Future Electronics Research Articles

Production of Pc(4312) state in electron-proton collisions

We study the cross sections for the electro-production of $P_c(4312)$ particle, a recently discovered pentaquark state, in electron-proton collisions assuming possible quantum numbers to be $J^{P}=\frac{1}{2}^\pm, \frac{3}{2}^\pm$. $\sqrt{s}$ is set to the energy of the future Electron Ion Collider at Brookhaven National Laboratory, in order to asses the possibility of the measurement in this facility. One can discriminate the spin of $P_c(4312)$ by comparing the pseudorapidity distribution in two different polarization configurations for proton and electron beams. Furthermore, the parity of $P_c(4312)$ can be discerned by analyzing the decay angle in the $P_c \rightarrow p +J/\psi$ channel. As the multiplicity of $P_c$ production in our calculation is large, the EIC can be considered as a future facility for precision measurement of heavy pentaquarks.

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors.

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high‐performance field‐effect transistors. By ALD various n‐type and p‐type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge‐transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure–property relations can be proposed, which can help to design better‐performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.

Fabrication of multilayer film with graphene oxide of different surface charge through electrospray deposition

Due to its notable mechanical and electrical properties, graphene has high-value-added applications in future flexible electronics. The preparation of ultrathin uniform graphene oxide (GO) multilayer film through simple and cost-effective technique still is concern. Herein, we have demonstrated the electrospray deposition (ESD) method to prepare the uniform alternative GO multilayer film with controlled thickness by alternatively depositing the different surface charge. It is a solution-processed technique that can be applied in a variety of practical applications due to low-cost and high-speed processing time. Colloidal nanoparticles, which is deposited through ESD technique, have different physical and optical properties based on surface charge. Owing to the electrostatic repulsion between the functional groups, GO can be well soluble, homogeneous and stable dispersion. The prepared alternated rGO films enhanced the sheet resistance because of improving electrical conductivity. Furthermore, alternated rGO film is utilized in the symmetric supercapacitor and the device exhibit a larger capacitance of 103.5 F/g at 0.5 A/g and good cycling stability (94%) on the account of high conductivity than that of other prepared rGO based films. These attributes of ultra-thin rGO film underscore the potential of the current method towards the understanding of film-based supercapacitors in a numerous energy storage applications.

Flexible h-BN/fluorinated poly (arylene ether nitrile) fibrous composite film with low dielectric constant and high thermal conductivity fabricated via coaxial electrospinning hot-pressing technique

The rapid development of electronics puts forward higher requirements on the low dielectric materials. Especially, the polymer-based dielectric film with low dielectric constant, high thermal conductivity, and heat-resistance is essential to the flexible electronics. However, the balance of these intended performance is still a big challenge. In this work, we reported the flexible poly (arylene ether nitrile) (PEN) fibrous composite film with low dielectric constant and high thermal conductivity by coaxial electrospinning hot-pressing technique. Interestingly, such bi-functional fibrous composite film was rationally designed by using hexagonal boron nitride (h-BN)/fluorinated PEN (PEN-F) as shell layer and polyvinylpyrrolidone (PVP) as the core layer of fibers, which could further form the porous, hollow, and balsam pear-shaped structure after the hot-pressing and dissolution process. Owing to introduction of the h-BN nanosheets, intrinsic fluorine groups of PEN-F, and hollow nanofiber structure, the dielectric constant and dielectric loss of fibrous composite film could be as low as 1.74 and 0.0092 at 1 kHz, respectively. Furthermore, the in-plane thermal conductivity of fibrous composite film could reach 0.811 W m−1 K−1 by incorporation of 7 wt% h-BN. In addition, the fibrous composite film exhibited high thermal stability (T5 % = 498 °C and Tg = 182 °C) and mechanical strength (Tensile strength = 39.2 MPa and tensile modulus = 250.9 MPa). Therefore, this work opens up an alternative method to prepare high-performance polymer composite film with low dielectric constant and high thermal conductivity, which suggests the broad application in the future flexible electronics.

Highly stable silver nanowire networks with tin oxide shells for freestanding transparent conductive nanomembranes through all‐solution processes

Freestanding nanomembranes (NMs) with nanoscale thickness, are mechanically flexible, which are novel building blocks with potential applications in future wearable conformal electronics. Here, we demonstrate a highly stable, ultrathin, freestanding, transparent, and conductive hybrid NM, consisting of a silver nanowire network with tin oxide shell embedded in a colorless polyimide (cPI). The entire fabrication processes are all solution based and non-vacuum, which are simple, scalable and low-cost, enabling facile large-area integration with wearable electronic devices. Our hybrid NMs possess high optical transmittance of 86.7% with low sheet resistance of 9.6 Ω/sq. and can be conformal attached to human skin. In addition, our hybrid NMs exhibit excellent stability to resist moisture, long-term storage, solvent damage, strong oxidant, ultrasonication and acid/base should stem. Particularly, the hybrid NMs are robust and able to withstand high temperature of 300 ℃, without deterioration of performance. As a conformal/skin-attachable device application, a skin-attachable capacitive NM sensor is presented, which provides excellent pressure sensing capabilities.

Electric-field-induced metal-insulator transition and quantum transport in large-area polycrystalline MoS2 monolayers

Monolayer ${\mathrm{MoS}}_{2}$ is an attractive candidate for developing future electronics and exploring fundamental physics because of its unique quantum properties. High-performance ${\mathrm{MoS}}_{2}$ transistors with superior transport originating from spin-valley coupling have been reported. However, these transistors have used single-crystalline flakes. In most large-area polycrystalline ${\mathrm{MoS}}_{2}$, these excellent transport properties have not been realized because of the effects of grain boundaries, and their fundamental low-temperature transport has not been studied in detail. Here, we apply electrolyte-gating methods using chemically grown centimeter-scale polycrystalline monolayers. Owing to the high carrier density, the resistance is systematically tuned from insulating to metallic conduction. Importantly, we observed metallic transport at temperatures down to 1.9 K and a high mobility of $>100\phantom{\rule{0.16em}{0ex}}\mathrm{c}{\mathrm{m}}^{2}\mathrm{n}{\mathrm{V}}^{\ensuremath{-}1}\phantom{\rule{0.16em}{0ex}}{\mathrm{s}}^{\ensuremath{-}1}$. Moreover, the magnetotransport exhibits an electric-field-induced crossover from weak localization to weak antilocalization, indicating that high carrier density dramatically suppresses the grain boundary effects to enable intrinsic quantum transport. The results reveal that polycrystalline ${\mathrm{MoS}}_{2}$ monolayers have significant potential for use in large-area nanoelectronics.

60‐1: Distinguished Paper: An Electrophoretic E‐Paper Device with Stretchable, Washable, and Rewritable Functions

A self‐cracking structure is introduced to construct a stretchable electrophoretic e‐paper display device. Instead of the conventional sandwich structure, the proposed device directly forms electrodes upon the display layer without laminating an extra layer. This structure avoids layer‐to‐layer mismatch under the long‐term loading cycles and exhibits high stretchability and robustness. A prototype is demonstrated to simultaneously have stretchable, washable, and re‐writable features, which provides a new paradigm for future wearable electronics.

Graphene synthesis, fabrication, characterization based on bottom-up and top-down approaches: An overview

This study presents an overview on graphene synthesis, fabrication and different characterization techniques utilized in the production. Since its discovery in 2004 by Andre Geim and Kostya Novoselov several research articles have been published globally to this effect, owing to graphene’s extraordinary, and exclusive characteristics which include optical transparency, excellent thermal, and mechanical properties. The properties and applications of this two-dimensional carbon crystal composed of single-layered material have created new avenues for the development of high-performance future electronics and technologies in energy storage and conversion for the sustainable energy. However, despite its potential and current status globally the difficulty in the production of monolayer graphene sheet still persists. Therefore, this review highlighted two approaches in the synthesis of graphene, which are the top-down and bottom-up approaches and examined the advantages and failings of the methods involved. In addition, the prospects and failings of these methods are investigated, as they are essential in optimizing the production method of graphene vital for expanding the yield, and producing high-quality graphene.

I-jettiness with jet axis at O(αs) in deep inelastic scattering

We present O(αs) analytic predictions for event shape 1-jettiness τ1 distribution aiming measurements in deep inelastic scattering process at future Electron Ion Colliders. The result depends on conventional variables x and Q as well as on τ1 and is relatively compact and easy to implement for numerical calculation. Three different choices of axis, with respect to which τ1 is measured are considered in the Breit frame. The first is the one optimally adjusted to minimize τ1 and the second and third are taken from anti-kT and Centauro jet algorithms defined with a jet radius parameter R, respectively. We find that the first and second give the same result at this order and are independent of R, while the third depends on the radius. This fixed-order result provides a nonsingular contribution to be combined with a singular log-resummed contribution to give the full spectrum in τ1 space and also shows how fixed-order and resummation regions change as a function of x and Q.

Photocatalysis‐Induced Nanopores toward Highly Reliable Organic Electrochemical Metallization Memory

AbstractOrganic electrochemical metallization (ECM) memory that possesses high reliable switching performance is in great demand for the future smart wearable and flexible electronics. The resistive switching (RS) behavior of organic ECM memory is determined by the micro‐morphology evolution of metal conductive filaments (CFs) during the operating process. However, the morphology controllability of CFs is generally deteriorated by their random distribution and unexpected overgrowth. Herein, a kind of nanoporous PVC/TiO2 nanocomposite is developed using photocatalytic method for improving the RS reliability of organic ECM memory. The introduction of engineered nanopores can effectively simplify the CFs morphology to obtain excellent uniformity, good retention, and low cycling degradation. In addition, taking advantage of the multilevel RS behavior and 200 × 200 memristive array artificial neural network (ANN), alphabetic data storage and image pattern recognition are successfully realized. The proposed approach is expected to provide novel platforms for the advance of highly reliable flexible electronics and ANN for intelligence applications.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures.

Emerging twistronics based on van der Waals (vdWs) materials has attracted great interest in condensed matter physics. Recently, more neoteric three-dimensional (3D) architectures with interlayer twist are realized in germanium sulfide (GeS) crystals. Here, we further demonstrate a convenient way for tailoring the twist rate of helical GeS crystals via tuning of the growth temperature. Under higher growth temperatures, the twist angles between successive nanoplates of the GeS mesowires (MWs) are statistically smaller, which can be understood by the dynamics of the catalyst during the growth. Moreover, we fabricate self-assembled helical heterostructures by introducing germanium selenide (GeSe) onto helical GeS crystals via edge epitaxy. Besides the helical architecture, the moiré superlattices at the twisted interfaces are also inherited. Compared with GeS MWs, helical GeSe/GeS heterostructures exhibit improved electrical conductivity and photoresponse. These results manifest new opportunities in future electronics and optoelectronics by harnessing 3D twistronics based on vdWs materials.

Low-Temperature Synthesis of Boron Nitride as a Large-Scale Passivation and Protection Layer for Two-Dimensional Materials and High-Performance Devices.

Two-dimensional materials (2DMs) with extraordinary electronic and optical properties have attracted great interest in optoelectronic applications. Due to their atomically thin feature, 2DM-based devices are generally sensitive to oxygen and moisture in ambient air, and thus, practical application of durable 2DM-based devices remains challenging. Here, we report a novel strategy to directly synthesize amorphous BN film on various 2DMs and field-effect transistor (FET) devices at low temperatures by conventional chemical vapor deposition. The wafer-scale BN film with controllable thickness serves as a passivation and heat dissipation layer, further improving the long-term stability, the resistance to laser irradiation, and the antioxidation performance of the underneath 2DMs. In particular, the BN capping layer could be deposited directly on a WSe2 FET at low temperature to achieve a clean and conformal interface. The high performance of the BN-capped WSe2 device is realized with suppressed current fluctuations and 10-fold enhanced carrier mobility. The transfer-free amorphous BN synthesis technique is simple and applicable to various 2DMs grown on arbitrary substrates, which shows great potential for applications in future two-dimensional electronics.

On‐Surface Synthesis of a Nitrogen‐Doped Graphene Nanoribbon with Multiple Substitutional Sites

AbstractDoped graphene nanoribbons (GNRs) with heteroatoms are a principal strategy to fine‐tune the electronic structures of GNRs for future device applications. Here, we successfully synthesized the N=9 nitrogen‐doped armchair GNR on the Au(111) surface. Due to the flexibility of precursor molecules, three different covalent bonds (C−C, C−N, N−N) are formed in the GNR backbone. Scanning tunneling spectroscopy analysis together with band structure calculations reveals that the band gap of the N‐9‐AGNRs (C−C) will be enlarged compared to pristine 9‐AGNRs, and the C−N bond and N−N bond at the isolated site of N‐9‐AGNR (C−C) will introduce new defect states near the Fermi level. DFT calculations reveal that the electronic structure of N‐9‐AGNR (C−C) shows semiconductor character, while N‐9‐AGNR (C−N) and N‐9‐AGNR (N−N) display metallic character. Our results provide a promising route for creating more complex molecular heterostructures with tunable band gaps, which may be useful for future molecular electronics and memory device applications.

TEMPO-Oxidized Nanofibrillated Cellulose Assisted Exfoliation of MoS2 /Graphene Composites for Flexible Paper-Anodes.

TEMPO-oxidized nanofibrillated cellulose (ONFC) with charged carboxyl groups is introduced for the efficient exfoliation of two-dimensional (2D) MoS2 /graphene composites. As an effective dispersant agent, ONFC can be easily absorbed between the adjacent layers, so as to prevent the accumulation of the exfoliated nanosheets. With the assistance of charged ONFC, the exfoliated MoS2 /graphene is gradually increased in the aqueous dispersions with the elongated sonication time. After dewatering, self-standing MoS2 /Graphene/ONFC/CNTs composite films are rationally constructed using ONFC as flexible fibrous skeleton, and CNTs/graphene as 1D/2D interpenetrating electrical networks. Ultrathin MoS2 nanosheets anchored on the 1D/2D heterogeneous networks is directly acted as an ideal paper-anode for lithium-ion batteries (LIBs) without using traditional metallic current collector. The self-standing flexible electrode materials based on natural cellulose will promote the future green electronics with high flexibility, miniaturization, and increased portability.

High‐Performance Compressible Zinc Ion Battery Based on Melamine Foam‐Derived Electrodes

Zinc ion batteries (ZIBs) with high capacity and superior safeness represent a promising candidate as the power source for portable electronics. However, it remains a big challenge to construct high‐performance ZIBs with highly compressible capability, due to the limited compressible properties of electrodes and electrolyte. Herein, a highly compressible ZIB using a cathode of polyaniline/carbon foam (PANI/CF), an anode of Zn/CF, and a gel electrolyte containing polyvinyl alcohol and Zn(CF3SO3)2 is demonstrated. The 3D interconnection structure of the self‐supporting CF material not only can provide compressible platform to load active materials, but also can facilitate transport of ions. As desired, the newly developed ZIB exhibits high specific capacity of 215 mAh g−1 at a current density of 1 A g−1 and excellent cyclic stability (88% after 2500 charge/discharge cycles). Benefiting from the excellent mechanical compressibility and stability of CFs, the ZIBs well maintain their original electrochemical performance under a compressive strain as high as 75% and even pressing/releasing for 1000 cycles under a strain of 60%, indicating outstanding compressible capability. The compressible ZIB represents a promising candidate to be used as power supplies for portable electronics in the near future.

On-Surface Synthesis of a Nitrogen-Doped Graphene Nanoribbon with Multiple Substitutional Sites.

Doped graphene nanoribbons (GNRs) with heteroatoms are a principal strategy to fine-tune the electronic structures of GNRs for future device applications. Here, we successfully synthesized the N=9 nitrogen-doped armchair GNR on the Au(111) surface. Due to the flexibility of precursor molecules, three different covalent bonds (C-C, C-N, N-N) are formed in the GNR backbone. Scanning tunneling spectroscopy analysis together with band structure calculations reveals that the band gap of the N-9-AGNRs (C-C) will be enlarged compared to pristine 9-AGNRs, and the C-N bond and N-N bond at the isolated site of N-9-AGNR (C-C) will introduce new defect states near the Fermi level. DFT calculations reveal that the electronic structure of N-9-AGNR (C-C) shows semiconductor character, while N-9-AGNR (C-N) and N-9-AGNR (N-N) display metallic character. Our results provide a promising route for creating more complex molecular heterostructures with tunable band gaps, which may be useful for future molecular electronics and memory device applications.

Extrusion‐Based 3D‐Printed Supercapacitors: Recent Progress and Challenges

Supercapacitors have been regarded as promising power supplies for future electronics due to their high power density, superior stability, easy integration, and safety. Extrusion‐based three‐dimensional printing technologies hold promise to satisfy the demands for integrated and flexible supercapacitors because of their highly versatile manufacturing process. In this review article, a comprehensive and timely review of these state‐of‐the‐art technologies is presented. We start with a brief introduction of fundamental concepts of supercapacitors, including energy storage mechanisms and device structures. Then, the latest progress of extrusion‐based three‐dimensional printing technologies (e.g., fused deposition modeling, inkjet printing, and direct ink writing) along with their applications for manufacturing supercapacitors is summarized. The choice of printable materials (e.g., graphene, carbon nanotubes, metal oxides, and MXenes), printing process, and the resulted electrochemical performances of supercapacitors are especially emphasized. Finally, the development of extrusion‐based three‐dimensional printing supercapacitors is summarized, with existing challenges diagnosed, possible solutions proposed, and future outlooks forecasted. We hope this review can offer insights to further improve the performance of three‐dimensional‐printed supercapacitors for practical applications.

Component wise contribution to total thermal resistance in 2D material based device stacks

Vertically stacked devices is a promising direction in future electronics. However, a major thermal bottleneck to such vertical integration is dissipated heat generation within the stack. It is shown that the interface between two-dimensional (2D) materials and substrates is a limiting factor, for heat flow, in constituting electrical devices. Through considering the example of a graphene-based platform, the thermal boundary conductance (TBC) along with the converse thermal resistance (RK) was estimated through a diffuse mismatch model considering the related phonon dispersion. It was shown, for instance, that the graphene-SiO2 interface contributes to more than 50% of the RK in a graphene-SiO2-Si assembly. Weak van der Waals interactions at the interface coupled with phonon frequency mismatch are attributed as the reasons for the reduced TBC, allowing less heat to flow across the interface. This study provides a guideline on effect of materials and layouts on thermal efficiencies of 2D material based device stack.

Nanowires in Flexible Sensors: Structure is Becoming a Key in Controlling the Sensing Performance

AbstractFlexible sensors, as a kind of indispensable branch of flexible electronics, are garnering substantial in medical and industrial applications. Ever‐evolving advances in nanowires in their myriad forms have fueled many of the developments in this field. However, recent researches have extensively focused on the intrinsic properties of these nanomaterials, rationally designed structures, which are pivotal in sensing performance, to a large extent, are undervalued. Hereon, the latest advances in the structure design, together with controlled fabrication of nanowires for better sensing performance are highlighted. In specific, nanowires are classified according to morphologies and hybrid forms and their corresponding fabrication methodologies and influence on sensing properties are briefly discussed. Then, construction strategies for nanowire‐based sensors, including materials assembly and macroscopical design are systematically summarized. Subsequently, the characteristics and advantages of flexible sensors induced by various nanowires, including physical/physiological/multifunctional parameters sensing are reflected in the application examples. Finally, conclusions and challenges are presented for the development of nanowire‐based flexible sensors, as well as frontier strategies especially bionic design. This review is aimed at providing a valuable and systematic understanding of nanowires in sensing system and then serves as inspiration for intelligent designs in flexible future electronics.

Light-field control of real and virtual charge carriers.

Light-driven electronic excitation is a cornerstone for energy and information transfer. In the interaction of intense and ultrafast light fields with solids, electrons may be excited irreversibly, or transiently during illumination only. As the transient electron population cannot be observed after the light pulse is gone, it is referred to as virtual, whereas the population that remains excited is called real1-4. Virtual charge carriers have recently been associated with high-harmonic generation and transient absorption5-8, but photocurrent generation may stem from real as well as virtual charge carriers9-14. However, a link between the generation of thecarrier types and their importance for observables of technological relevance is missing. Here we show that real and virtual charge carriers can be excited and disentangled in the optical generation of currents in a gold-graphene-gold heterostructure using few-cycle laser pulses. Depending on the waveform used for photoexcitation, real carriers receive net momentum and propagate to the gold electrodes, whereas virtual carriers generate a polarization response read out at the gold-graphene interfaces. On the basis of these insights, we further demonstrate a proof of concept of a logic gate for future lightwave electronics. Our results offer a direct means to monitor and excite real and virtual charge carriers. Individual control over each type of carrier will markedly increase the integrated-circuit design space and bring petahertz signal processing closer to reality15,16.