Frank Dislocation Loops Research Articles

Electrochemical Properties of Germanium

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

The Current-Conducting Properties of Slags in Electric Furnaces

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

The Development and Application of Synthetic Liquid Dielectrics

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

The Rate of Displacement of Copper from Solutions of Its Sulfate by Cadmium and Zinc

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

Studies on Overvoltage

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

The Electrochemical Oxidation of Naphthalene Using a New Type Electrode

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.

The Electrodeposition of Lead-Thallium Alloys

We investigated the thermal behavior of dislocation loops formed in a CH3O-multielement-molecular-ion-implanted epitaxial silicon (Si) wafer by real-time cross-sectional tunneling electron microscopy observation with in situ heating. We found that the CH3O-ion-implantation-induced faulted Frank dislocation loops (FDLs) shrink at a low rate at the beginning of heat treatment (1st stage), and then the shrinkage rate rapidly increased (2nd stage), resulting in the dissolution of the defects. The activation energies for the shrinkage of FDLs in the 1st and 2nd stages were found to be 2.94±0.31 and 4.95±0.25 eV, respectively. The shrinkage behavior in the 1st stage is the desorption of C and O atoms that segregated along the edge of an FDL because of the interaction between the CH3O-ion-implantation-induced FDL and the segregated impurities. On the other hand, the 2nd stage corresponds to the desorption of Si atoms from FDLs and its migration. Our experimental results suggest that thermal stability of the dislocation loop is determined by the kind of segregated impurities around the dislocation loop.