Radiation hardness investigation of thin and low resistivity bulk Si detectors

Abstract

Abstract Silicon detectors are being widely used in high energy physics (HEP) experiments as tracking and vertexing elements since the last three decades. The technology development is critical to maintain the performance of Si detectors in high radiation environment of the future HEP experiments. Owing to their better ability for higher charge collection efficiency and internal charge multiplication, there has been an increased interest for the relatively higher bulk doping density (1013–1014 cm−3 ) Si sensors. However, detailed investigations are required for studying the radiation damage effects on these low resistivity devices. In the present work, we report a systematic TCAD simulation study for the effect of proton fluence (up to 3 × 10 15 n eq .cm−2 ) on charge collection efficiency, leakage current and electric field distribution etc. of p-type Si diodes of varied thicknesses. A two trap proton damage model (Delhi model) is used to implement the radiation damage within TCAD framework. The results show promising future for these devices.