Films For Solar Cell Applications Research Articles

Comment on “Spectroscopic ellipsometry and solar cell performance of Cs-doped MA0.05FA0.95Pb(I0.98Br0.02)3 triple cation perovskite thin films for solar cell applications” by A. M. El-naggar et al. (Applied Physics A (2022) 128:378)

Comment on “Spectroscopic ellipsometry and solar cell performance of Cs-doped MA0.05FA0.95Pb(I0.98Br0.02)3 triple cation perovskite thin films for solar cell applications” by A. M. El-naggar et al. (Applied Physics A (2022) 128:378)

Towards halide treatment on CdS thin films for solar cell applications: An evolution to ion size impact on segregation and grain boundaries passivation

In this study, an impact of halide ion size on the physical properties of 200 nm thin thermally evaporated CdS films is explored. The ex-situ halide treatment is performed using 0.2 M solutions of halide compounds viz. CdCl2, CdI2, MgF2, MgCl2 and MgI2 separately and subsequently air annealing at 200 °C. A detailed grain growth mechanism in CdS films based upon nature and size of cations and anions to the treatment species is deeply discussed. The recrystallization responsible for modulation in structural, optical, topographical, photoluminescence, electrical, morphological and compositional properties of CdS films is explored via formation of different complexes. The XRD patterns reveal formation of polycrystalline CdS thin films having mixture of cubic (with space group F4̅ 3 m) and hexagonal phases with (220) cubic preferential orientation. Different crystallographic constants are calculated and discussed where the crystallite size is varied from 34 nm to 48 nm with treatment. Surface topographical study indicates that surface roughness is altered with the halide treatment and observed maximum for MgCl2 treated CdS thin films. The pristine and halide treated CdS thin films show Ohmic nature owing to linear current-voltage behavior. Optical study demonstrates that MgI2 treated films have higher transmittance and lower absorbance and energy band gap is measured out in 2.04–2.48 eV range. PL spectra of CdS films reveal a strong red emission band appeared at ∼685 nm corresponding to Sulfur vacancies (VS) and possible A centers (XS+VCd2−)−. FESEM exploration reveals grain growth with probable activation where maximum grain size is obtained for MgF2 treated films. The EDS patterns confirm deposition of CdS films and also integration of F, Cl, I and Mg in the associated treated CdS films. The investigated findings reveal that size of halide ions plays a decisive role in modification of the physical properties of CdS thin films which could be implicated as optical window to CdTe and CIGS based photovoltaic devices.

Silver Alloying in Highly Efficient CuGaSe2Solar Cells with Different Buffer Layers

This study evaluates the effect of silver alloying, stoichiometry, and deposition temperature of wide‐gap (Ag,Cu)GaSe2(ACGS) absorber films for solar cell applications. Devices using a standard CdS buffer exhibit a strong anticorrelation between the open‐circuit voltage (VOC) and short‐circuit current density (JSC), withVOCdecreasing andJSCincreasing toward stoichiometric absorber composition. Increasing the ACGS deposition temperature leads to larger grains and improvedJSC, whileVOCis not affected. By adding more silver to the absorber (maximum tested [Ag]/([Ag]+[Cu]) [AAC] = 0.4), the widening of the space charge region (SCR) significantly enhances carrier collection. Experimental quantum efficiency spectra can be accurately simulated when assuming a very low diffusion length and perfect collection in the SCR. The highest efficiency of 8.3% (without antireflection coating [ARC]) is reached for an absorber with AAC = 0.4 grown at 600 °C. Replacing CdS by a (Zn,Sn)O buffer with lower electron affinity strongly mitigates interface recombination. Moreover, theVOC–JSCanticorrelation is not evident anymore and the highest efficiency of 11.2% (11.6% w/ARC,VOC = 985 mV,JSC = 18.6 mA cm−2, fill factor = 61.0%) is reached for a close‐stoichiometric ACGS solar cell with AAC = 0.4 processed at 650 °C.

Physical characterization of thermally evaporated Sn–Sb–Se thin films for solar cell applications

Physical characterization of thermally evaporated Sn–Sb–Se thin films for solar cell applications

Correlation between molar concentration and properties of sprayed copper oxide thin films

Copper oxide precursor solutions containing 0.10 M, 0.15 M, 0.20 M and 0.25 M concentration of copper were deposited on a glass substrate using the spray pyrolysis method. The structural, optical and surface properties of the resulting copper oxide thin films were studied using x-ray diffraction, UV–visible spectroscopy and scanning electron microscopy. Structural studies indicate the absence of secondary phases of copper oxide in the spray-deposited copper oxide thin film with 0.10 M concentration. Optical characterization reveals highest absorbance and lowest transmittance at 0.10 M concentration with an estimated optical bandgap of 1.2 eV. The SEM micrographs reveals a non-porous and comparatively more homogenous surface at 0.10 M concentration. The results show that molar concentration of copper plays a vital role in the development of copper oxide (CuO) thin film for solar cell application. The results have further validated the theoretical predictions of the GW approximations on phases of copper oxide thin films.

Structural and morphological properties of RF sputtered Cu2ZnSnS4 thin film for solar cell application

Structural and morphological properties of RF sputtered Cu2ZnSnS4 thin film for solar cell application

Mechanistic Study of the Transition from Antimony Oxide to Antimony Sulfide in the Hydrothermal Process to Obtain Highly Efficient Solar Cells.

Obtaining high-quality absorber layers is a major task for constructing efficient thin-film solar cells. Hydrothermal deposition is considered a promising method for preparing high-quality antimony sulfide (Sb2 S3 ) films for solar cell applications. In the hydrothermal process, the precursor reactants play an important role in controlling the film formation process and thus the film quality. In this study, Sb2 O3 is applied as a new Sb source to replace the traditional antimony potassium tartrate to modulate the growth process of the Sb2 S3 film. The reaction mechanism of the transition from Sb2 O3 to Sb2 S3 in the hydrothermal process is revealed. Through controlling the nucleation and deposition processes, high-quality Sb2 S3 films are prepared with longer carrier lifetimes and lower deep-level defect densities than those prepared from the traditional Sb source of antimony potassium tartrate. Consequently, a solar cell device based on this improved Sb2 S3 delivers a high power conversion efficiency of 6.51 %, which is in the top tier for Sb2 S3 -based solar devices using hydrothermal methods. This research provides a new and competitive Sb source for hydrothermal growth of high-quality antimony chalcogenide films for solar cell applications.

Fabrication of innovative diffraction gratings for light absorption enhancement in silicon thin films for solar cell application

Fabrication of innovative diffraction gratings for light absorption enhancement in silicon thin films for solar cell application

Correlation between Molar Concentration and Properties of Sprayed Copper Oxide Thin Films for Solar Cell Application

Correlation between Molar Concentration and Properties of Sprayed Copper Oxide Thin Films for Solar Cell Application

A study of bandgap-graded CZTGSe kesterite thin films for solar cell applications

The sustainable and harmless Cu2ZnSn(S,Se)4 kesterite materials for thin-film photovoltaics are still lacking efficiency, which may be solved by bandgap grading, herein obtained by two-step annealing in H2Se gas of metallic precursors.

Electrical Characterization of Chemically Grown CdS and CdTe Thin Films for Solar Cell Application

Thin films of Cadmium Sulphide (CdS) and Cadmium Telluride (CdTe) have gained a great deal of interest due to their potential applications in solar cells. Deposition of CdS and CdTe thin films were performed on Soda Lime glass and FTO substrate at 400℃ and 300℃ respectively using spray pyrolysis technique. The Hall Effect property was measured for the deposited CdS and CdTe films. These results shows the resistivity and mobility of CdS films deposited at 400℃ were 1.588×104 Ωcm and 5.619×102 cm2/Vs, respectively, The annealed CdTe thin film had a resistivity value of 1.016×104 Ωcm, while the annealed and etched CdTe thin film had a resistivity value of 4.52×104 Ωcm, The resultant films are observed to be good to make a solar cell with CdS as a window layer and CdTe as absorber layer.

Morphological Tuning of Bi2Se3 Thin Films for Photoelectrochemical Performance

AbstractIn the present report, we have reported the bismuth selenide (Bi2Se3) thin films for solar cell application. The synthesis of bismuth selenide (Bi2Se3) thin film by using modified chemical bath deposition i. e. arrested precipitation technique (APT). The Physico‐chemical properties of synthesized Bi2Se3 thin films are studied as a function of surfactants. The XRD patterns confirm the nanocrystalline nature. The SEM images reveal morphological transitions from fibrous reticulate structure to spongy balls‐like structure. The compositional analysis confirms bismuth and selenium in good stiochiometry. Optical studies show presence of a absorption in the visible range with a band gap in the range of 1.5 eV to 1.9 eV. All these results reveal that surfactant‐assisted Bi2Se3 thin film is a better candidate for PEC performance.

Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

Improvement of III-V dilute nitride thin films for solar cell application: Effect of antimony doping

Temperature effects on optical characteristics of thermally evaporated CuSbSe2 thin films for solar cell applications

CuSbSe2 thin film was deposited by co-evaporation of binary CuSe and Sb2Se3 sources. The structural and morphological properties of the deposited thin film were investigated with X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy-dispersive X-ray analysis measurements. XRD pattern indicated that deposited thin film has an orthorhombic crystalline structure with the preferential orientation of (013) direction. SEM image presented that the thin film surface is almost uniform. The optical characteristics of the deposited CuSbSe2 thin film were investigated in detail by performing room temperature Raman, temperature-dependent transmittance spectroscopy, and photoluminescence techniques. Raman spectrum exhibited one mode at around 210 cm−1 associated with Ag vibrational mode. The derivative spectroscopy technique was used to obtain the band gap energy of the films. Temperature dependence of band gap energy was investigated by considering the Varshni model. The rate of change of band gap energy, absolute zero value of gap energy, and Debye temperature were determined as −1.3 × 10−4 eV/K, 1.21 eV, and 297 ± 51 K, respectively. The photoluminescence spectrum indicated the room temperature direct band gap energy as 1.30 eV.

Study on preparation and characterisation of pure and lithium incorporated SnS thin films for solar cell applications

A ternary transition metal sulfide was synthesized and characterized by the sonochemical approach in this study, namely a Li (Li) and tin sulfide (SnS) thin film incorporating lithium (Li). Lithium incorporated SnS thin films (Li-SnS) were synthesized by equal molar ratios used in the synthesis approach. In these prepared thin films, the crystallite size averaged 5 nm and the thin films were of good crystalline nature. Nanoparticles in the thin film samples have a uniform sphere shape, with clusters forming in a few places, as seen by FE-SEM images. The presence of Li, Sn and S was confirmed through XRF spectral analysis. From the fingerprint region of the FTIR spectra, the presence of Ni, Li, Sn and sulphur was confirmed and no other impurities were detected. The UV absorption analysis was highly indicating the enhanced photon absorption behaviour of the prepared thin film samples due to the incorporation of Li with SnS samples. The efficiencies of the solar cell fabricated with SnS, Li-SnS, were found to be 6.21 and 7.92 %. From the results it is concluded that Li-SnS thin film samples can be a potential candidate for use as an electrode in solar cell applications

Synthesis and characterization of Cu2S:Al thin films for solar cell applications

In this work Nano crystalline (Cu2S) thin films pure and doped 3% Al with a thickness of 400±20 nm was precipitated by thermic steaming technicality on glass substrate beneath a vacuum of ~ 2 × 10− 6 mbar at R.T to survey the influence of doping and annealing after doping at 573 K for one hour on its structural, electrical and visual properties. Structural properties of these movies are attainment using X-ray variation (XRD) which showed Cu2S phase with polycrystalline in nature and forming hexagonal temple ,with the distinguish trend along the (220) grade, varying crystallites size from (42.1-62.06) nm after doping and annealing. AFM investigations of these films show that increase average grain size from 105.05 nm to 146.54 nm while decrease the roughness from 5.93 nm to 4.73 nm after doping. Hall measurements show that the conductivity change from 1.43 × 10− 3 to 7.33 × 103 (Ω cm)-1 , these films have p-type conductivity and the mobility varied from 3.87 × 102 to 8.48 × 1010 cm2 /V.s. Optical constants were calculated for these films in the range of wave length (300-1100) nm using UV/Visible measurement. The visual properties showed that Cu2S membrane have a high value of the absorption coefficient and decrease the optical energy gap values from (2.25-1.5) eV after doping with 3% Al. The characterization of these films can chose in the application of solar cells.

Lead-doped cubic tin sulfide thin films for solar cell applications

Cubic tin sulfide (SnS), an earth-abundant and non-toxic material, is a promising candidate for thin film solar cells. Lead(Pb)-doped (0.0–11.6 atomic percent (at.%)) cubic SnS thin films were prepared via chemical bath deposition to achieve improved structural, optical, and electrical properties. X-ray diffraction studies revealed that the films were polycrystalline and exhibited cubic crystal structure, decreased crystallite size, and increased lattice parameter, strain, and dislocation density on increasing Pb content. Field emission scanning electron microscopy images revealed increased grain size up to 2.5 at.% and decreased grain size beyond 2.5 at.% of Pb content. Optical absorption studies showed a decrease in the band gap from 1.73 to 1.64 eV upon increasing the Pb dopant concentration. Hall measurements revealed an increase in the hole mobility up to 2.5 at.% and decreased mobility beyond the 2.5 at.% of Pb dopant concentration. In conclusion, the prepared cubic SnS films have potential for application in solar cells because of the demonstrated reduced optical band gap and enhanced hole mobility resulting from Pb-doping.

Biological approach synthesis and characterization of iron sulfide (FeS) thin films from banana peel extract for contamination of environmental remediation

Biological approach synthesis and characterization of Iron Sulfide (FeS) thin films from banana peel extract for contamination remediation of environment studied. Iron chloride, Sodium thiosulfate and Ethylene-di-amine-tetra acetate (EDTA) were used as precursor solutions without further purification. The nanoparticle of banana peel was extracted and prepared with synthesized FeS thin films and analyzed by X ray-diffraction for structural examination, Scanning electron microscope (SEM) for surface morphological analysis, Ultra-violet-visible-spectrometer (UV–Vis) and photo-luminescence spectro-photo-meter (P-L) for optical characterizations. XRD peaks are shown with recognized to (110), (200), (310), and (301) crystalline planes. The occurrence of this deflection peak are recognised the FeS crystal segment of the tetragonal crystalline systems. SEM micrographs of the films prepared biological method show the distribution of grains, which cover the surface of the substrate completely and are uniform and films deposited purely have defects. The photo-luminescence, absorbance, and transmittance strength of banana peel extract FeS thin film is greater than pure FeS thin films in which wide-ranging and symmetries groups were perceived. In the present study, the comparison of pure FeS thin films and Nano synthesized banana peel extract with FeS thin films was studied. It is observed that Nano synthesized banana fibre absorbs higher than pure FeS thin films in solar cell application. Finally, green synthesis is an ecofriendly, easy and cheap promising method for the fabrication of thin films for solar cell applications.

Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

Cu2SnS3 (CTS) is emerging as a promising absorber for the next generation thin film solar cells (TFSC) due to its excellent optical and electronic properties, earth-abundance and eco-friendly elemental composition. In addition, CTS can be used as precursor films for the Cu2ZnSnS4 (CZTS) synthesis. The optical properties of CTS are influenced by stoichiometry, crystalline structure, secondary phases and crystallite size. Routes for obtaining CTS films with optimized properties for TFSC are still being sought. Here, the CTS thin films synthesized by magnetron sputtering on soda lime glass (SLG) using Cu and SnS2 targets in two different stacks, were studied. The SLG\\Cu\\SnS2 and SLG\\SnS2\\Cu stacks were annealed in S and Sn + S atmospheres, at various temperatures. Both stacks show a polymorphic structure, and higher annealing temperatures favor the monoclinic CTS phase formation. Morphology is influenced by the stacking order since a SnS2 top layer generates several voids on the surface due to the evaporation of SnS, while a Cu top layer provides uniform and void-free surfaces. The films in the copper-capped stack annealed under Sn + S atmosphere have the best structural, morphological, compositional and optical properties, with tunable band gaps between 1.18 and 1.37 eV. Remarkably, secondary phases are present only in a very low percent (< 3.5%) in samples annealed at higher temperatures. This new synthesis strategy opens the way for obtaining CTS thin films for solar cell applications, that can be used also as intermediary stage for CZTS synthesis.

Influence of Substrate Temperature and Sulfurization on Sputtered Cu2SnGe(S,Se)3 Thin Films for Solar Cell Application

This work presents the influence of substrate temperature ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text{sub}}$ </tex-math></inline-formula> ) and post-sulfurization on compositional, structural, electrical, and optical properties of dual-ion beam sputtering (DIBS)-grown Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> (Sn,Ge)(S,Se) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> (CTGSSe) thin films grown on a soda-lime glass (SLG) substrate using a single target. Post-sulfurization of CTGSSe thin films is carried out in a quartz tube chemical vapor deposition (CVD) system. X-ray diffraction (XRD) analysis reveals that the crystal structure of CTGSSe thin films is preferentially tetragonal with (112) and (204) lattice planes at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2\theta $ </tex-math></inline-formula> values of 27.3° and 47.3°, respectively. Field-emission scanning electron microscopy (SEM) has emphasized that the high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text{sub}}$ </tex-math></inline-formula> growth resulted in a larger grain size of 87 nm and better thin-film morphology. Spectroscopic ellipsometry (SE) analysis shows the bandgap values of 1.46–1.62 eV by varying <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${T}_{\text{sub}}$ </tex-math></inline-formula> from room temperature (RT) to 300 °C. Furthermore, the bandgap widens from 1.56 to 1.64 eV in the CTGSSe thin films due to post-sulfurization.