quarks and new particles, including the Higgs boson (D0, CDF, ATLAS, CMS), new states of matter (ALICE), CP violation (LHCb, KLOE), neutrino oscillations (MINOS, OPERA), and cosmic particles in a wide mass and energy interval (AMS-02). Scintillation counters hold great promise for future HEP experiments (at the ILC, NICA, FAIR) due to properties of a high segmentation, WLS fiber light collection, and multipixel silicon PMT readout.