Abstract
A novel nanocomposite-based non-volatile resistance switching random access memory device introducing single-walled carbon nanotube (SWCNT)@TiO2 core–shell wires was proposed for flexible electronics. The SWCNT was de-bundled by ultrasonication with sodium dodecylbenzene sulfonate (SDBS), and then the TiO2 skin layer on the SWCNT surface was successfully introduced by adding benzyl alcohol as a weak surfactant. The nanocomposite resistance switching layer was composed of the SWCNT@TiO2 core–shell wires and poly(vinyl alcohol) (PVA) matrix by a simple spin-coating method. The device exhibited reproducible resistance switching performance with a remarkably narrow distribution of operating parameters (VSET and VRESET were 2.63 ± 0.16 and 0.95 ± 0.11 V, respectively) with a large RON/ROFF ratio of 105 for 200 consecutive switching cycles. Furthermore, the excellent resistance switching behavior in our device was maintained against mechanical stress up to 105 bending test. We believe that the nanocomposite memory device with SWCNT@TiO2 core–shell wires would be a critical asset to realize practical application for a flexible non-volatile memory field.
Highlights
Increasing data storage, which demands computing and imaging electronics, has been necessitating the development of high-performance memory devices with fast operation speed, high data storage, and low power consumption[1,2,3,4]
The nanocomposite structures composed of a combination between inorganic clusters as a resistance switchable filler (RSF) and a polymer/organic matrix have currently emerged as the promising components for next-generation flexible resistance switching random access memory (ReRAM) memory devices because the nanocomposite system can ideally take excellent resistance switching properties of the inorganic material and good mechanical and optical properties of the organic-based material[11,12,13,14,15]
We proposed a core–shell structured resistance switchable filler based on single-walled carbon nanotube (CNT) (SWCNT) for flexible ReRAM devices with high resistive switchable performance
Summary
Increasing data storage, which demands computing and imaging electronics, has been necessitating the development of high-performance memory devices with fast operation speed, high data storage, and low power consumption[1,2,3,4]. It is necessary to develop a resistive switchable composite system without relying on the random distribution of the RSFs. In this paper, we proposed a core–shell structured resistance switchable filler based on single-walled CNT (SWCNT) for flexible ReRAM devices with high resistive switchable performance. The T iO2 resistive skin layer to induce resistive switching behavior was uniformly introduced on the surface of the physically de-bundled SWCNTs by weak-surfactant treatment of benzyl alcohol (BA).
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