Flicker Noise Research Articles

An Inductor‐Less Zero‐IF Down‐Conversion Mixer With Low Flicker Noise and High Conversion Gain

ABSTRACTThis paper presents a novel active inductor (AI) to improve the performance of a down‐conversion active mixer in terms of conversion gain (CG) and flicker noise. The proposed AI exhibits negative resistance and partially flat inductance over a wide frequency band of 0.5–4.5 GHz. The effect of inserting the AI between the source of the switching quad of a Gilbert cell mixer is theoretically analyzed. The proposed inductor‐less mixer, designed to operate at a 2.4‐GHz RF input frequency and a 10‐MHz IF output frequency, employs current reuse and self‐forward body bias (SFBB) techniques. The proposed circuit is simulated in Cadence Spectre‐RF using RF‐TSMC 0.18‐μm CMOS technology. Post‐layout simulations demonstrate that the proposed AI significantly reduces flicker noise by over 23 dB at an IF output frequency of 1 kHz and improves the CG by over 16 dB at an RF frequency of 2.4 GHz. The proposed mixer achieves a CG of 37.6 dB and a flicker noise corner frequency of 6 kHz. Additionally, it exhibits a third‐order intermodulation intercept point (IIP3) of −5.2 dBm and a double‐sideband noise figure (DSB‐NF) of 6.1 dB at the IF output frequency of 10 MHz. Operating with a 1.5‐V supply, the proposed mixer consumes 10.6 mW of power.

Space weather monitoring with a system of ground-based cosmic ray detectors

For remote identification of the processes of powerful solar activity in the form of CME directed towards the Earth, a technique of flicker noise spectroscopy has been developed. The results of the analysis of geo-effective events ( G1) are presented according to the data of the international network of neutron monitors and the multidirectional muon hodoscope URAGAN, which indicate the appearance of predictors (with an outstrip of 1–2 days) of the CME approach to the Earthʼs orbit.

A Unified Charge-Based SPICE-Compatible Flicker Noise Model for 2-D Material FETs

A Unified Charge-Based SPICE-Compatible Flicker Noise Model for 2-D Material FETs

An enhanced stochastic error modeling using multi-Gauss–Markov processes for GNSS/INS integration system

Angular random walk (ARW), rate random walk (RRW), and bias instability (BI) are the main noise types in inertial measurement units (IMUs) and thus determine the navigation performance of IMUs. BI is the flicker noise, which determines the noise level of an inertial sensor. The traditional error modeling approach involves modeling the ARW and BI processes as RRW or Gauss–Markov (GM) processes, and this approach is applied as a suboptimal filter in the global navigation satellite system (GNSS)/inertial navigation system (INS) extended Kalman filter (EKF). In this paper, the random error identification processes for white noise and colored noise for inertial sensors are separated using the Allan variance and power spectral density methods and the equivalence of the stochastic process differential equations of bias instability and a combination of multiple first-order GM processes are derived. A colored noise compensation method is proposed based on the enhanced EKF model. Experimental results demonstrate that, compared to traditional error models, our proposed model reduces positional drift error in dynamic testing from 195 to 49 m, enhancing positional accuracy by 40.2%. These findings confirm the potential and superiority of our method in complex navigation environments.

Low Frequency Electronic Noise Characterization of Au-W/β-Ga2O3 Schottky Diodes

Ultra-wide bandgap (UWBG) semiconductors have attracted tremendous amount of interest for applications in high-power electronics and solar-blind UV photodetectors. In particular, β-Ga2O3 has attracted significant research attention in recent years due to its promising electrical and optical characteristics including a large bandgap, high breakdown electrical field, and large Baliga’s figure of merit compared to well-established wide-bandgap technologies such as GaN and SiC [1].Low frequency electronic noise, which is present in all electronic devices, can be used as a diagnostic tool for semiconductor material and device characterization. By studying the low frequency noise in semiconductor materials and devices, the physics associated with the noise properties of bulk and interface defects and traps can be investigated [2]. Measurement of low frequency noise is also crucial for evaluating material quality and device reliability.In this work, we investigate the forward-bias diode parameters and low-frequency electronic noise in Au-W/β-Ga2O3 Schottky barrier diodes. The Schottky contact is formed by depositing 20 nm of Tungsten (W) using dc sputtering followed by 340 nm of Gold (Au) using e-beam evaporation, and subsequent annealing [3].We first measure the I-V characteristics and extract important diode parameters, such as the Schottky barrier height, ideality factor, and series resistance from room temperature forward-bias current-voltage characteristics. The extracted Schottky barrier height for these devices is in the range 0.7-0.8 eV and the ideality factor is approximately 1.2.We next measure the low-frequency electronic noise in Au-W/β-Ga2O3 Schottky diodes at different forward bias voltages at room temperature. We find that the current noise spectral density exhibits 1/f-type behavior for all forward bias voltages at low frequency with an exponent ranging from 0.75 to 1.15, indicating that the low frequency noise of these devices is dominated by excess (flicker) noise. No Lorentzian-shaped generation-recombination (G-R) noise is observed. At low frequencies, the shot noise contribution is found to be negligible for the values of the current in our devices, and the total noise is 1/f-limited.We also investigate the dependence of the current noise spectral density on forward bias current, revealing different relationships in different current regimes. At low currents, the noise spectral density is found to scale approximately as the square of current, whereas at high currents, the noise spectral density begins to saturate. Such noise behavior can be attributed to different noise sources dominating in different current regimes. Furthermore, using the noise figure of merit adapted for ultra-wide bandgap semiconductor devices [4], we find that the Au-W/β-Ga2O3 devices have lower noise levels compared to other emerging UWBG materials and similar noise levels as well-established technologies such as GaN.These results provide important insights into the electronic noise properties of Au-W/β-Ga2O3 Schottky diodes and show that low frequency noise characterization is an important diagnostic tool for assessing the quality and reliability of gallium oxide based wide-bandgap materials and device technologies.

Excess noise and thermoelectric effect in magnetron-sputtered VO2 thin films

This work presents the excess noise and thermoelectric (Seebeck) measurements on polycrystalline vanadium dioxide (VO2) thin films. Noise spectral power density (SPD) of current fluctuations in the semiconducting (SC) phase had a typical flicker noise (f−γ) characteristic with an average slope parameter γ of 1.13. Normalized SPD (Sn) values obtained in the SC-phase indicate that the noise originates in the bulk of the film. On the contrary, in the metallic (M)-phase, γ values were greater than unity, and the observed Sn values indicated that the origin of the noise is most likely from the contacts or surface rather than the bulk. A general decrease was observed in Sn by a factor of 4–5 from the SC- to M-phase. Moreover, Sn in the SC-phase showed no temperature dependence. An interpretation based on the number of charge carrier fluctuations in Hooge's model led to an unrealistically high Hooge parameter and had to be ruled out. We propose that the fluctuations are related to the mobility fluctuations of carriers arising primarily from grain-boundary scattering which explains the observed characteristics well. The Seebeck coefficients (S) obtained under both heating and cooling schedules showed the n-type nature of magnetron-sputtered VO2 films in the SC-phase. Differently, in the M-phase, the S value was positive. The S values obtained from the cooling schedule signified the low percolation threshold of the metal-to-insulator transition already demonstrated for VO2 thin films grown on r-cut sapphire using the Efros–Shklovskii percolation model.

Sensitivity of GNSS to vertical land motion over Europe: effects of geophysical loadings and common-mode errors

We perform a statistical sensitivity analysis on a parametric fit to vertical daily displacement time series of 244 European Permanent GNSS stations, with a focus on linear vertical land motion (VLM), i.e., station velocity. We compare two independent corrections to the raw (uncorrected) observed displacements. The first correction is physical and accounts for non-tidal atmospheric, non-tidal oceanic and hydrological loading displacements, while the second approach is an empirical correction for the common-mode errors. For the uncorrected case, we show that combining power-law and white noise stochastic models with autoregressive models yields adequate noise approximations. With this as a realistic baseline, we report improvement rates of about 14% to 24% in station velocity sensitivity, after corrections are applied. We analyze the choice of the stochastic models in detail and outline potential discrepancies between the GNSS-observed displacements and those predicted by the loading models. Furthermore, we apply restricted maximum likelihood estimation (RMLE), to remove low-frequency noise biases, which yields more reliable velocity uncertainty estimates. RMLE reveals that for a number of stations noise is best modeled by a combination of random walk, flicker noise, and white noise. The sensitivity analysis yields minimum detectable VLM parameters (linear velocities, seasonal periodic motions, and offsets), which are of interest for geophysical applications of GNSS, such as tectonic or hydrological studies.

Explanation of flicker noise with the Bak-Tang-Wiesenfeld model of self-organized criticality.

With the original Bak-Tang-Wisenefeld (BTW) sandpile we uncover the 1/φ noise in the mechanism maintaining self-organized criticality (SOC)-the question raised together with the concept of SOC. The BTW sandpile and the phenomenon of SOC in general are built on the slow time scale at which the system is loaded and the fast time scale at which the stress is transported outward from overloaded locations. Exploring the dynamics of stress in the slow time in the BTW sandpile, we posit that it follows cycles of gradual stress accumulation that end up with an abrupt stress release and the drop of the system to subcritical state. As the system size grows, the intracycle dynamics exhibits the 1/φ-like spectrum that extends boundlessly and corresponds to the stress release within the critical state.

Noise behavior in GaAs0.2Sb0.8/GaSb heterojunction Source-All-Around vertical Tunnel FET: A comprehensive study

This article offers a comprehensive noise analysis of a GaAs0.2Sb0.8/GaSb heterojunction Source-All-Around Vertical Tunnel FET (SAA-VTFET), examining generation-recombination (GRN), flicker (FN), and diffusion (DN) noise. It pioneers an investigation into noise behavior under the influence of interface traps, temperature variations, and frequencies. Analysis includes both output current noise power spectral density (Sid) and input voltage noise power spectral density (Svg). Furthermore, the sensitivity of noise PSD is noted to be maximum at lower Vgs (gate bias voltage), suggesting that trap-assisted tunneling (TAT) and Shockley-Read-Hall (SRH) recombination dominate over band-to-band tunneling in this region. For enhanced clarity, this study also includes an analysis of the impact of traps and temperature on both AC and DC characteristics.

A 382nVrms 100GΩ@50Hz Active Electrode for Dry-Electrode EEG Recording.

This article describes a low noise and ultra-high input impedance active electrode (AE) interface chip for dry-electrode EEG recording. To compensate the input parasitic capacitance and the ESD leakage, power/ground/ESD bootstrapping is proposed. This design integrates chopping stabilization technique to suppress flicker noise of the amplifier which has never been tackled in previous bootstrapped AE design. Both on-chip and off-chip input routing is active shielded to minimize wire parasitic. Fabricated in a 0.18μm CMOS process, the AE core occupies about 0.056mm2 and draws 17.95μA from a 1.8V supply. The proposed AE achieves 100GΩ input impedance at 50Hz and over 1GΩ at 1kHz with a low input-referred noise of 382nVrms integrated from 0.5Hz to 70Hz. This design is the first 100GΩ@50Hz input impedance chopper stabilized AE compared to the state-of-the-art. Dry-electrode EEG recording capability of the proposed AE are verified on three types of experiments including spontaneous α-wave, event related potential and steady-state visual evoked potential.

Design dependence of noise in Nb-based dc SQUIDs

Noise in superconducting quantum interference devices (dc SQUIDs) with different design, based on Nb/AlOx/Nb technology, has been systematically measured at temperature T = 4.2 K. We demonstrate that for all our devices the power spectral density of the white noise (above a frequency of about 1 kHz) is determined by the shunt resistors, reaching about 5 times Planck’s constant. The low-frequency noise level was measured for washer- and multi-loop-type SQUIDs with systematically varied effective area, SQUID loop perimeter, and inductance. We show that at 1 Hz the noise spectral density is approximately 40 times higher than the white noise level and its scaling with washer width and effective area is negligible. These results are incompatible with several models of the flicker noise source. Possible origins of this noise are discussed.

HR 10 as seen by CHEOPS and TESS. Revealing delta Scuti pulsations, granulation-like signal and hint for transients

HR 10 has only recently been identified as a binary system. Previously thought to be an A-type shell star, it appears that both components are fast-rotating A-type stars, each presenting a circumstellar envelope. Although showing complex photometric variability, spectroscopic observations of the metallic absorption lines reveal variation explained by the binarity, but not indicative of debris-disc inhomogeneities or sublimating exocomets. On the other hand, the properties of the two stars make them potential delta Scuti pulsators. The system has been observed in two sectors by the TESS satellite, and was the target of three observing visits by CHEOPS. Thanks to these new data, we aim to further characterise the stellar properties of the two components. In particular, we aim to decipher the extent to to which the photometric variability can be attributed to a stellar origin. In complement, we searched in the lightcurves for transient-type events that could reveal debris discs or exocomets. We analysed the photometric variability of both the TESS and CHEOPS datasets in detail. We first performed a frequency analysis to identify and list all the periodic signals that may be related to stellar oscillations or surface variability. The signals identified as resulting from the stellar variability were then removed from the lightcurves inorder to search for transient events in the residuals. We report the detection of delta Scuti pulsations in both the TESS and CHEOPS data, but we cannot definitively identify which of the components is the pulsating star. In both datasets, we find flicker noise with the characteristics of a stellar granulation signal. However, it remains difficult to firmly attribute it to actual stellar granulation from convection, given the very thin surface convective zones predicted for both stars. Finally, we report probable detection of transient events in the CHEOPS data, without clear evidence of their origin.

Minimizing Contact Resistance and Flicker Noise in Micro Graphene Hall Sensors Using Persistent Carbene Modified Gold Electrodes.

Scalable micro graphene Hall sensors (μGHSs) hold tremendous potential for highly sensitive and label-free biomagnetic sensing in physiological solutions. To enhance the performance of these devices, it is crucial to optimize frequency-dependent flicker noise to reduce the limit of detection (LOD), but it remains a great challenge due to the large contact resistance at the graphene-metal contact. Here we present a surface modification strategy employing persistent carbene on gold electrodes to reduce the contact resistivity by a factor of 25, greatly diminishing μGHS flicker noise by a factor of 1000 to 3.13 × 10-14 V2/Hz while simultaneously lowering the magnetic LOD SB1/2 to 1440 nT/Hz1/2 at 1 kHz under a 100 μA bias current. To the best of our knowledge, this represents the lowest SB1/2 reported for scalable μGHSs fabricated through wafer-scale photolithography. The reduction in contact noise is attributed to the π-π stacking interaction between the graphene and the benzene rings of persistent carbene, as well as the decrease in the work function of gold as confirmed by Kelvin Probe Force Microscopy. By incorporating a microcoil into the μGHS, we have demonstrated the real-time detection of superparamagnetic nanoparticles (SNPs), achieving a remarkable LOD of ∼528 μg/L. This advancement holds great potential for the label-free detection of magnetic biomarkers, e.g., ferritin, for the early diagnosis of diseases associated with iron overload, such as hereditary hemochromatosis (HHC).

Synthesis, characterization, and electronic transport properties of o-carborane-bridged thiophene derivatives

Here, α- or β-thiophene-substituted derivatives bridged by an o-carborane group were synthesized. Scanning tunneling microscope break junction techniques have revealed that the thiophene anchoring groups form a single-molecule junction with an Au electrode. Flicker noise analysis suggests the existence of through-space transmission pathways between the thiophene units. Furthermore, the electronic coupling of the β-thiophene substituted molecule with the electrode is found to be more stable, resulting in a 70 % increase in conductance compared to the α-isomer counterpart.These findings offer valuable insights for the design and development of o-carborane-based molecules, underscoring the significance of molecular backbones and substitution patterns on their electrical transport properties.

87‐2: Modeling and Simulation for Mitigating Display Noise Caused by PMIC Ripple

The output ripple of the Power Management IC (PMIC) is one of the causes of display panel noise. This paper introduces modeling and simulation methods aimed at predicting and mitigating noise induced by PMIC ripple. If the display panel simulation is performed using an ideal voltage source, the ripple characteristics of the PMIC cannot be included. The improved method accurately predicted the ripple of the voltage input to the panel by modeling flicker noise and thermal noise, which are the main causes of PMIC noise, and modeling the Z‐parameter and decoupling capacitor of the PCB. In addition, it was possible to minimize ripples and finally reduce display noise by optimizing the design of the power supply circuit.

Colored noise in GRACE total water storage time series: Its impact on trend significance in the Türkiye region and major world river basins

Temporal correlations are prevalent in most geophysical time series data, leading to what is known as colored noise, which become more apparent in the frequency domain rather than time domain. Neglecting this type of noise in modeling can result in underestimated standard errors for the parameters of the model used to analyze the time series. As a result, statistical tests misinterpret the significance of these parameters, such as the overall trend rate, because the “signal to noise” ratio becomes incorrectly larger than it should be. In this study, we investigate the temporal correlations in the time series data from the Gravity Recovery and Climate Experiment (GRACE) mission. GRACE and its successor mission GRACE Follow-On (GRACE-FO) have been successfully employed to monitor global total water storage anomalies over two decades since its initial launch in 2002. We primarily utilize monthly GRACE mascon (mass concentration) solutions provided by NASA Goddard Space Flight Center (GSFC), examining both regional and global scales. The power spectrum density of the residuals, calculated after applying standard harmonic regression to each mascon time series on Earth’s land, reveals an average spectral index of κ = −1. This indicates the predominance of flicker noise, one of the most common forms of colored noise in geodetic time series. Notably, the noise becomes more Brownian (κ < −1) in regions with intense hydrological events, while it tends to be more white noise (κ → 0) in areas with less water circulation compared to other land regions. This observation suggests that unmodelled hydrological events, such as droughts, floods, and ones associated with ice-melting, contribute to the residuals as colored noise in the time series. To account for this noise in our time series modeling, we primarily consider autoregressive (AR) moving average (MA) process, commonly known as ARMA, in addition to the standard variance component estimation for noise amplitudes. We focus on individual mascon blocks in the Türkiye Region and mascon solutions for 24 world’s major river basins. Our findings demonstrate that an ARMA(1,1) model is sufficient for describing the noise in these regions. The results underscore the importance of considering colored noise, as it leads to approximately three times larger standard errors for the overall trend rate. This substantially impacts the significance of the trend rates.

Linearization of wavelength sweeping lasers for the construction of 4-D FMCW LiDAR images of slow-moving objects using baseband beat note signals

A FMCW LiDAR system of both the distributed feedback laser and external cavity laser is established in baseband beat notes, rather than up-conversion to an intermediate frequency to exclude flicker noise. Meanwhile, utilizing fast-scanning MEMS mirrors, high-quality real-time (1 fps) 4-D images of the slow-moving object (10 mm/s) can be directly constructed at the baseband with a central frequency as low as 100 kHz and a small Doppler shift. The proposed LiDAR architecture based on such a low-frequency baseband significantly improves the optical power budget on the transmitter side and eliminates the costly high-speed sampling circuits on the receiver side.

СИГНАЛЬНА МАКРОМОДЕЛЬ ОПТОПАРИ НА СТРУКТУРАХ ОРГАНІЧНОЇ ЕЛЕКТРОНІКИ

The paper is devoted to the basic approaches to the realization of the macromodel of optocouplers on organic structures for sensor devices. It is shown that the use of such structures is largely limited due to the time drift of parameters and temperature instability. In the course of the research, the possibility of compensating for these parameters directly during the operation of organic optocouples by measuring and analyzing the parameter drift was established. For this purpose, specialized built-in in-situ diagnostic systems and controlled signal transducers are used. In order to verify the functioning and optimize the parameters of signal transducers of built-in in- situ diagnostic systems, the paper describes the main approaches and the result of the implementation of the optocouple macromodel. The macromodel provides the ability to specify the components of sensor electronics optocouplers in accordance with the approaches and syntax of SPICE modeling and reflects parametric modulation with changes in ambient temperature, time instability, and flicker noise. The macromodel consists of five modules that describe the processes and specify the characteristics of the optocoupler: the light emitter (LED), self-heating of the optocoupler structure by the supply current, the optical medium or active layer of the optosensor, time drift and flicker noise, and the light receiver (photodiode or photoresistor). The modules are represented by substitution schemes of electrical components in accordance with the principle of functional analogy. The main approaches to specifying the parameters of macromodel components and examples of parametric studies based on it are considered. The use of the developed model makes it possible to obtain the values of compensation parameters for operational adjustment, in accordance with the operating conditions and properties of organic structures.

Impact of interface traps and noise analysis on dual material graded channel CGAA FET: A device reliability

This paper explores the effects of changing the device's parameters, such as the gate length (Lg), nanowire radius (r), oxide thickness (tox), and frequency (f), on the noise characteristics of dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET while considering the presence and absence of interface trap charges. The performance analysis of the DMGC CGAA FET with that of the SMGC (single material graded channel) CGAA FET, is carried out while taking into account the impact of trap charges. It's noteworthy that the DMGC FET demonstrates significant advantages, with improvement in Ion/Ioff, reduction in DIBL, and SS when compared to the SMGC CGAA FET, both in the cases of without and with traps. The investigation also extends to analyse the analog/RF performance of the DMGC FET, for different type of trap charges. Furthermore, the power spectral densities of current noise (Sid) and voltage noise (Svg) are examined by varying the device dimensions and temperature. This also addresses the various sources of noise, including flicker noise (1/f), generation-recombination (G-R) noise, and diffusion noise. These types of noise have different prevalence depending on the operating frequency. At low frequencies, flicker and G-R noises dominate, while at higher frequencies, diffusion noise becomes the prominent factor impacting the device's performance. The research findings indicate that the optimal performance of the DMGC CGAA FET is achieved with smaller nanowire radius and thinner oxide thickness, regardless of trap charges. These findings offer valuable insights for improving the design and performance of DMGC CGAA FET in low power applications.

Impact of Gate Oxide Thickness on Flicker Noise (1/f) in PDSOI n-channel FETs

This work reports the impact of gate oxide thickness on flicker noise (1/f) in 45-nm RFSOI NFET devices. In addition, the effect of finger width scaling on 1/f noise parameters is studied in linear region. The dominant source of 1/f noise is also analyzed. It is observed that thin oxide devices show carrier number fluctuation; however, for thick oxide devices, correlated number-mobility govern the noise. Extracted trap densities using 1/f noise show higher volume trap densities in thin oxide devices. Moreover, trap distribution behavior is analyzed using frequency exponent. Further, GLOBALFOUNDRIES PDK is utilized to model 1/f noise behavior of the devices.