Terahertz (THz, in the far IR region) imaging and spectroscopy offers the ability to discover chemical composition noninvasively. Applications include medical imaging, security screening, and pharmaceutical quality control. Semiconductors can produce pulsed THz radiation when their surface is illuminated by a sub-picosecond laser pulse, rather than continuous wave sources, such as a quantum cascade laser. Yet despite several technical advances, the output power is low. Thus the development of higher power semiconductor THz emitters is of considerable practical significance.1 THz generation occurs when a semiconductor is illuminated by an ultrafast laser pulse with photon energy greater than the semiconductor bandgap. A large number of electron and hole pairs are created and accelerated in opposite directions by the electric field. The resulting charge separation forms a dipole that emits a coherent THz pulse. THz radiation generated within a material of high refractive index n has an extraction problem: at the semiconductor surface, all rays outside an ‘emission cone’ of half-angle α = sin−1 1 n to the surface normal (shown as a grey cone in Figure 1) suffer total internal reflection and do not escape from the device. The fraction of power extracted depends on the orientation of the dipole axis relative to the surface. Several methods exist to increase the extraction efficiency, such as applying an external magnetic field,2 using a coupling prism,3 or fabrication of low-dimensional nanostructures.4 For example, under a magnetic field the Lorentz force—the force on a point charge due to electromagnetic fields—can rotate the orientation of the dipole to coincide with the emission cone as shown in Figure 1(a). For the extreme case of a dipole parallel to the surface, the emitted power would increase by more than a factor of 20. But these methods require cumbersome equipment, such as a strong magnet, or special sample growth techniques. We simply changed the growth orientation of the Figure 1. (a) By applying an external magnetic field (B), the THz dipole can be rotated and the radiation pattern can be overlapped with the emission cone to enhance the free-space radiation. (b) The wurtzite (hexagonal crystal) structure of indium nitride (InN). The InN film is grown along the a-axis and the in-plane electric field is formed on the a-plane.