Studies of Mn4Si7 coatings of different thicknesses have shown that magnetron deposition practically does not change the composition of the coating in comparison with the composition of the target. The technology and basic modes of creating the necessary targets for a magnetron sputtering device are presented. Targets were created by adding silicon and manganese powders in the required amount and heating them under vacuum conditions at high temperature and pressure. Thin silicide films (coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. Studies of the transmission, absorption, and reflection coefficients of coatings in the visible region of the spectrum have shown that for the Mn4Si7 coating, the reflection coefficient is practically the same at all wavelengths. It was found that the Seebeck coefficient varies from 16 µV/K to 22 µV/K, and the resistance decreases from 77 Ω to 20 Ω with increasing thickness of the thin Mn4Si7 coating.
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