Electrically induced space separation of free carriers from different valleys in bulk multivalley semiconductors in restricted geometry was first reported by E. I. Rashba in 1965. This Rashba valley-dependent size effect envisioned the use of a valley index in future electronics. It remains relevant at present for the rapidly developing field of valleytronics. The authors show that electrically induced valley-polarized domains can arise in two-dimensional multivalley semiconductor nanosystems with anisotropic valleys ($n$-Si, $n$-AlAs, etc.). The formation of such domains leads to space separation of carriers from different valleys, generates valley currents, and induces electric (magnetic) fields.
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