Flexible Nonvolatile Memory Research Articles

Soft Ferroelectrics Enabling High-Performance Intelligent Photo Electronics.

Soft ferroelectrics based on organic and organic-inorganic hybrid materials have gained much interest among researchers owing to their electrically programmable and remnant polarization. This allows for the development of numerous flexible, foldable, and stretchable nonvolatile memories, when combined with various crystal engineering approaches to optimize their performance. Soft ferroelectrics have been recently considered to have an important role in the emerging human-connected electronics that involve diverse photoelectronic elements, particularly those requiring precise programmable electric fields, such as tactile sensors, synaptic devices, displays, photodetectors, and solar cells for facile human-machine interaction, human safety, and sustainability. This paper provides a comprehensive review of the recent developments in soft ferroelectric materials with an emphasis on their ferroelectric switching principles and their potential application in human-connected intelligent electronics. Based on the origins of ferroelectric atomic and/or molecular switching, the soft ferroelectrics are categorized into seven subgroups. In this review, the efficiency of soft ferroelectrics with their distinct ferroelectric characteristics utilized in various human-connected electronic devices with programmable electric field is demonstrated. This review inspires further research to utilize the remarkable functionality of soft electronics.

Sustainable resistance switching performance from composite-type ReRAM device based on carbon Nanotube@Titania core\u2013shell wires

A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (VSET and VRESET were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large RON/ROFF ratio of 105 for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 105 bending test. We believe that the nanocomposite memory device with SWCNT@TiO2 core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.

Lead-free (K,Na)NbO3 Thick Films for Flexible Non-volatile Memory Applications

We report the sol-gel fabrication and electrical characterization of flexible (K,Na)NbO3 (KNN) thick films. Muscovite mica allows the growth of high-quality polycrystalline KNN thick films with flexible functionality. Because of the trade-off between increase of grain-size and volatilization of alkaline ions, the electrical polarization is optimized at certain temperature of 720 °C. The remnant and saturation polarization of flexible KNN films were recorded to Pr = 10.3 μC/cm2 and Ps = 23.3 μC/cm2, respectively, which are quite close to those of rigid films with the same chemical compositions. The KNN thick films are bendable even up to bending radius of R = 3.1 mm, and the Pr and Ps at bending states are almost the same as compared to those at unbending state. Even in the convex and concave bending, the KNN thick films show excellent non-volatile memory characteristics. The Pr is almost thesameevenafter the108 times of switching and the 104 sec of retention.

Flexible Quasi‐van der Waals Ferroelectric Hafnium‐Based Oxide for Integrated High‐Performance Nonvolatile Memory

Ferroelectric memories with ultralow‐power‐consumption are attracting a great deal of interest with the ever‐increasing demand for information storage in wearable electronics. However, sufficient scalability, semiconducting compatibility, and robust flexibility of the ferroelectric memories remain great challenges, e.g., owing to Pb‐containing materials, oxide electrode, and limited thermal stability. Here, high‐performance flexible nonvolatile memories based on ferroelectric Hf0.5Zr0.5O2 (HZO) via quasi‐van der Waals heteroepitaxy are reported. The flexible ferroelectric HZO exhibits not only high remanent polarization up to 32.6 µC cm−2 without a wake‐up effect during cycling, but also remarkably robust mechanical properties, degradation‐free retention, and endurance performance under a series of bent deformations and cycling tests. Intriguingly, using HZO as a gate, flexible ferroelectric thin‐film transistors with a low operating voltage of ±3 V, high on/off ratio of 6.5 × 105, and a small subthreshold slope of about 100 mV dec−1, which outperform reported flexible ferroelectric transistors, are demonstrated. The results make ferroelectric HZO a promising candidate for the next‐generation of wearable, low‐power, and nonvolatile memories with manufacturability and scalability.

High‐Performance Flexible Organic Nonvolatile Memories with Outstanding Stability Using Nickel Oxide Nanofloating Gate and Polymer Electret

AbstractOrganic nonvolatile memory devices based on organic field‐effect transistors (OFETs) have attracted attention as promising memory components in flexible organic integrated circuits. OFET‐based organic memories can be fabricated using solution processes with high portability and flexibility. However, many challenges still remain, such as achieving high levels of transparency and data storage while maintaining device reliability. In this study, the high‐performance of flexible organic nonvolatile memory devices is demonstrated through the synergistic effect of using a combination of polymer electret (poly(2‐vinyl naphthalene), PVN) and nanofloating gates (nickel oxide nanoparticles (NiOx NPs)). The PVN/NiOx NPs bilayer successfully acts as a charge storage medium with high transparency in the visible range. This system greatly improves memory performance including high data storage capacity, stable cyclic endurance, and quasi‐permanent retention characteristics (>10 years). Furthermore, these devices also show excellent charge storage characteristics after 1000 bending cycles and even under the sharply bent state (bending radius 3 mm). This enhanced mechanical stability of flexible synergistic memory devices demonstrates that NiOx NPs can play an important role as a reliable data storage material for next‐generation wearable electronic devices.

Conduction Response in Highly Flexible Nonvolatile Memory Devices

AbstractResistive random access memories (RRAMs) are promising candidates for future nonvolatile memories. Here, a flexible nonvolatile resistive switching (RS) device is constructed by spin coating an RS film of graphene oxide (GO) incorporating with TiO2 nanoparticles, denoted as TGO, on an indium‐doped tin oxide electrode. The TGO film is highly flexible and optically transparent (92–98%), and the device demonstrates excellent RS characteristics (centralized SET and RESET voltages and large RS ratio) at a low voltage of 0.5 V. The RS behavior is found to originate from the migration and distribution of oxygen anions in the TGO film under an electric field. The oxygen anions extracted from TiO2 nanoparticle provide good chemical linkage for the development of sp2 filaments in the GO film, promoting the RS behavior. The findings of this study may also be very useful for researchers working on controlling magnetism in RRAM devices.

High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition

The bipolar resistive switching (RS) characteristics of the ZnO-based TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN structure are investigated for flexible nonvolatile memory applications. Using a thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> buffer layer on both sides of the ZnO device shows uniform and eminently stable bipolar resistance switching characteristics. The device exhibits good RS with more than two orders of resistance ON-OFF ratio, retention of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> s at 120 °C, good dc endurance >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> cycles, and high ac endurance of >10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> cycles with 40-ns pulsewidth without any degradation. The device shows high mechanical stability when under 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> continuous repetitive flexible bendings, indicating that high endurance with a very small bending radius of up to 3 mm. The lower Gibbs free energy of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (-1676 kJ/mol) film compared with the ZnO (-320.4 kJ/mol) and TiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (-994 kJ/mol) films can improve the RS properties of the TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN device. The significant improvement in the TiN/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /ZnO/Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /TiN device is due to the reason that thin Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> layers on both sides of ZnO would help stabilize the local oxygen migrations for the formation and rupture of the conductive filament during the continuous switching cycles, resulting in high memory switching characteristics.

Simultaneous Optical Tuning of Hole and Electron Transport in Ambipolar WSe2 Interfaced with a Bicomponent Photochromic Layer: From High-Mobility Transistors to Flexible Multilevel Memories.

The interfacing of 2D materials (2DMs) with photochromic molecules provides an efficient solution to reversibly modulate their outstanding electronic properties and offers a versatile platform for the development of multifunctional field-effect transistors (FETs). Herein, optically switchable multilevel high-mobility FETs based on few-layer ambipolar WSe2 are realized by applying on its surface a suitably designed bicomponent diarylethene (DAE) blend, in which both hole and electron transport can be simultaneously modulated for over 20 cycles. The high output current modulation efficiency (97% for holes and 52% for electrons) ensures 128 distinct current levels, corresponding to a data storage capacity of 7 bit. The device is also implemented on a flexible and transparent poly(ethylene terephthalate) substrate, rendering 2DM/DAE hybrid structures promising candidates for flexible multilevel nonvolatile memories.

Nonvolatile Memory and Artificial Synapse Based on the Cu/P(VDF-TrFE)/Ni Organic Memtranstor.

We demonstrate a flexible nonvolatile multilevel memory and artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor which exhibits pronounced nonlinear magnetoelectric effects at room temperature. The states of the magnetoelectric voltage coefficient αE of the memtranstor are used to encode binary information. By applying selective electric-field pulses, the states of αE can be switched repeatedly among 2n states (n = 1, 2, 3) in a zero dc bias magnetic field. In addition, the magnetoelectric coefficient is used to act as synaptic weight, and the induced magnetoelectric voltage VME is regarded as postsynaptic potentials (excitatory or inhibitory). The artificial synaptic devices based on the Cu/P(VDF-TrFE)/Ni memtranstor display the long-term potentiation (depression) and spiking-time-dependent plasticity behaviors. The advantages of a simple structure, flexibility, multilevel, and self-biasing make the Cu/P(VDF-TrFE)/Ni organic memtranstor a promising candidate for applications in nonvolatile memory as well as artificial synaptic devices with low energy consumption.

All-room-temperature processed high flexibility resistive switching memory by ultraviolet-radioactive induction

Alumina-based materials are widely used in semiconductor industry due to the high reliability. However, they are usually employed as high-k gate dielectric rather than memory layer, and high temperature annealing process is also required to maintain the electrical characteristics. These factors enormously limit their further applications in new semiconductor devices such as new type non-volatile memory and flexible electronic devices. In this work, a one-step ultraviolet irradiation method was applied to rapidly achieve AlO–OH thin film at room temperature for flexible resistive memory. This flexible memory device shows satisfied electrical characteristics such as typical unipolar resistive switching behaviors, stable retention, good electrical reliability and mechanical endurance both in flat and bent states. Anion vacancies in AlO–OH layer were contributed to the formation of conductive filament. This technical route with low cost and efficient fabrication process paves a feasible way for developing flexible non-volatile memory and wearable electronics.

Transparent, Flexible, Fatigue-Free, Optical-Read, and Nonvolatile Ferroelectric Memories.

Perovskite oxide films are widely used in various commercial industries. However, they are usually prepared at high temperature and in oxygen ambience, detrimental to most transparent and flexible substrates and bottom conductive electrodes such as indium tin oxide (ITO). It remains challenging to integrate perovskite oxides into transparent and flexible electronics. Here, the 1.2 wt % Ag-doped ITO (Ag-ITO) grown on a mica substrate is employed as the bottom electrode, which can withstand high temperature and repeated bending, and then we achieve the transparent, flexible, fatigue-free, and optical-read ferroelectric nonvolatile memories based on the mica/Ag-ITO/Bi3.25La0.75Ti3O12/ITO structures. The as-prepared memories show ∼80% transmittance for visible lights and fatigue-free performance after more than 108 writing/erasing cycles. These performances are stable after repeated bending down to 3 mm in a curvature radius. More importantly, the "1/0" state of the memory can be read out by the photovoltaic current rather than destructive polarization switching, an emergent functionality for many applications. This work substantially promotes the applications of perovskite oxide films in transparent and flexible electronics, including wearable devices.

Chemical Sensing Platforms Based on Organic Thin-Film Transistors Functionalized with Artificial Receptors.

Organic thin-film transistors (OTFTs) have attracted intense attention as promising electronic devices owing to their various applications such as rollable active-matrix displays, flexible nonvolatile memories, and radiofrequency identification (RFID) tags. To further broaden the scope of the application of OTFTs, we focus on the host-guest chemistry combined with the electronic devices. Extended-gate types of OTFTs functionalized with artificial receptors were fabricated to achieve chemical sensing of targets in complete aqueous media. Organic and inorganic ions (cations and anions), neutral molecules, and proteins, which are regarded as target analytes in the field of host-guest chemistry, were electrically detected by artificial receptors. Molecular recognition phenomena on the extended-gate electrode were evaluated by several analytical methods such as photoemission yield spectroscopy in the air, contact angle goniometry, and X-ray photoelectron spectroscopy. Interestingly, the electrical responses of the OTFTs were highly sensitive to the chemical structures of the guests. Thus, the OTFTs will facilitate the selective sensing of target analytes and the understanding of chemical conversions in biological and environmental systems. Furthermore, such cross-reactive responses observed in our studies will provide some important insights into next-generation sensing systems such as OTFT arrays. We strongly believe that our approach will enable the development of new intriguing sensor platforms in the field of host-guest chemistry, analytical chemistry, and organic electronics.

Flexible Lead-Free BaTiO3 Ferroelectric Elements With High Performance

High-quality epitaxial (111) BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin film was successfully fabricated on flexible fluorophlogopite mica substrate by radio frequency magnetron sputtering. The flexible BaTiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> thin-film element shows observably stable ferroelectric properties with the bending radius of 4 mm and well-mechanical fatigue resisting performance with 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sup> bending cycles at the bending radius of 6mm. Furthermore, it exhibits excellent ferroelectric fatigue resistance after suffering 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">6</sup> bipolar switching cycles. Most importantly, the element shows good thermal stability in temperature range from 25°C to 100°C. All these stable ferroelectric properties indicate their enormous potential in flexible non-volatile memory devices under harsh working environment.

Thermally Stable and Radiation Hard Ferroelectric Hf0.5Zr0.5O2 Thin Films on Muscovite Mica for Flexible Nonvolatile Memory Applications

Metal–ferroelectric–metal (MFM) capacitors on flexible substrates are promising for flexible nonvolatile memory applications, while the insufficient scalability of perovskite-based ferroelectric th...

Non-volatile resistive switching based on zirconium dioxide: poly (4-vinylphenol) nano-composite

Recently, resistive switching devices are getting tremendous attention since they can be used for data storage in future. In this paper, we propose a non-volatile resistive switching device based on inorganic and organic nano-composite of zirconium dioxide (ZrO2) and poly (4-vinylphenol) (PVP), respectively. The nano-composite active layer ZrO2:PVP is fabricated on indium tin oxide (ITO) coated polyethylene terephthalate (PET) substrate through a spin coater technology and the top electrodes are fabricated by using silver (Ag) epoxy. The proposed device demonstrates a bipolar resistive switching at low operating voltage of ± 1.5 V with high resistance state and low resistance state of 11.438 kΩ and 262.25 Ω, respectively. To verify the non-volatility and long-term stability, the retention time is checked for more than 30 days and Roff/Ron resistance ratio is ~ 44. The proposed device is analyzed electrically and mechanically to analyze the effect of PVP in ZrO2 for better memory application and FESEM is used for the morphological characteristics of the device. These results ensure that the ZrO2:PVP nano-composite-based resistive switching device can be a possible candidate for the forthcoming flexible and low-power non-volatile resistive switching memory device.

Charge-trap-assisted flexible nonvolatile memory applications using oxide-semiconductor thin-film transistors

We introduce mechanically flexible nonvolatile memory thin-film transistors (MTFTs) for future highly functional flexible and stretchable electronic devices and systems. The proposed memory devices are uniquely composed of oxide-semiconductor thin films and operated with charge-trap and detrap mechanisms for nonvolatile memory operations. Charge-trap-assisted MTFTs (CT-MTFTs) using In–Ga–Zn–O active and ZnO charge-trap layers are designed and fabricated on flexible poly(ethylene naphthalate) and colorless polyimide films prepared on carrier glass substrates. We describe the fabrication processes and evaluation methodologies for realizing flexible CT-MTFTs in a detailed way and discuss related technical issues. The device characteristics and memory performance of the fabricated flexible CT-MTFTs, including when the devices are mechanically strained, are extensively discussed. We also propose further improvements for remaining issues on device performance from the viewpoints of memory operations and mechanical flexibility.

Proton-irradiated Pb(Zr0.52Ti0.48)O3 thick films for flexible non-volatile memory applications

We investigated the ferroelectricity in proton-irradiated flexible Pb(Zr0.52Ti0.48)O3 (PZT) thick films and their non-volatile memory characteristics. The Ni-Cr metal foil substrate allowed high-quality polycrystalline PZT films with flexible functionality to be fabricated using conventional sol-gel and high-temperature annealing methods. The 10-MeV proton-irradiated PZT film exhibited an almost square polarization−electric field hysteresis curve with saturated (Ps) and remnant (Pr) polarizations of 18.9 and 17.0 μC/cm2, respectively; which are slightly lower than as-grown PZT with Ps = 28.7 μC/cm2 and Pr = 24.3 μC/cm2. The Pr did not decrease even after 1000 cycles of continuous bending and unbending at a bending radius of 2.14 mm and decreased slightly to ∼80% of its initial value after 105 s. Although the Pr decreased to ∼55% after 1010 cycles, the electric polarization remained switchable under positive and negative electric fields. These characteristics suggest that the flexible PZT films could be utilized in non-volatile memory device applications in environments with high doses of proton irradiation, such as those in aeronautics and nuclear power plants.

Fabrication of carboxymethyl cellulose and graphene oxide bio-nanocomposites for flexible nonvolatile resistive switching memory devices

Nowadays the development of natural biomaterials as promising building polymers for flexible, biodegradable, biocompatible and environmentally friendly electronic devices is of great interest. As the most common natural polymers, cellulose and its derivatives have the potential to be applied in the devices owing to the easy processing, nontoxicity and biodegradability. Here, write-once-read-many-times resistive switching devices based on biodegradable carboxymethyl cellulose-graphene oxide (CMC-GO) nanocomposite are demonstrated for the first time. The hybridization sites formed by the gelation of CMC and GO molecules contribute to the excellent memory behaviors. When compared with devices base on pure GO and CMC, the device with the Al/CMC-GO/Al/SiO2 structure exhibits brilliant write-once-read-many-times (WORM) switching characteristics such as high ON/OFF current ratio of ˜105, low switching voltage of 2.22 V, excellent stability and durability. What's more, the device shows high flexibility and good resistive switching behaviors even with soft PET substrate (Al/CMC-GO/Al/PET structure). This newly designed cellulose-graphene oxide-based polymer nanocomposites are quite cheap and easy processed for large scale manufacturing of memory devices and can further contribute to future biodegradable data storage applications such as portable stretchable displays, wearable electronics and electronic skins in the coming age of artificial intelligence.

Flexible nonvolatile resistive switching memory devices based on Bi2Te3 nanosheets films

Flexible nonvolatile resistive switching memory is a promising candidate for next generation storage technologies. Exploring new materials is of crucial importance to achieve further performances of flexible nonvolatile resistive switching memory. In this work, topological insulator bismuth telluride (Bi2Te3) nanosheets films were introduced into resistive switching memory devices firstly, a typical sandwich construction of Ag/Bi2Te3/indium tin oxide/polyethylene terephthalate with good flexibility, which exhibits nonvolatile bipolar resistive switching characteristics of operation voltage, good mechanical flexibility, and good storage stability. Furthermore, trap-controlled space charge limited current, thermionic emission are the dominant conduction mechanisms in the carrier transport. This work will provide an opportunity for Bi2Te3 nanosheets to be used in flexible electronics application.

Solution-processed flexible non-volatile resistive switching device based on poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)]: polyvinylpyrrolidone composite and its conduction mechanism

Recently, solution-processed resistive switches for wearable electronics have got tremendous attention and are required for different applications due to their easy process and fabrication. Hence, this paper proposes the solution-processed resistive switching memory device based on two polymers, poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)] (F8BT) and polyvinylpyrrolidone (PVP) composite, which is fabricated on a flexible indium–tin–oxide (ITO)-coated polyethylene terephthalate (PET) substrate through spin coating technology. The fabricated device demonstrates a perfect non-volatile bipolar resistive switching through small operating voltage sweeping of ± 1.5 V, and its high-resistance state (HRS) and low-resistance state (LRS) are 92678.89 Ω and 337.85 Ω, respectively. To verify the non-volatility and long-term stability, the device is checked for more than 700 endurance cycles. During these cycles, the variations of HRS and LRS are 48 Ω and 37.35 Ω, respectively. The retention time is checked for more than 60 days, and the ROFF/RON ratio is 274.31. The bendability is carried out up to bending diameters < 10 mm, and FESEM is used for the morphological characteristics of the device. Conduction mechanism of the proposed device is supported by space charge-limited conduction (SCLC) which is explained by the log–log I–V slope-fitting curve. The results insure that the F8BT:PVP composite-based resistive switching device is to be a potential candidate for the future flexible and low-power non-volatile resistive switching memory device.