Undoped ZnO and Sn- and Cu-doped ZnO thin films were fabricated on ITO substrates via the SILAR method for this study. The films were then subjected to structural, surface, optical, and electrical characterization. The undoped ZnO thin films displayed a spherical surface morphology, while the Sn-doped ZnO thin films exhibited a nano-flower surface morphology. On the other hand, the Cu-doped ZnO thin films demonstrated a relatively thicker and flat layer, as well as a fractured surface morphology that resulted in voids. The level of crystallization and transmittance values augmented upon doping. With Cu doping, n-p heterojunction structure was obtained from ZnO/ITO films. Hence, it is inferred that the generated Cu doped ZnO/ITO films can serve as alternative transparent conductive films (TCO) due to their low resistivity.