The process of photoreaction of stain films on p-type silicon samples was studied by means of infrared spectroscopy. The stain films were produced by immersion of silicon samples in 0.1 N solution of nitric acid in concentrated hydrofluoric acid. The films contained silicon hydride, silicon fluoride and free silicon atoms at the staining time. During the process of the photoreaction at room temperature, silicon fluoride made hydrogen bond and free silicon atoms turned into silicon oxide. Finally the stain films became silicon oxide, including hydrogen bond Si-O…HO-Si.
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