Field Stop IGBT Research Articles

산업용 인버터 구동을 위한 고효율 고내압 Field-stop IGBT 최적화 설계에 관한 연구

In this paper, Solar, Wind, fuel cell used in a Power conversion devices and industrial inverter motor to increase the efficiency of energy consumption, which is a core part of high-efficiency, high-voltage Trench Gate Field Stop IGBT was studied. For this purpose Planar type NPT IGBT and Planar type Field Stop IGBT have designed a basic structure designed to Trench Gate Field Stop IGBT based on the completed structure by analyzing the energy consumption of electrical characteristics, efficiency is a key part, high-efficiency and high-voltage inverter for industry regarding the optimization design for Trench Gate Field Stop IGBT.

A simulation study on a novel trench SJIGBT

An overall analysis of the trench superjunction insulated gate bipolar transistor (SJ IGBT) is presented and a detailed comparison between a trench SJ IGBT and a trench field stop IGBT is made by simulating with Sentaurus TCAD. More specifically, simulation results show that the trench SJ IGBT exhibits a breakdown voltage that is raised by 100 V while the on-state voltage is reduced by 0.2 V. At the same time, the turn-off loss is decreased by 50%. The effect of charge imbalance on the static and dynamic characteristics of the trench SJ IGBT is studied, and the trade-off between parameters and their sensitivity versus charge imbalance is discussed.

Numerical Evaluation of the Short-Circuit Performance of 3.3-kV CIGBT in Field-Stop Technology

In this paper, the short-circuit performance of a conventional 3.3-kV clustered insulated gate bipolar transistor (CIGBT) in field-stop (FS) technology is evaluated through extensive 2-D numerical simulations. For comparison, an equivalent 3.3-kV FS IGBT is considered. The conventional CIGBT shows superior performance of lower on-state voltage drop and saturation current densities in comparison to an equivalent IGBT. Further improvements to the CIGBT performance can be obtained without sacrificing on-state voltage drop by using a PMOS trench gate. The charge balance and electric field distribution with the varying n-buffer thickness at short-circuit condition are analyzed in detail.

1,200 V급 Trench Gate Field Stop IGBT 소자의 전기적 특성 향상 방안에 관한 연구

IGBT (insulated gate bipolar transistor) have received wide attention because of their high current conduction and good switching characteristics. To reduce the power loss of IGBT, the on state voltage drop should be lowered and the switching time should be shorted. However, there is Trade-off between the breakdown voltage and the on state voltage drop. To achieving good electrical characteristics, field stop IGBT (FS IGBT) is proposed. In this paper, 1,200 V planar gate non punch-through IGBT (planar gate NPT IGBT), planar gate FS IGBT and trench gate FS IGBT is designed and optimized. The simulation results are compared with each three structures. In results, we optain optimal design parameters and confirm excellence of trench gate FS IGBT. Experimental result by using medici, shows 40% improvement of on state voltage drop.

600 V급 Planar Field Stop IGBT 최적 설계 및 전기적 특성 분석에 관한 연구

IGBT(insulated gate bipolar transistor) is outstanding device for current conduction capabilities. IGBT design to control the large power switching device for power supply, converter, solar converter, electric home appliances, etc. like this IGBT device can be used in many places so to increase the efficiency of the various structures are coming. in this paper optimization design of planar type IGBT and planar field stop IGBT, and both devices have a comparative analysis and reflection of the electrical characteristics.

Development of Monte Carlo Modeling for Neutron-Induced Failures of Trench FieldStop IGBT

Based on experimental results under neutron beam and on analysis using Monte Carlo simulation, we show that the sensitivity to SEB/SEL of Trench Gate Fieldstop IGBT can be modeled by an RPP assumption. The minimum critical charge for triggering a destructive single event on a Trench Gate Fieldstop IGBT is found to be about 90 fC.

On the reliability assessment of trench fieldstop IGBT under atmospheric neutron spectrum

In the early 1990s, active power devices have been shown to be susceptible to radiation-induced failures. Many studies have been focused on cosmic ray-induced power device failures, including even IGBT failures. Till the end of the 1990s, IGBT technologies were susceptible to static or dynamic latch-up, which are respectively occurring in their forward conduction or switching mode. From then on, new technologies, such as trench gate fieldstop IGBTs providing significant improvement in the latching current capability, have been developed. But so far, the impact of atmospheric radiation has not been assessed on actual technologies. With the expected increase of embedded IGBTs in avionics and automotive applications, the impact of neutrons on the functional security of embedded systems has to be quantified.

A novel TFS-IGBT with a super junction floating layer

A novel trench field stop (TFS) IGBT with a super junction (SJ) floating layer (SJ TFS-IGBT) is proposed. This IGBT presents a high blocking voltage (> 1200 V), low on-state voltage drop and fast turn-off capability. A SJ floating layer with a high doping concentration introduces a new electric field peak at the anode side and optimizes carrier distribution, which will improve the breakdown voltage in the off-state and decrease the energy loss in the on-state/switching state for the SJ TFS-IGBT. A low on-state voltage (VF) and a high breakdown voltage (BV) can be achieved by increasing the thickness of the SJ floating layer under the condition of exact charge balance. A low turn-off loss can be achieved by decreasing the concentration of the P-anode. Simulation results show that the BV is enhanced by 100 V, VF is decreased by 0.33 V(at 100 A/cm2) and the turn-off time is shortened by 60%, compared with conventional TFS-IGBTs.

A simulation study on novel field stop IGBTs using superjunction

Performing device simulation, a novel insulated gate bipolar transistor (IGBT) that employs the superjunction as well as field stop (FS), has been investigated. For a planar 1200-V IGBT, the novel superjunction FS IGBT demonstrates the remarkable device performance such as the ON-state voltage drop of 1.6 V and switching-off energy of 20 /spl mu/J/A at the collector current density of 100 A/cm/sup 2/, which is considered as the best tradeoff performance in its class. In addition, the impact of various design parameters on device performance has been explored, and a comprehensive analysis for understanding of the operating mechanism is presented, which will be of help for realizing the SJFS IGBTs with optimum design.

Short-Circuit Destruction of Field-Stop-Structure Inslated Gate Bipolar Transistor

Numerical and experimental results of the field stop (FS) and lifetime control (LC) IGBT short-circuit characteristics using 4500 V-class devices are described. During the short-circuit condition, avalanche breakdown occurs along the base/FS layer interface. This is because the strength of the electric field becomes high due to the increase in the majority carrier concentration, which is larger than the impurity concentration in the base layer. The lower current gain in the device results in a higher electric field. It can be concluded that FS-IGBT has a narrower short circuit safety operating area (SCSOA) than other devices. Particularly, this phenomenon is easy to show on the high-voltage-class device, such as a 4.5 kV IGBT, because its impurity concentration in the base layer is low.

Characterization and modeling of high-voltage field-stop igbts

The high-voltage field-stop (FS) insulated gate bipolar transistor (IGBT) is a promising power device for high-power applications thanks to the robust characteristics offered by the FS technology, which combines the inherent advantages offered by punch-through and nonpunch-through structures while overcoming the drawbacks of each structure. In this paper, an electrothermal physics-based model for the FS IGBT is developed. The model contains a detailed description of the FS layer and it is validated using experimental results for a commercial 1200-V/60-A FS IGBT over the entire temperature range specified in the data sheets. The validated model is then used to simulate a 6.5-kV FS IGBT. The simulation results are compared with experimental results published in the literature and good agreement is obtained.

A study on the short-circuit capability of field-stop igbts

The short-circuit failure mechanism of 1200 V trench gate field-stop insulated gate bipolar transistor (IGBT) has been investigated in this paper. Experimental testing shows that most of the devices failed during the blocking state after a few hundred microseconds of the short-circuit turn-off condition. This unusual failure mode was analyzed both with experimental and numerical investigation. It has been determined that due to significantly large leakage current, thermal run-away can occur causing device failure after short circuit turn-off. Due to the smaller heat capacity of the FS-IGBT structure, the device temperature after the turn-off becomes so high that the local heating produced by the high temperature leakage current results in the thermal run-away.