Fill Factor Values Research Articles

On the chances and challenges of combining electron‐collecting nPOLO and hole‐collecting Al‐p+ contacts in highly efficient p‐type c‐Si solar cells

AbstractISFH is following a distinct cell development roadmap, which comprises—as a short‐term concept—the combination of an n‐type doped electron‐collecting poly‐Si on oxide (POLO) junction with an Al‐alloyed p+ junction for hole collection. This combination can be integrated either in front‐ and back‐contacted back junction cells (POLO‐BJ) or in interdigitated back‐contacted cells (POLO‐IBC). Here, we present recent progress with these two cell concepts. We report on a certified M2‐sized 22.9% efficient POLO‐BJ cell with a temperature coefficient TCη of only −(0.3 ± 0.02) %rel/K and a certified 23.7% (4 cm2 d.a.) efficient POLO‐IBC cell. We discuss various specific conceptual aspects of this technology and present a simulation‐based sensitivity analysis for quantities related to the quality of the hole‐collecting alloyed Al‐p+ junction which are subject to continuous improvement and thus hard to predict exactly. We report that the measured pseudo fill factor values decrease more due to metallization than would be expected from recombination in the metallized regions with an ideality factor of one only. The gap to pseudo fill factor values that are theoretically achievable at the respective open‐circuit voltages is 1.1%abs (Ga‐doped wafer) for POLO‐IBC and 1.4%abs (B‐doped wafer) to 2%abs (Ga‐doped wafer) for POLO‐BJ. With an embedded blocking layer for Ag crystallites in the poly‐Si, we present a concept to reduce this gap.

A computational study of carrier lifetime, doping concentration, and thickness of window layer for GaAs solar cell based on Al2O3 antireflection layer

This paper reports on the computational study to investigate the high-performance gallium arsenide (GaAs) solar cells based on the Al2O3 antireflection coating (ARC) layer by optimizing the carrier lifetime, doping concentration, energy bandgap, thickness of window and absorber layers. In this simulation, the parameters like GaAs as an absorber layer, CdS as a window layer, and fixed thickness of the Al2O3 ARC layer were selected for performing the personal computer one dimensional (PC1D) simulation. As compared to GaAs solar cell with no ARC layer, GaAs solar cell with Al2O3 ARC layer (90 nm) presented the high power conversion efficiency (PCE) of 24.60% at absorber thickness 6 μm and 30 nm for window layer. The optimized values of carrier lifetime and doping concentration for high PCE were found to be 100 μs and 1 × 1017 cm−3 for both absorber and window layers, respectively. The Voc, PCE, and fill factor (FF) values gradually increased with the increase of carrier lifetime and doping concentration of the CdS window layer. At optimized parameters, the highest value of Isc = 3.11 A, Voc = 0.884 V and PCE = 24.60% were achieved by GaAs solar cells with Al2O3 ARC layer. This study proves that optimization of CdS window layer through carrier lifetime, thickness, doping concentrations, and bandgap, etc. would make the crucial component to manufacture cost-effective, high-performance GaAs solar cells based on Al2O3 ARC layer.

Performance Comparison of CdTe:Na, CdTe:As, and CdTe:P Single Crystals for Solar Cell Applications.

We compared thermal stability, open-circuit voltage, short-circuit current, and fill factor values of single-crystal Cadmium telluride (CdTe) grown using the vertical Bridgman (VB) technique and doped with group V elements (phosphorus and arsenic), and group Ⅰ element (sodium), followed by an annealing process. The sodium-doped CdTe maintained a hole density of 1016 cm−3 or higher; after annealing for a long time, this decreased to 1015 cm−3 or less. The arsenic-doped CdTe maintained a hole density of approximately 1016 cm−3 even after the annealing process; however its bulk minority carrier lifetime decreased by approximately 10%. The phosphorus-doped CdTe maintained its properties after the annealing process, ultimately achieving a hole density of ~1016 cm−3 and a minority carrier lifetime of ~40 ns. The characteristics of a single-crystal solar cell were evaluated using a solar cell device that contained single-crystal CdTe with various dopants. The sodium-doped sample exhibited poor interfacial properties, and its performance decreased rapidly during annealing. The samples doped with group V elements exhibited stable characteristics even during long-term annealing. We concluded, therefore, that group V elements dopants are more suitable for CdTe single-crystal-based solar cell applications involving thermal stress conditions, such as space missions or extreme fabrication temperature environments.

Effect of Alkyl Substitution to the Active Layer Material for Improved Efficiency in Bilayer Organic Solar Cell

Organic based thin film solar cells have achieved considerable power conversion efficiency (PCE). As there is a desire to the benefits of on-demand energy production, future world energy consumption will continue to rise. Bilayer organic solar cell has two active layers in between conductive electrodes. Present report, is a simulation study to compare the PCE of bilayer organic solar cells by varying one of its active layer material using General-Purpose Photovoltaic Device Model or GPVDM software. The materials used for active layer are MEH-M3EH-PPV, MEH-DOO-PPV, MEH-PPV and M3EH-PPV based on the degree of alkyl substitutions. Data of absorption spectrum, refractive index spectrum and photoluminescence spectrum are added as input and obtained the simulation results. Values of power conversion efficiencies, fill factor and other photovoltaic parameter values for each bilayer organic solar cell is obtained. Transmittance spectrum, reflectance spectrum, Current density-Voltage plot, variation of charge density and total charge density with applied voltage are attained from the simulation and compared. The results give out effect of side chain alkyl substitution on efficiency of bilayer organic solar cell. MEH-DOO-PPV with longest alkyl side chain substitution has maximum power conversion efficiency. This intuition helps to design suitable bilayer organic solar cell, which has got its relevant applications in the optoelectronics.

Post‐mortem analysis of a commercial Copper Indium Gallium Diselenide (CIGS) photovoltaic module after potential induced degradation

AbstractAn extensive post‐mortem analysis was conducted on a commercial copper‐(indium‐gallium)‐diselenide (CIGS) photovoltaic module that degraded after exposure to the high voltage stress of a standardized potential induced degradation (PID) test. We employed a custom‐developed coring technique to extract samples from the full‐size field module, which showed degraded and nondegraded areas (regarded as reference) in electroluminescence after the PID test. The resulting solar cell samples were compared based on their electrical properties and sodium profiles using a wide range of laboratory‐based analysis techniques including photoluminescence and lock‐in thermography imaging, current–voltage measurements, and glow discharge optical emission spectroscopy. The samples that were extracted from the degraded areas of the module showed lower photoluminescence intensity and had significantly lower open‐circuit voltage V(oc) and fill factor (FF) values in comparison with reference samples. An increased content of sodium within the absorber layer was also observed for these samples, linking sodium migration to PID. These observations at the module level are consistent with earlier reports on PID‐stressed CIGS cells and mini‐modules. This is to our knowledge the first reported study of a microscopic investigation on a real‐life full‐scale CIGS module after PID.

Exploiting Novel Unfused-Ring Acceptor for Efficient Organic Solar Cells with Record Open-Circuit Voltage and Fill Factor.

Unfused-ring acceptors (UFAs) show bright application prospects in organic solar cells (OSCs) thanks to their easy synthesis, low cost, and good device performance. The selection of central-core building block and suitable side chain are the key factors to achieve high-performance UFAs. Current tremendous endeavors for the development of UFAs mainly concentrate on obtaining higher short-circuit current density (Jsc ), albeit accompanied by low open-circuit voltage (Voc ) and modest fill factor (FF). Herein, two novel A-D-A'-D-A type UFAs (BTCD-IC and BTCD-2FIC), which have the same new electron-withdrawing central-core dithieno[3',2':3,4;2'',3'':5,6]-benzo[1,2-c][1,2,5]thiadia-zole (DTBT) and cyclopentadithiophene unit (CPDT, substituted by 2-butyl-1-octyl alkyl chain) coupling with different terminals, were designed and synthesized. Two UFAs showed strong and broad light absorption in the wavelength range of 300-850 nm owing to the strong intramolecular charge transfer effect favorable by DTBT core. Compared with BTCD-IC, BTCD-2FIC with F-containing terminal group exhibited higher molar extinction coefficient, lower energy level, higher charge mobility, stronger crystallinity, more ordered molecular stacking, and better film morphology. As a result, when blended with donor polymer PBDB-T (poly[(2,6-(4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b']dithiophene)-co-(1,3-di(5-thiophene-2-yl)-5,7-bis(2-ethylhexyl)benzo[1,2-c:4,5-c']-dithiophene-4,8-dione)]), the BTCD-2FIC-based OSC achieved a superior power conversion efficiency (PCE) of 11.32 %, with a high Voc of 0.85 V, a Jsc of 18.24 mA cm-2 , and a FF of 73 %, than BTCD-IC-based OSC (PCE=8.96 %). Impressively, the simultaneously enhanced Voc and FF values of the PBDB-T:BTCD-2FIC device were the highest values of the A-D-A'-D-A-type UFAs. The results demonstrate the application of electron-withdrawing DTBT central-core unit in efficient UFAs provides meaningful molecular design guidance for high-performance OSCs.

NIR-Absorbing Electron Acceptor Based on a Selenium-Heterocyclic Core Attaching to Phenylalkyl Side Chains for Polymer Solar Cells with 17.3% Efficiency

Selenium-heterocyclic and side-chain strategies for developing near-infrared (NIR) small fused-ring acceptors (FRAs) to further obtain short-circuit current density (Jsc) have proven advantageous in the top-performing polymer solar cells (PSCs). Herein, a new electron-rich central selenium-containing heterocycle core (BTSe) attaching alkyl side chains with a terminal phenyl group was coupled with a difluorinated and dichlorinated electron-accepting terminal 1,1-dicyanomethylene-3-indanone (IC) to afford two types of new FRAs, BTSe-IC2F and BTSe-IC2Cl. Interestingly, in spite of the weaker intramolecular charge transfer, BTSe-IC2F shows a stronger NIR response because of the smaller bandgap (Egopt) up to 1.26 eV, benefiting from the stronger ordered molecular packing in comparison to BTSe-IC2Cl with an Egopt of 1.30 eV. Additionally, thermal annealing induced an evident red shift by ∼50 nm in the absorption of D18:BTSe-IC2F blend films. Such a phenomenon may be attributed to the synergistic impact of the formation of inward constriction toward the molecular backbone because of the combination of bulky side chains and fluorinated IC as well as the reduced aromaticity of the selenium heterocycle. Consequently, the thermally annealed device based on BTSe-IC2F/D18 achieves a champion power conversion efficiency (PCE) of 17.3% with a high fill factor (FF) of 77.22%, which is among the highest reported PCE values for selenium-heterocyclic FRAs in binary PSCs. The improved Jsc and FF values of the D18:BTSe-IC2F film are simultaneously achieved mainly because of the preferred face-on orientations, the well-balanced electron/hole mobility, and the favorable blend morphology compared to D18:BTSe-IC2Cl. This work suggests that the selenium-heterocyclic fused-ring core (with proper side chains) combined with fluorinated terminal groups is an effective strategy for obtaining highly efficient NIR-responsive FRAs.

Facile Surface Engineering of Composite Electron Transport Layer for Highly Efficient Perovskite Solar Cells with a Fill Factor Exceeding 81%

AbstractAfter perovskite became a star material, research on perovskite solar cells (PSCs) became a hot topic and developed rapidly. Electron transport layers (ETLs) with high mobility, low‐defect state, and suitable energy level arrangement dominate the development of planar heterojunction PSCs. In this work, the K+ and Cs+ doped composite SnO2 ETL (x mg KC‐SnO2) by a continuous spin‐coating of the x mg Cs+@KOH and SnO2 aqueous solution shows a substantial improvement in carries extraction, transport and collection properties, leading to the increased fill factor (FF) from 72.48% to 81.00% of the planar heterojunction PSCs, and finally the champion device average efficiency is 21.62%. Moreover, this work improves the interface contacts between ETL/Perovskite, as it reduces energy disorder and simultaneously promotes electron transport, charge extraction at the interface, improve energy level alignment and quasi‐Fermi level splitting, and decreased resistance for charge transfer in the device. In conclusion, this simple and effective method of improving the FF value provides a certain shortcut to the performance of plane heterogeneous perovskite devices.

Numerical simulations of 26.11% efficient planar CH3NH3PbI3 perovskite n-i-p solar cell

The current research work identifies a novel combination of perovskite solar cell (PSC) layers that improves the effectiveness of a solar cell. In this research work, analysis and optimization of the results for a CH3NH3PbI3 perovskite-based solar cell is performed using SCAPS 1D modelling software. The impact of varying multiple characteristics including band gap, thickness, and total defect density on the effectiveness of a PSC has been studied and analysed. In terms of performance parameters, the current research work's findings are promising. The proposed structure attains an open circuit voltage (VOC) of 1.112 V along with a short circuit current density (JSC) of 26.02 mA/cm2. Consequently, the proposed simulated structure has a power conversion efficiency (PCE) of 26.11% and 86.27% value of fill factor.

Solution-Processed Small Molecule Inverted Solar Cells: Impact of Electron Transport Layers

In this work, the use of poly [(9,9-bis (30- (N,N-dimethylamino) propyl) -2,7-fluorene) -alt-2,7- (9,9-dioctylfluorene) (PFN) as electron transport layer (ETL) in inverted small molecule solar cells (SM-iOSCs) is analyzed. The optical and electrical characteristics obtained are compared with those obtained for similar SM-iOSCs where the ETL was zinc oxide. The p-DTS(FBTTh <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> and PC <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">70</sub> BM materials are used as donor and acceptor in the bulk heterojunction active layer, respectively for all devices. The photovoltaic devices exhibited a power conversion efficiency of 6.75% under 1 sun illumination. Impedance measurements were used to understand the causes that dominate the performance of the devices. We found that the loss resistance is governed by the PFN layer, which results in a lower fill factor value. Studies of atomic force microscopy, external quantum efficiency, and absorption UV-vis on the active layer have been performed to understand the effects of the charge transport dynamics on the performance of the devices.

Charge carrier dynamics and photovoltaic properties of near-infrared absorbing squaraine incorporated solution-processed additive-free PTB7:PCBM based ternary solar cells

The introduction of a third component vehemently modifies the morphology and charge carrier dynamics in the blend of a donor–acceptor pair, thereby affecting the photovoltaic properties of organic solar cells (OSCs). Combining steady-state, impedance, and transient spectroscopic measurements, photovoltaic properties of 2,4-bis[4-(N,N-diisobutylamino)-2,6-dihydroxyphenyl] squaraine (SQ) incorporated additive-free PTB7:PC70BM OSCs are assessed. As observed from steady-state measurements, concomitant enhancement in open-circuit voltage (VOC) and short-circuit current density (JSC) has caused a 33% enhancement in power conversion efficiency (PCE) with good reliability and reproducibility. On introducing 25 wt.% SQ to the OSCs, V OC has increased from 0.74 to 0.80 V, while J SC has improved from 11.3 to 13.9 mA cm−2 with an increment in exciton dissociation probability rate from 81.5% to 94.9%. However, the fill factor values show inconsistent marginal variations with SQ addition. Equivalent circuit modeling of bias-voltage dependent impedance spectra along with transient photovoltage measurements reveal an improvement in effective charge carrier lifetime for the SQ incorporated OSCs, in comparison to the binary device. The addition of SQ also ensures better charge transport and extraction, as evidenced by photo-CELIV and transient photocurrent analysis. Atomic force microscopy (AFM) images confirm the effective tuning of the morphology of the active layer when SQ is introduced into the binary blend, favoring efficient charge dissociation and transport. The possible operation mechanism of SQ incorporated ternary OSCs is proposed based on photoluminescence and AFM measurements. Moreover, the un-encapsulated OSC with 25 wt.% SQ has retained 91% of the initial PCE, while for the binary device the PCE declined to ∼75% of the initial value after 200 h of continuous 1 sun illumination from a white LED in ambient atmosphere.

Symmetrical and unsymmetrical squaraine sensitizers for dye-sensitized solar cells: Present day advances and future challenges

The requirement for energy is ever increasing in the past few years due to the need for the innovation of clean energy and eco-friendly technologies. Symmetric and asymmetric SQ-dyes have received increasing attention and great potential for use as SQ-sensitizers for application in dye sensitized solar cells (DSSC).This review article gives a synopsis of the advancements on SQ-sensitizers in the domain of DSSC and the chance used to enhance their overall energy conversion efficiency. Specifically, the primary factors in charge of the low values of open-circuit voltage (Voc) short-circuit photocurrent (Jsc) and fill factor (FF) are debated in detail. Future orientations in research and expanded absorptions of near-infrared region (NIR) by development organic substances and their applications are suggested from a personal point of view. Copyright © 2018 VBRI Press.

Theoretical and Experimental Studies of Electrical Parameters : Irradiance G and Temperature T Effects

The present work explores the effects of temperature T and irradiance G on electrical parameters as serie resisrance, fill factor and conversion efficiency within the base region of p-n junction of a polycristaline solar cell. This work is conducted in two forms as a theoretical study and an experimental study. Indeed, the solar cell is submitted firstly to various temperature and secondly to various irradiance values. From a theoretical approach based on the single exponential model theory, the I − V equation expression is estabilished. This expression taking account implicitely G and T . This equation I − V permits to developp Matlab script to calculate I − V and P − V values versus T and G. The serie resisrance, fill factor and conversion efficiency values versus T and G are then deducted and analyzed. From a simple experimental setup permitting I − V values measurements , the experimental values of serie resistance, fill factor and conversion efficiency are calculated and also analyzed. First, these theoretical and experimental results are in good agreement and secondo are in good agreement with those of the literature.

Atomic-layer-deposited ZnSnO buffer layers for kesterite solar cells: Impact of Zn/(Zn+Sn) ratio on device performance

Atomic layer deposition (ALD) has been used to synthesize earth-abundant and non-toxic ZnSnO thin films as potential replacements for CdS buffer layers in thin-film solar cells. In this study, ALD ZnSnO films with various Zn/(Zn+Sn) ratios ranging from 0.66 to 0.96 were synthesized and their application as buffer layers in CZTSSe solar cells was investigated. The solar cells fabricated with ZnSnO buffer layers exhibit a significant improvement in short-circuit current density (Jsc) compared to the CdS-buffered reference device, primarily due to the wide band gap and high transparency of ZnSnO films. The CZTSSe/ZnSnO solar cell results also demonstrated that the device parameters, particularly the open-circuit voltage (Voc) and fill factor (FF), were significantly affected by the Zn/(Zn+Sn) ratio. A cell efficiency of 8.54% with a Voc of 0.436 V, Jsc of 32.98 mA cm−2, and FF of 0.59 was obtained with ALD ZnSnO buffer layer with an optimal Zn/(Zn+Sn) ratio of 0.76. Increasing or decreasing the Zn/(Zn+Sn) ratio leads to a gradual decrease in the FF and Voc values, which eventually deteriorates device performance. Additionally, the uniform and conformal ALD process results in superior cell-to-cell uniformity for ZnSnO-buffered devices compared to chemical-bath-deposited CdS buffer layers.

A Holistic Study on the Effect of Annealing Temperature and Time on CH3NH3PbI3-Based Perovskite Solar Cell Characteristics

The time and annealing temperature for the film crystallization in perovskite solar cells (PSCs) is critical and is at the stake of device optimization. It governs the crystallization process, the film’s morphorlogy and texture and the level of non-radiative defects, which in whole control the power conversion efficiency (PCE). However, deciphering each of these parameters in the device cell characteristics remains not totally clear. In this work, we led a holistic study considering temperature and time for the MAPbI3 crystallization as a free parameter to study how the latter is impacting on the film’s characteristics and how the device figure of merit is affected. The results suggest that the crystallinity level of the grains plays an important role in the photo-current value whereas the morphology and PbI2 impurities resulting from the onset of thermal decomposition of MAPbI3 penalizes the cell photovoltage and the fill factor values. Based on this study, it is highlighted that flash high temperature annealing is beneficial to limit out-of-plane substrate grain boundaries, resulting in a device exhibiting 18.8% power conversion efficiency compared to 18.0% when more standard post-annealing procedure is employed.

Synthesis of pyrene-based Fe(II)-complex and its photovoltaic properties

&lt;p&gt;(E)-2-((pyren-1-ylmethylene)amino)phenol (3) containing pyrene linked through an imine bond to a phenol unit was synthesized and its Fe-complex 4 was prepared. The complex 4 is characterized by infrared (IR), x-ray diffraction (XRD) and UV-Vis spectroscopy techniques. The synthesized complex was used as a sensitizer in a solar cell structure. From the current density (J) - voltage (V) curve obtained, the values of the short-circuit current density (JSC), maximum current density (JM), open-circuit voltage (VOC) and maximum voltage (VM) for the complex 4 were determined as 6.68 mA /cm2, 4.73 mA /cm2, 0.56 V and 0.41 V, respectively. Using these parameters, the fill factor (FF) and power conversion efficiency value (η) of complex 4 were calculated as 0.52 and 1.94, respectively. This value shows that complex 4 can be used as an effective sensitiser in solar cell applications.&lt;/p&gt;&#x0D;

Organic photovoltaic modules integrated inside and outside a polytunnel roof

This paper investigates the differences electrical behavior and lifetime of organic photovoltaic (OPV) modules installed inside, on the outside of a polytunnel type greenhouse roof and on a fixed frame next to the polytunnel with the aim of finding an installation location that would reduce degradation and therefore prolong the lifetime OPV modules in a greenhouse application.The modules had different degradation rates, influenced by three factors: exposure to harsh weather conditions, mechanical stresses on the modules caused by the movement of the greenhouse plastic sheeting they were fixed to, and dust accumulation on the modules. Efficiency values of modules declined to 32%, 47% and 47% and fill factor values reduced by 33%, 21% and 21% for modules on top of the polytunnel, inside the polytunnel and on frames adjacent to the polytunnel respectively during the measurement period.Installing OPV modules inside a tunnel can increase module lifetimes and consequently increase the overall lifecycle output of the modules. Not fixing the OPV module directly to the polyethylene cover, thereby avoiding the stresses on the module due the film movement, could improve OPV lifetimes further.

Frequency filter for elastic bending waves: Poincaré map method and experiment

Abstract In this work, the Poincaré map numerical method was successfully developed to solve the fourth-order differential equation that describes the flexural vibrations of a beam, within the Timoshenko beam theory. The Euler-Bernoulli continuity conditions were considered, which are valid for frequencies smaller than the critical frequency. As an example, this method was used to design a complex elastic structure, characterized by a flexural frequency spectrum with a broad band gap. Such structure consists of two coupled phononic crystals, which were designed with filling factor values in such a way that in their bending frequency spectra, an allowed band of the first part, overlaps with a band gap of the second one and vice versa. The resulting composed system has a much wider effective gap than its original components, between 4 and 10.5 kHz. This system works as an elastic bending wave filter. Finally, these three structured elastic systems were constructed, and characterized by the acoustic resonance spectroscopy technique. The natural flexural frequencies as well as the corresponding wave amplitudes of each structured beam were measured. The experimental measurements show excellent agreement with the numerical simulation.

Effect of ZnO Nanomaterial and Red and Green Cabbage Dyes on the Performance of Dye-Sensitised Solar Cells

Visible light can be converted into electricity using dye sensitised solar cells (DSSCs), with their performance mainly based on the type of dye used as a sensitiser. Currently, dyes extracted from natural sources are highly preferred by researchers in this field. Natural dyes reduce the high cost of metal complex sensitisers and replace expensive processes of chemical synthesis with simple extraction processes. Natural dyes are environmentally friendly, abundant, easily extractable, and safe. Their application has become a promising development in DSSC technology. In this study, two natural dyes extracted from the plant leaves of green cabbage (GC) and red cabbage (RC) that were used as sensitisers. The performance characteristics of RC and GC extracts were investigated using both cyclic voltammetry and amperometry methods for solar cell detection. At an extraction temperature of 60 °C maintained for 8 h under optimum conditions, the measured values of maximum power (Pm), fill factor (FF), and efficiency (η) were 1.36 mW/cm2, 92.34%, and 0.161% for RC, and 0.349 mW/cm2, 44.19%, and 0.095% for GC, respectively. The RC and GC extracts exhibited excellent electrochemical performance with respect to current density potential and good cycling stability.

Impact of target power on the properties of sputtered intrinsic zinc oxide (i-ZnO) thin films and its thickness dependence performance on CISe solar cells

Highly resistive intrinsic zinc oxide (i-ZnO) thin films were deposited via radio frequency (RF) magnetron sputtering with varying the target power (80 W–140 W) at constant sputtering gas pressure (10 mTorr), and the structural, morphological, and optical properties were investigated. The i-ZnO thin film crystallized in Wurtzite hexagonal with a preferential orientation along (002) reflection plane. The variation in morphology from partitioned nano-walls to spherical grains pursued the impact of target power on the growth mechanism of i-ZnO thin films. The optical band gap was increased from 3.16 eV (80 W) to 3.28 eV (120 W) with increasing target power. Additionally, CuInSe 2 (CISe) solar cells were fabricated from modified sequentially evaporated metallic precursors by adopting different thicknesses of i-ZnO ranges from 40 nm to 120 nm. The formation of smooth and densely packed grains pursued the effective intermediate layer for the elemental interdiffusion from adjacent layers and protected against the shunt path. 80 nm was the optimum thickness of the i-ZnO film, which yielded 9.23% of conversion efficiency. A further increase of thickness from 80 nm reduced the photovoltaic performance, especially fill factor and elevated value of series resistance. These results explore experimentally the correlation between the i-ZnO thickness and its photovoltaic performance. • The intrinsic zinc oxide (i-ZnO) thin films were deposited by RF sputtering. • RF power affected the properties of i-ZnO thin films. • Sequentially deposited CISe solar cells were prepared followed by selenization. • 80 nm thick i-ZnO films yielded the best conversion efficiency (9.23%).