Abstract
This article offers a comprehensive noise analysis of a GaAs0.2Sb0.8/GaSb heterojunction Source-All-Around Vertical Tunnel FET (SAA-VTFET), examining generation-recombination (GRN), flicker (FN), and diffusion (DN) noise. It pioneers an investigation into noise behavior under the influence of interface traps, temperature variations, and frequencies. Analysis includes both output current noise power spectral density (Sid) and input voltage noise power spectral density (Svg). Furthermore, the sensitivity of noise PSD is noted to be maximum at lower Vgs (gate bias voltage), suggesting that trap-assisted tunneling (TAT) and Shockley-Read-Hall (SRH) recombination dominate over band-to-band tunneling in this region. For enhanced clarity, this study also includes an analysis of the impact of traps and temperature on both AC and DC characteristics.
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