Nb thin films deposited by modulated pulsed power magnetron sputtering (MPPMS) and deep oscillation magnetron sputtering (DOMS) were comparatively studied under a similar average power by controlling the micropulse duty cycle. It was found that DOMS discharge both showed higher discharge peak current and peak voltage, time delay between the current and voltage was much smaller compared with a MPPMS discharge. All Nb thin films were observed with Nb(110) preferred orientation and compact columnar structure. The increase of micropulse duty cycle led the gradual movement of Nb(110) to high scattering angle direction, meanwhile the DOMS Nb(100) diffraction peaks were all on the left of MPPMS Nb(110). An increase for compressive residual stress σ could be observed for both techniques, and all DOMS Nb thin films showed higher residual stress, hardness and elastic modulus. The anomalous increase in σ also led to the deterioration of DOMS Nb thin film scratch adhesion. Despite the grain sizes of DOMS Nb thin films were all smaller than MPPMS Nb thin films, σ in DOMS Nb thin films generated by the adatom diffusion and ion irradiation still overwhelmed the tensile stress generated by the volume shrinkage of the growing grains. The special afterglow of DOMS in the microsecond scale gave a new controlling dimension for thin film growth.
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